Abstract:
An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. Electrically insulating seal element(s) engaging an outer surface of the arc chamber body are provided for impeding material from exiting the chamber interior openings of the arc chamber body. The seal element(s) have a ceramic body that includes an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall. The electrically insulating seal element comprises a Boron Nitride (BN) material.
Abstract:
An ion source includes a cathode to emit electrons, a cathode grid downstream of the cathode, a reflector electrode downstream of the cathode grid, reflector grid radially inward of the reflector electrode, and an extractor electrode downstream of the reflector electrode, the extractor electrode and cathode grid defining an ionization region therebetween. The cathode and the cathode grid have a first voltage difference such the electrons are accelerated through the cathode grid and into the ionization region on a trajectory toward the extractor electrode. The reflector grid and the extractor electrode have a second voltage difference less than the first voltage difference such that the electrons slow as they near the extractor electrode and are repelled on a trajectory toward the reflector electrode. The reflector electrode has a negative potential such that the electrons are repelled away from the reflector electrode and into the ionization region.
Abstract:
Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the arc chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction voltage applied to the arc chamber body is modulated between two voltages so as to clean both the extraction electrodes and the faceplate of the arc chamber body.
Abstract:
An exemplary ion source for creating a stream of ions has an aluminum alloy arc chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A temperature sensor monitors temperatures within the arc chamber and provides a signal related to sensed temperature. A controller monitors sensed temperature as measured by the sensor and adjusts the temperature to maintain the sensed temperature within a range.
Abstract:
A cathode in an indirectly heated cathode ion source is supported by at least one rod or pin. The cathode is preferably in the form of a disk, and the support rod is smaller in diameter than the disk to limit thermal conduction and radiation. In one embodiment, the cathode is supported by a single rod at or near its center. The support rod may be held by a spring-action clamp for simple and reliable clamping and unclamping. The disk shaped cathode and the support rod may be fabricated as a single piece. A filament that emits electrons thermionically may be disposed around the rod in close proximity to the cathode.
Abstract:
A cathode in an indirectly heated cathode ion source is supported by at least one rod or pin. The cathode is preferably in the form of a disk, and the support rod is smaller in diameter than the disk to limit thermal conduction and radiation. In one embodiment, the cathode is supported by a single rod at or near its center. The support rod may be held by a spring-action clamp for simple and reliable clamping and unclamping. The disk shaped cathode and the support rod may be fabricated as a single piece. A filament that emits electrons thermionically may be disposed around the rod in close proximity to the cathode.
Abstract:
Systems to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source (2) may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power application element (8) to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.
Abstract:
The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.
Abstract:
Techniques include receiving a design of an integrated computational element (ICE), the ICE design including specification of a substrate and a plurality of layers, their respective target thicknesses and complex refractive indices, complex refractive indices of adjacent layers being different from each other, and a notional ICE fabricated in accordance with the ICE design being related to a characteristic of a sample; forming at least some of the plurality of layers of the ICE in accordance with the ICE design; performing at least two different types of in-situ measurements; predicting, using results of the at least two different types of in situ measurements, performance of the ICE relative to the ICE design; and adjusting the forming of the layers remaining to be formed, at least in part, by updating the ICE design based on the predicted performance.