公开(公告)号：KR100504666B1

公开(公告)日：2005-08-03

申请号：KR1020020069883

申请日：2002-11-12

Applicant: 한국전자통신연구원

Inventor： 정문연 ,  전치훈

IPC: H01L21/027

CPC classification number: B81C1/00492 ,  G03F7/0035 ,  G03F7/161

Abstract: 본 발명은 감광막 패턴 형성 방법에 관한 것으로, 반도체 소자 또는 MEMS 소자 제고 공정중 고단차 수직 트렌치의 개구부를 DFR으로 봉쇄하여 포토리소그라피를 가능하게 하고, 감광막 패턴을 형성하기 위해 감광막을 스핀 도포 방식으로 도포할 경우 감광막이 트렌치 내부로 흘러 들어가는 것이 예방할 수 있으며, 고단차 수직 트렌치의 개구부 가장자리에 스핀도포하는 감광막을 안정하게 부착할 수 있는 감광막 패턴 형성 방법을 제공한다.

公开(公告)号：KR100494561B1

公开(公告)日：2005-06-13

申请号：KR1020020073471

申请日：2002-11-25

Applicant: 한국전자통신연구원

Inventor： 정문연 ,  전치훈 ,  김윤태

IPC: H01L29/00 ,  B82Y10/00

CPC classification number: G09G3/3648

Abstract: Provided are an electric switching device with improved reliability and improved speed characteristics and an electric circuit device having the electric switching device. In the electric switching device, a first area is formed on an insulating substrate, and a second area formed on the insulating substrate such as to be a predetermined apart from the first area. The first and second areas contract or expand depending on the intensity of a laser.

公开(公告)号：KR100489810B1

公开(公告)日：2005-05-17

申请号：KR1020030029763

申请日：2003-05-12

Applicant: 한국전자통신연구원

Inventor： 김창규 ,  이명래 ,  최창억 ,  전치훈

IPC: G02B26/00

CPC classification number: G02B6/29358 ,  G02B6/29389 ,  G02B6/29395 ,  G02B6/32

Abstract: 본 발명은 외부 자기장에 대해 수직 방향으로 흐르는 전류의 방향에 따라 전자기력의 방향이 바뀌는 원리를 이용하여 두 반사경 사이의 거리가 가까워지는 방향과 멀어지는 방향으로 구동되도록 한 파장가변 필터에 관한 것이다. 본 발명의 파장가변 필터는 한쪽 방향으로만 구동되는 기존의 파장가변 필터와 동일한 기계적 구조 및 파장가변 범위을 필요로 하는 경우에는 필터 구동에 필요한 힘을 절반으로 낮추고 고착현상이 발생할 가능성을 줄일 수 있으며, 같은 구동력으로 동일한 파장가변 범위를 구현하는 경우에는 공진 주파수를 높게 하여 소자의 구동 시간을 줄일 수 있다. 또한 정전기력으로 구동되는 구조에 비하여 낮은 전압으로 구동이 가능하다.

公开(公告)号：KR100451409B1

公开(公告)日：2004-10-06

申请号：KR1020020062750

申请日：2002-10-15

Applicant: 한국전자통신연구원

Inventor： 류호준 ,  하두영 ,  전치훈 ,  김윤태

IPC: G02B26/08

CPC classification number: G02B26/085 ,  Y10S359/90

Abstract: The present invention relates to a micro-optical switch and comprises an external frame having a plurality of holes inside; an internal frame positioned in the plurality of holes and having holes inside; light reflecting means positioned inside the holes of the internal frame; external magnetic substances positioned at both sides of the external frame; outside torsion hinge for connecting the external frame to the internal frame and having 45° to the magnetic field produced by the external magnetic substances; inside torsion hinge for connecting the internal frame to the light reflecting means and for being perpendicular to said outside torsion hinge; an outside coil wired in the internal frame; and an inside coil wired in the light reflecting means, and is characterized in that the light reflecting means and the internal frame are preferably rotated by the inside torsion hinge and the outside torsion hinge as an axis when a current is applied to the inside coil and the outside coil.

