公开(公告)号：US5138191A

公开(公告)日：1992-08-11

申请号：US546753

申请日：1990-07-02

Applicant: Yoshihiko Mizushima ,  Toru Hirohata ,  Tsuneo Ihara ,  Minoru Niigaki ,  Kenichi Sugimoto ,  Koichiro Oba ,  Toshihiro Suzuki ,  Tomoko Suzuki

Inventor： Yoshihiko Mizushima ,  Toru Hirohata ,  Tsuneo Ihara ,  Minoru Niigaki ,  Kenichi Sugimoto ,  Koichiro Oba ,  Toshihiro Suzuki ,  Tomoko Suzuki

IPC: G01J1/02 ,  H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01J29/38 ,  H01J29/45 ,  H04N5/33

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.

Abstract translation: 在导电电极和半导体之间形成诸如肖特基结的结。 在导电电极与形成在半导体的与该结的相反侧的外侧发射侧电极之间施加偏置电压。 在照射时，光电子在导电电极内部发射到半导体中，通过半导体传输，并从半导体表面向外发射，半导体表面已被如此处理以减小表面势垒高度。 半导体是半绝缘的，或者在其中形成p-n结。

公开(公告)号：US5086248A

公开(公告)日：1992-02-04

申请号：US395586

申请日：1989-08-18

Applicant: Jerry R. Horton ,  G. William Tasker

Inventor： Jerry R. Horton ,  G. William Tasker

IPC: H01J9/12 ,  H01J43/04 ,  H01J43/24

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423 ,  H01J2201/3426

Abstract: Microchannel plates (MCPs) and channel electron multipliers (CEMs) having channels etched by a directionally applied flux of reactive particles are disclosed. The channels are activated with thin film dynodes. Various embodiments including monolithic and stacked devices are disclosed. Activation of the channels is achieved by various techniques including CVD, LPD and native growth by oxidation.

公开(公告)号：US4970392A

公开(公告)日：1990-11-13

申请号：US466497

申请日：1990-01-17

Applicant: Peter E. Oettinger ,  Timothy D. Howard ,  John J. Fronduto

Inventor： Peter E. Oettinger ,  Timothy D. Howard ,  John J. Fronduto

IPC: H01J1/34 ,  H01J9/12 ,  H01J37/073

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J37/073 ,  H01J2201/3423

Abstract: A new method and apparatus for providing a stable, temporally controllable high current density electron beam from a photocathode has been developed. A low level of cesium and, possibly a stabilizing gas, is supplied to the photoemitting surface while the electron beam is being generated, thereby replenishing cesium and possibly other ions lost from the emitting surface on a continual basis.

Abstract translation: 已经开发了用于从光电阴极提供稳定的，时间可控的高电流密度电子束的新方法和装置。 在产生电子束的同时，将低水平的铯和可能的稳定气体供应到光发射表面，从而补充铯和可能的其它离子从连续排出的表面。

公开(公告)号：US4829355A

公开(公告)日：1989-05-09

申请号：US942840

申请日：1986-12-17

Applicant: Bernard Munier ,  Paul de Groot ,  Claude Weisbuch ,  Guy Moiroud ,  Yves Henry

Inventor： Bernard Munier ,  Paul de Groot ,  Claude Weisbuch ,  Guy Moiroud ,  Yves Henry

IPC: H01J1/34

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode having internal amplification includes a first electrode adapted for receiving a first voltage, and for transmitting received photons. An absorption layer is disposed adjacent the first electrode and comprises a P-type semiconductor material having a forbidden band of sufficiently small width to cause photons received through said first electrode to be converted into electron-hole pairs. At least one ionization-induced electron multiplication layer is disposed adjacent the absorption layer. Each such multiplication layer comprises two layers of N-type semiconductor material having respectively two different compositions at an interface therebetween. The two different compositions at the interface cause the multiplication layer, when biased, to accelerate the electrons received from the absorption layer to a degree greater than the acceleration provided to the holes received from the absorption layer. A second electrode is disposed adjacent the multiplication layer and receives a second voltage to cause the photocathode to be biased. In addition, the second electrode transmits the accelerated electrons received from the multiplication layer. An emission layer is disposed adjacent the second electrode and comprises a material which produces negative electron affinity to cause the accelerated electrons received from the second electrode to be emitted into a vacuum.

