公开(公告)号：EP1309976A4

公开(公告)日：2007-08-15

申请号：EP01933244

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： BIEGELSEN DAVID K ,  CHUA CHRISTOPHER L ,  FORK DAVID K

IPC: H01F17/00 ,  H01F17/02 ,  H01F17/04 ,  H01F17/06 ,  H01F41/04 ,  H01L21/822 ,  H01L27/04 ,  H01R12/00 ,  H05K3/40 ,  H01F5/00

CPC classification number: H01F17/0006 ,  H01F17/0033 ,  H01F41/041 ,  H01F2027/2814 ,  H01G5/18 ,  H01G5/38 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/11 ,  H01L2224/48091 ,  H01L2924/014 ,  H01L2924/19042 ,  H05K3/4092 ,  H01L2924/00014

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61a-65a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. Alternately, the loop winding can be formed of two elastic members (318, 320) in which the free ends are joined in mid-air. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：EP1301827A4

公开(公告)日：2003-07-09

申请号：EP01935209

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  VAN SCHUYLENBERGH KOENRAAD F ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02 ,  G03C5/56 ,  G03C5/58 ,  G03F7/00 ,  H01L21/027 ,  H01L33/00

CPC classification number: H01L24/13 ,  G01R1/06727 ,  G01R3/00 ,  H01F17/0033 ,  H01F17/02 ,  H01F41/041 ,  H01L21/76838 ,  H01L21/7688 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/5227 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/4847 ,  H01L2224/8592 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4921 ,  Y10T29/49218 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.

Abstract translation: 可用于片上集成高Q电感器和变压器的面外微结构将磁场方向置于平行于衬底（14）平面的位置，而不需要高纵横比处理。 光刻构图的线圈结构包括具有固有应力分布的弹性构件（61a）。 本征应力分布使自由部分（11）远离形成环形绕组（142）的衬底（14）。 锚定部分（12）保持固定到基底（14）。 自由部分端变成可以通过焊接或电镀连接到基板（14）的第二固定部分（61c）。 一系列单独的线圈结构（140）可以通过它们的锚固部分连接以形成电感器和变压器。

公开(公告)号：DE102010063821B4

公开(公告)日：2019-01-31

申请号：DE102010063821

申请日：2010-12-22

Applicant: XEROX CORP

Inventor： BIEGELSEN DAVID K ,  BUHLER STEVEN A ,  ELROD SCOTT A ,  FITCH JOHN S ,  FORK DAVID K ,  HADIMIOGLU BABUR B ,  STEARNS RICHARD G

IPC: B81B1/00 ,  B81C1/00

Abstract: Planar hergestellte Struktur (201, 401, 501, 601) zur Verwendung in einem zugehörigen Markierungsgerät, das aus mehreren Markierungsgerätearten zur Erzeugung von Markierungen auf einem zugehörigen Substrat ausgewählt ist, wobei die hergestellte Struktur umfasst:ein Substrat (206),einen selbsthebenden Federfinger (200) mit einem nicht angehobenen Ankerbereich (208), der an dem Substrat angebracht ist, und einem Auslösebereich (202), der sich über dem Substrat (206) erstreckt, wobei der Auslösebereich (202) ein zum Rand des nicht angehobenen Ankerbereichs (208) zugewandtes Ende (212) und ein abgewandtes Ende aufweist, wobei das abgewandte Ende eine Spitze (202T) umfasst, die ausgebildet ist, als ein elektrostatischer Feldkonzentrator zu dienen, um die elektrostatische Extraktion von Markierungsfluiden aus einem Reservoir mit Markierungsfluiden des zugehörigen Markierungsgeräts in Richtung einer zu markierenden Oberfläche zu ermöglichen.

公开(公告)号：DE60132865T2

公开(公告)日：2009-03-05

申请号：DE60132865

申请日：2001-09-07

Applicant: XEROX CORP

Inventor： PEETERS ERIC ,  ROSA MICHEL A ,  FORK DAVID K

IPC: G02B26/08 ,  B81B3/00 ,  B81B7/00 ,  G02B6/35

公开(公告)号：AT336738T

公开(公告)日：2006-09-15

申请号：AT01935209

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  VAN SCHUYLENBERGH KOENRAAD F ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02 ,  G03C5/56 ,  G03C5/58 ,  H01L33/00 ,  H01L21/027 ,  G03F7/00

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：DE60118126D1

公开(公告)日：2006-05-11

申请号：DE60118126

申请日：2001-09-07

Applicant: XEROX CORP

Inventor： ROSA MICHEL A ,  PEETERS ERIC ,  FORK DAVID K

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B6/35

公开(公告)号：AU6132201A

公开(公告)日：2001-11-26

申请号：AU6132201

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  SCHUYLENBERGH KOENRAAD F VAN ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02 ,  G03C5/56 ,  G03C5/58 ,  H01L33/00 ,  H01L21/027

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：CA2107174A1

公开(公告)日：1994-06-03

申请号：CA2107174

申请日：1993-09-28

Applicant: XEROX CORP

Inventor： FORK DAVID K

IPC: C30B23/02 ,  G02B6/13 ,  H01L21/02 ,  H01L21/205 ,  H01L21/316 ,  H01L39/24 ,  H01L23/28 ,  C30B29/16 ,  C30B25/02

Abstract: An epitaxial (111) magnesium oxide (MgO) layer, suitable for use as a buffer layer (14), on a (111) surface of a tetrahedral semiconductor substrate (12), and method for its manufacture is described. The article may further include an epitaxial oxide overlayer (16) on the (111) MgO layer. The overlayer (16) may be a conducting, superconducting, and/or ferroelectric oxide layer. The method of producing the epitaxial (111) magnesium oxide (MgO) layer (14) on the (111) surface of a tetrahedral semiconductor substrate (12) proceeds at low temperature. The method may further include steps for forming the epitaxial oxide layer on the (111) MgO layer. The methods include the steps of preparing the (111) surface of a tetrahedral semiconductor substrate for deposition and the low temperature depositing of an MgO layer on the prepared surface. Further steps may include the depositing of the oxide layer over the MgO layer.

公开(公告)号：CA2083760A1

公开(公告)日：1993-05-27

申请号：CA2083760

申请日：1992-11-25

Applicant: XEROX CORP

Inventor： FORK DAVID K ,  NASHIMOTO KEIICHI

IPC: C30B25/18 ,  C30B29/22 ,  H01L21/36 ,  H01L39/02 ,  H01L39/24 ,  H01L21/31

Abstract: TITLE: Epitaxial Magnesium Oxide as a Buffer Layer for Formation of Subsequent Layers on Tetrahedral Semiconductors A structure includes a semiconducting substrate on which is formed an epitaxial buffer layer of MgO and an epitaxial layer of ferroelectric material or superconducting material or both. The semiconducting substrate is of the tetrahedral structure type, and may be an elemental or compound material. The MgO buffer layer on the tetrahedral semiconducting substrate allows epitaxial formation of the subsequent layers, facilitating the formation of a number of novel monolithic devices.

公开(公告)号：DE60116969T2

公开(公告)日：2006-07-27

申请号：DE60116969

申请日：2001-09-07

Applicant: XEROX CORP

Inventor： ROSA MICHEL A ,  FORK DAVID K ,  PEETERS ERIC

IPC: G02B26/08 ,  B81B3/00 ,  G02B6/35