公开(公告)号：WO2007040701A2

公开(公告)日：2007-04-12

申请号：PCT/US2006/026225

申请日：2006-07-06

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji

Inventor： SUZUKI, Kenji

IPC: C23C16/16 ,  C23C16/04

CPC classification number: C23C16/16 ,  C23C16/045 ,  H01L21/28556 ,  H01L21/76846

Abstract: A method (300) for forming a Ru layer (560, 560', 561 , 580) for an integrated circuit by providing a patterned substrate (500, 504) in a process chamber (10, 110), and exposing the substrate (25, 125, 500, 504) to a process gas comprising a ruthenium carbonyl precursor and a CO gas to form a Ru layer (560, 560', 561 , 580) over a feature (530, 532, 533) of the patterned substrate (500, 504). In one embodiment, the CO partial pressure in the process chamber (10, 110) is varied during the exposing to control the step coverage of the Ru layer (560, 560', 561 , 580) over the feature (530, 532, 533). In an alternative or further embodiment, the step coverage can be controlled by varying the substrate temperature during the exposure.

Abstract translation: 一种用于通过在处理室（10,110）中提供图案化衬底（500,504）形成用于集成电路的Ru层（560,560'，561,580）的方法（300），并且使衬底（25 125,500,504）提供给包含羰基钌羰基前体和CO气体的工艺气体，以在图案化衬底的特征（530,532,533）上形成Ru层（560,560'，561,580） 500，504）。 在一个实施例中，处理室（10,110）中的CO分压在曝光期间变化，以控制在特征（530,532,533）上的Ru层（560,560'，561,580）的台阶覆盖 ）。 在替代或进一步的实施例中，可以通过在曝光期间改变衬底温度来控制台阶覆盖。

公开(公告)号：WO2006104647A2

公开(公告)日：2006-10-05

申请号：PCT/US2006/008112

申请日：2006-03-07

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  MATSUDA, Tsukasa

Inventor： MATSUDA, Tsukasa

IPC: C23C16/455

CPC classification number: C23C16/18 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873

Abstract: A method and system (1 ) for forming a variable thickness seed layer (102, 116) on a substrate (25, 100, 110) for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate (25, 100, 110) in a process chamber (10) containing a showerhead (30), with the center (106, 122) of the substrate (25, 100, 110) generally aligned with an inner gas delivery zone (32) of the showerhead (30) and the edge (104, 120) of the substrate (25, 100, 110) generally aligned with an outer gas delivery zone (34) of the showerhead (30). The method further includes depositing a seed layer (102, 116) on the substrate (25, 100, 110) by exposing the substrate (25, 100, 110) to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone (32), and exposing the substrate (25, 100, 110) to a second gas flowed through the outer gas delivery zone (34), whereby the seed layer (102, 116) is deposited with a thickness at the edge (104, 120) of the substrate (25, 100, 110) that is less than the thickness at the center (106, 122) of the substrate (25, 100, 110).

Abstract translation: 一种用于在随后的金属电化学电镀工艺的衬底（25,100,110）上形成可变厚度晶种层（102,116）的方法和系统（1），其中晶种层厚度分布改善了电镀金属层的均匀性 与使用恒定厚度种子层相比。 该方法包括在包含喷头（30）的处理室（10）中提供衬底（25,100,110），其中衬底（25,100,110）的中心（106,122）与内部 喷头（30）的气体输送区域（32）和基底（25,100,110）的边缘（104,120）大致与喷头（30）的外部气体输送区域（34）对齐。 该方法还包括通过将衬底（25,100,110）暴露于包含含有金属的前体的第一气体而将基底层（102,116）沉积在衬底（25,100,110）上，该第一气体流过内部气体输送 区域（32），并且将衬底（25,100,110）暴露于流过外部气体输送区域（34）的第二气体，由此种子层（102,116）在边缘（104）处沉积厚度 ，基底（25,100,110）的厚度小于衬底（25,100,110）的中心（106,122）处的厚度。

公开(公告)号：WO2006057708A3

公开(公告)日：2006-09-21

申请号：PCT/US2005035581

申请日：2005-10-03

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  VUKOVIC MIRKO

Inventor： VUKOVIC MIRKO

IPC: C23C16/16 ,  C23C16/448 ,  C23C16/52

CPC classification number: C23C16/16 ,  C23C16/4481 ,  C23C16/52

Abstract: Improved measurement accuracy for determining the flow rate of precursor vapor to the deposition tool, particularly for use with low vapor pressure precursors, such as ruthenium carbonyl (Ru 3 (CO) 12 ) or rhenium carbonyl (Re 2 (CO) 10 ). In one embodiment, the system (1, 100) includes a differential pressure manometer provided for measuring the flow rate. A method of measurement and calibration is also provided.

