公开(公告)号：US20180242465A1

公开(公告)日：2018-08-23

申请号：US15441146

申请日：2017-02-23

Applicant: Lawrence Livermore National Security, LLC

Inventor： Anna Hiszpanski ,  Thomas Yong-Jin Han ,  Carla Lim Watson ,  Timothy Dexter Yee

IPC: H05K3/46 ,  H01B1/22 ,  H01B1/24 ,  H05K1/02 ,  H01B13/00 ,  H05K3/02

CPC classification number: C09K13/00 ,  B81C1/00031 ,  B81C1/00126 ,  B81C1/00206 ,  B81C1/00484 ,  B81C1/00531 ,  B81C2201/0149 ,  B81C2201/0194 ,  B82Y40/00 ,  H01B1/22 ,  H01B1/24 ,  H01L31/022466 ,  H01L31/1884 ,  H05K1/0274 ,  H05K2201/0108 ,  H05K2201/026 ,  Y10S977/888

Abstract: According to one embodiment, a method for creating a metal nanowire mesh the method includes forming a first layer of block copolymer, causing the block copolymer to become aligned in approximately straight lines, infiltrating one phase of the block copolymer with a metal, and removing the block copolymer where the metal remains after the block copolymer is removed. Furthermore, the method includes forming a second layer of block copolymer, causing the block copolymer in the second layer to become ordered in approximately straight lines oriented at an angle from greater than 0 degrees to 90 degrees from a mean direction of longitudinal axes of the remaining metal, infiltrating one phase of the block copolymer in the second layer with a second metal, and removing the block copolymer in the second layer where the second metal remains above the metal after the block copolymer in the second layer is removed.

公开(公告)号：US20180040501A1

公开(公告)日：2018-02-08

申请号：US15601222

申请日：2017-05-22

Applicant: X-FAB Semiconductor Foundries AG

Inventor： Ralf LERNER ,  Oliver HALUCH

IPC: H01L21/683 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L21/6836 ,  B81C99/002 ,  B81C2201/0194 ,  H01L21/6835 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: The transfer of devices or device components from a carrier substrate to a further carrier substrate or to a plurality of further carrier substrates can be performed with little effort (few transfer steps) to the at least one further carrier substrate. The method comprises producing first devices on the first carrier substrate in a two-dimensional grid. It comprises defining positions on the second carrier substrate on the basis of the two-dimensional grid for at least some of the first devices. It comprises releasing a plurality of the first devices from the first carrier substrate while maintaining the two-dimensional grid. Finally, the plurality of first devices are applied to the second carrier substrate in the defined positions while maintaining the two-dimensional grid or a multiple thereof in at least one of the two directions.

公开(公告)号：US20170305739A1

公开(公告)日：2017-10-26

申请号：US15520618

申请日：2015-11-09

Applicant: TRONIC'S MICROSYSTEMS

Inventor： Joël COLLET

IPC: B81B3/00 ,  G01L9/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81C1/00182 ,  B81C1/00333 ,  B81C2201/0194 ,  B81C2203/051 ,  G01L9/0042

Abstract: An electromechanical device includes a stack formed of an insulating layer interposed between two solid layers, and a micromechanical structure of predetermined thickness suspended above a recess of predetermined depth, the recess and the micromechanical structure forming one of the two solid layers of the stack, and the insulating layer forming the bottom of the recess.

公开(公告)号：US09421772B2

公开(公告)日：2016-08-23

申请号：US14561519

申请日：2014-12-05

Applicant: Xerox Corporation

Inventor： Peter J. Nystrom ,  Gary D. Redding ,  Mark A. Cellura

IPC: B41J2/16 ,  B41J2/14 ,  B81C1/00

CPC classification number: B41J2/1621 ,  B41J2/14233 ,  B41J2/1433 ,  B41J2/161 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1639 ,  B81B2201/052 ,  B81C1/00158 ,  B81C1/00214 ,  B81C1/00523 ,  B81C2201/0194 ,  Y10T29/49126 ,  Y10T29/49401 ,  Y10T29/49798

Abstract: A method for forming a plurality of electrostatic actuator membranes for an electrostatically actuated ink jet printhead. The method can include forming a blanket actuator membrane layer on an etch stop layer, where the etch stop layer is interposed between the blanket membrane layer and a handle layer such as a semiconductor wafer. The blanket actuator membrane layer is patterned to form a plurality of actuator membranes. The plurality of actuator membranes is attached to a printhead drive assembly that includes circuitry for actuating the plurality of actuator membranes. Subsequently, the handle layer and etch stop layer are removed, thereby leaving the plurality of actuator membranes attached to the printhead drive assembly.

