公开(公告)号：KR1020130048079A

公开(公告)日：2013-05-09

申请号：KR1020110113006

申请日：2011-11-01

Applicant: 한국전자통신연구원

Inventor： 구재본 ,  유인규 ,  양용석 ,  김민석

IPC: H01L51/56

CPC classification number: H01L51/5275 ,  H01L51/0097 ,  H01L51/5206 ,  H01L51/5212 ,  Y02E10/549 ,  Y02P70/521

Abstract: PURPOSE: A method for manufacturing a flexible electrode substrate is provided to improve productivity by using a printing method cheaper than a photo lithography process for forming a grid electrode and a micro lens array. CONSTITUTION: A micro lens array(20) is formed in the lower part of a film(10). A transparent electrode layer is formed in the upper part of the film facing the micro lens array. A transparency mold layer(30) having a trench is formed on the film. A grid electrode(40) is filled in the trench of the transparency mold layer. The grid electrode and the micro lens array are formed at both surfaces of the film.

Abstract translation: 目的：提供一种用于制造柔性电极基板的方法，通过使用比用于形成栅电极和微透镜阵列的光刻工艺便宜的印刷方法来提高生产率。 构成：在薄膜（10）的下部形成微透镜阵列（20）。 在面向微透镜阵列的膜的上部形成透明电极层。 在膜上形成具有沟槽的透明模制层（30）。 玻璃电极（40）填充在透明模具层的沟槽中。 栅极和微透镜阵列形成在膜的两个表面。

公开(公告)号：KR1020130025613A

公开(公告)日：2013-03-12

申请号：KR1020110089028

申请日：2011-09-02

Applicant: 한국전자통신연구원

Inventor： 구재본 ,  유인규 ,  양용석 ,  김태엽 ,  김민석

IPC: H01L51/56 ,  H01L51/50 ,  H05B33/26

CPC classification number: H01L51/5212 ,  H01L2227/32 ,  H01L2251/10 ,  H05B33/22

Abstract: PURPOSE: An organic light emitting diode and a manufacturing method thereof are provided to simplify a manufacturing process by omitting a bank layer forming process. CONSTITUTION: An insulation layer(150) is formed on a substrate. Metallic ink(160) is coated on the insulation layer. A sub electrode layer(170) with the insulation layer and the metallic ink is formed by thermally processing the substrate and injecting the metallic ink to the insulation layer. A first electrode, an organic light emitting layer, and a second electrode(400) are successively formed on the sub electrode layer.

Abstract translation: 目的：提供一种有机发光二极管及其制造方法，以通过省略堤层形成工艺来简化制造工艺。 构成：在基板上形成绝缘层（150）。 金属油墨（160）被涂覆在绝缘层上。 通过热处理基板并将金属墨水注入绝缘层，形成具有绝缘层和金属墨水的副电极层（170）。 第一电极，有机发光层和第二电极（400）依次形成在子电极层上。

公开(公告)号：KR101221871B1

公开(公告)日：2013-01-15

申请号：KR1020090120620

申请日：2009-12-07

Applicant: 한국전자통신연구원

Inventor： 구재본 ,  강승열 ,  유인규

IPC: H01L29/786

CPC classification number: H01L21/6835 ,  H01L21/84 ,  H01L24/83 ,  H01L24/93 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/2919 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/00

Abstract: 본 발명은 생산성을 향상시킬 수 있는 반도체 소자의 제조방법을 개시한다. 그의 방법은, 실리콘 산화막의 매몰 절연막 상에 활성 층이 형성된 SOI 기판에 실리콘 질화막 재질의 게이트 절연막을 형성하고, 상기 게이트 절연막 상에 게이트 전극을 형성하고, 상기 게이트 전극 양측의 상기 활성 층에 소스/드레인 영역을 형성한 후, 상기 게이트 전극 및 상기 소스/드레인 영역을 포함하는 박막트랜지스터의 주변에 형성된 상기 매몰 절연막을 노출시키고, 상기 박막트랜지스터를 상기 제 1 기판으로부터 분리하기 위해 상기 매몰 절연막을 식각하여 언더 컷을 형성하는 과정에서 사용되는 식각 용액으로부터 게이트 절연막이 보호될 수 있기 때문에 생산수율을 향상시킬 수 있다.
SOI(silicon on insulator), 게이트(gate), 기판, 매몰, 절연막