Abstract translation: 提高测量精度以确定蒸汽沉积工具前体蒸汽的流速，特别是用于低蒸气压前驱物如羰基钌（Ru _{（CO） 12 ）或羰基铼（Re （CO） 10 ）。 在一个实施例中，系统（1,100）包括被提供用于测量流量的差压压力计。 还提供了一种测量和校准方法。}

公开(公告)号：WO2006088560A1

公开(公告)日：2006-08-24

申请号：PCT/US2005/047343

申请日：2005-12-29

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  HANSEN, Brandon ,  LOWE, Marie

Inventor： HANSEN, Brandon ,  LOWE, Marie

IPC: B08B7/00 ,  C11D11/00

CPC classification number: B08B7/0021 ,  C11D7/08 ,  C11D11/0047

Abstract: A method and system (100, 200) is described for treating a substrate (105, 205) with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fluorosilicic acid.

Abstract translation: 描述了用高压流体（例如超临界状态的二氧化碳）处理衬底（105,205）的方法和系统（100,200）。 将工艺化学物质引入用于处理基材表面的高压流体中。 工艺化学包括氟硅酸。

公开(公告)号：WO2006057706A2

公开(公告)日：2006-06-01

申请号：PCT/US2005/035429

申请日：2005-10-03

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  SUZUKI, Kenji

Inventor： SUZUKI, Kenji

IPC: C23C16/16

CPC classification number: H01L21/76846 ,  C23C16/16 ,  H01L21/28556

Abstract: A method (300) and a deposition system (1, 100) for increasing deposition rates of metal layers (440, 460) from metal-carbonyl precursors (52, 152) using CO gas and a dilution gas. The method (300) includes providing a substrate (25, 125, 400, 402) in a process chamber (10, 110) of a processing system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, diluting the process gas in the process chamber (10, 110), and exposing the substrate (25, 125, 400, 402) to the diluted process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process. The deposition system (1, 100) contains a substrate holder (20, 120) configured for supporting and heating a substrate (25, 125, 400, 402) in a process chamber (10, 110) having a vapor distribution system (30, 130), a precursor delivery system (105) configured for forming a process gas containing a metal-carbonyl precursor vapor and a CO gas and for introducing the process gas to the vapor distribution system (30, 130), a dilution gas source (37, 137) configured for adding a dilution gas to the process gas in the process chamber (10, 110), and a controller (165) configured for controlling the deposition system (1, 100) during exposure of the substrate (25, 125, 400, 402) to the diluted process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.

Abstract translation: 一种用于使用CO气体和稀释气体从金属羰基前体（52,152）提高金属层（440,460）的沉积速率的方法（300）和沉积系统（1,100）。 方法（300）包括在处理系统（1,100）的处理室（10,110）中提供衬底（25,125,400,402），形成含有羰基金属前体蒸气和 CO气体，稀释处理室（10,110）中的工艺气体，以及将衬底（25,125,400,402）暴露于稀释工艺气体，以将金属层（440,460）沉积在衬底（25）上 ，125,400,402）通过热化学气相沉积工艺。 沉积系统（1,100）包括衬底保持器（20,120），衬底保持器（20,120）被配置为支撑和加热处理室（10,110）中的衬底（25,125,400,402），所述处理室具有蒸气分配系统 130），前体输送系统（105），其被配置用于形成含有羰基金属前体蒸气和CO气体的工艺气体，并用于将所述工艺气体引入所述蒸气分配系统（30,130）;稀释气体源 ，137），被配置为将稀释气体添加到所述处理室（10,110）中的处理气体;以及控制器（165），被配置为在所述基板（25,125）暴露期间控制所述沉积系统（100） 400,402）与稀释的工艺气体通过热化学气相沉积工艺将金属层（440,460）沉积在衬底（25,125,400,402）上。

