公开(公告)号：EP3263517A1

公开(公告)日：2018-01-03

申请号：EP16206887.8

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： ALLEGATO, Giorgio ,  OGGIONI, Laura ,  GARAVAGLIA, Matteo ,  SOMASCHINI, Roberto

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81B3/0097 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/042 ,  B81B2203/0315 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/037

Abstract: A microelectromechanical device having a first substrate (330) of semiconductor material and a second substrate (340) of semiconductor material having a bonding recess (331) delimited by projecting portions (334), monolithic therewith. The bonding recess forms a closed cavity (324) with the first substrate. A bonding structure (336) is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure (345) is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

Abstract translation: 一种具有半导体材料的第一衬底（330）和半导体材料的第二衬底（340）的微机电装置，该半导体材料具有由与其整体形成的突出部分（334）限定的键合凹槽（331）。 结合凹部与第一衬底形成封闭空腔（324）。 接合结构（336）布置在封闭的空腔内并且接合到第一和第二基板。 微电子机械结构（345）形成在第一和第二衬底之间选择的衬底中。 该器件通过在第一晶片中形成键合凹槽来制造; 将结合物质沉积在结合凹部中，结合物质具有比结合凹部更大的深度; 并粘合两个晶片。