公开(公告)号：WO2011162563A3

公开(公告)日：2012-05-31

申请号：PCT/KR2011004610

申请日：2011-06-24

Applicant: KOREA RES INST OF STANDARDS ,  LEE TAE GEOL ,  CHO YOUNG-LAI ,  SON MI YOUNG

Inventor： LEE TAE GEOL ,  CHO YOUNG-LAI ,  SON MI YOUNG

IPC: G01N33/68 ,  G01N23/225 ,  G01N33/573 ,  G01N33/574

CPC classification number: G01N33/57488 ,  G01N33/553 ,  G01N33/6848

Abstract: A detection kit according to the present invention is a disease detection kit which is used together with secondary ion mass spectrometry to detect the disease marker contained in a biological sample. The detection kit comprises: a base on which a noble metal film is formed; a reactant which contains a peptide that specifically reacts with the disease marker; first storage means in which the reactant is stored; a sample which contains the biological sample of a possible disease carrier; second storage means in which the sample is stored; mixing means for mixing the reactant and the sample to produce a detection substance which contains the peptide which specifically reacts with the disease marker contained in the biological sample; and contact means for enabling the detection substance produced by the mixing means to contact the base, so as to bind the specifically reacted material to the noble metal film of the base.

Abstract translation: 根据本发明的检测试剂盒是与二次离子质谱法一起使用以检测生物样品中所含的疾病标志物的疾病检测试剂盒。 检测试剂盒包括：形成有贵金属膜的基材; 含有特异性与疾病标记反应的肽的反应物; 存储反应物的第一储存装置; 包含可能的疾病携带者的生物样品的样品; 存储样品的第二存储装置; 混合装置，用于混合反应物和样品以产生检测物质，其含有与生物样品中所含的疾病标志物特异性反应的肽; 以及用于使得由混合装置产生的检测物质能够接触基底的接触装置，以便将特异反应的材料与基底的贵金属膜结合。

公开(公告)号：WO2011162566A3

公开(公告)日：2012-05-03

申请号：PCT/KR2011004616

申请日：2011-06-24

Applicant: KOREA RES INST OF STANDARDS ,  JIN JONG HAN ,  KIM JAE WAN ,  KIM JONG AHN ,  KANG CHU-SHIK

Inventor： JIN JONG HAN ,  KIM JAE WAN ,  KIM JONG AHN ,  KANG CHU-SHIK

IPC: G01B11/22 ,  G01B9/02 ,  G01B11/08 ,  G01N21/45

CPC classification number: G01B11/22 ,  G01B9/02008 ,  G01B11/12 ,  G01B2210/56 ,  G01N21/9501 ,  G01N2021/95653

Abstract: The present invention pertains to a device and a method for measuring a via hole of a silicon wafer, wherein it is possible to precisely measure the depth of the via hole without damaging the wafer. Broadband infrared light is radiated to a silicon wafer which has a superior light transmission property, so that the depth of the via hole may be measured from the light which is reflected from each boundary surface of the wafer and the interference signal of reference light. The via hole measuring device according to the present invention includes: a light source unit for generating broadband infrared light; and an interferometer for radiating the light generated from the light source unit to a silicon wafer, so as to measure the depth of a via hole formed on the wafer according to the spectrum period of the interference signal of the light, which is reflected from the silicon wafer.

Abstract translation: 本发明涉及用于测量硅晶片的通孔的装置和方法，其中可以精确地测量通孔的深度而不损坏晶片。 宽带红外光被照射到具有优异的透光性的硅晶片，从而可以从从晶片的每个边界面反射的光和参考光的干涉信号测量通孔的深度。 根据本发明的通孔测量装置包括：用于产生宽带红外光的光源单元; 以及干涉仪，用于将从光源单元产生的光发射到硅晶片，以便根据光的干涉信号的光谱周期来测量形成在晶片上的通孔的深度，该距离从 硅晶片。

公开(公告)号：WO2011056040A3

公开(公告)日：2011-09-15

申请号：PCT/KR2010007865

申请日：2010-11-09

Applicant: KOREA RES INST OF STANDARDS ,  UNIV CHUNG ANG IND ,  RYU KWON SANG ,  PARK SOO YOUNG ,  LEE YUN HEE ,  YOON KEE BONG

