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公开(公告)号：KR1020100095942A
公开(公告)日：2010-09-01
申请号：KR1020090015001
申请日：2009-02-23
Applicant: 한국과학기술연구원
CPC classification number: A61L31/022 , A61F2/82 , A61L27/08 , A61L27/28 , A61L31/084
Abstract: PURPOSE: A stent, a surface coating method of the same, and a surface coating device of the same are provided, which can extend lifetime of a stent coated with a carbon thin film by improving interfacial adhesion. CONSTITUTION: A surface coating device of a stent comprises: a chamber(210) equipped with an internal space; a substrate(220) for settling a stent, which is installed inside the chamber; an ion beam irradiation unit(230) which irradiates an ion beam in order to coat a diamond-like carbon film layer on the surface of the stent; and a sputtering unit(240) for vaporizing the buffer layer on the surface of the stent before the coating of the diamond-like carbon film layer.
Abstract translation: 目的：提供一种支架，其表面涂覆方法及其表面涂布装置，其可通过改善界面粘合而延长涂覆有碳薄膜的支架的使用寿命。 构成：支架的表面涂覆装置包括：配备有内部空间的室（210）; 用于沉降支架的基底（220），其安装在所述腔室内; 离子束照射单元，其照射离子束以在所述支架的表面上涂覆类金刚石碳膜层; 以及用于在涂覆金刚石状碳膜层之前使支架表面上的缓冲层蒸发的溅射单元（240）。
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公开(公告)号：KR1020090060846A
公开(公告)日：2009-06-15
申请号：KR1020070127795
申请日：2007-12-10
Applicant: 한국과학기술연구원
Abstract: A diamond-like carbon film with a nano-undulated surface is provided to reduce the humidity dependence of friction coefficient due to the characteristics of the nano-undulated surface suppressing tribo-chemical reaction in the transition layer. A diamond-like carbon film has a nano-undulated surface which is formed on a nano dot pattern of a substrate, with RMS surface roughness of 5nm to 50nm. The nano dot pattern is made of metal selected in the group consisting of nickel, cobalt, chrome, iron, zinc, copper, gold, silver, molybdenum, palladium and platinum, and its diameter is 20nm to 800nm. The diamond-like carbon film with the nano-undulated surface is formed by RF-PACVD(Radio Frequency-Plasma Assisted Chemical Vapor Deposition) using methane gas as reaction gas.
Abstract translation: 提供具有纳米波纹表面的类金刚石碳膜，以降低由于纳米波纹表面的特性而导致的摩擦系数的湿度依赖性，从而抑制过渡层中的摩擦化学反应。 类金刚石碳膜具有形成在基板的纳米点图案上的纳米波状表面，RMS表面粗糙度为5nm至50nm。 纳米点图案由选自镍，钴，铬，铁，锌，铜，金，银，钼，钯和铂的金属制成，直径为20nm至800nm。 具有纳米波状表面的类金刚石碳膜通过使用甲烷气体作为反应气体的RF-PACVD（射频等离子体辅助化学气相沉积）形成。
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公开(公告)号：KR100851891B1
公开(公告)日：2008-08-13
申请号：KR1020060128886
申请日：2006-12-15
Applicant: 한국과학기술연구원
IPC: H01L27/105
Abstract: 본 발명은 비자성 또는 자성 반도체에 특정한 스핀 방향을 가진 전자를 주입할 때 높은 스핀주입 효율을 나타낼 수 있는 다층막 구조 및 그 제조방법에 관한 것으로, 보다 상세하게는 전이금속 질화물 중 전도성 질화물인 TiN, TaN, NbN, ZrN 등을 강자성 물질과 반도체 물질의 사이층으로 사용한 다층막 구조 및 그 제조방법에 관한 것이다. 본 발명에 의한 다층막 구조는 강자성 물질/반도체의 접합에서 나타나는 쇼트키 장벽(Schottky Barrier), 전도도 불일치(Conductivity Mismatch), 그리고 계면 형상의 불균일성을 나타내지 않으며, 높은 스핀주입 효율을 달성한다. 따라서 본 발명에서 얻어진 다층막 구조를 이용하면 종래의 강자성 물질/반도체 접합에 비해 더 높은 스핀주입효율을 가진 소자를 제조할 수 있는 장점이 있다.
스핀주입, 전도성 질화물, 사이층, 다층막 구조, 스핀전자소자, 스핀 반도체, 반금속-
公开(公告)号：KR1020080055492A
公开(公告)日：2008-06-19
申请号：KR1020060128886
申请日：2006-12-15
Applicant: 한국과학기술연구원
IPC: H01L27/105
Abstract: A structure of a multiple layer is provided to obtain a high spin injection efficiency when electrons having a specific spin direction are injected into a non-magnetic or magnetic semiconductor by using a conductive nitride as a spacer layer. A spacer layer(2) is formed on a semiconductor layer, made of a conductive nitride. A spin injection electrode layer(1) is formed on the conductive nitride spacer layer, made of a ferroelectric material. Transition metal can be doped into the conductive nitride spacer layer. The conductive nitride can be made of one selected from a group of TiN, TaN, NbN and ZrN.
