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公开(公告)号：KR1020160096766A
公开(公告)日：2016-08-17
申请号：KR1020150018038
申请日：2015-02-05
Applicant: 한국전자통신연구원
CPC classification number: H05K1/0283 , H01B5/14 , G03F7/00 , H01B13/00
Abstract: 본발명은신축성투명전극에관한것으로, 굴곡진표면을갖는제 1 기판, 상기굴곡진표면을컨포말하게덮어, 굴곡진상부를갖는제 1 도전막, 상기제 1 도전막을컨포말하게덮어, 굴곡진상부를갖는제 2 도전막, 및상기제 2 도전막을덮는제 2 기판을포함하되, 상기제 1 도전막과상기제 2 도전막중 하나는금속막이고, 다른하나는그래핀막일수 있다.
Abstract translation: 本发明涉及一种可拉伸透明电极，包括：具有弯曲表面的第一基底; 通过保形地覆盖弯曲表面的具有弯曲顶部的第一导电膜; 具有弯曲顶部的第二导电膜，其通过第一导电膜保形地覆盖; 以及用于覆盖第二导电膜的第二基板，其中第一和第二导电膜中的一个可以是金属膜，另一个可以是石墨烯膜。
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公开(公告)号：KR1020150081640A
公开(公告)日：2015-07-15
申请号：KR1020140001325
申请日：2014-01-06
Applicant: 한국전자통신연구원 , 울산대학교 산학협력단
Abstract: 본발명은플렉서블전자소자의제조방법을제공한다. 이플렉서블전자소자의제조방법은입자를제공하는단계, 상기입자외부에탄소재료를증착하는단계, 상기탄소재료외부에전도성고분자를증착하는단계, 상기입자를제거하는단계, 및상기전도성고분자가증착된탄소재료를유연성기판상에증착하는단계를포함할수 있다.
Abstract translation: 本发明提供一种制造柔性电子元件的方法。 制造柔性电子元件的方法包括提供粒子的步骤; 将碳材料沉积在颗粒的外部的步骤; 将导电聚合物沉积在碳材料的外部的步骤; 去除颗粒的步骤; 以及将包含导电聚合物的碳材料沉积在柔性基板上的步骤。 因此，根据本发明，该方法能够制造具有3D皱纹结构并包含碳材料和导电聚合物的电极。
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公开(公告)号：KR1020150061159A
公开(公告)日：2015-06-04
申请号：KR1020130144635
申请日：2013-11-26
Applicant: 한국전자통신연구원
IPC: H01L21/027
CPC classification number: H01L21/311 , G09F9/301 , H01L29/66477 , H01L51/0023 , H01L51/0055 , H01L51/0525 , H01L51/102 , H05K1/0283 , H05K1/0333 , H05K1/16 , H05K3/0017 , H05K3/007 , H05K2201/0133 , H05K2201/0162 , H05K2201/09036 , H05K2201/09045 , H05K2201/10166 , H05K2201/2009 , H05K2203/308 , H01L21/0273
Abstract: 본발명의일 실시예에따른전자회로의제조방법은기판을준비하는것, 상기기판상에고분자막을형성하는것, 상기고분자막을패터닝하여고분자패턴을형성하는것, 및상기고분자패턴상에전자소자를형성하는것을포함한다.
Abstract translation: 根据本发明实施例的电子电路的制造方法包括：制备基板; 在基板上形成高分子膜; 通过图案化高分子膜形成高分子图案; 并在高分子图案上形成电子器件。
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公开(公告)号：KR1020140060822A
公开(公告)日：2014-05-21
申请号：KR1020120127615
申请日：2012-11-12
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1262 , H01L27/1266 , H01L21/76838 , H01L27/124
Abstract: A method for manufacturing a stretchable thin film transistor is disclosed. The method includes a step of forming a mold substrate, a step of forming a stretchable insulator on the mold substrate, a step of forming a flat substrate on the stretchable insulator, a step of removing the mold substrate, a step of forming discontinuous and winkled lines on the stretchable insulator, a step of forming a thin film transistor which is connected between the lines, and a step of removing the flat substrate.
Abstract translation: 公开了一种制造可拉伸薄膜晶体管的方法。 该方法包括形成模具基板的步骤，在模制基板上形成可拉伸绝缘体的步骤，在可拉伸绝缘体上形成平坦基板的步骤，去除模制基板的步骤，形成不连续和闪烁的步骤 在可拉伸绝缘体上的线，形成连接在线之间的薄膜晶体管的步骤和去除平坦基板的步骤。
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Patent Agency Ranking
公开(公告)号：KR1020140043656A
公开(公告)日：2014-04-10
申请号：KR1020130028125
申请日：2013-03-15
Applicant: 한국전자통신연구원
Abstract: The present invention relates to a radio communication antenna and a radio communication device including the same. The radio communication antenna of the present invention includes: first conductive wires extending in opposite directions with respect to a first direction on a substrate to form a dipole antenna; second conductive wires separated from the first conductive wires to be parallel with the first conductive wires; and stubs connected between the first conductive wires and the second conductive wires in a second direction intersecting with the first direction.
