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    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    1.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：EP3913681A3

    公开(公告)日：2022-03-16

    申请号：EP21174210.1

    申请日：2021-05-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

    IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

    Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    3.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：EP3913681A2

    公开(公告)日：2021-11-24

    申请号：EP21174210.1

    申请日：2021-05-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

    IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

    Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    MEMS THERMOELECTRIC GENERATOR, MANUFACTURING PROCESS OF THE GENERATOR AND HEATING SYSTEM COMPRISING THE GENERATOR
    4.
    发明公开
    MEMS THERMOELECTRIC GENERATOR, MANUFACTURING PROCESS OF THE GENERATOR AND HEATING SYSTEM COMPRISING THE GENERATOR 审中-公开

    公开(公告)号：EP4284148A1

    公开(公告)日：2023-11-29

    申请号：EP23172050.9

    申请日：2023-05-08

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  DEL SARTO, Marco

    IPC: H10N10/13 ,  H10N10/17 ,  H10N19/00

    Abstract: MEMS thermoelectric generator (10) comprising: a thermoelectric cell (100) including one or more thermoelectric elements (110) partially extending on a cavity of the thermoelectric cell (100); a total thermoplastic layer (20; 20, 48) extending on the thermoelectric cell (100) and having a top surface (20a; 52a) and a bottom surface (20b) opposite to each other along a first axis (Z), the bottom surface (20b) facing the thermoelectric cell (100) and the total thermoplastic layer (20; 20, 48) being of thermally insulating material and configured to be processed through laser direct structuring, LDS, technique; a heat sink (14) configured to exchange heat with the thermoelectric cell (100) interposed, along the first axis (Z), between the heat sink (14) and the total thermoplastic layer (20; 20, 48); and a thermal via (30; 30, 50) of metal material, extending through the total thermoplastic layer (20; 20, 48) from the top surface (20a; 52a) to the bottom surface (20b) so that it is superimposed, along the first axis (Z), on the cavity (115), wherein the thermoelectric cell (100) may exchange heat with a thermal source (12) through the thermal via (30; 30, 50).

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