Abstract translation: 一种用于形成用于静电致动喷墨打印头的多个静电致动器膜的方法。 该方法可以包括在蚀刻停止层上形成覆盖层致动器膜层，其中蚀刻停止层插入在覆盖膜层和诸如半导体晶片的手柄层之间。 图案化毯子致动器膜层以形成多个致动器膜。 多个致动器膜附接到打印头驱动组件，打印头驱动组件包括用于致动多个致动器膜的电路。 随后，去除手柄层和蚀刻停止层，从而使多个致动器膜附接到打印头驱动组件。

公开(公告)号：US20160159091A1

公开(公告)日：2016-06-09

申请号：US14561519

申请日：2014-12-05

Applicant: Xerox Corporation

Inventor： Peter J. Nystrom ,  Gary D. Redding ,  Mark A. Cellura

IPC: B41J2/14 ,  B81C1/00 ,  B41J2/16

CPC classification number: B41J2/1621 ,  B41J2/14233 ,  B41J2/1433 ,  B41J2/161 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1639 ,  B81B2201/052 ,  B81C1/00158 ,  B81C1/00214 ,  B81C1/00523 ,  B81C2201/0194 ,  Y10T29/49126 ,  Y10T29/49401 ,  Y10T29/49798

Abstract: A method for forming a plurality of electrostatic actuator membranes for an electrostatically actuated ink jet printhead. The method can include forming a blanket actuator membrane layer on an etch stop layer, where the etch stop layer is interposed between the blanket membrane layer and a handle layer such as a semiconductor wafer. The blanket actuator membrane layer is patterned to form a plurality of actuator membranes. The plurality of actuator membranes is attached to a printhead drive assembly that includes circuitry for actuating the plurality of actuator membranes. Subsequently, the handle layer and etch stop layer are removed, thereby leaving the plurality of actuator membranes attached to the printhead drive assembly.

Abstract translation: 一种用于形成用于静电致动喷墨打印头的多个静电致动器膜的方法。 该方法可以包括在蚀刻停止层上形成覆盖层致动器膜层，其中蚀刻停止层插入在覆盖膜层和诸如半导体晶片的手柄层之间。 图案化毯子致动器膜层以形成多个致动器膜。 多个致动器膜附接到打印头驱动组件，打印头驱动组件包括用于致动多个致动器膜的电路。 随后，去除手柄层和蚀刻停止层，从而使多个致动器膜附接到打印头驱动组件。

公开(公告)号：US20150332710A1

公开(公告)日：2015-11-19

申请号：US14811303

申请日：2015-07-28

Applicant: Seagate Technology LLC

Inventor： Mark Anthony Gubbins ,  Marcus Benedict Mooney

IPC: G11B5/31

CPC classification number: G11B5/3153 ,  B81C1/00357 ,  B81C1/00476 ,  B81C1/0088 ,  B81C3/001 ,  B81C99/008 ,  B81C2201/0194 ,  C09K13/08 ,  C23F1/02 ,  C23F1/28 ,  C23F1/30 ,  C30B25/04 ,  G03F7/0002 ,  G11B5/3163 ,  G11B5/3173 ,  Y10T428/11 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1186 ,  Y10T428/1193

Abstract: Various methods for attaching a crystalline write pole onto an amorphous substrate and the resulting structures are described in detail herein. Further, the resulting structure may have a magnetic moment exceeding 2.4 Tesla. Still further, methods for depositing an epitaxial crystalline write pole on a crystalline seed or template material to ensure that the phase of the write pole is consistent with the high moment phase of the template material are also described in detail herein.

