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    Deposited thin film void-column network materials
    5.
    发明授权
    Deposited thin film void-column network materials 有权
    沉积的薄膜空心柱网络材料

    公开(公告)号：US06399177B1

    公开(公告)日：2002-06-04

    申请号：US09580105

    申请日：2000-05-30

    Applicant: Stephen J. Fonash ,  Ali Kaan Kalkan ,  Sanghoon Bae

    Inventor： Stephen J. Fonash ,  Ali Kaan Kalkan ,  Sanghoon Bae

    IPC: B32B700

    CPC classification number: B81C1/0038 ,  B81C1/00047 ,  B81C2201/0115 ,  B81C2201/0139 ,  B81C2201/018 ,  C23C16/24 ,  C23C16/511 ,  G01N21/17 ,  G01N27/121 ,  G01N27/44717 ,  G01N30/6095 ,  H01J49/0418 ,  Y10T428/24174 ,  Y10T428/249953

    Abstract: A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250° C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.

    Abstract translation: 公开了一种新颖的多孔膜，其包括在连续空隙中的硅柱网络，其可以在低温下（即小于约250℃）下使用高密度等离子体沉积来制造。该硅膜是二维纳米尺寸阵列 的棒状柱。 这种空隙柱形态可以用沉积条件控制，并且孔隙率可以变化高达90％。 在所采用的等离子体方法中同时使用低温沉积和蚀刻允许在同时获得柱状结构，连续空隙和多晶柱组成的独特机会。 可以使用这种多孔连续膜通过将该膜等离子体沉积在玻璃，金属箔，绝缘体或塑料基底上来制造独特的器件。

    Method for making microchannels on a substrate, and substrate including such microchannels
    6.
    发明申请
    Method for making microchannels on a substrate, and substrate including such microchannels 有权
    在基板上制造微通道的方法，以及包括这种微通道的基板

    公开(公告)号：US20120043649A1

    公开(公告)日：2012-02-23

    申请号：US13202951

    申请日：2010-02-24

    Applicant: Abdennour Abbas ,  Didier Guillochon ,  Bertrand Bocquet ,  Philippe Supiot

    Inventor： Abdennour Abbas ,  Didier Guillochon ,  Bertrand Bocquet ,  Philippe Supiot

    IPC: H01L21/02 ,  H01L29/02

    CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0108 ,  B81C2201/018

    Abstract: The present invention relates to a process for fabricating microchannels on a substrate and to a substrate comprising these microchannels, the invention being especially applicable to the fabrication of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems.The process includes a step (a) of producing at least one or at least two patterns 2 on the surface of a bottom layer 1 and a step (b) of depositing, on top of the bottom layer and the pattern or patterns, a layer 3 of polymer material obtained by polymerizing an organic or organometallic monomer that contains siloxane functional groups, for example tetramethyldisiloxane, in a plasma-enhanced, optionally remote plasma-enhanced, chemical vapor deposition reactor (PECVD or optionally RPECVD) reactor.The layer of polymer material is deposited so as to create, in place of the pattern and after development by decomposing this pattern, or between the two patterns without development/decomposition, a channel 4a, 4b, 4c, 4d closed over at least part of its length.

    Abstract translation: 本发明涉及一种用于在衬底上制造微通道的方法以及包括这些微通道的衬底，本发明特别适用于微电子，微流体和/或微机械系统的微结构化衬底的制造。 该方法包括在底层1的表面上产生至少一个或至少两个图案2的步骤（a）和在底层和图案或图案的顶部上沉积层（b）的步骤 通过聚合含有硅氧烷官能团的有机或有机金属单体（例如四甲基二硅氧烷）在等离子体增强的，任选地远程等离子体增强的化学气相沉积反应器（PECVD或任选的RPECVD）反应器中获得的聚合物材料3。 沉积聚合物材料层，以通过分解该图案或在两个图案之间或不在显影/分解下产生代替图案和显影之后，通道4a，4b，4c，4d在至少部分 它的长度。

    PROCEDE DE FABRICATION DE MICROCANAUX SUR UN SUPPORT ET SUPPORT COMPRENANT DE TELS MICROCANAUX
    8.
    发明公开
    PROCEDE DE FABRICATION DE MICROCANAUX SUR UN SUPPORT ET SUPPORT COMPRENANT DE TELS MICROCANAUX 有权
    一种用于微通道的一个基片上制备和具有这种微通道的基片处理

    公开(公告)号：EP2401224A1

    公开(公告)日：2012-01-04

    申请号：EP10710083.6

    申请日：2010-02-24

    Applicant: Universite Des Sciences Et Technologies De Lille

    Inventor： ABBAS, Abdennour ,  GUILLOCHON, Didier ,  BOCQUET, Bertrand ,  SUPIOT, Philippe

    IPC: B81C1/00

    CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0108 ,  B81C2201/018

    Abstract: The invention relates to a method for making microchannels on a substrate, and to a substrate including such microchannels, which can particularly be used in the production of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems. The method includes a step of (a) making at least one or at least two patterns (2) on the surface of a lower layer (1), and a step (b) of depositing, onto the lower layer and the pattern(s), a layer (3) of a polymer material produced by polymerisation in an optionally remote plasma-enhanced chemical vapour deposition reactor (PECVD, optionally RPECVD) of an organic or organometallic monomer with siloxane functions, e.g. tetramethyldisiloxane. The layer of polymer material is deposited so as to create, in the place of the pattern and after the decomposition of said pattern, or between two patterns without development-decomposition, a channel (4a, 4b, 4c, 4d), which is closed on at least a portion of the length thereof.

    Method for producing trench-like depressions in the surface of a wafer
    9.
    发明授权
    Method for producing trench-like depressions in the surface of a wafer 有权
    在晶片表面生产沟槽状凹陷的方法

    公开(公告)号：US09220852B2

    公开(公告)日：2015-12-29

    申请号：US13856637

    申请日：2013-04-04

    Applicant: Klaus Kadel

    Inventor： Klaus Kadel

    IPC: A61M11/02 ,  B81C1/00

    CPC classification number: A61M11/02 ,  B81C1/00206 ,  B81C2201/0112 ,  B81C2201/018

    Abstract: In a method of producing trench-like depressions in the surface of a wafer, particularly a silicon wafer, by plasma etching, in which the depressions are produced by alternate passivation and etching, each depression in its final geometry is provided with a protective layer of the polytetrafluoroethylene type.

    Abstract translation: 在通过等离子体蚀刻在晶片表面，特别是硅晶片的表面中产生沟槽状凹陷的方法中，其中通过交替的钝化和蚀刻产生凹陷，其最终几何形状中的每个凹陷设置有保护层 聚四氟乙烯型。

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