3.
    发明专利
    未知

    公开(公告)号:DE60126389D1

    公开(公告)日:2007-03-22

    申请号:DE60126389

    申请日:2001-11-01

    Applicant: XEROX CORP

    Abstract: An optical cross switch including an improved system to align optical components is described. The system utilizes a highly transmissive sensor (170) positioned in the optical path of an optical signal to determine the precise position of the optical signal. A feedback loop uses output from the highly transmissive sensor (170) to readjust elements (128,136) that maintain the optical signal in a desired position. The current system is particularly suitable for use in an optical cross switch.

    7.
    发明专利
    未知

    公开(公告)号:DE60126389T2

    公开(公告)日:2007-08-23

    申请号:DE60126389

    申请日:2001-11-01

    Applicant: XEROX CORP

    Abstract: An optical cross switch including an improved system to align optical components is described. The system utilizes a highly transmissive sensor (170) positioned in the optical path of an optical signal to determine the precise position of the optical signal. A feedback loop uses output from the highly transmissive sensor (170) to readjust elements (128,136) that maintain the optical signal in a desired position. The current system is particularly suitable for use in an optical cross switch.

    10.
    发明专利
    未知

    公开(公告)号:DE60035665T2

    公开(公告)日:2008-05-21

    申请号:DE60035665

    申请日:2000-12-13

    Applicant: XEROX CORP

    Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts (46) and intrinsic amorphous silicon layers (50). One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon (48) to serve as a buffer between the metal back contact (46) and the intrinsic amorphous silicon layer (50). Another method of eliminating the Schottky junction completely replaces the metal back contact (46) and the N doped amorphous silicon layer (48) with a substitute material such as N doped poly-silicon (504, Figure 5).

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