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公开(公告)号：KR1020090081939A
公开(公告)日：2009-07-29
申请号：KR1020080008125
申请日：2008-01-25
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: G11B17/228 , H01L27/14625 , H01L27/14629 , H01L27/14643
Abstract: An image sensor is provided to reduce cross talk and increase the sensitivity of the image sensor by reducing the amount of light flow out from the photoelectric conversion element. An image sensor comprises a substrate(100), a reflector(102a), a photoelectric conversion element, and a hole basin(104a). The reflector is located on a surface of the substrate. The photoelectric conversion element is located on a surface of the reflector. The hole basin is positioned in the lower region of the photoelectric conversion element. The hole basin is positioned around the reflector. The hole basin is the area in which the high density P type impurity ion is injected.
Abstract translation: 提供图像传感器以减少串扰，并通过减少从光电转换元件流出的光量来增加图像传感器的灵敏度。 图像传感器包括基板（100），反射器（102a），光电转换元件和孔槽（104a）。 反射器位于基板的表面上。 光电转换元件位于反射体的表面上。 孔盆位于光电转换元件的下部区域。 孔盆围绕反射器定位。 孔盆是注入高密度P型杂质离子的区域。
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公开(公告)号：KR1020090004820A
公开(公告)日：2009-01-12
申请号：KR1020080119697
申请日：2008-11-28
Applicant: 삼성전자주식회사
CPC classification number: H01L27/14609 , H01L29/0847 , H01L29/1083 , H01L29/78
Abstract: An imaging device capable of preventing leakage current of a pixel is provided to prevent leakage current flowing into the pixel when all pixels connected to a column line are not selected. An imaging device(1000) comprises an active pixel sensor array(100), a leakage current suppression part(200), a reciprocity double sampling circuit(300), an analog-to-digital converting circuit(ADC)(400) and a raw driver(500). A plurality of pixels is connected to a column line. The leakage current suppression part comprises a leak current cut-off circuit. The leak current cut-off circuit blocks leakage current of the plurality of pixels. If all of the plural pixels are not selected, the leak current cut-off circuit provides leakage current suppression voltage to the column line. The leak current cut-off circuit is connected to the column line. The leak current cut-off circuit comprises an MOS transistor connected between a power terminal and the column line.
Abstract translation: 提供能够防止像素的漏电流的成像装置，以防止当连接到列线的所有像素未被选择时流入像素的漏电流。 成像装置（1000）包括有源像素传感器阵列（100），漏电流抑制部分（200），互易双采样电路（300），模数转换电路（ADC）（400）和 原始驾驶员（500）。 多个像素连接到列线。 泄漏电流抑制部分包括泄漏电流切断电路。 泄漏电流切断电路阻止多个像素的泄漏电流。 如果未选择所有多个像素，则泄漏电流切断电路向列线提供泄漏电流抑制电压。 泄漏电流切断电路连接到列线。 泄漏电流切断电路包括连接在电源端子和列线之间的MOS晶体管。
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公开(公告)号：KR1020080107676A
公开(公告)日：2008-12-11
申请号：KR1020070055728
申请日：2007-06-07
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/103 , H04N5/3597 , H04N5/361 , H04N5/3745
Abstract: An image sensor which receives the light to the backplane is provided to improve the photo-charge transmission rate to the floating diffusion node from the photo diode. An image sensor comprises the semiconductor substrate(P), the floating diffusion node(FDN), the photo diode(PD), the transfer channel region(CH_T), and the photo transmission gate line. The floating diffusion node is formed on the first side(FRONT) of the semiconductor substrate. The photo diode is formed within the semiconductor substrate. The photo diode produces the photo-charges corresponding to the light which is income to the second side of the semiconductor substrate. The transfer channel region transmits the photo-charge generated in the photo diode to the floating diffusion node in response to the transmission control signal. The photo transmission gate line is arranged on the domain corresponded to the photo diode and transfer channel region on the first side of the semiconductor substrate.