Abstract translation: 微型光开关技术领域本发明涉及一种微型光开关，其包括内部具有多个孔的外部框架; 内部框架，所述内部框架位于所述多个孔中并且在内部具有孔; 位于内框架的孔内的光反射装置; 位于外框两侧的外部磁性物质; 外部扭转铰链，用于将外部框架连接到内部框架并具有45°角; 到由外部磁性物质产生的磁场; 内部扭转铰链，用于将内部框架连接到光反射装置并垂直于所述外部扭转铰链; 外部线圈连接在内部框架中; 以及布置在光反射装置中的内侧线圈，并且其特征在于，当电流施加到内侧线圈时，光反射装置和内侧框架优选地通过内侧扭转铰链和外侧扭转铰链作为轴旋转，并且 外线圈。

公开(公告)号：KR100449069B1

公开(公告)日：2004-09-18

申请号：KR1020010056159

申请日：2001-09-12

Applicant: 한국전자통신연구원

Inventor： 양해식 ,  전치훈 ,  최창억 ,  김윤태

IPC: B81B7/04

CPC classification number: B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00853 ,  B01J2219/00873 ,  G01N27/403

Abstract: The present invention relates to a microelectrode, a microelectrode array, and a method of manufacturing the microelectrode of which temperature can be controlled. The microelectrode comprises a sealed cavity formed in a silicon substrate for thermal isolation, a microheater formed on the sealed cavity, and an electrode heated indirectly by the microheater. According to the present invention, it is possible to manufacture with CMOS process the microelectrode and the microelectrode array which have excellent electric insulation and thermal isolation between a microheater and a silicon substrate, which has a small power consumption, which has high heating and cooling speed and which has no corrosion.

Abstract translation: 微电极，微电极阵列及其制造方法技术领域本发明涉及一种微电极，微电极阵列以及能够控制温度的微电极的制造方法。 微电极包括形成在用于热绝缘的硅衬底中的密封腔，形成在密封腔上的微加热器和由微加热器间接加热的电极。 根据本发明，能够利用CMOS工艺来制造具有高加热和冷却速度的功耗小的微加热器和硅衬底之间具有优异的电绝缘和热隔离的微电极和微电极阵列 并且没有腐蚀。

公开(公告)号：KR1020040033598A

公开(公告)日：2004-04-28

申请号：KR1020020062750

申请日：2002-10-15

Applicant: 한국전자통신연구원

Inventor： 류호준 ,  하두영 ,  전치훈 ,  김윤태

IPC: G02B26/08

CPC classification number: G02B26/085 ,  Y10S359/90

Abstract: PURPOSE: A micro optical switch and a fabricating method thereof are provided to rotate an optical reflector around two shafts by using a torsional hinge having an angel of 45 degrees to the magnetic field. CONSTITUTION: A micro optical switch includes an external frame(112), an internal frame(110), an optical reflector(108), a plurality of external magnetic bodies(102a,102b), an external torsional hinge(104), an internal torsional hinge(106), an external coil(116), and an internal coil(114). The external frame(112) includes an internal hole. The internal frame(110) is located within the internal hole of the external frame. The internal frame includes an internal hole. The optical reflector(108) is located within the internal hole of the internal frame. The external magnetic bodies(102a,102b) are installed at both sides of the external frame. The external torsional hinge(104) is used for connecting the external frame to the optical reflector. The internal torsional hinge(106) is used for connecting the internal frame to the optical reflector. The external coil(116) is formed within the internal frame. The internal coil(114) is formed within the optical reflector. The optical reflector and the internal frame are rotated around the internal torsional hinge and the external torsional hinge when the current is applied to the internal coil and the external coil.

Abstract translation: 目的：提供一种微型光开关及其制造方法，通过使用具有与磁场成45度的角度的扭转铰链将光学反射器围绕两个轴旋转。 构造：微型光学开关包括外部框架（112），内部框架（110），光学反射器（108），多个外部磁性体（102a，102b），外部扭转铰链（104），内部 扭转铰链（106），外部线圈（116）和内部线圈（114）。 外框（112）包括内孔。 内部框架（110）位于外部框架的内部孔内。 内部框架包括内部孔。 光学反射器（108）位于内部框架的内部孔内。 外部磁性体（102a，102b）安装在外部框架的两侧。 外部扭转铰链（104）用于将外部框架连接到光学反射器。 内部扭转铰链（106）用于将内部框架连接到光学反射器。 外部线圈（116）形成在内部框架内。 内部线圈（114）形成在光学反射器内。 当电流施加到内部线圈和外部线圈时，光学反射器和内部框架围绕内部扭转铰链和外部扭转铰链旋转。

