公开(公告)号：JPH10144612A

公开(公告)日：1998-05-29

申请号：JP30206996

申请日：1996-11-13

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L21/203 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor device which can deteriorate such a first nitride family-III-V compound semiconductor layer containing In as a GaInN layer when it is necessary to grow a second nitride family-II-V compound semiconductor layer not containing In on the first compound semiconductor layer at a growth temperature higher than the growth temperature than that of the first compound semiconductor layer. SOLUTION: In a method for manufacturing a GaN semiconductor laser, a growth temperature of a p type AlGaN cladding layer 29 and a p type GaN contact layer 30, which are provided above a GaInN active layer 26 and which is necessary to be grown at a growth temperature higher than that of the active layer, is set to be above the growth temperature of the active layer 26 and below 980 deg.C, e.g. between 930 and 960 deg.C. Preferably, prior to growth of the cladding layer 29, an underlying layer is previously covered with a p type AlGaN cap layer 28 which was grown at a growth temperature equal to or lower than the growth temperature of the active layer 26.

公开(公告)号：JPH10112439A

公开(公告)日：1998-04-28

申请号：JP26462796

申请日：1996-10-04

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing an n-type nitride III-V compound semiconductor which has less crystal defects and good quality. SOLUTION: A MOCVD device 10 for implementing this method has a reaction tube 14 having inside thereof a suscepter 12 holding a substrate W, and two bubblers 20A, 20B housing TMG(trimethylgallium) and diethyl selenium, respectively, and adapted for supplying their respective gases to the reaction tube 14 through a supply line 18 by bubbling with a hydrogen gas. The substrate W is set in the reaction tube 14, and the temperature is raised to 1000 deg.C while ammonium is supplied. In addition, a hydrogen gas is supplied to the bubblers 20A, 20B, thereby introducing the TMG gas and the diethyl selenium gas into the reaction tube 14. A GaN:Se crystal to which a Se atom as an n-type dopant is introduced is epitaxially grown on the substrate W. As a result, a GaN:Se crystal of good quality having less crystal defects is provided.

公开(公告)号：JPH09181398A

公开(公告)日：1997-07-11

申请号：JP35107795

申请日：1995-12-25

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  KAWASUMI TAKAYUKI

IPC: H01L21/203 ,  H01L21/363 ,  H01L33/08 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a II-VI compound semiconductor light emitting device long in service life and high in reliability. SOLUTION: A light emitting device structure composed of an N-type Zno0.68 asMg0.2 Cd0.12 Se clad layer 9, a Zn0.75 Cd0.25 Se active layer 10, and a P-type Zn0.68 ME0.2 Cd0.12 Se clad layer 11 is laminated on an N-type GaAs substrate 1 through the intermediary of an N-type In0.3 Ga0.7 As layer 8 lattice-matched to the device structure. An N-type In0.05 Ga0.95 As layer 3, an N-type In0.1 Ga0.9 As layer 4, an N-type In0.15 Ga0.85 As layer 5, an N-type In0.2 Ga0.8 As layer 6, and an N-type In0.25 Ga0.75 As layer 7 are interposed between the N-type InGaAs substrate 1 and the N-type In0.3 Ga0.7 As layer 8 so as to relax lattice mismatching.

公开(公告)号：JP2013243217A

公开(公告)日：2013-12-05

申请号：JP2012114778

申请日：2012-05-18

Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  Sony Corp ,  ソニー株式会社

Inventor： UENO MASANORI ,  KATAYAMA KOJI ,  IKEGAMI TAKATOSHI ,  NAKAMURA TAKAO ,  YANASHIMA KATSUNORI ,  NAKAJIMA HIROSHI

IPC: H01S5/028 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element which can reduce an operating current required for obtaining an intended optical output.SOLUTION: In a group III nitride semiconductor laser element 11, a first reflection film 43a of an optical resonator is formed to have a reflectance of less than 60% and a second reflection film 43b of the optical resonator is formed to have a reflectance of 85% and over. Because of this, deterioration in oscillation characteristic due to increase in threshold current can be inhibited and the occurrence of spatial ununiformity in an optical density in the optical resonator can be prevented. When reflectances on both end faces 26, 28 are too low, the threshold current is increased due to increase in mirror loss. When reflectances on both end faces 26, 28 are too high, a laser gain is decreased due to generation of spatial ununiformity in an optical concentration in the optical resonator. Due to the occurrence of optical concentration ununiformity (spatial hole burning), not only a phenomenon where a kink is observed in I-L characteristics exists but power-light output conversion efficiency is decreased.

