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公开(公告)号：KR101943077B1
公开(公告)日：2019-04-17
申请号：KR1020120144276
申请日：2012-12-12
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
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公开(公告)号：KR1020150138913A
公开(公告)日：2015-12-11
申请号：KR1020140065804
申请日：2014-05-30
Applicant: 한국전자통신연구원
CPC classification number: H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
Abstract: 본발명의실시예들에따른전자장치의제조방법은소자영역및 배선영역을포함하는캐리어기판을제공하는것; 캐리어기판상에희생층및 전자소자를차례로형성하는것; 희생층상에배선영역에서굴곡진표면을갖는제1탄성층을형성하는것; 배선영역의제1탄성층상에금속배선들을형성하는것; 제1탄성층상에금속배선들을덮는제2탄성층을형성하는것; 전자소자상의제2탄성층에함몰되며, 굴곡진표면을갖는고강성패턴을형성하는것; 제2탄성층및 고강성패턴상에제3탄성층을형성하는것; 및캐리어기판을분리하는것을포함한다.
Abstract translation: 根据本发明的实施例，提供了一种用于制造电子设备的方法。 该方法包括：制备包括元件区域和布线区域的载体衬底; 依次在载体基板上形成牺牲层和电子元件; 在所述牺牲层的所述布线区域中形成具有波纹状表面的第一弹性层; 在布线区域的第一弹性层上形成金属布线; 形成覆盖所述第一弹性层上的所述金属配线的第二弹性层; 在所述电子元件上方的所述第二弹性层的凹部中形成具有波纹状表面的高刚性图案; 在第二弹性层上形成第三弹性层和高刚性图案; 并分离载体衬底。
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公开(公告)号：KR1020150138512A
公开(公告)日：2015-12-10
申请号：KR1020140065202
申请日：2014-05-29
Applicant: 한국전자통신연구원
IPC: H01L27/32 , H01L29/786
CPC classification number: H01L27/1266 , H01L29/78603 , H01L51/0097
Abstract: 본발명은신축성전자소자의제조방법을개시한다. 그의방법은, 복수개의트렌치들을갖는몰드기판을제공하는단계와, 상기몰드기판상에상기트렌치들깊이에대응되는단차를갖는신축성기판을형성하는단계와, 상기몰드기판을제거하는단계와, 상기신축성기판상에박막트랜지스터를형성하는단계를포함한다. 상기신축성기판은, 상기몰드기판의상기트렌치들내에서형성되는하드영역과, 상기트렌치들사이의상기몰드기판상에형성되는유연영역을포함할수 있다.
Abstract translation: 公开了一种制造可拉伸电子装置的方法。 该方法包括：提供具有沟槽的模具基板的步骤; 形成具有与模具基板上的沟槽的深度对应的台阶的伸缩性电子基板的工序; 去除模具基板的步骤; 以及在所述伸缩性基板上形成薄膜晶体管的工序。 可拉伸基板可以包括形成在模具基板的沟槽中的硬区域和在沟槽之间形成在模具基板上的柔性区域。
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公开(公告)号：KR101004735B1
公开(公告)日：2011-01-04
申请号：KR1020080071203
申请日：2008-07-22
Applicant: 한국전자통신연구원
IPC: H01L29/786
Abstract: 본 발명은 유기 박막 트랜지스터, 이의 제조방법 및 이를 이용한 바이오센서에 관한 것으로, 본 발명에 따른 유기 박막 트랜지스터는 기판 상에, 게이트 전극, 게이트 절연막, 소스·드레인 전극 및 유기 반도체층을 포함하되, 상기 게이트 절연막과 유기 반도체층 사이에 졸-겔법을 통해 형성된 계면층을 더 포함하고, 상기 게이트 절연막은 유기 폴리머를 포함하며, 상기 계면층은 무기물을 포함한다. 본 발명에 따른 유기 박막 트랜지스터는 게이트 절연막과 유기 반도체층 사이에 계면층을 도입함으로써, 유기 절연막을 외부 환경으로부터 보호하며 유기 절연막과 유기 반도체층과의 접합 특성을 향상시켜 소자의 안정성을 확보할 수 있다. 또한, 본 발명에 따른 유기 박막 트랜지스터는 플라스틱 기판의 사용이 가능하기 때문에, 제조 비용이 저렴하여 일회용으로 주로 사용되는 바이오 센서에 적용되기 바람직하다.