公开(公告)号：KR1020040015497A

公开(公告)日：2004-02-19

申请号：KR1020020047763

申请日：2002-08-13

Applicant: 한국전자통신연구원

Inventor： 하두영 ,  류호준 ,  최창억 ,  전치훈 ,  김윤태

IPC: G02B26/08

CPC classification number: G02B6/3518 ,  G02B6/3556 ,  G02B6/357 ,  G02B6/3584 ,  G02B26/0841 ,  Y10S359/90

Abstract: PURPOSE: A scanning micromirror for use in an optical communication and a method for manufacturing the same are provided to have a large usable rotational angle and to have a rapid response speed due to a small air braking. CONSTITUTION: A scanning micromirror for use in an optical communication includes an outer frame(114), an inner frame(112), an optical reflection member(110), a plurality of first distortion recover members(122), a plurality of second distortion recover members(118), a first comb type electrostatic driving member(118) and a second comb type electrostatic driving member(116). The outer frame(114) has a hole inside. The inner frame(112) is placed inside of the hole of the outer frame(114) and has a hole inside thereof. The optical reflection member(110) is placed inside of the hole of the inner frame(112). The plurality of first distortion recover members(122) is connected between the inner wall of the outer frame(114) and the outer wall of the inner frame(112) for supporting the inner frame(112). The plurality of second distortion recover members(118) is connected between the inner wall of the inner frame(112) and the optical reflection member(110) for supporting the optical reflection member(110). The first comb type electrostatic driving member(118) gives an electrostatic driving force so as to rotate the inner frame(112) along the first distortion recover members(122) as an axis. And, the second comb type electrostatic driving member(116) gives an electrostatic driving force so as to rotate the optical reflection member(110) along the second distortion recover members(118) as an axis.

Abstract translation: 目的：提供用于光通信的扫描微镜及其制造方法，以具有大的可用旋转角度并且由于小的空气制动而具有快速的响应速度。 构成：用于光通信的扫描微镜包括外框架（114），内框架（112），光反射构件（110），多个第一失真恢复构件（122），多个第二失真 回收构件（118），第一梳状静电驱动构件（118）和第二梳状静电驱动构件（116）。 外框（114）内有孔。 内框架（112）被放置在外框架（114）的孔的内部并且在其内部具有孔。 光学反射构件（110）被放置在内框架（112）的孔的内部。 多个第一变形恢复构件（122）连接在外框架（114）的内壁和用于支撑内框架（112）的内框架（112）的外壁之间。 多个第二失真恢复构件（118）连接在内框架（112）的内壁和用于支撑光反射构件（110）的光反射构件（110）之间。 第一梳型静电驱动构件（118）产生静电驱动力，以沿着作为轴的第一失真恢复构件（122）旋转内框架（112）。 并且，第二梳状静电驱动构件（116）产生静电驱动力，以使光学反射构件（110）沿着作为轴的第二畸变恢复构件（118）旋转。

公开(公告)号：KR1020030066893A

公开(公告)日：2003-08-14

申请号：KR1020020006497

申请日：2002-02-05

Applicant: 한국전자통신연구원

Inventor： 정문연 ,  류호준 ,  이명래 ,  전치훈

IPC: G02B26/00

Abstract: PURPOSE: A method for improving reflectivity of a mirror side of an optical switch for optical cross connector is provided to prevent the attenuation of signal beam by improving the reflectivity of a side section of a mirror portion. CONSTITUTION: A mirror portion(62) having a scallop formed on a side section(62a) is provided. A high reflective layer(70) is deposited on the side section of the mirror portion in order to bury the scallop. The high reflective layer is recrystallized. In the process for providing the mirror portion, an SOI substrate is formed by depositing sequentially a buried layer and a silicon layer on a substrate. The silicon layer is etched by using a deep-RIE method and the mirror portion is formed thereby. The scallop is formed on the side section of the mirror portion by performing the deep-RIE process.