Abstract translation: 要解决的问题：提供能够降低获得预期光输出所需的工作电流的III族氮化物半导体激光元件。解决方案：在III族氮化物半导体激光元件11中，光谐振器的第一反射膜43a是 形成为具有小于60％的反射率和光谐振器的第二反射膜43b形成为具有85％以上的反射率。 因此，可以抑制由于阈值电流的增加引起的振荡特性的劣化，能够防止光谐振器的光密度的空间不均匀性的发生。 当两个端面26,28的反射率太低时，由于镜损耗的增加，阈值电流增加。 当两个端面26,28的反射率太高时，由于在光学谐振器中的光学浓度的空间不均匀性的产生而导致激光增益降低。 由于光学浓度不均匀（空间孔烧）的发生，不仅存在在I-L特性中观察到扭结的现象，而且降低了功率光输出转换效率。

公开(公告)号：JP2012248575A

公开(公告)日：2012-12-13

申请号：JP2011117164

申请日：2011-05-25

Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  Sony Corp ,  ソニー株式会社

Inventor： SHIOYA YOHEI ,  YOSHIZUMI YUSUKE ,  KYONO TAKASHI ,  SUMITOMO TAKAMICHI ,  UENO MASANORI ,  YANASHIMA KATSUNORI ,  TASAI KUNIHIKO ,  NAKAJIMA HIROSHI

IPC: H01S5/323 ,  C23C16/34 ,  H01L21/205

CPC classification number: H01S5/3201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2304/04

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a clad structure capable of reducing the threshold current in laser oscillation of long wavelength.SOLUTION: An n-type clad layer 21, an active layer 25 and a p-type clad layer 23 are arranged in the direction of a normal axis NX of a principal surface 17a. The principal surface 17a is inclining in the direction of the m-axis of a hexagonal nitride semiconductor at an angle of ALPHA in the range of 63 degree or more and less than 80 degree with reference to a plane orthogonal to a reference axis Cx extending in the direction of the c-axis of the hexagonal nitride semiconductor. The active layer 25 is provided between the n-type clad layer 21 and the p-type clad layer 23. The active layer 25 is provided to generate light having a peak wavelength in a range of 480 nm or more and 600 nm or less. Refractive indicis of the n-type clad layer 21 and the p-type clad layer 23 are smaller than that of GaN. The n-type clad layer 21 has a thickness Dn of 2 μm or more, and the p-type clad layer 23 has a thickness Dp of 500 nm or more.

Abstract translation: 要解决的问题：提供一种具有能够降低长波长的激光振荡中的阈值电流的包层结构的氮化物半导体激光元件。 解决方案：在主表面17a的法线轴NX的方向上布置n型覆盖层21，有源层25和p型覆盖层23。 主表面17a相对于与在其中延伸的基准轴Cx正交的平面以相对于六边形氮化物半导体的m轴的方向倾斜在以下角度的角度处于63度以上且小于80度的范围内的ALPHA的角度 六方氮化物半导体的c轴方向。 有源层25设置在n型覆盖层21和p型覆盖层23之间。有源层25被设置为产生峰值波长在480nm以上且600nm以下的范围的光。 n型覆盖层21和p型覆盖层23的折射率小于GaN的折射率。 n型覆盖层21的厚度Dn为2μm以上，p型覆盖层23的厚度Dp为500nm以上。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012227492A

公开(公告)日：2012-11-15

申请号：JP2011096443

申请日：2011-04-22

Applicant: Sumitomo Electric Ind Ltd ,  Sony Corp ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： KYONO TAKASHI ,  SHIOYA YOHEI ,  SUMITOMO TAKAMICHI ,  YOSHIZUMI YUSUKE ,  UENO MASANORI ,  YANASHIMA KATSUNORI ,  TASAI KUNIHIKO ,  NAKAJIMA HIROSHI

IPC: H01S5/343 ,  H01L21/205

CPC classification number: H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser that allows reduction in driving voltage while suppressing degradation of light confining property.SOLUTION: In a semiconductor region 19, an active layer 25 in a light-emitting layer 13, and a first cladding region 21 and a second cladding region 23 are provided above a primary surface 17a. The second cladding region 23 includes a first p-type group III nitride semiconductor layer 27 and a second p-type group III nitride semiconductor layer 29. The first p-type group III nitride semiconductor layer 27 is composed of an InAlGaN layer, and the second p-type group III nitride semiconductor layer 29 is composed of a semiconductor different from a material of the InAlGaN layer. The InAlGaN layer includes anisotropic distortion. The first p-type group III nitride semiconductor layer 27 is provided between the second p-type group III nitride semiconductor layer 29 and the active layer 25. The specific resistance ρ29 of the second p-type group III nitride semiconductor layer 29 is lower than the specific resistance ρ27 of the first p-type group III nitride semiconductor layer 27.