Abstract translation: 无线电通信天线和包括该无线电通信天线的无线电通信装置技术领域本发明涉及无线电通信天线和包括该无线电通信天线的无线电通信装置。 本发明的无线电通信天线包括：在基板上相对于第一方向相反方向延伸的第一导线，以形成偶极子天线; 第二导线与第一导线分离以与第一导线平行; 以及在与第一方向相交的第二方向上连接在第一导线与第二导线之间的短截线。
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公开(公告)号：KR1020140038161A
公开(公告)日：2014-03-28
申请号：KR1020120104549
申请日：2012-09-20
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78603 , H01L29/41733 , H01L29/66742 , H01L29/786 , H01L29/78636 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0076 , H01L51/0097 , H01L51/0541 , H01L51/0545 , H01L51/102 , H01L27/1266 , H01L29/42384
Abstract: A thin-film transistor according to one embodiment of the present invention includes: a source electrode and a drain electrode which are buried in a first flexible substrate; a semiconductor layer which is placed on the first flexible substrate to be placed between the source and the drain electrode; a gate insulating layer which completely covers the semiconductor layer; and a gate electrode which faces the semiconductor layer on the gate insulating layer.
Abstract translation: 根据本发明的一个实施例的薄膜晶体管包括：源电极和漏电极，其被埋在第一柔性基板中; 放置在第一柔性基板上以放置在源极和漏极之间的半导体层; 完全覆盖半导体层的栅极绝缘层; 以及与栅极绝缘层上的半导体层相对的栅电极。
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公开(公告)号：KR101215305B1
公开(公告)日：2012-12-26
申请号：KR1020090098243
申请日：2009-10-15
Applicant: 한국전자통신연구원
IPC: H01L29/786
CPC classification number: H01L29/78603 , H01L21/84
Abstract: 본발명은생산성을향상시킬수 있는반도체소자의제조방법을개시한다. 그의방법은, 제 1 기판상에활성층을형성하는단계; 상기활성층의상부면과제 2 기판을접합시키고, 상기제 1 기판으로부터상기활성층을분리하는단계; 상기제 2 기판에접합된상기활성층의소스/드레인영역들에대응되는도전성불순물영역들을형성하는단계; 상기활성층의하부면에제 3 기판에접합시키고상기제 2 기판을제거하는단계; 및상기제 3 기판에접합된상기활성층의상기도전성불순물영역들사이의상부에게이트전극을형성하고, 상기도전성불순물영역들상에소스/드레인전극들을형성하는단계를포함하여이루어진다.
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公开(公告)号：KR1020110124022A
公开(公告)日：2011-11-16
申请号：KR1020100043570
申请日：2010-05-10
Applicant: 한국전자통신연구원
IPC: H01L27/115 , H01L21/8247
CPC classification number: G11C13/0007 , G11C13/0009 , G11C13/0011 , G11C13/0014 , G11C13/0016 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/1608 , B82Y10/00
Abstract: PURPOSE: A resistive memory device and a manufacturing method thereof are provided to uniformly form the distribution of a conductivity nano particle by forming an electron channel layer by a swelling process and a thermal process. CONSTITUTION: A first electrode(5) is formed in the top of a substrate. An electron channel layer(7a) is arranged on the first electrode. The electron channel layer comprises an organic thin-flim layer(7) and a conductivity nano particle(9a). A second electrode(11) is formed on the electron channel layer. The upper side of the electron channel layer is projected to the second electrode side in the bottom side of the second electrode.
Abstract translation: 目的：提供电阻式存储器件及其制造方法，以通过膨胀工艺和热处理形成电子通道层来均匀地形成导电性纳米粒子的分布。 构成：第一电极（5）形成在衬底的顶部。 电子通道层（7a）布置在第一电极上。 电子通道层包括有机薄膜层（7）和导电性纳米颗粒（9a）。 第二电极（11）形成在电子通道层上。 电子通道层的上侧在第二电极的底侧突出到第二电极侧。
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公开(公告)号：KR1020110041184A
公开(公告)日：2011-04-21
申请号：KR1020090098243
申请日：2009-10-15
Applicant: 한국전자통신연구원
IPC: H01L29/786
CPC classification number: H01L29/78603 , H01L21/84 , H01L27/1266 , H01L21/76254
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to finish manufacturing a thin film transistor on a third plastic substrate, thereby increasing a production yield. CONSTITUTION: An active layer(14) is formed on a first substrate. A gate insulating layer(16) and a gate electrode(18) are formed on the active layer. The upper surface of the active layer is bonded with a second substrate. Conductive impurity areas(24) correspond to source/drain areas of the active layer bonded with the second substrate. A third substrate(30) is bonded with the lower surface of the active layer.
Abstract translation: 目的：提供一种制造半导体器件的方法，以在第三塑料基板上完成薄膜晶体管的制造，从而提高了产量。 构成：在第一衬底上形成有源层（14）。 在有源层上形成栅极绝缘层（16）和栅电极（18）。 有源层的上表面与第二衬底结合。 导电杂质区域（24）对应于与第二衬底结合的有源层的源极/漏极区域。 第三基板（30）与有源层的下表面接合。
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