유기 박막 트랜지스터, 계면층, 졸-겔법, 바이오센서-
公开(公告)号：KR100790761B1
公开(公告)日：2008-01-03
申请号：KR1020060096247
申请日：2006-09-29
Applicant: 한국전자통신연구원
IPC: H01L29/772
CPC classification number: H01L27/281 , H01L27/283
Abstract: An inverter is provided to improve a property of turn-on current and depletion by forming a stable D-inverter structure with organic semiconductor transistors. A driver transistor gate electrode(22) is formed on a plastic substrate(10). A first insulating layer(30) is formed to cover the driver transistor gate electrode. A driver transistor source electrode(42) is formed on the first insulating layer. A single layer(44) and a drain electrode of a load transistor (46) are used for forming a driver transistor drain electrode and a source electrode of the load transistor. Two organic semiconductor layers(72,74) are formed on the first insulating layer which is exposed between the source and drain electrodes. A second insulating layer(50) is formed to cover the source and drain electrodes and the organic semiconductor layers. A top gate electrode of the load transistor (62) is formed on the second insulating layer.
Abstract translation: 提供了一种通过用有机半导体晶体管形成稳定的D逆变器结构来提高导通电流和耗尽性能的逆变器。 驱动晶体管栅电极（22）形成在塑料基板（10）上。 形成第一绝缘层（30）以覆盖驱动晶体管栅电极。 驱动晶体管源电极（42）形成在第一绝缘层上。 负载晶体管（46）的单层（44）和漏电极用于形成负载晶体管的驱动晶体管漏电极和源电极。 在暴露在源极和漏极之间的第一绝缘层上形成两个有机半导体层（72,74）。 形成第二绝缘层（50）以覆盖源电极和漏电极以及有机半导体层。 负载晶体管（62）的顶栅电极形成在第二绝缘层上。
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Patent Agency Ranking
公开(公告)号：KR1020070059823A
公开(公告)日：2007-06-12
申请号：KR1020060027358
申请日：2006-03-27
Applicant: 한국전자통신연구원
IPC: G01L1/20
CPC classification number: G01L1/20 , B25J13/08 , G01R19/165
Abstract: A pressure sensor for an electronic skin and a fabrication method of a pressure sensor for an electronic skin are provided to read intensity of pressure, unable to obtain from a conventional pressure sensor using pressure-dependant conductive rubber. A pressure sensor for an electronic skin includes a pressure-dependant conductive rubber(1), electrodes(2,3), an elastic rubber(4), a voltmeter(10), an ammeter(20). The elastic rubber is a substance for making the pressure-dependant conductive rubber slowly react on the pressure. The elastic rubber disperses the pressure applied to the pressure-dependant conductive rubber. When an elastic coefficient of the pressure-dependant conductive rubber is k1, an elastic constant of the elastic rubber is k2, a total elongated length is x, and an elongate length of the pressure-dependant conductive rubber and an elongated length of a buffering rubber are respective x1 and x2, formulas such as x=x1+x2 and k1x1=k2x2 are established. A pressure representing a change of conductivity is applied by x1. Since actually elongated length x is dispersed into x1 and x2, change of resistance is dull.
