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    Process for producing 3-dimensional structure assembled from nanoparticles
    7.
    发明授权
    Process for producing 3-dimensional structure assembled from nanoparticles 有权
    制备由纳米粒子组装的三维结构的方法

    公开(公告)号：US09321633B2

    公开(公告)日：2016-04-26

    申请号：US14233011

    申请日：2013-03-04

    Applicant: SNU R&DB Foundation ,  Global Frontier Center for Multiscale Energy Systems

    Inventor： Hoseop Choi ,  Man Soo Choi

    IPC: B81C1/00

    CPC classification number: B81C1/00373 ,  B81C1/00031 ,  B81C2201/0187 ,  Y10T428/24893

    Abstract: The present invention relates to a process for producing a 3-dimensional structure assembled from nanoparticles by using a mask having a pattern of perforations, which comprises the steps of: in a grounded reactor, placing a mask having a pattern of perforations corresponding to a determined pattern at a certain distance above a substrate to be patterned, and then applying voltage to the substrate to form an electrodynamic focusing lens; and introducing charged nanoparticles into the reactor, the charged particles being guided to the substrate through the pattern of perforations so as to be selectively attached to the substrate with 3-dimensional shape. According to the process of the present invention, a 3-dimensional structure of various shapes can be produced without producing noise pattern, with high accuracy and high efficiency.

    Abstract translation: 本发明涉及一种通过使用具有穿孔图案的掩模从纳米颗粒制备的三维结构的方法，其包括以下步骤：在接地的反应器中，放置具有对应于确定的孔的穿孔图案的掩模 在要图案化的基板上方一定距离的图案，然后向基板施加电压以形成电动聚焦透镜; 并将带电的纳米颗粒引入反应器中，带电粒子通过穿孔图形被引导到基底，以便以三维形状选择性地附着到基底上。 根据本发明的方法，可以以高精度和高效率产生各种形状的三维结构而不产生噪声图案。

    Three-dimensional copper nanostructure and fabrication method thereof
    8.
    发明授权
    Three-dimensional copper nanostructure and fabrication method thereof 有权
    三维铜纳米结构及其制备方法

    公开(公告)号：US09139914B2

    公开(公告)日：2015-09-22

    申请号：US14259628

    申请日：2014-04-23

    Applicant: Ajou University Industry-Academic Cooperation Foundation

    Inventor： Chang-Koo Kim ,  Sung-Woon Cho

    IPC: H01L21/00 ,  C23F1/12 ,  B22F1/00 ,  C23C18/16 ,  C23C18/18 ,  C23C18/40 ,  H01L21/288 ,  C23F4/00

    CPC classification number: C23F1/12 ,  B22F1/0018 ,  B22F1/0044 ,  B22F9/02 ,  B22F2001/0037 ,  B22F2304/05 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/034 ,  C23C18/1605 ,  C23C18/1657 ,  C23C18/1893 ,  C23C18/405 ,  C23F4/00 ,  H01J2237/0203 ,  H01J2237/3341 ,  H01L21/288 ,  Y10T29/49982

    Abstract: This invention relates to a method of fabricating a three-dimensional copper nanostructure, including manufacturing a specimen configured to include a SiO2 mask; performing multi-directional slanted plasma etching to form a three-dimensional etching structure layer on the specimen; performing plating so that a multi-directional slanted plasma etched portion of the specimen is filled with a metal; removing an over-plated portion and the SiO2 mask from the metal layer; and removing a portion of a surface of the specimen other than the metal which is the three-dimensional etching structure layer. In this invention, a uniform copper nanostructure array can be obtained by subjecting a large-area specimen disposed in a Faraday cage to multi-directional slanted plasma etching using high-density plasma, forming a copper film on the etched portion of the specimen, and removing an over-plated copper film and the SiO2 mask, and the diameter of the copper nanostructure can be arbitrarily adjusted, thus attaining high applicability.

    Abstract translation: 本发明涉及一种制造三维铜纳米结构的方法，包括制造被配置为包括SiO 2掩模的试样; 执行多方向倾斜等离子体蚀刻以在样本上形成三维蚀刻结构层; 进行电镀，使得样品的多方向倾斜等离子体蚀刻部分被金属填充; 从金属层去除过镀层部分和SiO 2掩模; 除去除了作为三维蚀刻结构层的金属以外的试样的表面的一部分。 在本发明中，通过对设在法拉第笼中的大面积试样进行多层倾斜等离子体蚀刻，使用高密度等离子体，在试样的蚀刻部分上形成铜膜，可以得到均匀的铜纳米结构体， 去除过镀铜膜和SiO 2掩模，并且可以任意调整铜纳米结构的直径，从而获得高适用性。

    METHODS AND APPARATUS FOR HIGH-THROUGHPUT FORMATION OF NANO-SCALE ARRAYS
    9.
    发明申请
    METHODS AND APPARATUS FOR HIGH-THROUGHPUT FORMATION OF NANO-SCALE ARRAYS 审中-公开
    用于高通量形成纳米尺度阵列的方法和装置

    公开(公告)号：WO2011017487A2

    公开(公告)日：2011-02-10

    申请号：PCT/US2010/044493

    申请日：2010-08-05

    Applicant: CORNELL UNIVERSITY ,  TAN, Christine, P. ,  LIN, David, M. ,  CRAIGHEAD, Harold, G.

    Inventor： TAN, Christine, P. ,  LIN, David, M. ,  CRAIGHEAD, Harold, G.

    IPC: H01L21/027

    CPC classification number: B41M3/006 ,  B81C1/00031 ,  B81C2201/0184 ,  B81C2201/0187

    Abstract: An apparatus for forming an array of deposits on a substrate is disclosed. The apparatus may include a stencil capable of releasable attached to the substrate and having an array of openings and at least one alignment mark. The apparatus may further include a high throughput deposition printer aligned with the stencil to form an array of deposits on the substrate. The array of deposits may be aligned with the array of openings through the at least one alignment mark and an optional alignment device. Methods of manufacturing the stencil and using it to generate multiplexed or combinatorial arrays are also disclosed.

    Abstract translation: 公开了一种用于在衬底上形成沉积物阵列的装置。 该设备可以包括能够可释放地连接到基底并具有开口阵列和至少一个对准标记的模版。 该设备还可以包括与模板对准的高通量沉积打印机，以在衬底上形成沉积物阵列。 沉积物阵列可以通过至少一个对准标记和可选的对准装置与开口阵列对齐。 还公开了制造模板并将其用于生成多路复用或组合阵列的方法。

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