Abstract:
A semiconductor device includes: a substrate (2); a transduction microstructure (3) integrated in the substrate (2); a cap (5) joined to the substrate (2) and having a first face (5a) adjacent to the substrate (2) and a second, outer, face (5b); and a channel (15) extending through the cap (5) from the second face (5b) to the first face (5a) and communicating with the transduction microstructure (3). A protective membrane (17) made of porous polycrystalline silicon permeable to aeriform substances is set across the channel (15).
Abstract:
A pressure sensor (1) has a body (5) having a first chamber (12) and a second chamber (13) hermetically separated from the first chamber; a first detection structure (18) which is arranged in the first chamber (12), has a first deformable element (25) and a first buried cavity (24) within the first detection structure, wherein the first deformable element is configured to undergo a deformation as a function of a pressure difference between the first chamber and the first buried cavity. The sensor also has a second detection structure (19) which is arranged in the second chamber (13), has a second deformable element (32) and a second buried cavity (30) within the second detection structure, wherein the second deformable element is configured to undergo a deformation as a function of a pressure difference between the second chamber and the second buried cavity. The sensor also has a first channel (40) that extends into the body (5) and is configured to fluidically couple the first buried cavity (24) with the second chamber (13); and a second channel (41) that extends into the body (5) and is configured to fluidically couple the second buried cavity (30) to the first chamber (12).
Abstract:
A microelectromechanical pressure sensor (1) provided with: a monolithic body (2) of semiconductor material having a front surface (2a); and a sensing structure (4) integrated in the monolithic body (2) and having a buried cavity (5), completely contained within the monolithic body (2), at the front surface (2a); a sensing membrane (6), suspended above the buried cavity (5) and formed by a surface portion (2') of the monolithic body (2); and sensing elements (8), of a piezoresistive type, arranged in the sensing membrane (5) and designed to detect a deformation of the sensing membrane (5) as a result of a pressure. The pressure sensor (1) is further provided with a self-test structure (12), integrated within the monolithic body (2), wherein the sensing structure (4) is integrated, such as to cause application of a testing deformation of the sensing membrane (6) in order to verify proper operation of the sensing structure (4).
Abstract:
A process for manufacturing a MEMS micromirror device from a monolithic body (104) of semiconductor material. Initially, a buried cavity (106) is formed in the monolithic body and delimits at the bottom a suspended membrane (105) arranged between the buried cavity (106) and a main surface (104A) of the monolithic body (104). Then, the suspended membrane (105) is defined to form a supporting frame (115) and a mobile mass (114) rotatable about an axis (C) and carried by the supporting frame (115). The mobile mass forms an oscillating mass (107), supporting arms (109), spring portions (111), and mobile electrodes (112) combfingered to fixed electrodes (113). A reflecting region (145) is formed on top of the oscillating mass (107).
Abstract:
A button device (6) includes a MEMS sensor (30), having a MEMS strain detection structure (42) and a deformable substrate (37) configured to undergo deformation under the action of an external force (F). In particular, the MEMS strain detection structure (42) includes a mobile element (62) carried by the deformable substrate (37) via at least a first and a second anchorage (67, 69), the latter fixed with respect to the deformable substrate (37) and are configured to displace and generate a deformation force (F t ) on the mobile element (62) in the presence of the external force (F); and stator elements (70, 72) capacitively coupled to the mobile element (62). The deformation of the mobile element (62) causes a capacitance variation (ΔC) between the mobile element (62) and the stator elements (70, 72). Furthermore, the MEMS sensor (30) is configured to generate detection signals (s C1 , S C2 ; S MEMS , s ref ) correlated to the capacitance variation (ΔC).
Abstract:
Microelectromechanical transducer (1; 11) comprising a semiconductor body (2), four cavities (4a-4d) buried within the semiconductor body (2) and four membranes (5a-5d), each membrane (5a-5d) being suspended over a respective cavity (4a-4d) and being capable of being deflected by the action of a pressure external to the microelectromechanical transducer (1; 11); the microelectromechanical transducer (1; 11) further comprising four transducer elements (6a-6d; 16a-16d) housed by a respective membrane (5a-5d) and electrically coupled to one another in a Wheatstone bridge configuration to convert said external pressure into an electrical signal.
Abstract:
Described herein is an integrated device (1), having: a first die (2); a second die (6) coupled in a stacked way on the first die (2) along a vertical axis (z); a coupling region (16) arranged between facing surfaces (2a, 6a) of the first die (2) and of the second die (6), which face one another along the vertical axis (z) and lie in a horizontal plane (xy) orthogonal to the vertical axis (z), for mechanical coupling of the first and second dies; electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, aligned in pairs along the vertical axis (z); and conductive regions (18) arranged between the pairs of electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, for their electrical coupling. Supporting elements (20) are arranged at the facing surface (2a; 6a) of at least one between the first and second dies and elastically support respective electrical-contact elements.
Abstract:
Method of manufacturing a transducer module (10), comprising the steps of: forming, on a substrate (1), a first MEMS transducer (20), in particular a gyroscope, and a second MEMS transducer (30), in particular an accelerometer, having a suspended membrane (4a); forming, on the substrate (1), a conductive layer (4) and defining the conductive layer (4) in order to provide, simultaneously, at least one conductive strip (4c; 4d) electrically coupled to the first MEMS transducer (20) and the membrane (4a) of the second MEMS transducer (30).
Abstract:
A micro-electro-mechanical pressure sensor device (100), formed by a cap region (102) and by a sensor region (101) of semiconductor material. An air gap (107) extends between the sensor region (101) and the cap region (102; 103); a buried cavity (109) extends underneath the air gap, in the sensor region (101), and delimits a membrane (111) at the bottom. A through trench (110) extends within the sensor region (101) and laterally delimits a sensitive portion (121) housing the membrane, a supporting portion (120), and a spring portion (122), the spring portion connecting the sensitive portion (121) to the supporting portion (120). A channel (123) extends within the spring portion (122) and connects the buried cavity (109) to a face (101A) of the second region (101). The first air gap (107) is fluidically connected to the outside of the device, and the buried cavity (109) is isolated from the outside via a sealing region (106B) arranged between the sensor region (101) and the cap region (102).
Abstract:
An integrated electronic system (1) is provided with a package (2) formed by a support base (4) and a coating region (5) arranged on the support base (4) and having at least a first system die (6), including semiconductor material, coupled to the support base (4) and arranged in the coating region (5). The integrated electronic system also has, within the package (2), a monitoring system (14) configured to determine the onset of defects within the coating region (5), through the emission of acoustic detection waves and the acquisition of corresponding received acoustic waves, whose characteristics are affected by, and therefore are indicative of, the aforementioned defects.