COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS
    112.
    发明公开
    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS 审中-公开
    BESCHICHTETER GEGENSTAND UND CVD-VERFAHREN

    公开(公告)号:EP2830781A2

    公开(公告)日:2015-02-04

    申请号:EP13789056.2

    申请日:2013-03-26

    Applicant: Silcotek Corp.

    Inventor: SMITH, David A.

    Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

    Abstract translation: 公开了涂覆制品和化学气相沉积工艺。 涂覆制品包括通过化学气相沉积施加到涂覆制品上的官能化层。 官能化层是选自氧化官能化层,有机氟处理层,氟硅烷处理层,三甲基硅烷处理表面,有机氟代三烷氧基硅烷处理层,有机氟代甲硅烷基化处理层,有机氟甲硅烷基处理层 三氟代1,1,2,2-四氢辛基硅烷处理层,有机氟醇处理层,五氟丙醇处理层,烯丙基三氟异丙醚处理层,(全氟丁基)乙烯处理层,(全氟辛基)乙烯处理层,和 其组合。 该方法包括应用官能化层。

    LIQUID CHROMATOGRAPHY TECHNIQUE
    114.
    发明公开

    公开(公告)号:EP4343321A2

    公开(公告)日:2024-03-27

    申请号:EP23207802.2

    申请日:2019-02-22

    Applicant: Silcotek Corp.

    Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated stainless steel fluid contacting element; and transporting a fluid to contact the coated stainless-steel fluid-contacting element; wherein the fluid includes adenosine triphosphate; wherein the coated stainless steel fluid-contacting element has a coating, the coating including carbon, silicon, oxygen, and hydrogen.

    SEMICONDUCTOR FABRICATION PROCESS
    116.
    发明公开
    SEMICONDUCTOR FABRICATION PROCESS 审中-公开
    HALBLEITERHERSTELLUNGSVERFAHREN

    公开(公告)号:EP2988327A1

    公开(公告)日:2016-02-24

    申请号:EP15179688.5

    申请日:2015-08-04

    Applicant: Silcotek Corp.

    CPC classification number: C23C8/18 C23C16/325 C23C16/56

    Abstract: Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer beign applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate.

    Abstract translation: 描述半导体制造工艺。 半导体制造工艺的一个实施方案包括通过化学气相沉积提供由二甲基硅烷分解形成的层,通过流体材料施加层,然后将该层定位在用于制备半导体产品的系统中。 另外或替代地,半导体产品被生产和/或该层在基底上。

    LIQUID CHROMATOGRAPHY TECHNIQUE
    118.
    发明公开

    公开(公告)号:EP4343321A3

    公开(公告)日:2024-04-10

    申请号:EP23207802.2

    申请日:2019-02-22

    Applicant: Silcotek Corp.

    Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated stainless steel fluid contacting element; and transporting a fluid to contact the coated stainless-steel fluid-contacting element; wherein the fluid includes adenosine triphosphate; wherein the coated stainless steel fluid-contacting element has a coating, the coating including carbon, silicon, oxygen, and hydrogen.

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