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公开(公告)号：KR100682829B1
公开(公告)日：2007-02-15
申请号：KR1020050041607
申请日：2005-05-18
Applicant: 삼성전자주식회사
IPC: H04N5/355 , H04N5/3745
CPC classification number: H01L27/14609 , H04N5/3559 , H04N5/3597 , H04N5/3745 , H04N5/37457
Abstract: 씨모스 이미지 센서의 단위 화소는 입사된 광에 응답하여 전하를 발생시키는 광전변환소자, 전송 제어신호에 따라 광전변환소자에 집적된 전하를 플로팅 확산 노드로 전송하는 전송 트랜지스터, 전송 트랜지스터의 게이트 및 플로팅 확산 노드 사이에 삽입된 부스팅 커패시터 및 선택 신호에 응답하여 플로팅 확산 노드의 전위를 전달하는 신호 전달회로를 포함한다. 따라서, 광전하의 전송 효율 및 플로팅 확산 노드의 다이나믹 레인지를 향상시킬 수 있다.
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公开(公告)号：KR1020060080291A
公开(公告)日：2006-07-10
申请号：KR1020050000565
申请日：2005-01-04
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H01L31/10
CPC classification number: H01L27/1461 , H01L21/26586 , H01L27/14689
Abstract: 이미지 센서 제조방법을 제공한다. 이 방법은 기판에 행 및 열로 배열된 복수개의 포토다이오드 영역을 정의하는 단계와, 각각의 포토다이오드 영역에 트랜스퍼 게이트를 형성하되, 일 행의 트랜스퍼 게이트는 인접한 다른 행의 트랜스퍼 게이트와 대칭적으로 배치하는 단계와, 2n번째(n은 양의 정수) 행들의 포토 다이오드 영역에 불순물을 주입하여 포토 다이오드를 형성하는 단계와, 2n-1번째(n은 양의 정수) 행들의 포토 다이오드 영역에 불순물을 주입하여 포토 다이오드를 형성하는 단계를 포함한다.
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公开(公告)号：KR1020130091553A
公开(公告)日：2013-08-19
申请号：KR1020120012930
申请日：2012-02-08
Applicant: 삼성전자주식회사
CPC classification number: H04N13/271 , G01S7/4863 , H01L27/14656 , H04N5/37452 , H04N5/369 , H04N5/2625 , H04N13/20
Abstract: PURPOSE: A three-dimensional image sensor and a mobile device including the same are provided to improve a demodulation contrast by emitting surplus photocharges without the need to increase the frequency of a master clock signal which is a base of transmission control signals, thereby reducing depth error. CONSTITUTION: Each depth pixel (100) includes a Photo Detector (PD) (101), Floating Diffusion (FD) regions (104, 105), Transfer Transistors (TX) (102, 103), Reset Transistors (RX) (106, 107), and an overflow transistor (110) which emits surplus photocharges, which are generated outside the unit time determined by the photo detector, to a second power supply terminal if a drive gating signal is applied. If a photocharge transmission section to a first FD region and a photocharge transmission section to a second FD region do not overlap, the logic unit (120) of a readout circuit applies a transmission gating signal to each transfer transistor. If the photocharge transmission sections overlap, the logic unit applies a drive gate signal to the overflow transistor.
Abstract translation: 目的：提供三维图像传感器和包括该三维图像传感器的移动设备，以通过发射多余的光电荷来提高解调对比度，而不需要增加作为传输控制信号的基础的主时钟信号的频率，从而减少深度 错误。 构成：每个深度像素（100）包括光检测器（PD）（101），浮动扩散（FD）区域（104,105），传输晶体管（TX）（102,103），复位晶体管（RX） 107），以及溢出晶体管（110），如果施加了驱动门控信号，则在由光电检测器确定的单位时间之外产生的剩余光电荷发射到第二电源端子。 如果到第一FD区域的光电荷传输部分和到第二FD区域的光电荷传输部分不重叠，则读出电路的逻辑单元（120）向每个传输晶体管施加传输门控信号。 如果光电荷传输部分重叠，则逻辑单元向溢出晶体管施加驱动栅极信号。
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公开(公告)号：KR1020050061311A
公开(公告)日：2005-06-22
申请号：KR1020040103635
申请日：2004-12-09
Applicant: 삼성전자주식회사
IPC: H04N5/341 , H01L27/148
CPC classification number: H01L27/14812 , H01L27/14614 , H01L27/14643
Abstract: PROBLEM TO BE SOLVED: To provide a signal charge converter for a charge transfer element. SOLUTION: The signal converter includes a first driver FET of a first stage that receives a signal charge and converts the signal charge to a voltage. Subsequent driver FETs are connected to an output of the first driver FET, and gate insulating films of subsequent drivers include reduced thicknesses. The subsequent driver FETs constitute a second stage or a third stage. The reduced thicknesses of the gate insulating films of the subsequent driver FETs increase a voltage gain AV total without decreasing charge transfer efficiency, and raises the entire sensitivity of the signal converter. COPYRIGHT: (C)2005,JPO&NCIPI
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Patent Agency Ranking
公开(公告)号：KR1020140006465A
公开(公告)日：2014-01-16
申请号：KR1020120073439
申请日：2012-07-05
Applicant: 삼성전자주식회사
IPC: H04N5/341 , H01L27/146
CPC classification number: H04N5/335 , H04N5/2226 , H04N5/2258 , H04N5/23245 , H04N5/3696 , H04N5/376 , H04N5/378
Abstract: An operation method of an image sensor chip including a depth sensor pixel and a motion sensor pixel, which can detect motion of an object, comprises the steps of: activating one of the depth sensor pixel or the motion sensor pixel according to a mode selecting signal; and processing a pixel signal output from the activated one.
