公开(公告)号：KR1020130134791A

公开(公告)日：2013-12-10

申请号：KR1020120058559

申请日：2012-05-31

Applicant: 삼성전자주식회사

Inventor： 안정착 ,  이하라히사노리

IPC: H01L27/146

CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/37457

Abstract: A unit pixel of an image sensor is disclosed. According to the embodiment of the present invention, the unit pixel of an image sensor includes a photoelectric conversation device generating photo charges changes according to the intensity of incident light, a transfer transistor transferring the charges changes to a floating diffusion according to a transfer control signal, and a sufflement transistor connected to the floating diffusion and the transfer transistor transferring the charges changes to the floating diffusion. According to the embodiment, the area of unit pixel is minimized by one transistor except the transfer transistor, the resolution of a pixel array is improved, and the power consumption is reduced.

Abstract translation: 公开了图像传感器的单位像素。 根据本发明的实施例，图像传感器的单位像素包括根据入射光的强度产生光电荷变化的光电对话装置，根据传送控制信号将传送电荷的传输晶体管转换为浮动扩散 并且连接到浮动扩散部分的偏移晶体管和传输电荷的转移晶体变为浮动扩散。 根据实施例，除了传输晶体管之外，单个像素的面积被一个晶体管最小化，像素阵列的分辨率提高，并且功耗降低。

公开(公告)号：KR1020130128992A

公开(公告)日：2013-11-27

申请号：KR1020120053265

申请日：2012-05-18

Applicant: 삼성전자주식회사

Inventor： 안정착 ,  이경호 ,  정희근 ,  최상준 ,  박종은

IPC: H01L27/146 ,  H04N5/335

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643

Abstract: The present invention provides a highly integrated image sensor capable of removing image lag and a manufacturing method thereof. The image sensor facilitates the transfer of charges accumulated in a photoelectric conversion unit as a depression of a transfer gate has a flat lower surface and a round lower edge.

Abstract translation: 本发明提供能够消除图像滞后的高度集成的图像传感器及其制造方法。 当传输门的凹陷具有平坦的下表面和圆的下边缘时，图像传感器便于传递累积在光电转换单元中的电荷。

公开(公告)号：KR1020130033830A

公开(公告)日：2013-04-04

申请号：KR1020110097761

申请日：2011-09-27

Applicant: 삼성전자주식회사

Inventor： 안정착

IPC: H04N5/3745 ,  H04N5/357 ,  H01L27/146

CPC classification number: H04N5/3745 ,  G02B5/20 ,  H01L27/146

Abstract: PURPOSE: An image sensor and an image processing system are provided to efficiently perform automatic dark level compensation. CONSTITUTION: A first optical black pixel generates a first optical black signal by blocking light using a black filter. A second optical black pixel generates a second optical black signal by blocking the illuminance of the light which is lower than reference illuminance. A third optical black pixel(910) generates a third optical signal by blocking the illuminance of the light which is higher than the reference illuminance. The third optical black pixel includes a micro lens(911), a light blocking device, an insulating layer(913), metal(914), a unit pixel circuit area(916), and a substrate(618). [Reference numerals] (913) Insulating layer; (916) Unit pixel circuit;

Abstract translation: 目的：提供图像传感器和图像处理系统，以有效执行自动暗电平补偿。 构成：第一光学黑色像素通过使用黑色滤光器阻挡光而产生第一光学黑色信号。 第二光学黑色像素通过阻挡低于基准照度的光的照度而产生第二光学黑色信号。 第三光学黑色像素（910）通过阻挡比参考照度高的光的照度来产生第三光学信号。 第三光学黑色像素包括微透镜（911），遮光装置，绝缘层（913），金属（914），单位像素电路区域（916）和基板（618）。 （参考号）（913）绝缘层; （916）单位像素电路;

公开(公告)号：KR101154389B1

公开(公告)日：2012-06-15

申请号：KR1020070096399

申请日：2007-09-21

Applicant: 삼성전자주식회사

Inventor： 안정착

IPC: H01L27/146

Abstract: 이미지 센서의 픽셀이 제공된다. 상기 픽셀은 제2 반도체 패턴에 형성된 광전변환소자, 상기 광전변환소자에 동작상 결합하며 상기 제2 반도체 패턴으로부터 떨어진 제1 반도체 패턴에 형성된 적어도 하나의 트랜지스터, 및 상기 광전변환소자에서 발생한 신호전하를 상기 적어도 하나의 트랜지스터로 이송하기 위해 상기 제2 반도체 패턴에 형성된 이송 게이트를 구비한다. 상기 광전변환소자는 상기 제2 반도체 패턴의 내부에 형성된 제1도전형 영역 및 상기 제1도전형의 영역을 감싸도록 상기 제2 반도체 패턴에 형성된 제2도전형의 영역을 구비한다.
이미지 센서, 픽셀, 광전변환소자, 필팩터