公开(公告)号：KR1020120059938A

公开(公告)日：2012-06-11

申请号：KR1020100121450

申请日：2010-12-01

Applicant: 한국전자통신연구원

Inventor： 양용석 ,  유인규 ,  구재본

IPC: G06K19/077

CPC classification number: G06K19/0723 ,  G06K17/0029 ,  G06K19/0725 ,  G06K19/07773 ,  G06K19/07788 ,  G08B13/2434

Abstract: PURPOSE: A wireless frequency identification tag is provided to change backscattering effects by changing impedance by detecting a target material. CONSTITUTION: A conductive layer(120) and a conductive line(140) are respectively formed on an insulation layer(110). An antenna(130) contacts to one end of the conductive line. A resistor contacts to other end of the conductive line. A first conductive plate(160) contacts to the conductive line. The first conductive plate constructs a first capacitor with the conductive layer and the insulation layer. A first sensing device is connected between the conductive line and the conductive layer.

Abstract translation: 目的：提供无线频率识别标签，通过检测目标材料改变阻抗来改变反向散射效应。 构成：在绝缘层（110）上分别形成导电层（120）和导线（140）。 天线（130）接触导电线的一端。 电阻器接触到导线的另一端。 第一导电板（160）接触导电线。 第一导电板构造具有导电层和绝缘层的第一电容器。 第一感测装置连接在导电线和导电层之间。

公开(公告)号：KR1020110095530A

公开(公告)日：2011-08-25

申请号：KR1020100015052

申请日：2010-02-19

Applicant: 한국전자통신연구원

Inventor： 김강대 ,  유인규 ,  구재본 ,  양용석 ,  강승열

IPC: H01L51/40 ,  H01L29/786

CPC classification number: H01L51/0545 ,  H01L51/105 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0516

Abstract: PURPOSE: An organic thin film transistor and a forming method thereof are provided to improve an electric property by forming a source electrode, a drain electrode, and an organic semiconductor layer with a self-alignment method. CONSTITUTION: A gate electrode(110) is formed on a substrate(100). A gate insulation layer(120) is formed on the substrate to cover the gate electrode. A recess region is formed on the upper side of the gate insulation layer. A source electrode(130S) and a drain electrode(130D) are formed in the recess region. An organic semiconductor layer(140) is formed between the source electrode and the drain electrode.

Abstract translation: 目的：提供一种有机薄膜晶体管及其形成方法，通过用自对准方法形成源电极，漏电极和有机半导体层来改善电性能。 构成：在基板（100）上形成栅电极（110）。 在基板上形成栅极绝缘层（120）以覆盖栅电极。 在栅极绝缘层的上侧形成凹部区域。 源极电极（130S）和漏电极（130D）形成在凹部区域中。 在源电极和漏电极之间形成有机半导体层（140）。

公开(公告)号：KR1020100106141A

公开(公告)日：2010-10-01

申请号：KR1020090024624

申请日：2009-03-23

Applicant: 한국전자통신연구원

Inventor： 노용영 ,  유인규 ,  구재본

IPC: H01L29/786 ,  B82Y30/00

CPC classification number: H01L51/0537 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/052

Abstract: PURPOSE: An organic thin film transistor and a method thereof are provided to improve the reliability of an organic thin film transistor by including an organic insulating layer having an excellent insulation property. CONSTITUTION: A source electrode(121) and a drain electrode(122) are formed on a substrate(110). An active layer(131) is formed on the substrate between the source electrode and the drain electrode. The gate electrode controls the active layer. An organic insulating layer(141) is formed between the active layer and the gate electrode. The organic insulating layer comprises nano particles, a hydrophilic polymers including a hydrophilic group, and a hydrophobic polymers including a hydrophobic group.

