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    Phase change memory cell with tubular heater and manufacturing method thereof
    1.
    发明公开
    Phase change memory cell with tubular heater and manufacturing method thereof 有权
    Phasenwechselspeicher mitrohrförmigerHeizstruktur sowie deren Herstellungsverfahren

    公开(公告)号：EP1710807A1

    公开(公告)日：2006-10-11

    申请号：EP05102811.6

    申请日：2005-04-08

    Applicant: STMicroelectronics S.r.l.

    Inventor： Pellizzer, Fabio ,  Varesi, Enrico ,  Pirovano, Agostino

    IPC: G11C16/02 ,  H01L45/00

    CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    Abstract: A phase change memory cell includes a phase change region of a phase change material, a heating element (30) of a resistive material, arranged in contact with the phase change region (33') and a memory element (35) formed in said phase change region at a contact area with the heating element (30). The contact area is in the form of a frame that has a width of sublithographic extent (S) and, preferably, a sublithographic maximum external dimension. The heating element (30) includes a hollow elongated portion which is arranged in contact with the phase change region (33').

    Abstract translation: 相变存储单元包括相变材料的相变区域，与相变区域（33'）接触地布置的电阻材料的加热元件（30）和形成在所述相位中的存储元件（35） 在与加热元件（30）的接触区域处的变化区域。 接触区域为具有亚光刻范围（S）的宽度的框架的形式，并且优选为亚光刻最大外部尺寸。 加热元件（30）包括与相变区域（33'）接触地布置的中空细长部分。

    Self-aligned process for manufacturing phase change memory cells
    3.
    发明公开
    Self-aligned process for manufacturing phase change memory cells 有权
    Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen

    公开(公告)号：EP1729355A1

    公开(公告)日：2006-12-06

    申请号：EP05104879.1

    申请日：2005-06-03

    Applicant: STMicroelectronics S.r.l.

    Inventor： Pellizzer, Fabio ,  Bez, Roberto ,  Varesi, Enrico ,  Pirovano, Agostino ,  Petruzza, Pietro

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/06 ,  H01L27/2445 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

    Abstract: A process for manufacturing phase change memory cells includes the step of forming a heater element (25a) in a semiconductor wafer (10) and a storage region (31a) of a phase change material on and in contact with the heater element (25a). In order to form the heater element (25a) and the phase change storage region (31a) a heater structure is first formed and a phase change layer (31) is deposited on and in contact with the heater structure. Then, the phase change layer (31) and the heater structure are defined by subsequent self-aligned etch steps.

    Abstract translation: 用于制造相变存储单元的方法包括在半导体晶片（10）中形成加热元件（25a）和在与加热器元件（25a）接触并与之接触的相变材料的存储区域（31a）的步骤。 为了形成加热器元件（25a）和相变储存区域（31a），首先形成加热器结构，并且相变层（31）沉积在加热器结构上并与加热器结构接触。 然后，通过随后的自对准蚀刻步骤限定相变层（31）和加热器结构。

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