Abstract translation: 提供将光接收到背板的图像传感器，以提高从光电二极管到浮动扩散节点的光电荷传输速率。 图像传感器包括半导体衬底（P），浮动扩散节点（FDN），光电二极管（PD），传输沟道区域（CH_T）和光传输门极线。 浮动扩散节点形成在半导体衬底的第一侧（FRONT）上。 光电二极管形成在半导体衬底内。 光电二极管产生对应于对半导体衬底的第二侧收入的光的光电荷。 传输通道区域响应于传输控制信号将在光电二极管中产生的光电荷传输到浮动扩散节点。 光传输栅极线布置在对应于半导体衬底的第一侧上的光电二极管和传输沟道区域的域上。
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公开(公告)号：KR100818724B1
公开(公告)日：2008-04-01
申请号：KR1020060067198
申请日：2006-07-19
Applicant: 삼성전자주식회사
IPC: H04N5/374
CPC classification number: H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14641 , H01L27/14656 , H04N5/347 , H04N5/37457
Abstract: CMOS 이미지 센서 회로가 개시된다.상기 CMOS 이미지 센서는 2개의 단위 픽셀들로 이루어진 다수의 단위 블록들을 구비한다. 상기 단위 픽셀들은 플로팅 디퓨전, 리셋 트랜지스터, 드라이브 트랜지스터, 및 셀렉션 트랜지스터를 공유한다. 상기 단위 픽셀들 각각은 육각형 구조의 포토 다이오드, 상기 포토 다이오드로부터 발생되는 광전하의 상기 플로팅 디퓨전으로의 전송을 제어하는 트랜스퍼 트랜지스터, 및 상기 포토 다이오드로 입사되는 빛을 필터링하기 위한 컬러 필터를 더 구비한다. 상기 단위 픽셀들 각각의 필터는 동일한 색을 필터링하는 컬러 필터이다. 상기 CMOS 이미지 센서 회로는 디지털 카메라, 모바일 기기, 컴퓨터용 카메라 등에 구비될 수 있다.
육각형 포토 다이오드, 허니콤, 공유 플로팅 디퓨전-
公开(公告)号：KR100801057B1
公开(公告)日：2008-02-04
申请号：KR1020060067022
申请日：2006-07-18
Applicant: 삼성전자주식회사
CPC classification number: H04N9/045 , H04N2209/046
Abstract: 컬러 보정 블럭을 구비하는 CMOS이미지 센서 및 그 이미지 센싱 방법이 개시된다. 상기 CMOS이미지 센서는 로우 디코더, 픽셀 어레이, CDS 블럭, 아날로그 디지털 변환기, 및 컬럭 보정 블럭을 구비하며, 상기 컬럭 보정 블럭은 상기 아날로그 디지털 변환기에서 출력된 이미지 데이터, 컬러 보정 파라미터들, 및 줌 배율의 정보를 가지는 신호에 기초하여 CMOS이미지 센서의 출력 이미지의 Gr과 Gb차이를 보정하여 이미지의 쉐이딩 현상 및 색조 불량을 개선할 수 있다.
이미지 센서, 컬러 보정-
Patent Agency Ranking
公开(公告)号：KR1020080007937A
公开(公告)日：2008-01-23
申请号：KR1020060067198
申请日：2006-07-19
Applicant: 삼성전자주식회사
IPC: H04N5/374
CPC classification number: H01L27/14645 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14641 , H01L27/14656 , H04N5/347 , H04N5/37457
Abstract: A CMOS(Complementary Metal Oxide Semiconductor) image sensor and an image sensing method using the same are provided to improve resolution by improving a degree of integration through floating diffusion for sharing a circuit between unit pixels, support a pixel summation mode, and implement overflow drain which is generated at high illumination. A CMOS(Complementary Metal Oxide Semiconductor) image sensor include plural unit blocks configured with two unit pixels. Each of the unit blocks comprises the followings. Two photo diodes(130,140) have a hexagon structure. The two unit pixels share floating diffusion(135). First and second transfer transistors(131,141) are installed between the photo diodes and the floating diffusion. A reset transistor(134) is connected with the floating diffusion. A drive transistor is connected with the floating diffusion and a gate. A selection transistor is serially connected with the drive transistor.