Abstract translation: 要解决的问题：提供一种能够抑制光限制性降低的驱动电压的氮化物半导体激光器。 解决方案：在半导体区域19中，在主表面17a上方设置发光层13中的有源层25，第一包层区域21和第二包层区域23。 第二包层区23包括第一p型III族氮化物半导体层27和第二p型III族氮化物半导体层29.第一p型III族氮化物半导体层27由InAlGaN层构成， 第二p型III族氮化物半导体层29由与InAlGaN层的材料不同的半导体构成。 InAlGaN层包括各向异性失真。 第一p型III族氮化物半导体层27设置在第二p型III族氮化物半导体层29和有源层25之间。第二p型III族氮化物半导体层29的比电阻ρ29低于 第一p型III族氮化物半导体层27的比电阻ρ27。版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2009246393A

公开(公告)日：2009-10-22

申请号：JP2009174008

申请日：2009-07-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  SHIOMI HARUNORI ,  KAZETAGAWA MUNEYUKI ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  HIRAMATSU YUJI ,  HATADA IZUHO ,  OKANO NOBUKATA ,  TOMITANI SHIGETAKA ,  YANASHIMA KATSUNORI ,  HINO TOMOKIMI ,  NARUI HIRONOBU

IPC: H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode with extremely high luminous efficiency, capable of being manufactured at low cost through a single processing of an epitaxial growth, and to provide a method of manufacturing the same. SOLUTION: A protrusion 12 is formed on one principal surface of a substrate 11, such as a sapphire substrate and the like, by means of a material different from that of the substrate 11. A nitride group III-V compound semiconductor layer 15 is grown up in a recess 13 having an invesely trapezoidal shape at both sides of the protrusion 12, in such structure as a pentagon-shaped sectional form by way of a triangular sectional form with the bottom of the recess 13 as the base of a triangle. Otherwise, the nitride group III-V compound semiconductor layer 15 is grown up in the lateral direction, after it is grown up to the triangular sectional shape with the bottom of the recess 13 as its base. The nitride group III-V compound semiconductor layer 15 with an active layer contained therein is grown up on the nitride group III-V compound semiconductor to constitute the structure of a light-emitting diode. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有极高发光效率的发光二极管，能够通过外延生长的单一处理以低成本制造，并提供其制造方法。 解决方案：通过不同于衬底11的材料，在诸如蓝宝石衬底等的衬底11的一个主表面上形成突起12.氮化物III-V族化合物半导体层 在突出部12的两侧的长度方向成长的凹部13中，以凹凸部13的底部为三角形的三角形截面形状为五边形的结构， 三角形。 否则，氮化物III-V族化合物半导体层15在以凹槽13的底部为基底的三角形截面形状之后，沿横向长大。 其中含有活性层的氮化物III-V族化合物半导体层15在氮化物III-V族化合物半导体上生长，以构成发光二极管的结构。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006135208A

公开(公告)日：2006-05-25

申请号：JP2004324641

申请日：2004-11-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YASUDA TOSHIKAZU ,  OMAE AKIRA ,  KAZETAGAWA MUNEYUKI ,  HATADA IZUHO ,  YANASHIMA KATSUNORI

IPC: H01L33/06 ,  H01L33/34

Abstract: PROBLEM TO BE SOLVED: To enable control of the desired position of the concentration distribution peak values of rare earth element ions and adjustment of the luminous intensity of a light-emitting element, by keeping the rare earth element ions in a predetermined distribution conditions and moving the diffusion region of rare earth element ions in a substrate depthwise direction through heat treatment. SOLUTION: A manufacturing method comprises the steps of forming a diffusion region 16 of rare earth element ions, having a predetermined distribution in a substrate 11, and keeping rare earth element ions in a state of predetermined distribution and making the diffusion region 16 of rare earth element ions move, in the depthwise direction of the substrate 11 through heat treatment. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了控制稀土元素离子的浓度分布峰值的期望位置和通过将稀土元素离子保持在预定分布中调节发光元件的发光强度 通过热处理在衬底深度方向上移动稀土元素离子的扩散区域。 解决方案：一种制造方法包括以下步骤：在衬底11中形成具有预定分布的稀土离子的扩散区16，并将稀土元素离子保持在预定分布的状态，并使扩散区16 的稀土元素离子通过热处理在基板11的深度方向上移动。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006111920A

