公开(公告)号：DE60045913D1

公开(公告)日：2011-06-16

申请号：DE60045913

申请日：2000-12-19

Applicant: XEROX CORP

Inventor： LEMMI FRANCESCO ,  CHUA CHRISTOPHER L ,  MEI PING ,  LU JENG PING ,  FORK DAVID K ,  MCINTYRE HARRY J

IPC: B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  B81B3/00 ,  G06K15/12 ,  H01L25/075 ,  H01L25/16 ,  H01L31/101 ,  H01L31/105 ,  H01L33/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/40

公开(公告)号：EP1301827A4

公开(公告)日：2003-07-09

申请号：EP01935209

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  VAN SCHUYLENBERGH KOENRAAD F ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02 ,  G03C5/56 ,  G03C5/58 ,  G03F7/00 ,  H01L21/027 ,  H01L33/00

CPC classification number: H01L24/13 ,  G01R1/06727 ,  G01R3/00 ,  H01F17/0033 ,  H01F17/02 ,  H01F41/041 ,  H01L21/76838 ,  H01L21/7688 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/5227 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/4847 ,  H01L2224/8592 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4921 ,  Y10T29/49218 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.

Abstract translation: 可用于片上集成高Q电感器和变压器的面外微结构将磁场方向置于平行于衬底（14）平面的位置，而不需要高纵横比处理。 光刻构图的线圈结构包括具有固有应力分布的弹性构件（61a）。 本征应力分布使自由部分（11）远离形成环形绕组（142）的衬底（14）。 锚定部分（12）保持固定到基底（14）。 自由部分端变成可以通过焊接或电镀连接到基板（14）的第二固定部分（61c）。 一系列单独的线圈结构（140）可以通过它们的锚固部分连接以形成电感器和变压器。

公开(公告)号：AT336738T

公开(公告)日：2006-09-15

申请号：AT01935209

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  VAN SCHUYLENBERGH KOENRAAD F ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02 ,  G03C5/56 ,  G03C5/58 ,  H01L33/00 ,  H01L21/027 ,  G03F7/00

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：AU6132201A

公开(公告)日：2001-11-26

申请号：AU6132201

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  SCHUYLENBERGH KOENRAAD F VAN ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02 ,  G03C5/56 ,  G03C5/58 ,  H01L33/00 ,  H01L21/027

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：MY156922A

公开(公告)日：2016-04-15

申请号：MYPI20012305

申请日：2001-05-16

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  SCHUYLENBERGH KOENRAAD F VAN ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: H01F27/29 ,  H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02

Abstract: AN OUT-OF-PLANE MICRO-STRUCTURE WHICH CAN BE USED FOR ON-CHIP INTEGRATION OF HIGH-Q INDUCTORS AND TRANSFORMERS PLACES THE MAGNETIC FIELD DIRECTION PARALLEL TO THE SUBSTRATE PLANE WITHOUT REQUIRING HIGH ASPECT RATIO PROCESSING. THE PHOTOLITHOGRAPHICALLY PATTERNED COIL STRUCTURE INCLUDES AN ELASTIC MEMBER HAVING AN INTRINSIC STRESS PROFILE. THE INTRINSIC STRESS PROFILE BIASES A FREE PORTION AWAY FROM THE SUBSTRATE FORMING A LOOP WINDING (105). AN ANCHOR PORTION (101) REMAINS FIXED TO THE SUBSTRATE. THE FREE PORTION END BECOMES A SECOND ANCHOR PORTION (103) WHICH MAY BE CONNECTED TO THE SUBSTRATE VIA SOLDERING OR PLATING. A SERIES OF INDIVIDUAL COIL STRUCTURES CAN BE JOINED VIA THEIR ANCHOR PORTIONS TO FORM INDUCTORS AND TRANSFORMERS.

公开(公告)号：DE60122343T2

公开(公告)日：2006-12-14

申请号：DE60122343

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA L ,  LEMMI FRANCESCO ,  VAN SCHUYLENBERGH F ,  LU PING ,  FORK K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH L ,  ROMANO T

IPC: G03C5/56 ,  H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  G03C5/58 ,  G03F7/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/027 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01L33/00 ,  H01R9/03 ,  H05K7/02

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：DE60142714D1

公开(公告)日：2010-09-09

申请号：DE60142714

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA CHRISTOPHER L ,  LEMMI FRANCESCO ,  SCHUYLENBERGH KOENRAAD F ,  LU JENG PING ,  FORK DAVID K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH DONALD L ,  ROMANO LINDA T

IPC: G03C5/56 ,  H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  G03C5/58 ,  G03F7/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/027 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01L33/00 ,  H01R9/03 ,  H05K7/02

公开(公告)号：DE60035665T2

公开(公告)日：2008-05-21

申请号：DE60035665

申请日：2000-12-13

Applicant: XEROX CORP

Inventor： MEI PING ,  LEMMI FRANCESCO ,  LU JENG PING ,  STREET ROBERT A ,  BOYCE JAMES B

IPC: H01L27/146 ,  H01L31/18

Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts (46) and intrinsic amorphous silicon layers (50). One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon (48) to serve as a buffer between the metal back contact (46) and the intrinsic amorphous silicon layer (50). Another method of eliminating the Schottky junction completely replaces the metal back contact (46) and the N doped amorphous silicon layer (48) with a substitute material such as N doped poly-silicon (504, Figure 5).

公开(公告)号：DE60035665D1

公开(公告)日：2007-09-06

申请号：DE60035665

申请日：2000-12-13

Applicant: XEROX CORP

Inventor： MEI PING ,  LEMMI FRANCESCO ,  LU JENG PING ,  STREET ROBERT A ,  BOYCE JAMES B

IPC: H01L27/146 ,  H01L31/18

Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts (46) and intrinsic amorphous silicon layers (50). One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon (48) to serve as a buffer between the metal back contact (46) and the intrinsic amorphous silicon layer (50). Another method of eliminating the Schottky junction completely replaces the metal back contact (46) and the N doped amorphous silicon layer (48) with a substitute material such as N doped poly-silicon (504, Figure 5).

公开(公告)号：DE60122343D1

公开(公告)日：2006-09-28

申请号：DE60122343

申请日：2001-05-10

Applicant: XEROX CORP

Inventor： CHUA L ,  LEMMI FRANCESCO ,  VAN SCHUYLENBERGH F ,  LU PING ,  FORK K ,  PEETERS ERIC ,  SUN DECAI ,  SMITH L ,  ROMANO T

IPC: G03C5/56 ,  H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  G03C5/58 ,  G03F7/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/027 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01L33/00 ,  H01R9/03 ,  H05K7/02

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate (14) plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member (61 a) having an intrinsic stress profile. The intrinsic stress profile biases a free portion (11) away from the substrate (14) forming a loop winding (142). An anchor portion (12) remains fixed to the substrate (14). The free portion end becomes a second anchor portion (61 c) which may be connected to the substrate (14) via soldering or plating. A series of individual coil structures (140) can be joined via their anchor portions to form inductors and transformers.