Inventor： RYU KWON SANG ,  PARK SOO YOUNG ,  LEE YUN HEE ,  YOON KEE BONG

IPC: G01N27/83 ,  G01N27/82

CPC classification number: G01N27/87

Abstract: The present invention is a non-destructive detecting apparatus using a magnetic flux leakage measurement, which prevents the inconveniences of magnetic flux leakage detection equipment, and which can simultaneously be complexly applicable to other traveling-type detection equipment. In detail, the non-destructive detecting apparatus using a magnetic flux leakage measurement comprises: a main body having driving wheels attached thereto; a permanent magnet arranged in the main body so as to produce an attracting force between the main body and an object to be detected; and a sensor support unit arranged in the main body in order to fix a magnetic field detection sensor for detecting the magnetic flux leakage occurring in the defective portion of the object to be detected, which is magnetized by the permanent magnet.

Abstract translation: 本发明是一种使用磁通泄漏测量的无损检测装置，其防止漏磁检测设备的不便，并且可以同时复合地应用于其他行驶型检测设备。 具体而言，使用磁通泄漏测量的非破坏性检测装置包括：具有安装驱动轮的主体; 永磁体，其布置在主体中以在主体和待检测物体之间产生吸引力; 以及传感器支撑单元，其布置在主体中，以便固定磁场检测传感器，用于检测由被永久磁铁磁化的待检测对象的缺陷部分中发生的磁通泄漏。

公开(公告)号：WO2011028054A3

公开(公告)日：2011-07-21

申请号：PCT/KR2010005990

申请日：2010-09-03

Applicant: KOREA RES INST OF STANDARDS ,  LEE WOO ,  KIM JUNG KIL ,  KIM JAE CHEON

Inventor： LEE WOO ,  KIM JUNG KIL ,  KIM JAE CHEON

IPC: B82B3/00 ,  B82B1/00 ,  C01B33/18

CPC classification number: C01B33/02 ,  B82Y30/00 ,  C01P2004/01 ,  C01P2004/16 ,  C01P2006/12

Abstract: Disclosed is a production method for a silicon nanowire array, comprising the steps of: (a) preparing a porous metal thin film, (b) placing the porous metal thin film in contact with a silicon substrate, and (c) etching the silicon substrate by means of a silicon etching solution. The present invention makes it possible to produce vertically aligned silicon nanowires of large surface area by using the porous metal thin film as a catalyst, and makes it possible to produce nanowires having a porous structure, a porous nodular structure, an inclined structure and a zig-zag structure, which are different from nanowires of the prior art in their shape and crystallographic orientation, by adjusting etching conditions such as the composition of the silicon etching solution and the etching temperature in the step in which the silicon substrate is subjected to wet etching.

Abstract translation: 公开了一种硅纳米线阵列的制造方法，包括以下步骤：（a）制备多孔金属薄膜，（b）将多孔金属薄膜与硅衬底接触，（c）蚀刻硅衬底 通过硅蚀刻溶液。 本发明可以通过使用多孔金属薄膜作为催化剂来制造具有大表面积的垂直取向的硅纳米线，并且可以制备具有多孔结构，多孔结构，倾斜结构和锯齿的纳米线 通过在硅衬底经受湿蚀刻的步骤中调整诸如硅蚀刻溶液的组成和蚀刻温度的蚀刻条件，它们与现有技术的纳米线在其形状和晶体取向上不同 。

公开(公告)号：WO2011052926A2

公开(公告)日：2011-05-05

申请号：PCT/KR2010007235

申请日：2010-10-21

Applicant: KOREA RES INST OF STANDARDS ,  BAEK UN BONG ,  NAHM SEUNG HOON ,  LEE HAE MOO ,  LEE YUN-HEE

Inventor： BAEK UN BONG ,  NAHM SEUNG HOON ,  LEE HAE MOO ,  LEE YUN-HEE

IPC: G01N3/12 ,  G01M3/36

CPC classification number: G01N3/12

Abstract: The present invention relates to a device for testing resist pressure of a vessel wherein gas is stored at a high compressed state, before the use of the vessel, and to a method for testing resist pressure of a vessel by using the testing device. The device includes: the vessel provided as an object to which a resist pressure test is carried out; an elastic tube placed in the interior of the vessel and adapted to fill a liquid into the interior thereof; a pressurizing means adapted to apply a predetermined pressure to the elastic tube to allow the elastic tube to be expanded; and a pressure gauge adapted to gauge the pressure in the interior of the vessel, wherein a gas is filled into the vessel to apply a predetermined pressure to the interior of the vessel by the expansion of the elastic tube.

