公开(公告)号：US20180247403A1

公开(公告)日：2018-08-30

申请号：US15963054

申请日：2018-04-25

Applicant: KLA-Tencor Technologies Corporation

Inventor： Paul Frank Marella ,  Sharon McCauley ,  Ellis Chang ,  William Volk ,  James Wiley ,  Sterling Watson ,  Sagar A. Kekare ,  Carl Hess

IPC: G06T7/00 ,  G03F1/84 ,  G01N21/956 ,  G03F7/20 ,  G01N21/95

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

公开(公告)号：US20040252297A1

公开(公告)日：2004-12-16

申请号：US10887786

申请日：2004-07-09

Applicant: KLA-Tencor Technologies Corporation

Inventor： Christopher R. Fairley ,  Tao-Yi Fu ,  Gershon Perelman ,  Bin-Ming Benjamin Tsai

IPC: G01N021/88

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G01N21/95607 ,  G01N21/95623 ,  G01N2021/8825

Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

Abstract translation: 提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。 缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。 暗场辐射由两个可调节的高度激光束提供，其将晶片的表面从约6度39度照射。 每个激光器定向在与晶片上的曼哈顿几何形状的取向成45度的方位角，并且彼此成90度的方位角。 通过改变柱面透镜位置​​来补偿角度反射镜的变化，通过平移可调节的反射镜，将照明光斑定位在传感器视场内，旋转和随后移动柱面透镜来提供垂直角度调整性。 系统中的明场分束器是可拆卸的，并且当执行暗场照明时，优选地用空白物替换。 系统的光级控制由双偏振器第一级提供。 从第二偏振片射出的光通过吸收一部分光的滤光器，并包括第二级光控制。 然后光束通过偏振分光镜。 第二通道被进一步反射和偏振，并且两个光束此后照亮基板。

公开(公告)号：US20040233444A1

公开(公告)日：2004-11-25

申请号：US10785821

申请日：2004-02-23

Applicant: KLA-Tencor Technologies Corporation

Inventor： Walter D. Mieher ,  Ady Levy ,  Boris Golovanesky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Christopher F. Bevis ,  John Fielden ,  Noah Bareket ,  Anatoly Fabrikant ,  Mark Ghinovker ,  Piotr Zalicki ,  Dan Wack

IPC: G01B011/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an interferometer is employed to modulate substantially a plurality of wavelengths of a broadband source and then acquiring one or more images of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is then determined by analyzing the one or more acquired images from the periodic targets using a scatterometry overlay technique based on the predefined offsets.

Abstract translation: 公开了一种确定多层样本的两层之间的覆盖误差的方法。 对于每个具有由第一层形成的第一结构和由样本的第二层形成的第二结构的多个周期性目标，使用干涉仪来调制宽带源的基本上多个波长，然后获取一个或 更多图像的周期性目标。 在第一和第二结构之间有预定义的偏移。 然后通过使用基于预定义的偏移的散射测量覆盖技术来分析来自周期性目标的一个或多个获取的图像来确定第一和第二结构之间的重叠误差。

公开(公告)号：US20040233439A1

公开(公告)日：2004-11-25

申请号：US10785395

申请日：2004-02-23

Applicant: KLA-Tencor Technologies Corporation

Inventor： Walter D. Mieher ,  Ady Levy ,  Boris Golovanevsky ,  Michael Friedmann ,  Ian Smith ,  Michael E. Adel ,  Anatoly Fabrikant ,  John Fielden ,  Noah Bareket ,  Mark Ghinovker

IPC: G01B011/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets target that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, a plurality of optical signals are measured at a plurality of incident angles, wherein there are predefined offsets between the first and second structures. An overlay error is then determined between the first and second structures by analyzing the measured optical signals at the plurality of incident angles from the periodic targets using a scatterometry overlay technique based on the predefined offsets without using a calibration operation.

Abstract translation: 公开了一种确定多层样本的两层之间的覆盖误差的方法。 对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标中的每一个，多个光信号以多个入射角测量，其中存在 第一和第二结构之间的预定偏移量。 然后，在不使用校准操作的情况下，通过使用基于预定义的偏移的散射测量覆盖技术来分析来自周期性靶的多个入射角的测量光信号，从而在第一和第二结构之间确定覆盖误差。

公开(公告)号：US20040201837A1

公开(公告)日：2004-10-14

申请号：US10410126

申请日：2003-04-08

Applicant: KLA-Tencor Technologies Corporation

Inventor： Steven R. Lange

IPC: G01N021/00

CPC classification number: G01N33/54366 ,  G01N21/9501

Abstract: A surface inspection apparatus and method are disclosed. In particular, the method and apparatus are capable of inspecting a surface in two (or more) optical regimes thereby enhancing the defect detection properties of such method and apparatus. A method involves illuminating the surface with light in a first wavelength range and a second wavelength range. The first wavelength range selected so that the surface is opaque to the light of the first wavelength range so that a resultant optical signal is produced that is predominated by diffractive and scattering properties of the surface. The second wavelength range is selected so that the surface is at least partially transmissive to light in the second wavelength range so that another resultant optical signal is produced that is predominated by thin film optical properties of the surface. The resultant optical signals are detected and processed to detect defects in the surface. Devices for implementing such methods are also disclosed.

