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    Plasma neutralisation cathode
    102.
    发明公开
    Plasma neutralisation cathode 失效
    等离子Neutralisationskathode。

    公开(公告)号：EP0464383A2

    公开(公告)日：1992-01-08

    申请号：EP91109114.8

    申请日：1991-06-04

    Applicant: HAUZER TECHNO COATING EUROPE BV

    Inventor： Alexeevich, Arkhipov Boris ,  Mitrofanovich, Gorbachev Yuriy ,  Alexeevich, Ivanov Viktor ,  Nikolaevich, Kozubsky Konstantin ,  Alexeevich, Komarov Georgy

    IPC: H01J3/02

    CPC classification number: H01J3/025

    Abstract: A plasma compensation cathode comprises a casing (1) accommodating coaxially with its outlet hole (2) a hollow holder (3) and a thermal emitter (4) with a central passage (5), a layer (10) of material chemically inert at high temperatures to the materials of the holder and emitter being interposed therebetween. The central passage (5) is blind at the side of admission of gas, and is communicated with the interior of the holder (3) by way of a through passage (8) made in the wall of the thermal emitter (4) so that its axis intersects the axis of passage (5), and longitudinal grooves (9) made in the side surface of the thermal emitter (4) at the location of the inlet holes of the through passage (8). The holder (3) is embraced by heater (6) having a support ring (7) positioned in its midportion and secured in an insulation sleeve (18) separating the heater (6) from the coaxial heat screens (11) interconnected successively to define a sealed cavity (14) wherethrough the interior of the holder (3) communicates with the gas feeding pipe (13) secured in the casing (1) through the support insulator (17). Interposed between mechanical filters (16) and between holder (3) and pipe (13) is a getter (15).

    Abstract translation: 等离子体补偿阴极包括与其出口孔（2）同轴的壳体（1），空心保持器（3）和具有中心通道（5）的热发射器（4），具有化学惰性的材料层（10） 保持器和发射器的材料的高温被插入其间。 中心通道（5）在入口侧是盲目的，并且通过在热发射器（4）的壁中形成的通道（8）与保持器（3）的内部连通，使得 其轴线与通道（5）的轴线相交，以及在通过通道（8）的入口孔的位置处在热发射器（4）的侧表面中形成的纵向槽（9）。 保持器（3）由加热器（6）包围，该加热器具有位于其中间部分中的支撑环（7），并固定在绝缘套筒（18）中，该绝缘套筒将加热器（6）与同轴互连的热筛（11）分开连接， 密封腔（14），其中保持器（3）的内部通过支撑绝缘体（17）与固定在壳体（1）中的气体供给管（13）连通。 介于机械过滤器（16）和保持器（3）和管道（13）之间的是吸气剂（15）。

    Nonthermionic hollow anode gas discharge electron beam source
    104.
    发明公开
    Nonthermionic hollow anode gas discharge electron beam source 失效
    Nichtthermische Hohlanode-Gasentladungselektronenstrahlquelle。

    公开(公告)号：EP0158970A1

    公开(公告)日：1985-10-23

    申请号：EP85104350.5

    申请日：1985-04-10

    Applicant: SPECTRUM CONTROL, INC. (a Pennsylvania corporation)

    Inventor： Ham, Mooyoung

    IPC: H01J37/077

    CPC classification number: H01J17/44 ,  H01J3/025 ,  H01J33/00 ,  H01J37/077

    Abstract: @ Apparatus and method for producing a pluri-energetic electron beam source. The apparatus includes a housing (10) which functions as an anode, the same having an electron emission window (12) convered by an electron-transparent grid, a cathode body mounted within the housing (10) and electically isolated therefrom, the spacing between the cathode body and grid being sufficient to permit a gas discharge to be maintained between them having a plasma region substantially thinner than the cathode sheath region. The method involves the simultaneous feeding of gas between a cathode body and an anode grid, applying voltages of about 10 kV to 20 kV and regulating the gas feed rate and the voltage to maintain a discharge condition of the character described above.

    電子束處理設備 ELECTRON BEAM TREATMENT APPARATUS
    105.
    发明专利
    電子束處理設備 ELECTRON BEAM TREATMENT APPARATUS 失效
    电子束处理设备 ELECTRON BEAM TREATMENT APPARATUS

    公开(公告)号：TW200515461A

    公开(公告)日：2005-05-01

    申请号：TW093133114

    申请日：2004-10-29

    Applicant: 應用材料股份有限公司 APPLIED MATERIALS, INC.

