公开(公告)号：EP4361091A1

公开(公告)日：2024-05-01

申请号：EP23203161.7

申请日：2023-10-12

Applicant: STMicroelectronics S.r.l.

Inventor： SHAW, Mark Andrew ,  CORSO, Lorenzo ,  GARAVAGLIA, Matteo ,  ALLEGATO, Giorgio

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B2207/0720130101 ,  B81C2203/015420130101 ,  B81C2203/079220130101

Abstract: Device formed by a first die (210) and a second die (221). The first die is of semiconductor and integrates electronic components (202). The second die has a main surface (210A), forms patterned structures (230) and is bonded to the first die. Internal electrical coupling structures (242) electrically couple the main surface (210A) of the first die (210) to the second die (221). External connection regions (241) extend on the main surface of the first die (210). A package (246) embeds the first die (210), the second die (221) and the internal electrical coupling structures (242) and partially surrounds the external connection regions (241), the external connection regions partially protruding from the package. The second die (221) has through recesses (207, 208) accommodating external connection regions

公开(公告)号：EP4324785A1

公开(公告)日：2024-02-21

申请号：EP23183560.4

申请日：2023-07-05

Applicant: STMicroelectronics S.r.l.

Inventor： ALLEGATO, Giorgio ,  NICOLI, Silvia ,  ALESSANDRI, Anna ,  GARAVAGLIA, Matteo

IPC: B81B7/00 ,  H01L23/552

Abstract: Electronic device including: a MEMS sensor device (20; 120) including a functional structure (45;144,145) which transduces a chemical or physical quantity into a corresponding electrical quantity; a cap (21) including a semiconductive substrate (2); and a bonding dielectric region (19), which mechanically couples the cap (21) to the MEMS sensor device (20;120). The cap (21) further includes a conductive region (10;110), which extends between the semiconductive substrate (2) and the MEMS sensor device (20;120) and includes: a first portion (12;112), which is arranged laterally with respect to the semiconductive substrate (2) and is exposed, so as to be electrically coupleable to a terminal at a reference potential (69,77) by a corresponding wire bonding (58); and a second portion (13;113), which contacts the semiconductive substrate (2).

公开(公告)号：EP3263517A1

公开(公告)日：2018-01-03

申请号：EP16206887.8

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： ALLEGATO, Giorgio ,  OGGIONI, Laura ,  GARAVAGLIA, Matteo ,  SOMASCHINI, Roberto

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81B3/0097 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/042 ,  B81B2203/0315 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/037

Abstract: A microelectromechanical device having a first substrate (330) of semiconductor material and a second substrate (340) of semiconductor material having a bonding recess (331) delimited by projecting portions (334), monolithic therewith. The bonding recess forms a closed cavity (324) with the first substrate. A bonding structure (336) is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure (345) is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

Abstract translation: 一种具有半导体材料的第一衬底（330）和半导体材料的第二衬底（340）的微机电装置，该半导体材料具有由与其整体形成的突出部分（334）限定的键合凹槽（331）。 结合凹部与第一衬底形成封闭空腔（324）。 接合结构（336）布置在封闭的空腔内并且接合到第一和第二基板。 微电子机械结构（345）形成在第一和第二衬底之间选择的衬底中。 该器件通过在第一晶片中形成键合凹槽来制造; 将结合物质沉积在结合凹部中，结合物质具有比结合凹部更大的深度; 并粘合两个晶片。