Abstract in simplified Chinese:本案揭露用于具有贯穿基体互连体及MEMS设备之电子系统的系统、方法及电脑进程产品。一互连体形成在具有一第一表面及一第二表面的基体中,此互连体包括:一块体区域;从该第一表面延伸至该第二表面的一通孔;延伸穿过该第一表面进入该基体且界定围绕该通孔之一封闭循环的一绝缘结构,其中该绝缘结构包含由至少一坚固部分隔开的一接缝部分;及从该绝缘结构朝向该第二表面延伸的一绝缘区域,该绝缘区域将该通孔与该块体区域分隔,其中该绝缘结构及该绝缘区域共同在该通孔与该块体区域之间提供电气隔离。
Abstract in simplified Chinese:本文中描述的技术使用包括可变形压力容器的压力传感器进行压力传感。压力容器是具有界定空隙的横截面的物体。可变形压力容器是具有至少一个弯曲部分的压力容器,该至少一个弯曲部分设以基于空腔中的空腔压力与压力容器中的容器压力之间的压力差而在结构上变形(例如弯曲、切变、伸长等),该压力容器之至少一部分被悬置在该空腔中。
Abstract in simplified Chinese:本发明提供一种制造聚合微流构造之方法,其中该微流构造之两个或两个以上组件(层)系以弱溶剂键合剂,尤其以乙或乙与醇之混合物固定地链接或层压。在一态样中,可用乙作为弱溶剂键合剂来封闭一制造于诸如聚苯乙烯、聚碳酸酯、丙烯酸或其它线性聚合物之非弹性体聚合物中或其上的微构造,以形成三维微流网络。该方法包括下述步骤:在一既定较低温度范围内,以该弱溶剂键合剂湿润该聚合基板组件之相对表面中之至少一者;使该等相对表面邻接;及在比该较低温度范围更高之温度下,将该键合剂热活化一段既定时间。亦可在热活化作用前,使该等相接触之聚合基板定位,及在热活化作用过程对其进行压缩。本发明亦揭示一种层压聚合微流构造。
Abstract:
Accelerometers are described herein that have RMS outputs. For instance, an example accelerometer may include a MEMS device and an ASIC. The MEMS device includes a structure having an attribute that changes in response to acceleration of an object. The ASIC determines acceleration of the object based at least in part on changes in the attribute. The ASIC includes analog circuitry, an ADC, and firmware. The analog circuitry measures the changes in the attribute and generates analog signals that represent the changes. The ADC converts the analog signals to digital signals. The firmware includes RMS firmware. The RMS firmware performs an RMS calculation on a representation of the digital signals to provide an RMS value that represents an amount of the acceleration of the object.
Abstract:
A method of processing a semiconductor substrate having a first conductivity type includes, in part, forming a first implant region of a second conductivity type in the semiconductor substrate where the first implant region is characterized by a first depth, forming a second implant region of the first conductivity type in the semiconductor substrate where the second implant region is characterized by a second depth smaller than the first depth, forming a porous layer within the semiconductor substrate where the porous layer is adjacent the first implant region, and growing an epitaxial layer on the semiconductor substrate thereby causing the porous layer to collapse and form a cavity.
Abstract:
A gyroscope includes a resonator, a transducer, and a comparator. The comparator is designed to receive an input signal from the transducer and compare the input signal with a reference signal to produce an output signal. Rising and falling edge transitions of the output signal are substantially synchronized with a motion of the resonator along a sense-axis of the transducer.
Abstract:
A system and method for estimating angular velocity are provided. The system and method use an accelerometer and magnetometer to estimate an angular velocity in place of a gyroscope in 9-axis sensor fusion to estimate angular orientation. The final angular velocity estimate is constructed from two partially independent angular velocity estimates, one using only magnetometer measurements and the other using only accelerometer measurements. The unobservable portion of each partial angular velocity estimate is provided by a projection from a third complete estimate that uses both accelerometer and magnetometer data.
Abstract:
A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first, second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.