    Inventor： 狄摩斯亞歷山卓T. DEMOS, ALEXANDER T. ,  波奈康提哈利K PONNEKANTI, HARI K. ,  趙軍 ZHAO, JUN ,  阿莫海倫R ARMER, HELEN R.

    IPC: H01J

    CPC classification number: H01J37/317 ,  H01J3/025 ,  H01J37/077

    Abstract: 本發明之一實施例係是一種電子束處理設備，其至少包含：(a)一室；(b)一具有相當大表面積的陰極，該表面係暴露在該室內部；(c)一陽極，該陽極上具有孔洞並位於該室內且與該陰極以一操作距離彼此相隔；(d)一晶圓支撐器，其位於該室內部且面向該陽極；(e)一負型電位源，其之輸出係被施加到該陰極上以提供一陰極電位；(f)一電位源，其之輸出係被施加到該陽極上；(g)一氣體入口，其係被設置成可讓氣體以一引入速率(introductionrate)進入該室內；及(h)一幫浦，其係被設置成可以一排出速率將廢氣體排出該室外，該引入速率及該排出速率可提供該室一氣體壓力；其中陰極電位值、氣體壓力及操作距離係可使該陰極與陽極間不會出現電弧，且該操作距離係大於一電子的平均自由路徑。

    Abstract in simplified Chinese: 本发明之一实施例系是一种电子束处理设备，其至少包含：(a)一室；(b)一具有相当大表面积的阴极，该表面系暴露在该室内部；(c)一阳极，该阳极上具有孔洞并位于该室内且与该阴极以一操作距离彼此相隔；(d)一晶圆支撑器，其位于该室内部且面向该阳极；(e)一负型电位源，其之输出系被施加到该阴极上以提供一阴极电位；(f)一电位源，其之输出系被施加到该阳极上；(g)一气体入口，其系被设置成可让气体以一引入速率(introductionrate)进入该室内；及(h)一帮浦，其系被设置成可以一排出速率将废气体排出该室外，该引入速率及该排出速率可提供该室一气体压力；其中阴极电位值、气体压力及操作距离系可使该阴极与阳极间不会出现电弧，且该操作距离系大于一电子的平均自由路径。

    Gas electron multiplier, manufacturing method of gas electron multiplication foil using it, and radiation detector using gas electron multiplier
    109.
    发明专利
    Gas electron multiplier, manufacturing method of gas electron multiplication foil using it, and radiation detector using gas electron multiplier 有权
    气体电子乘法器，使用它的气体电子倍增器的制造方法和使用气体电子倍增器的辐射探测器

    公开(公告)号：JP2007234485A

    公开(公告)日：2007-09-13

    申请号：JP2006056997

    申请日：2006-03-02

    Applicant: Institute Of Physical & Chemical Research ,  Scienergy Co Ltd ,  Univ Of Tokyo ,  サイエナジー株式会社 ,  国立大学法人 東京大学 ,  独立行政法人理化学研究所

    Inventor： TAMAGAWA TORU ,  KOSHIMUTA SATOSHI ,  HAMAGAKI HIDEKI

    IPC: H01J47/14 ,  G01T1/18 ,  H01J9/02

    CPC classification number: H01J3/025 ,  G01T1/18 ,  H01J47/02

    Abstract: PROBLEM TO BE SOLVED: To reduce expansion of electrons as compared with a conventional one without degrading the multiplication factor of electrons; to provide a high electron multiplication factor; and to improve positional resolution.
    SOLUTION: This gas electron multiplier using interaction between radiation and gas by an photoelectric effect includes a chamber 102 filled with gas, and a single gas electron multiplication foil 12 arranged in the chamber. The gas electron multiplication foil is made of a plate-like multilayer body composed by having a plate-like insulation layer 12a formed out of a macromolecular polymer material having a thickness of around 100-300 μm, and flat metal layers 12b and 12c overlaid on both surfaces of the insulation layer, and the plate-like multilayer body is provided with through-hole structures 12d.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：与常规的相比，减少电子的膨胀而不降低电子的倍增因子; 提供高电子倍增因子; 并提高位置分辨率。 解决方案：通过光电效应使用辐射与气体之间的相互作用的气体电子倍增器包括填充有气体的腔室102和布置在腔室中的单个气体电子倍增箔片12。 气体电子倍增箔由板状的多层体构成，该层状体具有由厚度约100〜300μm的大分子聚合物材料形成的板状绝缘层12a，叠层在平坦的金属层12b，12c上 绝缘层的两个表面和板状多层体都设有通孔结构12d。 版权所有（C）2007，JPO＆INPIT

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