Abstract translation: 提供CMOS（互补金属氧化物半导体）图像传感器和使用其的图像感测方法，以通过提高通过浮动扩散的积分程度来提高分辨率，以在单元像素之间共享电路，支持像素求和模式并实现溢出漏极 其在高照度下产生。 CMOS（互补金属氧化物半导体）图像传感器包括配置有两个单位像素的多个单位块。 每个单元块包括以下内容。 两个光电二极管（130,140）具有六边形结构。 两个单位像素共享浮动扩散（135）。 第一和第二转移晶体管（131,141）安装在光电二极管和浮动扩散之间。 复位晶体管（134）与浮动扩散连接。 驱动晶体管与浮动扩散和栅极连接。 选择晶体管与驱动晶体管串联连接。
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公开(公告)号：KR100734272B1
公开(公告)日：2007-07-02
申请号：KR1020050079949
申请日：2005-08-30
Applicant: 삼성전자주식회사
Inventor： 안정착
IPC: H04N5/378
Abstract: A CMOS(Complementary Metal-Oxide Semiconductor) image sensor for reducing size of an optical black area is provided to reduce whole area of the CMOS image sensor by reducing the size of the optical black area. An active pixel array(110) includes a plurality of active pixel rows each of which includes a plurality of active pixels. An optical black area(120) includes one optical black pixel row which includes one or more optical black pixels. A video signal processing part(140) removes offsets of video signals outputted from the active pixel rows based on an optical black signal outputted from the optical black pixel row, and generates corrected video signals. The video signal processing part uses the optical black signal in order to remove the offsets of the video signals outputted from the active pixel rows.
Abstract translation: 用于减少光学黑区域的尺寸的CMOS（互补金属氧化物半导体）图像传感器提供了一种通过降低光学黑色区域的大小，以减少CMOS图像传感器的整个区域。 有源像素阵列（110）包括多个有源像素行，每个有源像素行包括多个有源像素。 光学黑色区域（120）包括一个光学黑色像素行，其包括一个或多个光学黑色像素。 视频信号处理部分（140）基于从光学黑色像素行输出的光学黑信号来去除从有源像素行输出的视频信号的偏移，并且生成校正的视频信号。 视频信号处理部分使用光学黑信号以消除从有效像素行输出的视频信号的偏移。
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108.发明公开
公开(公告)号：KR1020070067561A
公开(公告)日：2007-06-28
申请号：KR1020050129130
申请日：2005-12-24
Applicant: 삼성전자주식회사
CPC classification number: H04N5/3745 , G11C27/00 , H04N5/3597 , H04N5/374 , H04N5/37452
Abstract: A pixel circuit having a boosting capacitor, a method for driving the pixel circuit, and an image sensor including the pixel circuit are provided to improve the rate of photocharge transfer from a photodiode to a floating diffusion node by boosting the voltage of the floating diffusion node to a voltage higher than a power supply voltage by using the boosting capacitor. A pixel circuit includes a photodiode(PD), a transfer transistor(TTr), a reset transistor(RTr), a signal output unit(302), and a boosting capacitor(Cb). The photodiode generates photocharges corresponding to incident light. The transfer transistor transfers the photocharges to a floating diffusion node(FDN) in response to a transfer control signal. The reset transistor transfers a power supply voltage to the floating diffusion node in response to a reset control signal. The signal output unit outputs a voltage signal corresponding to the voltage of the floating diffusion node in response to a select control signal. The boosting capacitor is connected between the gate of the transfer transistor and the floating diffusion node.