Abstract translation: 具有内部放大的光电阴极包括适于接收第一电压的第一电极，以及用于发射所接收的光子。 吸收层设置在第一电极附近，并且包括具有足够小宽度的禁带的P型半导体材料，以使通过所述第一电极接收的光子转换成电子 - 空穴对。 在吸收层附近设置至少一个电离诱导电子倍增层。 每个这样的乘法层包括两层N型半导体材料，它们之间的界面具有两种不同的组成。 界面处的两种不同组成在被偏压时引起倍增层，以将从吸收层接收的电子加速至大于提供给从吸收层接收的空穴的加速度的程度。 第二电极设置在相乘层附近，并接收第二电压以使光电阴极偏置。 此外，第二电极传输从乘法层接收的加速电子。 发射层邻近第二电极设置并且包括产生负电子亲和力以使从第二电极接收的加速电子发射到真空中的材料。

公开(公告)号：US3982261B1

公开(公告)日：1987-04-07

申请号：US49648774

申请日：1974-08-12

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01L21/208 ,  H01L29/205 ,  H01L31/11 ,  H01L33/00 ,  H01S5/323

CPC classification number: H01J1/34 ,  H01J29/38 ,  H01J31/501 ,  H01J2201/3423 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/205 ,  H01L31/11 ,  H01L33/0025 ,  H01S5/323 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/12

公开(公告)号：US4616248A

公开(公告)日：1986-10-07

申请号：US735928

申请日：1985-05-20

Applicant: M. Asif Khan ,  Richard G. Schulze

Inventor： M. Asif Khan ,  Richard G. Schulze

IPC: H01L31/00 ,  H01J1/34 ,  H01L27/14

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A high efficiency UV responsive negative electron affinity photocathode with the long wavelength cutoff tunable over the wavelength from .about.200 to .about.300 nm based on Al.sub.x Ga.sub.1-x N. Negative electron affinity photocathodes for sharply enhanced photoemission yield can be formed by applying a layer of cesium to the surface of Al.sub.x Ga.sub.1-x N for which the Fermi energy level is appropriately positioned.

Abstract translation: 基于AlxGa1-xN，具有长波长截止频率的高效紫外响应负电子亲和光电阴极可调谐于波长从差分200到差分300nm。 可以通过在适当定位费米能级的Al x Ga 1-x N的表面上施加一层铯来形成用于急剧增强的光电子产率的负电子亲和光电阴极。

公开(公告)号：US4460831A

公开(公告)日：1984-07-17

申请号：US525514

申请日：1983-08-22

Applicant: Peter E. Oettinger ,  Chunghsin Lee

Inventor： Peter E. Oettinger ,  Chunghsin Lee

IPC: H01J9/12 ,  H01J37/073 ,  H01J37/317 ,  G21K5/04 ,  H01J40/06 ,  H01J40/16

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J9/12 ,  H01J2201/3423 ,  H01J2201/3426 ,  H01J2237/061 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: An electron beam generator particularly adapted for direct-write semiconductor lithography applications is disclosed which includes a photoemissive cathode, a modulable laser for illuminating the photoemissive cathode, and light optics to create an optical pattern on the cathode. The photoemissive cathode is composed of a light transmissive substrate onto which is deposited an optically semitransparent, electrically conductive film. This film in turn is coated with a thin layer of a photoemissive substance such as cesium antimonide so that the photoemissive cathode emits an intense and substantially monochromatic beam of electrons upon laser light illumination. The emitted electron beam is configured in accordance with the optical pattern created on the cathode, and in passing through successive electron optical devices is further shaped and sized for use, for example, in lithographically generating very large scale integrated (VLSI) circuits on semiconductors.

