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公开(公告)号：KR101633362B1
公开(公告)日：2016-06-28
申请号：KR1020100004285
申请日：2010-01-18
Applicant: 삼성전자주식회사
IPC: B25J9/16 , B25J13/08 , B62D57/032 , G05D1/08
CPC classification number: B62D57/032
Abstract: 관절토크의서보제어에기반하여안정적인보행을구현하는인간형로봇과그 보행제어방법을개시한다. 인간형로봇은센서의측정값으로관절위치궤적보상값과관절토크보상값을각각계산하고, 계산된보상값들을이용하여관절위치궤적과관절토크를보상하고, 보상된관절토크에따라관절에설치된모터를구동시킬수 있다.
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公开(公告)号：KR1020150144066A
公开(公告)日：2015-12-24
申请号：KR1020140072708
申请日：2014-06-16
Applicant: 삼성전자주식회사
IPC: G03B17/56
CPC classification number: G03B17/561 , G03B17/04
Abstract: 카메라의배면과결합하는몸체부와, 외부부착물에부착되도록, 일측은상기몸체부에결합하여고정단을형성하고, 타측은상기몸체부에고정되지않은자유단을형성하는클립부및, 상기몸체부가바닥면에서지지되도록, 상기클립부의하부에힌지결합되어회전가능하게구비되는스탠드부를포함하여구성되는스탠드기능을구비하는카메라클립에관한것이고, 그이외에다양한실시예가가능하다.
Abstract translation: 本发明涉及具有支架功能的相机夹。 相机夹包括：耦合到相机后部的主体部分; 夹子部分，其中一侧联接到主体部分以形成固定端，并且另一侧形成未固定到主体部分的自由端，以便附接到外部附件; 以及支架部分，铰接到夹子部分的下部以旋转，使得主体部分被支撑在底部表面上。 还有其他可能的实施例。
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公开(公告)号：KR1020140024632A
公开(公告)日：2014-03-03
申请号：KR1020120090849
申请日：2012-08-20
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/7926 , H01L27/11582 , H01L29/66833 , H01L21/76205 , H01L21/823487
Abstract: A three dimensional semiconductor memory device and a method for manufacturing the same are provided. The three dimensional semiconductor memory device includes an electrode structure where insulating patterns extended in the first direction on a substrate and horizontal electrodes are alternately stacked repeatedly; a semiconductor pillar connected to the substrate through the electrode structure; a charge storage layer between the semiconductor pillar and the electrode structure; a tunnel insulating layer between the charge storage layer and the semiconductor pillar; and a blocking insulating layer between the charge storage layer and the electrode structure. Each horizontal electrode includes a metal stopper formed between a gate electrode and the blocking insulating layer and the gate electrode.
Abstract translation: 提供三维半导体存储器件及其制造方法。 三维半导体存储器件包括电极结构，其中绝缘图案沿基板上的第一方向延伸，水平电极重复地交替堆叠; 通过所述电极结构与所述基板连接的半导体柱; 半导体柱和电极结构之间的电荷存储层; 电荷存储层和半导体柱之间的隧道绝缘层; 以及电荷存储层和电极结构之间的阻挡绝缘层。 每个水平电极包括形成在栅电极和阻挡绝缘层之间的金属阻挡层和栅电极。
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公开(公告)号：KR1020130101369A
公开(公告)日：2013-09-13
申请号：KR1020120022466
申请日：2012-03-05
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L29/792 , H01L27/11582 , H01L29/4234 , H01L29/513 , H01L29/66833 , H01L29/7926 , H01L27/0688
Abstract: PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to increase the degree of integration by arranging unit memory cells in a vertical direction. CONSTITUTION: A first interlayer dielectric and a second interlayer dielectric are alternately laminated. A gate pattern is arranged between the first interlayer dielectric and the second interlayer dielectric. A channel pattern (115) passes through the first interlayer dielectric and the second interlayer dielectric. A trapping layer (122) is arranged between the gate pattern and the channel pattern. A charge diffusion barrier layer (150) is arranged between the channel pattern and the second interlayer dielectric.
Abstract translation: 目的：提供非易失性存储器件及其制造方法，以通过在垂直方向上布置单元存储单元来增加积分度。 构成：交替层叠第一层间电介质和第二层间电介质。 栅极图案布置在第一层间电介质和第二层间电介质之间。 通道图案（115）穿过第一层间电介质和第二层间电介质。 捕获层（122）布置在栅极图案和沟道图案之间。 电荷扩散阻挡层（150）布置在沟道图案和第二层间电介质之间。
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