Abstract translation: 目的：提供一种用于提高光交叉连接器的光开关的反射镜的反射率的方法，以通过改善反射镜部分的侧部的反射率来防止信号光束的衰减。 构成：设置有形成在侧部（62a）上的扇贝的镜部（62）。 在反射镜部分的侧面上沉积高反射层（70）以便掩埋扇贝。 高反射层重结晶。 在提供反射镜部分的工艺中，通过在衬底上依次沉积掩埋层和硅层来形成SOI衬底。 通过使用深RIE法蚀刻硅层，由此形成镜部分。 通过执行深RIE处理，在镜部分的侧部形成扇贝。

公开(公告)号：KR1020020037088A

公开(公告)日：2002-05-18

申请号：KR1020000067065

申请日：2000-11-13

Applicant: 한국전자통신연구원

Inventor： 장원익 ,  최창억 ,  전치훈 ,  김윤태 ,  이명래 ,  김윤태

IPC: H01L21/205

CPC classification number: B81C1/00936 ,  H01L21/31111 ,  H01L21/31116

Abstract: PURPOSE: A method for floating a micro-structure for fabricating devices of MEMS(Micro Electro Mechanical System) without stiction is provided to float a micro-structure without stiction and residues by etching a sacrificial layer as an intermediate layer. CONSTITUTION: Anhydrous fluoride and bubbled alcohol vapor supply process is performed. An anhydrous fluoride supply portion, an alcohol supply portion, an anhydrous fluoride transfer path, and an alcohol transfer path are maintained under a temperature higher than a boiling point of an alcohol vapor. A vapor etch process is performed by controlling the temperature and a pressure to a vapor phase region of a phase equilibrium diagram of water. A sacrificial layer is removed from a lower portion of a micro-structure layer. In the vapor etch process, an etch pressure is maintained under 25 to 75 Torr and an etch temperature is maintained under 25 to 80 degrees centigrade.

Abstract translation: 目的：提供一种用于浮动用于制造MEMS（微机电系统）的器件的微结构而不具有静电的方法，以通过蚀刻作为中间层的牺牲层来浮动微结构而不产生粘结和残留。 构成：进行无水氟化物和鼓泡酒精蒸气供给过程。 无水氟化物供给部，醇供给部，无水氟化物传递路径和醇传递路径保持在高于醇蒸气的沸点的温度。 通过控制水的相平衡图的气相区域的温度和压力来进行蒸气蚀刻工艺。 从微结构层的下部去除牺牲层。 在蒸气蚀刻工艺中，蚀刻压力保持在25至75托和蚀刻温度保持在25至80摄氏度之间。

公开(公告)号：KR1020010053854A

公开(公告)日：2001-07-02

申请号：KR1019990054394

申请日：1999-12-02

Applicant: 한국전자통신연구원

Inventor： 최창억 ,  전치훈 ,  장원익 ,  김윤태

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81B2203/033 ,  B81C2201/0133 ,  B81C2201/0178 ,  B81C2203/0136

Abstract: PURPOSE: A method for forming a micro cavity structure hermetically sealed with a planar silicon oxide layer on a silicon substrate is provided with a simplified process and an improved planarity. CONSTITUTION: In the method, the silicon substrate(1) is selectively etched to form a plurality of narrow trenches in a region where a cavity(6) will be formed. The first silicon oxide layer is then formed in the trenches by the first thermal oxidation. Next, a portion of the first silicon oxide layer growing on a surface of the silicon substrate(1) is removed by etch. After that, a polysilicon layer is deposited on an entire resultant structure and then selectively etched to form a plurality of small apertures exposing the region of the cavity(6). Thereafter, the first silicon oxide layer is removed by wet etch through the apertures in the polysilicon layer, so that the cavity(6) is formed in the silicon substrate(1). Next, by the second thermal oxidation, the polysilicon layer is turned into the planar silicon oxide layer(2), while the apertures are clogged up by cubical expansion.

Abstract translation: 目的：提供一种用于形成在硅衬底上用平面氧化硅层密封的微腔结构的方法，其具有简化的工艺和改进的平面度。 构成：在该方法中，选择性地蚀刻硅衬底（1）以在将形成空腔（6）的区域中形成多个窄沟槽。 然后通过第一次热氧化在沟槽中形成第一氧化硅层。 接下来，通过蚀刻去除在硅衬底（1）的表面上生长的第一氧化硅层的一部分。 之后，在整个所得结构上沉积多晶硅层，然后选择性地蚀刻以形成暴露空腔（6）的区域的多个小孔。 此后，通过湿蚀刻通过多晶硅层中的孔去除第一氧化硅层，使得在硅衬底（1）中形成空腔（6）。 接下来，通过第二热氧化，多晶硅层变成平面氧化硅层（2），而孔被立方膨胀堵塞。