MEMS ACTUATOR AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:EP4148016A1

    公开(公告)日:2023-03-15

    申请号:EP22192423.6

    申请日:2022-08-26

    Abstract: MEMS actuator (10) comprising: a semiconductor body (12) with a first surface (12a), defining a housing cavity (22) facing the first surface (12a) and having a bottom surface (22a), the semiconductor body (12) further defining a fluidic channel (25) in the semiconductor body (12) with a first end (25') across the bottom surface (22a); and a strainable structure (20) which extends into the housing cavity (22), is coupled to the semiconductor body (12) at the bottom surface (22a), and defines an internal space (24) facing the first end (25') of the fluidic channel (25) and comprising at least a first and a second internal subspace (26', 26") connected to each other and to the fluidic channel (25). When a fluid is pumped through the fluidic channel (25) into the internal space (24), the first and second internal subspaces (26', 26") expand straining the strainable structure (20) along the first axis (Z) and generating an actuation force (F att ) exerted by the strainable structure (20) along the first axis (Z), in the opposite direction with respect to the housing cavity (22).

    PIEZOELECTRIC TRANSDUCER AND METHOD OF MANUFACTURING THEREOF

    公开(公告)号:EP3742506A1

    公开(公告)日:2020-11-25

    申请号:EP20176147.5

    申请日:2020-05-22

    Abstract: A method for manufacturing a piezoelectric transducer (100) is disclosed, which comprises forming a bottom electrode (34, 40) on a semiconductor body (32), forming a piezoelectric element (36) on the bottom electrode, forming a protective layer (42) having a first opening (44) through which a portion of the piezoelectric element is exposed and a second opening (45) through which a portion of the bottom electrode is exposed, forming a conductive layer on the protective layer and within the first and second openings, and patterning the conductive layer to contextually form a top electrode (48) in electrical contact with the piezoelectric element at the first opening, a first biasing stripe (51) in electrical contact with the top electrode, and a second biasing stripe (52) in electrical contact with the bottom electrode at the second opening. A passivation layer (56) and metal contacts (61, 62) may be formed thereafter.

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