Abstract translation: 包括可以检测物体运动的深度传感器像素和运动传感器像素的图像传感器芯片的操作方法包括以下步骤：根据模式选择信号激活深度传感器像素或运动传感器像素之一 ; 以及处理从被激活的像素信号输出的像素信号。
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公开(公告)号：KR1020140002366A
公开(公告)日：2014-01-08
申请号：KR1020120070908
申请日：2012-06-29
Applicant: 삼성전자주식회사
IPC: G01S17/08
Abstract: An operation method for a depth measurement device is disclosed. The operation method for the depth measurement device according to an embodiment of the present invention includes producing a virtual mask signal, having a pulse interval corresponding to when a shutter operates, to reset the sensing power; and masking an optical detection control signal during the pulse interval using the mask signal. The present method can prevent the decline of a reset voltage level caused by the coupling between the optical detection control signal and a reset signal throughout the masking, and by preventing the decline of the reset voltage level, sensitivity towards sensing diffusion can be developed. Furthermore, the depth measurement device according to an embodiment of the present invention can develop light sensitivity by producing the mask signals.
Abstract translation: 公开了一种深度测量装置的操作方法。 根据本发明的实施例的深度测量装置的操作方法包括产生具有对应于快门操作的脉冲间隔的虚拟掩模信号以重置感测功率; 以及使用掩模信号在脉冲间隔期间遮蔽光检测控制信号。 本方法可以防止在整个屏蔽期间由光学检测控制信号和复位信号之间的耦合引起的复位电压电平的下降，并且通过防止复位电压电平的下降，可以产生对感测扩散的灵敏度。 此外，根据本发明的实施例的深度测量装置可以通过产生掩模信号来产生光灵敏度。
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公开(公告)号：KR1020140111488A
公开(公告)日：2014-09-19
申请号：KR1020130025702
申请日：2013-03-11
Applicant: 삼성전자주식회사
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14641
Abstract: A depth pixel of a three-dimensional image sensor includes a light detection region, first and second photo gates, and first and second floating diffusion regions. The light detection region collects electric charges based on light reflected by an object. An internal electric field is formed for moving the collected charges in first and second directions. The first photo gate is formed on the upper part of the light detection region, and is activated in response to a first photo control signal. The first floating diffusion region accumulates first electric charges drifted in the first direction if the first photo gate is activated. The second photo gate is formed on the upper part of the photo detection region apart from the first photo gate, and is activated in response to the first photo control signal. The second floating diffusion region accumulates second electric charges drifted in the second direction if the second photo gate is activated.
Abstract translation: 三维图像传感器的深度像素包括光检测区域，第一和第二光栅以及第一和第二浮动扩散区域。 光检测区域基于被物体反射的光来收集电荷。 形成用于在第一和第二方向上移动所收集的电荷的内部电场。 第一光栅形成在光检测区域的上部，并且响应于第一光控制信号被激活。 如果第一光栅被激活，第一浮动扩散区积累在第一方向上漂移的第一电荷。 第二光栅形成在除了第一光栅之外的光检测区域的上部，并且响应于第一光控制信号被激活。 如果第二光栅被激活，则第二浮动扩散区积累沿第二方向漂移的第二电荷。
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公开(公告)号：KR1020060127618A
公开(公告)日：2006-12-13
申请号：KR1020050048823
申请日：2005-06-08
Applicant: 삼성전자주식회사
IPC: H04N5/3745
CPC classification number: H04N5/3741
Abstract: A pixel circuit having interconnections/transistors shared in an image sensor and a driving method thereof are provided to interconnect or operate signals/transistors requested in unit pixels through common contacts with neighboring pixels, thereby optimizing the entire interconnection of an APS array. A pixel circuit having interconnections/transistors shared in an image sensor includes a reset transistor(RG) operating according to a reset control signal, and a source-follower transistor(SF) operating according to a signal transmitted to an FD(Floating Diffusion) node. A reset signal based on the signal transmitted to the FD node via the reset transistor and an image signal based on a signal transmitted from a PD(Photodiode) to the FD node are outputted via the source-follower transistor. The reset transistor is connected between a node of the shared first signal(ROV) supplied through the same contact(SH1) as a reset transistor of a neighboring pixel and the FD node. The source-follower is supplied with the shared second signal(SFV) supplied through the same contact(SH2) as a source-follower transistor of another neighboring pixel and outputs a signal proportional to the signal transmitted to the FD node.
Abstract translation: 具有在图像传感器中共享的互连/晶体管的像素电路及其驱动方法被提供以通过与相邻像素的公共接触来将单位像素中请求的信号/晶体管互连或操作，从而优化APS阵列的整个互连。 具有在图像传感器中共享的互连/晶体管的像素电路包括根据复位控制信号操作的复位晶体管（RG），以及根据发送到FD（浮动扩散）节点的信号来操作的源极跟随器晶体管 。 基于通过复位晶体管发送到FD节点的信号的复位信号和基于从PD（光电二极管）发送到FD节点的信号的图像信号经由源极跟随器晶体管输出。 复位晶体管连接在通过与相邻像素的复位晶体管相同的触点（SH1）提供的共享第一信号（ROV）的节点和FD节点之间。 源跟随器被提供有通过与另一相邻像素的源极 - 跟随器晶体管相同的触点（SH2）提供的共享第二信号（SFV），并输出与发送到FD节点的信号成比例的信号。
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