Abstract:
A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.
Abstract:
A device (130) includes a sensor (200). The sensor includes a thermal infrared sensor or a sensor based on CMOS-SOI-MEMS technology, TMOS. The sensor is capable of performing at least two functions at the same time. The first is remote temperature measurement and the second is presence detection. The sensor passively collects infrared information and a microprocessor (210) coupled to the sensor (200) determines the temperature as well as presence.
Abstract:
A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.
Abstract:
A packaged sensor assembly includes: a packaging structure (2), having at least one opening (18); a humidity sensor (5) and a pressure sensor (10), which are housed inside the packaging structure (2) and communicate fluidically with the outside through the opening (18), and a control circuit (7), operatively coupled to the humidity sensor (5) and to the pressure sensor (10); wherein the humidity sensor (5) and the control circuit (7) are integrated in a first chip (3), and the pressure sensor (10) is integrated in a second chip (8) distinct from the first chip (3) and bonded to the first chip (3).
Abstract:
A device (130) includes a sensor (200). The sensor includes a thermal infrared sensor or a sensor based on CMOS-SOI-MEMS technology, TMOS. The sensor is capable of performing at least two functions at the same time. The first is remote temperature measurement and the second is presence detection. The sensor passively collects infrared information and a microprocessor (210) coupled to the sensor (200) determines the temperature as well as presence.
Abstract:
A thermographic sensor (105) is proposed. The thermographic sensor (105) comprises one or more thermo-couples (305), each for providing a sensing voltage depending on a difference between a temperature of a hot joint (H) and a temperature of a cold joint (P-N) of the thermo-couple (305); the thermographic sensor (105) further comprises one or more sensing transistors (310), each driven according to the sensing voltages of one or more corresponding thermo-couples (305) for providing a sensing electrical signal depending on its temperature and on the corresponding sensing voltages. A thermographic device (100) comprising the thermographic sensor (105) and a corresponding signal processing circuit (110), and a system (700) comprising one or more thermographic devices (100) are also proposed.