Abstract translation: 公开了一种特别适用于直写半导体光刻应用的电子束发生器，其包括光发射阴极，用于照射光发射阴极的可调激光器，以及用于在阴极上产生光学图案的光学光学器件。 光发射阴极由其上沉积有光学半透明导电膜的透光基板组成。 该薄膜依次涂覆有诸如锑化锑的光发射物质的薄层，使得在激光照明下，光发射阴极发射强烈且基本上单色的电子束。 发射的电子束根据在阴极上产生的光学图案来配置，并且通过连续的电子光学器件进一步成型和定尺寸以用于例如在半导体上平版印刷生成非常大规模的集成（VLSI）电路。

公开(公告)号：US4286373A

公开(公告)日：1981-09-01

申请号：US110513

申请日：1980-01-08

Applicant: William A. Gutierrez ,  Herbert L. Wilson ,  Edward M. Yee

Inventor： William A. Gutierrez ,  Herbert L. Wilson ,  Edward M. Yee

IPC: H01J1/34 ,  H01L31/18

CPC classification number: H01J9/233 ,  H01J1/34 ,  H01J2201/3423

Abstract: A method of making transmission mode glass-sealed negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes, utilizing germanium (Ge) as the seed crystal and multilayers of GaAs and gallium aluminum arsenide (GaAlAs) grown by metal alkyl-hydride vapor-phase epitaxy. The GaAs serves as the photoemitting layer and the GaAlAs serves as the passivating layer. The Ge, GaAs,GaAlAs combination is sealed to a glass support substrate which serves as the input window for the device. Finally, the Ge is removed and the GaAs is activated.

Abstract translation: 利用锗（Ge）作为晶种制造透射模式玻璃密封负电子亲合力（NEA）砷化镓（GaAs）光电阴极的方法，以及通过金属烷基氢化物气相生长的GaAs和砷化镓铝（GaAlAs） 相外延。 GaAs用作光发射层，GaAlAs用作钝化层。 Ge，GaAs，GaAlAs组合被密封到用作器件的输入窗口的玻璃支撑衬底上。 最后，除去Ge并激活GaAs。

公开(公告)号：US4060823A

公开(公告)日：1977-11-29

申请号：US675693

申请日：1976-04-09

Applicant: Jonathan Ross Howorth ,  Alan Jerome Goss ,  Peter James Pool

Inventor： Jonathan Ross Howorth ,  Alan Jerome Goss ,  Peter James Pool

IPC: H01J1/32 ,  H01J1/34 ,  H01L27/14

CPC classification number: H01J1/32 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron-emissive semiconductor device such as a photocathode or an electron multiplier, consists of separate regions of semiconductor material spaced apart by a barrier which reduces current flow between the regions. The barriers improve the performance of the device by preventing excess electron emission currents and reduce image spreading.

Abstract translation: 诸如光电阴极或电子倍增器的电子发射半导体器件由分隔开的屏障分隔的半导体材料区域组成，这些区域减少了区域之间的电流。 屏障通过防止过量的电子发射电流并减少图像扩散来提高器件的性能。

公开(公告)号：US3988497A

公开(公告)日：1976-10-26

申请号：US516474

申请日：1974-10-21

Applicant: Norio Asakura

Inventor： Norio Asakura

IPC: H01J1/34 ,  B32B3/10 ,  H01J31/38 ,  H01J39/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/153 ,  Y10S428/913 ,  Y10S438/964 ,  Y10T428/31

Abstract: The photoelectric surface of a photocathode made of a semiconductor single crystal is made minutely rough and, accordingly, lusterless, so that the transmissivity of a polarized light beam incident on the photoelectric surface is almost unaffected by the direction of electric field vector of the beam.

Abstract translation: 由半导体单晶制成的光电阴极的光电面被精细地粗糙化，因此无光泽，使得入射在光电表面上的偏振光束的透射率几乎不受光束的电场矢量的方向的影响。