Abstract translation: 提供多层结构以通过使用导电氮化物作为间隔层将具有特定自旋方向的电子注入到非磁性或磁性半导体中以获得高的自旋注入效率。 在由导电氮化物制成的半导体层上形成间隔层（2）。 在由铁电材料制成的导电氮化物间隔层上形成自旋注入电极层（1）。 可以将过渡金属掺杂到导电氮化物间隔层中。 导电氮化物可以由选自TiN，TaN，NbN和ZrN的一种制成。
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Patent Agency Ranking
公开(公告)号：KR1020040107536A
公开(公告)日：2004-12-21
申请号：KR1020030038361
申请日：2003-06-13
Applicant: 한국과학기술연구원
CPC classification number: C23C14/0611 , B82Y30/00 , C23C14/205 , C23C14/221 , C23C14/35 , C23C14/5806
Abstract: PURPOSE: To provide a method for fabricating a rigid carbon nanocomposite thin film comprising a nano sized graphite phase material in a diamond-like amorphous carbon thin film by depositing carbon after forming nano-dots of reactive materials, a rigid carbon nanocomposite thin film fabricated by the method, and a method for controlling size of graphitized portion by controlling size of metal dots. CONSTITUTION: In a rigid carbon thin film comprising a diamond-like amorphous carbon thin film having high electrical resistance and low electrical conductivity, and a graphite phase portion having low electrical resistance and high electrical conductivity formed to a nano-size formed in the diamond-like amorphous carbon thin film, the rigid carbon nanocomposite thin film is characterized in that it is consisted of the same element and has partially different electrical conductivity.
Abstract translation: 目的：提供一种通过在形成纳米点的反应性材料之后沉积碳，在金刚石状无定形碳薄膜中制备纳米尺寸的石墨相材料的刚性碳纳米复合材料薄膜的方法，由刚性碳纳米复合薄膜制成的刚性碳纳米复合材料薄膜 该方法以及通过控制金属点的尺寸来控制石墨化部分的尺寸的方法。 构成：在包含具有高电阻和低导电性的类金刚石状无定形碳薄膜的硬质碳薄膜中，以及形成为在金刚石 - 氧化物中形成的纳米尺寸的具有低电阻和高导电性的石墨相部分， 如无定形碳薄膜，刚性碳纳米复合薄膜的特征在于它由相同的元件组成并具有部分不同的导电性。
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公开(公告)号：KR1020040045170A
公开(公告)日：2004-06-01
申请号：KR1020020073209
申请日：2002-11-22
Applicant: 한국과학기술연구원 , (주)제이 앤 엘 테크
IPC: H01L21/56
Abstract: PURPOSE: An EMC(Epoxy Molding Compound) mold for encapsulating hard carbon film coated semiconductor and a coating method thereof are provided to be capable of improving the productivity of a molding process. CONSTITUTION: A tool steel material EMC mold for encapsulating semiconductor is made of a mold and a hard carbon film coated on the surface of the mold. At this time, the hard carbon film contains a predetermined hydrogen content in the range of 1 at.%, or less. Preferably, the hard carbon film has a thickness of 0.5-5 μm. Preferably, the hard carbon film has the predetermined rate for sp¬3 hybridized bond in the range of 60-90 %.
Abstract translation: 目的：提供一种用于包封硬质碳膜涂覆的半导体的EMC（环氧模塑复合物）模具及其涂覆方法，以能够提高模制过程的生产率。 构成：工具钢材料用于封装半导体的EMC模具由模具和涂覆在模具表面上的硬碳膜制成。 此时，硬碳膜含有1at。％以下的规定氢含量。 优选地，硬碳膜的厚度为0.5-5μm。 优选地，硬碳膜具有在60-90％范围内的sp3杂交键的预定速率。
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公开(公告)号：KR100136632B1
公开(公告)日：1998-05-15
申请号：KR1019940018059
申请日：1994-07-26
Applicant: 한국과학기술연구원
IPC: G11B5/53
CPC classification number: C23C16/509 , C23C16/26 , C23C16/458 , C23C16/5093 , G11B15/1808 , G11B15/61 , G11B15/62 , G11B23/502
Abstract: 본 발명은 고 경도 다이아몬드상 경질 카본 필름인 제 1코팅층 위에 저경도의 다이아몬드상 경질 카본 필름인 제 2코팅층이 합성되는 서로 다른 특성의 이중 막으로 코팅되는 헤드 드럼에 관한 것이다. 제 2코팅층의 경도는 제 1코팅층의 경도보다 작다. 상기 이중 코팅은 헤드 드럼이 적층되고 전원 전극에 부착되는 시편 지지대, 적층된 헤드 드럼의 표면으로부터 선정된 거리만큼 떨어진 동심원 상에 배치된 원형의 접지 전극을 포함하는 반응기를 갖고 있는 합성 장치에 의해 달성되며, 상기 시편 지지대는 헤드 드럼을 안정하게 적층하기 위한 공간 보상용 링을 포함한다.
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公开(公告)号：KR100131987B1
公开(公告)日：1998-04-18
申请号：KR1019940020259
申请日：1994-08-17
Applicant: 한국과학기술연구원
IPC: G11B5/255
CPC classification number: H01J37/3244 , C23C16/458 , C23C16/509 , G11B5/53 , G11B15/61 , H01J37/32082
Abstract: An apparatus and method for mass composing a coated layer for a circle substrate capable of mass coating a circle substrate by using a high frequency chemical vapor deposition method are discolsed. The composing apparatus includes a reactor(20-1), a power source system(20-2), a gas supply source system(20-3), and a vacuum system(20-4). The power source system(20-2) includes a plurality of high frequence power source(S1-S6). The reactor(20-1) includes a plurality of power apply electrodes, a plurality of sample support members(11b), and a plurality of grounds(13). The plurality of power apply electrodes are connected to high frequency power sources which are different from one another.
Abstract translation: 通过使用高频化学气相沉积法可以组合用于大量涂覆圆形衬底的圆形衬底的涂层的装置和方法被拆解。 该组合装置包括反应器（20-1），电源系统（20-2），气体供给源系统（20-3）和真空系统（20-4）。 电源系统（20-2）包括多个高频电源（S1-S6）。 电抗器（20-1）包括多个电力施加电极，多个样品支撑构件（11b）和多个接地（13）。 多个施加电极被连接到彼此不同的高频电源。
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