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    SENSING DEVICE, IN PARTICULAR LOAD SENSING DEVICE
    3.
    发明公开
    SENSING DEVICE, IN PARTICULAR LOAD SENSING DEVICE 审中-公开

    公开(公告)号：EP3534126A2

    公开(公告)日：2019-09-04

    申请号：EP19157021.7

    申请日：2019-02-13

    Applicant: STMicroelectronics S.r.l.

    Inventor： ABBASI GAVARTI, Mohammad ,  CALTABIANO, Daniele ,  GHIDONI, Marco Omar

    IPC: G01L1/18 ,  H01L29/84

    Abstract: A load sensor package (140) includes a housing having a cap (142), a column (144), a peripheral structure (146), and a base (148). The base (148) includes a major surface configured to mount a stress sensor (120), while the cap (142) includes a cap major surface configured to receive a load to be measured. The column (144) is configured to transfer a predetermined fraction of the load to be measured to the base through the stress sensor (120). The peripheral structure (146) is configured to transfer the remaining fraction of the load to be measured to the base.

    TRENCH-BASED MICROELECTROMECHANICAL TRANSDUCER AND METHOD FOR MANUFACTURING THEREOF
    6.
    发明公开
    TRENCH-BASED MICROELECTROMECHANICAL TRANSDUCER AND METHOD FOR MANUFACTURING THEREOF 有权

    公开(公告)号：EP3396344A1

    公开(公告)日：2018-10-31

    申请号：EP18163456.9

    申请日：2018-03-22

    Applicant: STMicroelectronics S.r.l.

    Inventor： ABBASI GAVARTI, Mohammad ,  CALTABIANO, Daniele ,  POMARICO, Anna Angela ,  ROSELLI, Giuditta

    IPC: G01L9/00

    Abstract: A microelectromechanical transducer (1; 20; 30; 50), comprising: a semiconductor body (2), having a first surface (2a) and a second surface (2b) opposite to one another; a first structural body (8), coupled to the first surface (2a) of the semiconductor body (2); a first sealed cavity (10) between the semiconductor body (2) and the first structural body (8); and an active area (7) housed in the first sealed cavity (10), including at least two trenches (4; 34) and a sensor element (6a-6d; 60) between the trenches (4; 34). The trenches (4; 34) extend along a vertical direction (Z) from the first surface (2a) towards the second surface (2b) of the semiconductor body (2).

    MINIATURIZED LOAD SENSOR DEVICE HAVING LOW SENSITIVITY TO THERMO-MECHANICAL PACKAGING STRESS, IN PARTICULAR FORCE AND PRESSURE SENSOR
    7.
    发明公开
    MINIATURIZED LOAD SENSOR DEVICE HAVING LOW SENSITIVITY TO THERMO-MECHANICAL PACKAGING STRESS, IN PARTICULAR FORCE AND PRESSURE SENSOR 审中-公开
    小型化的负载传感器装置对热机械包装应力，特别是力和压力传感器具有低灵敏度

    公开(公告)号：EP3252449A1

    公开(公告)日：2017-12-06

    申请号：EP16206884.5

    申请日：2016-12-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： CALTABIANO, Daniele ,  ABBASI GAVARTI, Mohammad ,  MURARI, Bruno ,  BRIOSCHI, Roberto ,  GIUSTI, Domenico

    IPC: G01L9/00 ,  G01L1/04

    Abstract: A load-sensing device (10), arranged in a package (12) forming a chamber (24). The package (12) has a deformable substrate (21) configured, in use, to be deformed by an external force. A sensor unit (11) is in direct contact with the deformable substrate (21) and is configured to detect deformations of the deformable substrate. An elastic element (15) is arranged within of the chamber (24) and acts between the package (12) and the sensor unit (11) to generate, on the sensor unit, a force keeping the sensor unit in contact with the deformable substrate. For example, the deformable substrate is a base (21) of the package (12), and the elastic element is a metal lamina (15) arranged between the lid (22) of the package (12) and the sensor unit (11). The sensor unit (11) may be a semiconductor die integrating piezoresistors.

    Abstract translation: 负载感测装置（10），其布置在形成腔室（24）的包装（12）中。 包装（12）具有可变形的基底（21），该基底在使用中被配置为通过外力而变形。 传感器单元（11）与可变形基板（21）直接接触并且被配置为检测可变形基板的变形。 弹性元件（15）布置在腔室（24）内并且作用在封装（12）和传感器单元（11）之间，以在传感器单元上​​产生保持传感器单元与可变形基底 。 例如，可变形衬底是封装（12）的基座（21），并且弹性元件是布置在封装（12）的盖（22）和传感器单元（11）之间的金属薄片（15） 。 传感器单元（11）可以是集成压敏电阻器的半导体管芯。

    SENSING DEVICE, IN PARTICULAR LOAD SENSING DEVICE
    9.
    发明公开
    SENSING DEVICE, IN PARTICULAR LOAD SENSING DEVICE 审中-公开

    公开(公告)号：EP3534126A3

    公开(公告)日：2019-11-13

    申请号：EP19157021.7

    申请日：2019-02-13

    Applicant: STMicroelectronics S.r.l.

    Inventor： ABBASI GAVARTI, Mohammad ,  CALTABIANO, Daniele ,  GHIDONI, Marco Omar

    IPC: G01L1/18 ,  H01L29/84

    Abstract: A load sensor package (140) includes a housing having a cap (142), a column (144), a peripheral structure (146), and a base (148). The base (148) includes a major surface configured to mount a stress sensor (120), while the cap (142) includes a cap major surface configured to receive a load to be measured. The column (144) is configured to transfer a predetermined fraction of the load to be measured to the base through the stress sensor (120). The peripheral structure (146) is configured to transfer the remaining fraction of the load to be measured to the base.

    MULTI-AXIAL FORCE SENSOR, METHOD OF MANUFACTURING THE MULTI-AXIAL FORCE SENSOR, AND METHOD FOR OPERATING THE MULTI-AXIAL FORCE SENSOR
    10.
    发明公开
    MULTI-AXIAL FORCE SENSOR, METHOD OF MANUFACTURING THE MULTI-AXIAL FORCE SENSOR, AND METHOD FOR OPERATING THE MULTI-AXIAL FORCE SENSOR 审中-公开

    公开(公告)号：EP3421959A1

    公开(公告)日：2019-01-02

    申请号：EP18178963.7

    申请日：2018-06-21

    Applicant: STMicroelectronics S.r.l.

    Inventor： ABBASI GAVARTI, Mohammad ,  CALTABIANO, Daniele ,  BRAGHIN, Francesco

    IPC: G01L5/16 ,  G01L1/26 ,  G01L1/18 ,  G01L1/22

    Abstract: A microelectromechanical transducer (1), comprising: a semiconductor body (2), having a first surface (2a) and a second surface (2b) opposite to one another; a plurality of trenches (4) extending in the semiconductor body (2) from the first surface (2a) towards the second surface (2b), including a first pair of trenches (4a) having a respective main direction of extension along a first axis (x), and a second pair of trenches (4b) having a respective main direction of extension along a second axis (y) orthogonal to the first axis; a first piezoresistive sensor (6a) and a second piezoresistive sensor (6b) extending at the first surface (2a) of the semiconductor body (2), respectively arranged between said first and second pair of trenches (4a, 4b), wherein the first piezoresistive sensor (6a), the second piezoresistive sensor (6b) and the plurality of trenches (4) form an active region (7a, 7b); and a first structural body (8), mechanically coupled to the first surface (2a) of the semiconductor body (2) in such a way to form a first sealed cavity (10) which encloses the active region.

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