Abstract translation: 目的：提供一种有机薄膜晶体管及其方法，通过包括具有优异绝缘性的有机绝缘层来提高有机薄膜晶体管的可靠性。 构成：在基板（110）上形成源电极（121）和漏电极（122）。 在源电极和漏电极之间的衬底上形成有源层（131）。 栅电极控制有源层。 在有源层和栅电极之间形成有机绝缘层（141）。 有机绝缘层包括纳米颗粒，包括亲水基团的亲水性聚合物和包含疏水基团的疏水聚合物。

公开(公告)号：KR1020100051386A

公开(公告)日：2010-05-17

申请号：KR1020080110537

申请日：2008-11-07

Applicant: 한국전자통신연구원

Inventor： 안성덕 ,  유인규 ,  구재본 ,  조경익

IPC: G06F3/041 ,  G01K7/00 ,  G06F3/00

CPC classification number: G06F3/016 ,  G01K7/00 ,  G06F3/0412 ,  G06F3/0416

Abstract: PURPOSE: A device and a method for providing a tactile feedback are provided to provide a tactile feedback based on temperature change by response about a contact of a user, thereby enabling user to feel the temperature change. CONSTITUTION: A contact type input unit(110) receives a operation signal through contact of a user. A contact detecting unit(120) detects contact which is inputted with the contact type input. A heating controlling unit(130) controls temperature of the touch input as response temperature. The contact detecting unit detects location information of contact point which a user contacts in the contact type input unit. A temperature measuring unit(140) measures temperature of the contact type input unit. The temperature measuring unit controls the response temperature according to measured temperature at the temperature measuring unit.

Abstract translation: 目的：提供一种用于提供触觉反馈的装置和方法，以通过响应于用户的接触而提供基于温度变化的触觉反馈，从而使用户感受到温度变化。 构成：接触型输入单元（110）通过用户的接触接收操作信号。 接触检测单元（120）检测输入了接触型输入的接触。 加热控制单元（130）控制触摸输入的温度作为响应温度。 接触检测单元检测用户在接触型输入单元中接触的接触点的位置信息。 温度测量单元（140）测量接触型输入单元的温度。 温度测量单元根据温度测量单元上的测量温度控制响应温度。

公开(公告)号：KR1020090029373A

公开(公告)日：2009-03-23

申请号：KR1020070094554

申请日：2007-09-18

Applicant: 한국전자통신연구원

Inventor： 구재본 ,  강승열 ,  서경수

IPC: H01L29/786 ,  G02F1/136

CPC classification number: H01L27/3272 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3274 ,  H01L2251/5315 ,  H01L51/107

Abstract: A display device including organic thin film transistor is provided to improve the electrical characteristic by maintaining the threshold voltage constant. A display device including the organic thin film transistor comprises a substrate (100), an organic thin film transistor, a passivation layer(150), and a bank layer(170). The organic thin film transistor is arranged on the top of the substrate. The passivation layer is arranged on the top of the substrate in order to cover the organic thin film transistor. The bank layer is arranged on the passivation layer. The bank layer limits the shape of the pixel. The passivation layer or the bank layer has the material blocking the light which is income from the upper side of substrate on the organic thin film transistor.