公开(公告)号：KR1020120046591A

公开(公告)日：2012-05-10

申请号：KR1020100108327

申请日：2010-11-02

Applicant: 삼성전자주식회사

Inventor： 이경호 ,  안정착

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14687

Abstract: PURPOSE: An image sensor having a deep guard ring and a noise blocking area for blocking noise in a back light accepting image sensor and a manufacturing method thereof are provided to efficiently eliminate crosstalk noise from a substrate since an ion implantation layer is separated by forming a noise prevention domain in a deep guard ring region of a photo diode. CONSTITUTION: An epi layer(202) is formed on a back side of an ion implantation layer(212). A well impurity layer(204) of a first type is formed on the epi layer. A well impurity layer(203) of a second type is formed in the rest area excluding the well impurity layer of the first type. A deep guard ring(206) is formed to be contacted with the well impurity layer of the first type and reach the back side of the ion implantation layer. An interlayer dielectric layer and a wiring are formed on the well impurity layer of the first type and the well impurity layer of the second type.

Abstract translation: 目的：提供一种具有深保护环和用于阻挡背光接收图像传感器中的噪声的噪声阻挡区域的图像传感器及其制造方法，以有效地消除来自衬底的串扰噪声，因为离子注入层通过形成 光电二极管的深保护环区域中的防噪声区域。 构成：外离子层（202）形成在离子注入层（212）的背面。 在外延层上形成第一类型的良好的杂质层（204）。 在除了第一类型的阱杂质层之外的其余区域中形成第二类型的良好的杂质层（203）。 深保护环（206）形成为与第一类型的阱杂质层接触并到达离子注入层的背面。 在第一种类型的阱杂质层和第二类型的阱杂质层上形成层间绝缘层和布线。

公开(公告)号：KR1020120043441A

公开(公告)日：2012-05-04

申请号：KR1020100104747

申请日：2010-10-26

Applicant: 삼성전자주식회사

Inventor： 심은섭 ,  안정착 ,  김범석 ,  이경호

IPC: H01L27/146

CPC classification number: H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

Abstract: PURPOSE: A back projection type active pixel senor array, a manufacturing method thereof, and a back projection type image sensor including the same are provided to effectively prevent crosstalk between pixels, thereby improving color reproducibility. CONSTITUTION: A semiconductor substrate(120) includes a front surface and a rear surface. The semiconductor substrate comprises light receiving devices and a pixel separator(122). A wiring layer(130) is arranged on the front surface of the semiconductor substrate. An optical filter layer(110) is arranged on the rear surface of the semiconductor substrate. The thickness of the pixel separator is reduced while approaching to the rear surface from a certain point of the semiconductor substrate.

Abstract translation: 目的：提供背投型有源像素传感器阵列及其制造方法以及包括该背投影型图像传感器的背投影型图像传感器，以有效地防止像素之间的串扰，从而提高颜色再现性。 构成：半导体衬底（120）包括前表面和后表面。 半导体衬底包括光接收装置和像素分离器（122）。 布线层（130）布置在半导体衬底的前表面上。 在半导体衬底的后表面上布置有滤光层（110）。 像素分离器的厚度在从半导体衬底的某一点接近背面时减小。

公开(公告)号：KR1020120024139A

公开(公告)日：2012-03-14

申请号：KR1020100086854

申请日：2010-09-06

Applicant: 삼성전자주식회사

Inventor： 이경호 ,  김범석 ,  안정착

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/1462 ,  H01L27/14629

Abstract: PURPOSE: A unit pixel and a complementary metal oxide semiconductor image sensor including the same are provided to improve light receiving sensitivity while efficiently controlling optical cross-talk. CONSTITUTION: An interlayer dielectric layer(433) is laminated on the top of a semiconductor substrate(470). The interlayer dielectric layer is composed of materials in which dielectric permittivity is smaller than the dielectric permittivity of silicon dioxide. A light pipe(435) is formed between interlayer dielectric layers in order to guide incident light to an optical detecting device. A color filter(420) is laminated on the top of the light pipe. A micro lens(410) is laminated on the top of the color filter.