公开(公告)日：2006-04-27

申请号：JP2004300057

申请日：2004-10-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  YASUDA TOSHIKAZU ,  KAZETAGAWA MUNEYUKI ,  MEMESAWA SATOHIKO ,  YANASHIMA KATSUNORI

IPC: C23C14/24 ,  H01L21/203 ,  H01L51/50 ,  H05B33/10

Abstract: PROBLEM TO BE SOLVED: To heat carrier gas to a high temperature above the boiling temperature or sublimation temperature of an organic raw material in the vicinity of the substrate to be vapor-deposited without providing a dedicated heating apparatus for heating carrier gas at the outside of the vapor deposition system by providing a gas heating body composed of a plurality of solid pieces for heating carrier gas at the inside of a gas passage of releasing the gas to the direction of the substrate to be vapor-deposited. SOLUTION: Regarding the vapor deposition system, the inside of a chamber is provided with a vapor deposition source 12 and the substrate to be vapor-deposited so as to be confronted. The vapor deposition source 12 is provided with: a crucible 13 of evaporating a vapor deposition material 71; a gas passage 14 of feeding gas 61 to the direction of the substrate to be vapor-deposited along the outer circumferential side of the crucible 13; and a gas heating body 15 of heating the gas 61 passing through the gas passage 14. The gas heating body 15 is composed of a plurality of solid pieces 151 arranged at the inside of the gas passage 14. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了将载气加热到高于要蒸镀的基板附近的有机原料的沸点或升华温度的高温，而不需要提供用于加热载气的专用加热装置 通过提供由多个固体块构成的气体加热体，在气体通道的内部加热载气以将气体释放到要沉积的基板的方向，从而形成气相沉积系统的外部。 解决方案：关于气相沉积系统，室的内部设置有气相沉积源12和待气相沉积的基板以便面对。 气相沉积源12设置有：蒸发蒸镀材料71的坩埚13; 沿着坩埚13的外周侧向气相沉积基板的方向供给气体61的气体通路14; 以及加热通过气体通道14的气体61的气体加热体15.气体加热体15由布置在气体通道14的内部的多个实心块151构成。（C） 2006年，JPO＆NCIPI

公开(公告)号：JP2006093718A

公开(公告)日：2006-04-06

申请号：JP2005288273

申请日：2005-09-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: H01L21/205 ,  H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor having a large low-defect region on a surface, and to provide a manufacturing method of a semiconductor element. SOLUTION: On a substrate 100, a seed crystal section 105 is formed into a stripe geometry via a buffer layer 100a, and next, a crystal is grown from the seed crystal section 105 in two-stage growing conditions, to form a nitride semiconductor layer 107. In the first stage, a low-temperature growth section 107a, whose cross-sectional shape in the thickness direction is trapezoidal, is formed at a growing temperature of 1,030°C; and in the second stage, a lateral growth is made to progress dominantly at a growing temperature of 1,070°C, to form a high-temperature growth section 107b between the low-temperature growth sections 107a. On the surface of the nitride semiconductor layer 107, hillocks and normal lattice defects are reduced, at sections above the low-temperature growth sections 107a. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供在表面上具有大的低缺陷区域的氮化物半导体的制造方法，并提供半导体元件的制造方法。 解决方案：在基板100上，通过缓冲层100a将晶种部分105形成为条纹几何形状，接着在两阶段生长条件下从晶种部分105生长晶体，形成 氮化物半导体层107.在第一阶段中，在1,030℃的生长温度下形成其厚度方向的横截面形状为梯形的低温生长部分107a; 并且在第二阶段中，使横向生长在1070℃的生长温度下主要进行，以在低温生长部分107a之间形成高温生长部分107b。 在氮化物半导体层107的表面上，在低温生长部分107a上方的部分减小了小丘和正常晶格缺陷。 版权所有（C）2006，JPO＆NCIPI