Abstract translation: 提供了包括有机薄膜晶体管的显示装置，以通过维持阈值电压恒定来改善电特性。 包括有机薄膜晶体管的显示装置包括基板（100），有机薄膜晶体管，钝化层（150）和堤层（170）。 有机薄膜晶体管布置在基板的顶部。 为了覆盖有机薄膜晶体管，钝化层设置在基板的顶部。 堤层布置在钝化层上。 银行层限制像素的形状。 钝化层或堤层具有阻挡从有机薄膜晶体管上的衬底上侧收入的光的材料。

公开(公告)号：KR100816498B1

公开(公告)日：2008-03-24

申请号：KR1020060123901

申请日：2006-12-07

Applicant: 한국전자통신연구원

Inventor： 구재본 ,  서경수 ,  김성현

IPC: H01L27/04 ,  H01L21/335 ,  H01L27/28

CPC classification number: H01L27/283 ,  H01L51/0545

Abstract: An organic inverter including a surface-treated layer is provided to increase integration by enabling formation of a D-inverter while using the same wordlines. A load transistor(20) includes a gate electrode(22), a source electrode(24), a drain electrode(25) and a load insulation layer formed on the gate electrode wherein the source electrode is connected to the gate electrode. A driver transistor(10) includes a gate electrode(12), a source electrode(14), a drain electrode(15) and a driver insulation layer formed on the gate electrode, connected to the load transistor. A surface treatment layer(26) is formed in either one of the load insulation layer or the driver insulation layer by performing different surface treatments on the load insulation layer and the driver insulation layer, respectively. The source electrode, the drain electrode and the gate electrode can be made of a metal, a conductive oxide or a conductive polymer layer.

Abstract translation: 提供包括表面处理层的有机逆变器，以通过在使用相同的字线的同时形成D逆变器来增加集成度。 负载晶体管（20）包括栅电极（22），源电极（24），漏电极（25）和形成在栅电极上的负载绝缘层，其中源电极连接到栅电极。 驱动晶体管（10）包括连接到负载晶体管的栅电极（12），源电极（14），漏电极（15）和形成在栅电极上的驱动绝缘层。 通过对负载绝缘层和驱动绝缘层进行不同的表面处理，分别在负载绝缘层或驱动绝缘层中的任一个中形成表面处理层（26）。 源电极，漏电极和栅电极可以由金属，导电氧化物或导电聚合物层制成。

公开(公告)号：KR100790761B1

公开(公告)日：2008-01-03

申请号：KR1020060096247

申请日：2006-09-29

Applicant: 한국전자통신연구원

Inventor： 구재본 ,  김성현 ,  서경수 ,  구찬회 ,  임상철 ,  이정헌

IPC: H01L29/772

CPC classification number: H01L27/281 ,  H01L27/283

Abstract: An inverter is provided to improve a property of turn-on current and depletion by forming a stable D-inverter structure with organic semiconductor transistors. A driver transistor gate electrode(22) is formed on a plastic substrate(10). A first insulating layer(30) is formed to cover the driver transistor gate electrode. A driver transistor source electrode(42) is formed on the first insulating layer. A single layer(44) and a drain electrode of a load transistor (46) are used for forming a driver transistor drain electrode and a source electrode of the load transistor. Two organic semiconductor layers(72,74) are formed on the first insulating layer which is exposed between the source and drain electrodes. A second insulating layer(50) is formed to cover the source and drain electrodes and the organic semiconductor layers. A top gate electrode of the load transistor (62) is formed on the second insulating layer.

Abstract translation: 提供了一种通过用有机半导体晶体管形成稳定的D逆变器结构来提高导通电流和耗尽性能的逆变器。 驱动晶体管栅电极（22）形成在塑料基板（10）上。 形成第一绝缘层（30）以覆盖驱动晶体管栅电极。 驱动晶体管源电极（42）形成在第一绝缘层上。 负载晶体管（46）的单层（44）和漏电极用于形成负载晶体管的驱动晶体管漏电极和源电极。 在暴露在源极和漏极之间的第一绝缘层上形成两个有机半导体层（72,74）。 形成第二绝缘层（50）以覆盖源电极和漏电极以及有机半导体层。 负载晶体管（62）的顶栅电极形成在第二绝缘层上。