Abstract translation: 目的：提供包括其的单位像素和互补金属氧化物半导体图像传感器，以在有效地控制光学串扰的同时提高光接收灵敏度。 构成：在半导体衬底（470）的顶部上层叠层间绝缘层（433）。 层间介电层由介电常数小于二氧化硅的介电常数的材料构成。 在层间电介质层之间形成光管（435），以将入射光引导到光学检测装置。 滤光器（420）层叠在光管的顶部。 微透镜（410）层叠在滤色器的顶部。

公开(公告)号：KR1020110095696A

公开(公告)日：2011-08-25

申请号：KR1020100015305

申请日：2010-02-19

Applicant: 삼성전자주식회사

Inventor： 안정착

IPC: H01L27/146

CPC classification number: H04N9/07 ,  H01L27/14621 ,  H01L27/14629

Abstract: PURPOSE: A CMOS image sensor is provided to reduce the loss of light inputted to a photoelectric converting device by filling a planarization layer with larger reflectivity than the reflectivity of an insulation structure in an opening unit. CONSTITUTION: A photoelectric converting device(110) is formed on a semiconductor substrate. Interlayer dielectric layers are laminated on the upper side of the semiconductor substrate and define an opening unit(240) on the upper side of the photoelectric converting device. A color filter is formed in the opening area. A planarization film(260) fills the opening unit on a color filter and has larger reflectivity than the average reflectivity of the interlayer dielectric layer. The interlayer dielectric layers include a plurality of wirings which are electrically connected to the photoelectric converting device. The color filter is located under the wiring which is arranged on the lowermost layer.

Abstract translation: 目的：提供一种CMOS图像传感器，以通过填充具有比开口单元中的绝缘结构的反射率更大的反射率的平坦化层来减少输入到光电转换装置的光的损耗。 构成：在半导体基板上形成光电转换元件（110）。 层间电介质层层叠在半导体衬底的上侧，并且在光电转换装置的上侧限定开口单元（240）。 在开口区域形成滤色器。 平坦化膜（260）填充滤色器上的开口单元并且具有比层间介电层的平均反射率更大的反射率。 层间电介质层包括电连接到光电转换装置的多个布线。 滤色器位于布置在最下层的布线下方。

公开(公告)号：KR1020110083936A

公开(公告)日：2011-07-21

申请号：KR1020100003930

申请日：2010-01-15

Applicant: 삼성전자주식회사

Inventor： 정태섭 ,  김범석 ,  안정착 ,  이경호

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14627 ,  H01L27/1464 ,  H04N5/3745

Abstract: PURPOSE: A unit pixel including a micro lens for photo refraction, a backside illumination CMOS image sensor including the same, and a manufacturing method thereof are provided to improve the sensitivity of light by suppressing the number of photons. CONSTITUTION: A micro lens(110) for photon refraction refracts photons to the center of a photo diode(PD1,PD2). The photons are reflected from a metal layer(130). The micro lens for photon refraction is arranged between the photo diode and the metal layer. The micro lens for the photon refraction is convex in a metal layer direction. The thickest part of the micro lens for photo refraction is 2000 to 3500 angstroms.

Abstract translation: 目的：提供包括用于光折射的微透镜的单元像素，包括该微透镜的背面照明CMOS图像传感器及其制造方法，以通过抑制光子数来提高光的灵敏度。 构成：用于光子折射的微透镜（110）将光子折射到光电二极管（PD1，PD2）的中心。 光子从金属层（130）反射。 用于光子折射的微透镜布置在光电二极管和金属层之间。 用于光子折射的微透镜在金属层方向上是凸的。 用于光折射的微透镜的最厚部分为2000〜3500埃。

公开(公告)号：KR1020100022545A

公开(公告)日：2010-03-03

申请号：KR1020080081105

申请日：2008-08-20

Applicant: 삼성전자주식회사

Inventor： 이용제 ,  안정착 ,  박종은 ,  장동윤

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

Abstract: PURPOSE: An image sensor and an image sensing system including of the same are provided to increase the sensitivity of an image sensor by improving an aperture ratio of the image sensing system. CONSTITUTION: An image sensor comprises a conductive well(120) and an optical detecting device(110). A conductive well is formed in the semiconductor substrate. The optical detecting device is formed in the lower part of the conductive well. The optical detecting device is corresponded to the conductive well. The image sensor comprises a charge transport unit(150). The charge transport unit is adjacent to one side of the conductive well. The charge transport unit is formed in a recess region of the semiconductor substrate. The image sensor comprises an electric charge detection part(160). The electric charge detection part detects the sensing signal. The sensing signal is transmitted from the optical detecting device through the charge transport unit.

Abstract translation: 目的：提供一种图像传感器和包括其的图像感测系统，以通过改善图像感测系统的孔径比来增加图像传感器的灵敏度。 构成：图像传感器包括导电孔（120）和光学检测装置（110）。 在半导体衬底中形成导电阱。 光学检测装置形成在导电孔的下部。 光学检测装置对应于导电孔。 图像传感器包括电荷输送单元（150）。 电荷输送单元与导电孔的一侧相邻。 电荷输送单元形成在半导体基板的凹部区域中。 图像传感器包括电荷检测部（160）。 电荷检测部检测感测信号。 感测信号通过电荷输送单元从光学检测装置发送。