Abstract translation: 本发明涉及一种用于在使用容器之前以高压缩状态储存气体的容器的抗压力测试装置以及通过使用该测试装置测试容器的抗压力的方法。 该装置包括：提供作为进行抗压力测试的物体的容器; 放置在容器内部并适于将液体填充到其内部的弹性管; 适于将预定压力施加到所述弹性管以允许所述弹性管膨胀的加压装置; 以及适于测量容器内部的压力的压力计，其中气体被填充到容器中，以通过弹性管的膨胀将预定的压力施加到容器的内部。

公开(公告)号：WO2010053288A2

公开(公告)日：2010-05-14

申请号：PCT/KR2009006449

申请日：2009-11-04

Applicant: KOREA RES INST OF STANDARDS ,  UNIV CHUNG ANG IND ,  LEE YUN-HEE ,  RYU KWON SANG ,  NAHM SEUNG-HOON ,  LEE WAN KYU ,  YOON KEE-BONG

Inventor： LEE YUN-HEE ,  RYU KWON SANG ,  NAHM SEUNG-HOON ,  LEE WAN KYU ,  YOON KEE-BONG

IPC: G01R1/073

CPC classification number: G01R1/06716

Abstract: The present invention relates to a constant-pressure non-destructive contact probe device including non-destructive contact probe. More specifically, the invention concerns the constant-pressure non-destructive contact probe device that includes a constant-pressure non-destructive contact probe to solve the non-equivalency in the contact between the non-destructive contact probe and the surface of a sample.

Abstract translation: 本发明涉及一种包括非破坏性接触探针的恒压非破坏性接触探针装置。 更具体地，本发明涉及恒压非破坏性接触探针装置，其包括恒压非破坏性接触探针以解决非破坏性接触探针与样本表面之间的接触的非等效性。

公开(公告)号：WO2009082109A8

公开(公告)日：2010-03-18

申请号：PCT/KR2008007367

申请日：2008-12-12

Applicant: CHUNG CHIN-WOOK ,  KOREA RES INST OF STANDARDS ,  LEE MINHYONG ,  JANG SUNG-HO ,  CHOI IK-JIN ,  KIM JUNG-HYUNG ,  SHIN YONG-HYEON

Inventor： CHUNG CHIN-WOOK ,  LEE MINHYONG ,  JANG SUNG-HO ,  CHOI IK-JIN ,  KIM JUNG-HYUNG ,  SHIN YONG-HYEON

IPC: H01L21/66

CPC classification number: H01J37/32935

Abstract: Provided are a process monitoring apparatus and method. The process monitoring apparatus includes a process chamber in which a process is performed, a probe assembly disposed on the process chamber, and comprising a probe electrode, a plasma generator generating plasma around the probe assembly, and a drive processor applying an alternating current (AC) voltage having at least 2 fundamental frequencies to the probe assembly, and extracting process monitoring parameters.

Abstract translation: 提供了一种过程监控装置和方法。 过程监控装置包括处理室，其中进行处理，设置在处理室上的探针组件，并且包括探针电极，在探针组件周围产生等离子体的等离子体发生器，以及施加交流电的驱动处理器 ）电压，其具有至少2个基本频率到探针组件，以及提取过程监控参数。

公开(公告)号：WO2010013977A2

公开(公告)日：2010-02-04

申请号：PCT/KR2009004300

申请日：2009-07-31

Applicant: KOREA RES INST OF STANDARDS ,  AN SANG JUNG ,  PARK BUONG CHON ,  KAHNG YUNG-HO ,  CHOI JIN HO ,  JEONG KWANG HOON