Abstract translation: 本文详细描述了用于将晶体写极连接到非晶衬底上的各种方法以及所得到的结构。 此外，所得到的结构可能具有超过2.4特斯拉的磁矩。 此外，本文还详细描述了在结晶晶种或模板材料上沉积外延晶体写极的方法，以确保写极的相位与模板材料的高时间相一致。

公开(公告)号：US20150311664A1

公开(公告)日：2015-10-29

申请号：US14541071

申请日：2014-11-13

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Vladimir BULOVIC ,  Jeffrey Hastings LANG ,  Apoorva MURARKA ,  Annie I-Jen WANG ,  Wendi CHANG

IPC: H01S3/106 ,  H01S3/0941 ,  H01S3/07 ,  G02B26/00 ,  H01S3/16 ,  H01S3/13 ,  H01S3/105 ,  H01S3/0933 ,  H01S3/08

CPC classification number: H01S3/1053 ,  B81B2201/02 ,  B81B2201/042 ,  B81C1/00158 ,  B81C1/00634 ,  B81C2201/0194 ,  G01L1/24 ,  G01L9/0005 ,  G01L9/0072 ,  G01L11/02 ,  G02B26/001 ,  H01L29/84 ,  H01S3/07 ,  H01S3/08059 ,  H01S3/0933 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/106 ,  H01S3/1305 ,  H01S3/16 ,  H01S3/1693

Abstract: The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.

Abstract translation: 本公开涉及在无溶剂环境中微机电系统（“MEMS”）的微接触印刷的方法和装置。 所公开的实施方案使得能够在聚对二甲苯层上形成复合膜并将复合结构转移到接收结构以形成由复合膜覆盖的一个或多个微腔。 聚对二甲苯膜的厚度可以在约100nm-2微米的范围内; 200nm-1微米，200-300nm，300-500nm，500nm至1微米和1-30微米。 接下来，在聚对二甲苯之上形成一个或多个二次层以产生复合膜。 复合膜可以具有约100nm至700nm至几微米的厚度。 可以测量复合膜的响应于外力的偏转，以提供无接触检测器。 相反，可以使用外部偏压来致动复合膜，以产生与施加的偏压相称的偏转。 所公开的实施例的应用包括可调激光器，麦克风，微型扬声器，远程激活的无接触压力传感器等。

公开(公告)号：US08912088B2

公开(公告)日：2014-12-16

申请号：US13879803

申请日：2011-11-18

Applicant: Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

Inventor： Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

IPC: H01L21/44 ,  H01L21/48 ,  H01L23/00 ,  B23K35/30 ,  B23K35/32 ,  B23K35/02 ,  B81C1/00 ,  B22F7/08 ,  B23K1/00

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2101/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 μm to 1.0 μm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300° C.

Abstract translation: 本发明提供一种用于将金属布线材料转印到转印接收对象的转印基板，所述转印基板包括基板，形成在所述基板上的至少一种金属布线材料和形成在所述基板和所述金属布线之间的下面的金属膜 材料，其中金属布线材料是通过烧结制备的模制品，例如纯度为99.9重量％以上，平均粒径为0.01μm〜1.0μm的金粉，下面的金属膜由金属 如金或合金。 转印基板即使在80〜300℃的转印接收对象的加热温度下也能够将金属配线材料转印到转印接收体。

公开(公告)号：US20140346622A1

公开(公告)日：2014-11-27

申请号：US14454370

申请日：2014-08-07

Applicant: SILANNA SEMICONDUCTOR U.S.A., INC.

Inventor： Michael A. Stuber

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/008 ,  B81B2203/0127 ,  B81C1/00269 ,  B81C2201/0194 ,  B81C2203/037 ,  H01L21/2007 ,  H01L21/76256 ,  H01L21/76898 ,  H01L21/7806 ,  H01L21/84 ,  H01L23/481 ,  H01L25/00 ,  H01L27/1203 ,  H01L29/7803 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2224/9202 ,  H01L2924/00

Abstract: A semiconductor wafer is formed with a first device layer having active devices. A handle wafer having a trap rich layer is bonded to a top surface of the semiconductor wafer. A second device layer having a MEMS device or acoustic filter device is formed on a bottom surface of the semiconductor wafer. The second device layer is formed either by monolithic fabrication processes or layer-transfer processes.

Abstract translation: 半导体晶片形成有具有有源器件的第一器件层。 具有富集阱的处理晶片被接合到半导体晶片的顶表面。 具有MEMS器件或声学滤波器器件的第二器件层形成在半导体晶片的底表面上。 第二器件层由单片制造工艺或层转移工艺形成。

公开(公告)号：US20140322894A1

公开(公告)日：2014-10-30

申请号：US14330210

申请日：2014-07-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuei-Sung Chang ,  Yi Heng Tsai

IPC: B81C1/00

CPC classification number: B81C1/00539 ,  B81C1/00269 ,  B81C1/00634 ,  B81C2201/0194 ,  B81C2203/0127 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68331 ,  H01L2221/68381

Abstract: An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.

Abstract translation: 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。