Abstract translation: 提供一种用于电子皮肤的压力传感器和用于电子皮肤的压力传感器的制造方法以读取不能从使用压力导电橡胶的常规压力传感器获得的压力强度。 用于电子皮肤的压力传感器包括压力导电橡胶（1），电极（2,3），弹性橡胶（4），电压表（10），电流表（20）。 弹性橡胶是使压力依赖性导电橡胶在压力上缓慢反应的物质。 弹性橡胶分散施加于压力导电橡胶上的压力。 当压力导电橡胶的弹性系数为k1时，弹性橡胶的弹性常数为k2，总伸长长度为x，压力依赖导电橡胶的细长长度和缓冲橡胶的长度 分别为x1和x2，建立诸如x = x1 + x2和k1x1 = k2x2的公式。 表示电导率变化的压力由x1施加。 由于实际上细长的x分散在x1和x2中，电阻的变化是钝的。
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公开(公告)号：KR1020150061159A
公开(公告)日：2015-06-04
申请号：KR1020130144635
申请日：2013-11-26
Applicant: 한국전자통신연구원
IPC: H01L21/027
CPC classification number: H01L21/311 , G09F9/301 , H01L29/66477 , H01L51/0023 , H01L51/0055 , H01L51/0525 , H01L51/102 , H05K1/0283 , H05K1/0333 , H05K1/16 , H05K3/0017 , H05K3/007 , H05K2201/0133 , H05K2201/0162 , H05K2201/09036 , H05K2201/09045 , H05K2201/10166 , H05K2201/2009 , H05K2203/308 , H01L21/0273
Abstract: 본발명의일 실시예에따른전자회로의제조방법은기판을준비하는것, 상기기판상에고분자막을형성하는것, 상기고분자막을패터닝하여고분자패턴을형성하는것, 및상기고분자패턴상에전자소자를형성하는것을포함한다.
Abstract translation: 根据本发明实施例的电子电路的制造方法包括：制备基板; 在基板上形成高分子膜; 通过图案化高分子膜形成高分子图案; 并在高分子图案上形成电子器件。
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公开(公告)号：KR1020140060822A
公开(公告)日：2014-05-21
申请号：KR1020120127615
申请日：2012-11-12
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1262 , H01L27/1266 , H01L21/76838 , H01L27/124
Abstract: A method for manufacturing a stretchable thin film transistor is disclosed. The method includes a step of forming a mold substrate, a step of forming a stretchable insulator on the mold substrate, a step of forming a flat substrate on the stretchable insulator, a step of removing the mold substrate, a step of forming discontinuous and winkled lines on the stretchable insulator, a step of forming a thin film transistor which is connected between the lines, and a step of removing the flat substrate.
Abstract translation: 公开了一种制造可拉伸薄膜晶体管的方法。 该方法包括形成模具基板的步骤，在模制基板上形成可拉伸绝缘体的步骤，在可拉伸绝缘体上形成平坦基板的步骤，去除模制基板的步骤，形成不连续和闪烁的步骤 在可拉伸绝缘体上的线，形成连接在线之间的薄膜晶体管的步骤和去除平坦基板的步骤。
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公开(公告)号：KR1020140038161A
公开(公告)日：2014-03-28
申请号：KR1020120104549
申请日：2012-09-20
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78603 , H01L29/41733 , H01L29/66742 , H01L29/786 , H01L29/78636 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0076 , H01L51/0097 , H01L51/0541 , H01L51/0545 , H01L51/102 , H01L27/1266 , H01L29/42384
Abstract: A thin-film transistor according to one embodiment of the present invention includes: a source electrode and a drain electrode which are buried in a first flexible substrate; a semiconductor layer which is placed on the first flexible substrate to be placed between the source and the drain electrode; a gate insulating layer which completely covers the semiconductor layer; and a gate electrode which faces the semiconductor layer on the gate insulating layer.
Abstract translation: 根据本发明的一个实施例的薄膜晶体管包括：源电极和漏电极，其被埋在第一柔性基板中; 放置在第一柔性基板上以放置在源极和漏极之间的半导体层; 完全覆盖半导体层的栅极绝缘层; 以及与栅极绝缘层上的半导体层相对的栅电极。
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