Abstract translation: 公开了一种表面检查装置和方法。 特别地，该方法和装置能够在两个（或多个）光学方式中检查表面，从而增强了这种方法和装置的缺陷检测特性。 一种方法包括用在第一波长范围和第二波长范围内的光照射表面。 选择的第一波长范围使得表面对于第一波长范围的光是不透明的，使得产生以表面的衍射和散射性质为主的所得光信号。 选择第二波长范围使得表面对于第二波长范围中的光至少部分透射，从而产生以表面的薄膜光学性质为主的另外产生的光信号。 检测并处理所得到的光信号以检测表面中的缺陷。 还公开了用于实现这些方法的装置。

公开(公告)号：US20040130718A1

公开(公告)日：2004-07-08

申请号：US10339518

申请日：2003-01-08

Applicant: KLA-Tencor Technologies Corporation

Inventor： Shankar Krishnan

IPC: G01J004/00

CPC classification number: G01J4/00 ,  G01B11/06 ,  G01B11/065

Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

Abstract translation: 在诸如绝缘体上硅（SOI）的多层基板上的薄膜上执行单波长椭偏仪（SWE）的系统应用具有小于多层膜的表层的厚度的吸收距离的测量光束， 层基板。 例如，对于SOI衬底，测量光束被选择为具有导致小于表面硅层厚度的吸收距离的波长。 该系统可以包括清洁激光器以提供同时清洁以提高测量精度，而不会不利地影响生产量。 测量光束源可以被配置为提供一个波长的测量光束和较长波长的清洁光束，使得测量光束的吸收深度小于表面层厚度，而清洁光束的吸收深度更大 比表面层厚度。

公开(公告)号：US20030142782A1

公开(公告)日：2003-07-31

申请号：US10242496

申请日：2002-09-12

Applicant: KLA-Tencor Technologies Corporation

Inventor： Mehran Nasser-Ghodsi ,  Phil Wood

IPC: G01N023/223 ,  G01N023/02

CPC classification number: G01N23/2252 ,  H01J2237/2445

Abstract: The present invention includes a system for efficient and effective detection and characterization of dishing and/or erosion. An x-ray emission inducer is used to scan a target on a sample. The target can be scanned at an acute incident angle to allow characterization of the dishing and/or erosion and analysis of the metallization or thin film layer topology.

Abstract translation: 本发明包括用于有效和有效地检测和表征凹陷和/或侵蚀的系统。 X射线发射诱导剂用于扫描样品上的靶。 可以以锐角入射角扫描靶，以便表征金属化或薄膜层拓扑的凹陷和/或腐蚀和分析。

公开(公告)号：US20030097228A1

公开(公告)日：2003-05-22

申请号：US10281432

申请日：2002-10-24

Applicant: KLA-Tencor Technologies, Corporation

Inventor： Akella V.S. Satya ,  Li Song ,  Robert Thomas Long ,  Kurt H. Weiner

IPC: G06F019/00 ,  G01N037/00

CPC classification number: G01R31/287 ,  G01R31/2831 ,  G01R31/2856 ,  G01R31/2858 ,  G01R31/2894

Abstract: Disclosed are methods and apparatus for determining whether to perform burn-in on a semiconductor product, such as a product wafer or product wafer lot. In general terms, test structures on the semiconductor product are inspected to extract yield information, such as defect densities. Since this yield information is related to the early or extrinsic instantaneous failure rate, one may then determine the instantaneous extrinsic failure rate for one or more failure mechanisms, such as electromigration, gate oxide breakdown, or hot carrier injection, based on this yield information. It is then determined whether to perform burn-in on the semiconductor product based on the determined instantaneous failure rate.

Abstract translation: 公开了用于确定是否对诸如产品晶片或产品晶片批次的半导体产品进行老化的方法和装置。 通常，检查半导体产品上的测试结构以提取诸如缺陷密度的产量信息。 由于该产量信息与早期或非本征瞬时故障率相关，因此可以基于该产量信息来确定一个或多个故障机制的瞬时外在故障率，例如电迁移，栅极氧化物分解或热载流子注入。 然后，根据所确定的瞬时故障率，确定是否对半导体产品进行老化。

公开(公告)号：US20030063705A1

公开(公告)日：2003-04-03

申请号：US09990171

申请日：2001-11-21

Applicant: KLA-Tencor Technologies Corporation

Inventor： Mehran Nasser-Ghodsi ,  Anne Testoni ,  Steven Oestreich

IPC: G01B015/06

CPC classification number: G01N23/20

Abstract: The present invention provides a system for characterizing voids in test samples. An x-ray emission inducer scans a target such as a via on a test sample. A metallization or thin film layer emits x-rays as a result of the scan. The x-ray emission intensity can be measured and compared against a control measurement. The information obtained can be used to characterize a void in the scan target.

Abstract translation: 本发明提供了一种用于表征测试样品中的空隙的系统。 X射线衍射诱导剂在测试样品上扫描诸如通孔的靶。 作为扫描的结果，金属化或薄膜层发射X射线。 可以测量x射线发射强度并将其与对照测量进行比较。 获得的信息可用于表征扫描目标中的空白。

公开(公告)号：US11204330B1

公开(公告)日：2021-12-21

申请号：US14788700

申请日：2015-06-30

Applicant: KLA-Tencor Technologies Corporation

Inventor： Mehdi Vaez-Iravani ,  Eliezer Rosengaus

IPC: G01N21/00 ,  G01N21/88

Abstract: Systems and methods for inspection of a specimen are provided. One system includes an illumination subsystem configured to illuminate the specimen by scanning a spot across the specimen. The system also includes a non-imaging detection subsystem configured to generate output signals responsive to light specularly reflected from the spot scanned across the specimen. In addition, the system includes a processor configured to generate images of the specimen using the output signals and to detect defects on the specimen using the images. In one embodiment, the non-imaging detection subsystem includes an objective and a detector. An NA of the objective does not match a pixel size of the detector. In another embodiment, the non-imaging detection subsystem includes an objective having an NA of greater than about 0.05. The system may be configured for multi-spot illumination and multi-channel detection. Alternatively, the system may be configured for single spot illumination and multi-channel detection.