Abstract translation: 提供具有升压电容器的像素电路，用于驱动像素电路的方法和包括像素电路的图像传感器，以通过升高浮动扩散节点的电压来提高从光电二极管到浮动扩散节点的光电荷传递速率 通过使用升压电容器而达到高于电源电压的电压。 像素电路包括光电二极管（PD），传输晶体管（TTr），复位晶体管（RTr），信号输出单元（302）和升压电容器（Cb）。 光电二极管产生对应于入射光的光电荷。 转移晶体管响应于传输控制信号将光电荷转移到浮动扩散节点（FDN）。 复位晶体管响应于复位控制信号将电源电压传送到浮动扩散节点。 信号输出单元响应于选择控制信号输出与浮动扩散节点的电压对应的电压信号。 升压电容器连接在传输晶体管的栅极和浮动扩散节点之间。
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109.发明公开
公开(公告)号：KR1020070027957A
公开(公告)日：2007-03-12
申请号：KR1020050079950
申请日：2005-08-30
Applicant: 삼성전자주식회사
Inventor： 안정착
CPC classification number: H04N5/357 , H04N5/37452
Abstract: A CMOS(Complementary Metal Oxide Semiconductor) image sensor removing flicker noise and a method of removing flicker noise in a CMOS image sensor are provided to improve picture quality of the CMOS image sensor by removing the flicker noise. A CMOS image sensor(300) includes a pixel unit(310) and a signal processor(320). The pixel unit includes a plurality of pixel lines respectively having a plurality of pixels and sequentially exposes the pixel lines to external light for a predetermined time to sequentially generate initial image signals of the pixel lines. The signal processor calculates the average value of each initial image signal and an initial image signal prior to the initial image signal by a half period of the external light and outputs the average value as a corrected image signal of the pixel line outputting the initial image signal when the predetermined time is shorter than the half period of the external light. When the predetermined time is longer than the half period of the external light, the signal processor calculates the average value of each initial image signal and an initial image signal prior to the initial image signal by one and a half period and outputs the average value as a corrected image signal of the pixel line outputting the initial image signal.
Abstract translation: 提供去除闪烁噪声的CMOS（互补金属氧化物半导体）图像传感器和消除CMOS图像传感器中的闪烁噪声的方法，以通过消除闪烁噪声来改善CMOS图像传感器的图像质量。 CMOS图像传感器（300）包括像素单元（310）和信号处理器（320）。 像素单元包括分别具有多个像素的多个像素线，并且将像素线顺序地暴露于外部光预定时间以顺序地生成像素线的初始图像信号。 信号处理器将初始图像信号之前的每个初始图像信号和初始图像信号的平均值计算出外部光的半个周期，并将平均值作为输出初始图像信号的像素线的校正图像信号 当预定时间短于外部光的半周期时。 当预定时间长于外部光的半周期时，信号处理器将初始图像信号和初始图像信号之前的初始图像信号的平均值计算一个半周期，并将平均值作为 输出初始图像信号的像素线的校正图像信号。
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公开(公告)号：KR100659503B1
公开(公告)日：2006-12-20
申请号：KR1020040058504
申请日：2004-07-27
Applicant: 삼성전자주식회사
Inventor： 안정착
IPC: H01L27/146 , H01L31/10
CPC classification number: H01L27/14621 , H01L27/14603 , H01L27/14627 , H01L27/14645
Abstract: 이미지 센서의 수광부를 확장하여 크로스토그(crosstalk) 현상 또는 차광 현상을 감소시키고 광을 효과적으로 집중시킴으로써 광감도를 높일 수 있는 이미지 센서가 개시된다. 광축상에 렌즈, 복수의 마이크로 렌즈들이 소정의 패턴으로 형성되는 마이크로 렌즈 어레이, 소정의 패턴으로 형성되는 컬러필터 어레이, 소정의 패턴으로 형성되는 메탈 어레이 및 복수의 수광소자들이 소정의 패턴으로 형성되는 수광소자 어레이 순으로 배열되는 이미지 센서에 있어서, 마이크로 렌즈 어레이는 중심에 위치한 마이크로 렌즈로부터 멀어질수록 입사각에 반비례하여 간격이 좁아지고, 수광소자 어레이는 중심에 위치한 수광소자로부터 멀어질수록 입사각에 비례하여 간격이 넓어지는 것을 특징으로 한다.
Abstract translation: 降低交叉togeu（串扰）的图像传感器中出现，或者如果通过延伸的图像传感器的光接收部分和由聚光效率的光以提高光灵敏度遮光现象中公开。 在光轴上的透镜，多个微透镜是一个微透镜阵列，形成在图案的预定的颜色滤光器阵列中，形成以预定图案的预定图案的金属阵列和多个形成在形成为规定图案的光接收元件的 受光元件阵列中，所述图像传感器是独特的安排，微透镜阵列是远离所述微透镜中反比于入射角的间隔的中心变窄，所述光接收元件阵列更远离接收元件位于相对于入射角的中心在光 这样间隔就扩大了。
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