Inventor： AN SANG JUNG ,  PARK BUONG CHON ,  KAHNG YUNG-HO ,  CHOI JIN HO ,  JEONG KWANG HOON

IPC: G01Q70/12

CPC classification number: G01Q70/12

Abstract: The present invention relates to SPM nanoprobes and the preparation method thereof, more particularly, to SPM nanoprobes comprising a spheroid deposit capped-nanoneedle bonded to one end of a mother tip, wherein the spheroid deposit is formed by particle beam induced deposition and is characterized in that the ratio of the diameter of the spheroid deposit to that of the nanoneedle is in the range of 1.5 to 8.5. The SPM nanoprobe according to the present invention is capable of imaging or measuring a irregularly curved or complicated surface, pattern and/or a frictional or adhesive force thereof and controlling size of a spheroid deposit formed at the end portion of nanoneedle and the ratio of the diameter of the spheroid deposit to that of the nanoneedle arbitrarily.

Abstract translation: 本发明涉及SPM纳米探针及其制备方法，更具体地说，涉及一种SPM纳米探针，其包含与母体尖端的一端结合的球状体沉积物封端的纳米针，其中所述球状体沉积物是通过粒子束诱导沉积形成的，其特征在于 球状体沉积物的直径与纳米针的直径的比率在1.5至8.5的范围内。 根据本发明的SPM纳米探针能够成像或测量不规则弯曲或复杂的表面，图案和/或其摩擦或粘合力，并且控制在纳米针的端部处形成的球体沉积物的尺寸和 球状物的直径任意地沉积到纳米针的直径。

公开(公告)号：WO2010002184A2

公开(公告)日：2010-01-07

申请号：PCT/KR2009003573

申请日：2009-07-01

Applicant: KOREA RES INST OF STANDARDS ,  UNIV CHUNG ANG IND ,  RYU KWON SANG ,  PARK SOO YOUNG ,  PARK JONG SEO ,  CHEONG IN HYUN ,  YOON KEE-BONG

Inventor： RYU KWON SANG ,  PARK SOO YOUNG ,  PARK JONG SEO ,  CHEONG IN HYUN ,  YOON KEE-BONG

IPC: G01R33/02

CPC classification number: G01R33/1223

Abstract: The present invention relates to a reversible permeability measuring device for measuring the magnetic characteristics and the magnetic flux change in a specimen, as one of a plurality of non-destructive methods for evaluating mechanical properties. The reversible permeability measuring device of the present invention directly measures a magnetic field change induced at the surface of a specimen through the use of a magnetic potentiometer (20) and a flux meter (50), thereby accurately evaluating the deterioration of materials.

Abstract translation: 本发明涉及用于测量试样中的磁特性和磁通量变化的可逆磁导率测量装置，作为用于评估机械特性的多种非破坏性方法之一。 本发明的可逆磁导率测量装置通过使用磁电位计（20）和磁通计（50）直接测量在样本表面处感应的磁场变化，由此准确地评估材料的劣化。

公开(公告)号：WO2013172561A3

公开(公告)日：2014-01-03

申请号：PCT/KR2013003469

申请日：2013-04-23

Applicant: KOREA RES INST OF STANDARDS

Inventor： KIM JONG-AHN ,  KIM JAE-WAN ,  EOM TAE-BONG ,  KANG CHU-SHIK ,  JIN JONG-HAN

IPC: G01D5/26 ,  G01D5/244

CPC classification number: G01D5/34707 ,  G01D5/2455 ,  G01D5/34746 ,  G01D5/34776 ,  G01D5/34792

Abstract: The present invention provides an absolute position measurement method, absolute position measurement device, and scale. The scale includes a scale pattern formed by replacing repetitively arranged pseudo-random codes with a sequence of N-stage linear feedback transition resisters by using a first symbol having a first width and representing a first state and a second symbol having the first width and representing a second state. The first symbol is divided into two or more first symbol areas, the second symbol is divided into two or more second symbol areas, and there is at least one overlap area having the same structure due to the overlap of the first symbol and the second symbol.

Abstract translation: 本发明提供绝对位置测量方法，绝对位置测量装置和刻度。 缩放比例包括通过使用具有第一宽度并表示第一状态的第一符号和具有第一宽度的第二符号代替重复排列的伪随机码与N级线性反馈转换电阻序列而形成的比例模式， 第二个状态 第一符号被划分为两个或更多个第一符号区域，第二符号被划分为两个或更多个第二符号区域，并且由于第一符号和第二符号的重叠而存在具有相同结构的至少一个重叠区域 。