公开(公告)号：WO2005076075A3

公开(公告)日：2006-04-27

申请号：PCT/US2005002064

申请日：2005-01-19

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  KAUSHAL SANJEEV ,  PANDEY PRADEEP ,  SUGASHIMA KENJI

Inventor： KAUSHAL SANJEEV ,  PANDEY PRADEEP ,  SUGASHIMA KENJI

IPC: G03F1/00 ,  F23N1/00 ,  G03F20060101 ,  G03F1/14 ,  G03F7/20

CPC classification number: G03F1/68 ,  G03F1/78 ,  H01L21/67248

Abstract: An adaptive real time thermal processing system is presented that includes a multivariable controller (260). Generally, the method (1600) includes creating a dynamic model of the thermal processing system (1630); incorporating reticle/mask curvature in the dynamic model; coupling a diffusion-amplification model into the dynamic thermal model; creating a multivariable controller; parameterizing the nominal setpoints into a vector of intelligent setpoints (1650); creating a process sensitivity matrix; creating intelligent setpoints using an efficient optimization method and process data; and establishing recipes that select appropriate models and setpoints during run-time.

Abstract translation: 提出了一种包括多变量控制器（260）的自适应实时热处理系统。 通常，方法（1600）包括创建热处理系统（1630）的动态模型; 在动态模型中结合掩模/掩模曲率; 将扩散扩增模型耦合到动态热模型中; 创建一个多变量控制器; 将标称设定值参数化为智能设定值的向量（1650）; 创建一个过程敏感性矩阵; 使用有效的优化方法和过程数据创建智能设定点; 并建立在运行期间选择合适的模型和设定值的配方。

公开(公告)号：WO2006019438A2

公开(公告)日：2006-02-23

申请号：PCT/US2005/014218

申请日：2005-04-26

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  JOE, Raymond

Inventor： JOE, Raymond

IPC: H01L21/31

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/345 ,  C23C16/452 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3125 ,  H01L21/3185

Abstract: A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate (40,125). The method includes providing a substrate (40, 125) in a process chamber (10, 110), exciting a reactant gas in a remote plasma source (94, 205), thereafter mixing the excited reactant gas with a silazane precursor gas, and depositing a silicon-nitrogen-containing film on the substrate (40, 125) from the excited gas mixture in a chemical vapor deposition process. In one embodiment of the invention, the reactant gas can contain a nitrogen-containing gas to deposit a SiCNH film. In another embodiment of the invention, the reactant gas can contain an oxygen-containing gas to deposit a SiCNOH film.

Abstract translation: 一种用于衬底上的含硅氮膜的低温等离子体增强化学气相沉积的方法（40,125）。 该方法包括在处理室（10,110）中提供衬底（40,125），在远程等离子体源（94,205）中激发反应物气体，然后将激发的反应物气体与硅氮烷前体气体混合，并沉积 在化学气相沉积工艺中在激发的气体混合物上的衬底（40,125）上形成含有硅 - 氮的膜。 在本发明的一个实施例中，反应气体可以含有含氮气体以沉积SiCNH膜。 在本发明的另一个实施例中，反应气体可以含有含氧气体以沉积SiCNOH膜。

公开(公告)号：WO2006009667A2

公开(公告)日：2006-01-26

申请号：PCT/US2005020808

申请日：2005-06-14

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  BRCKA JOZEF

Inventor： BRCKA JOZEF

IPC: C23C14/04 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/046 ,  C23C14/3492 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3405 ,  H01J37/3455 ,  H01J2237/3327

Abstract: This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source (15). A deposition process step is performed in which metal vapor is produced from a target (25) of a PVD source (20). Location and sputter efficiency at the target surface is enhanced by moving a magnet (34) pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30

Abstract translation: 本发明涉及半导体晶片的离子化PVD处理，并为单个处理室内的高纵横比（HAR）特征提供了高度均匀的沉积蚀刻工艺顺序和覆盖能力的条件。 通过电感耦合等离子体（ICP）源（15）产生和维持等离子体。 执行沉积工艺步骤，其中从PVD源（20）的靶（25）产生金属蒸气。 通过移动磁体（34）包以产生行进或扫掠的磁场包络来增强目标表面处的位置和溅射效率。 目标由直流电源通电，并且在沉积期间，在腔室内维持对溅射原子（30

公开(公告)号：WO2005103321A3

公开(公告)日：2006-01-19

申请号：PCT/US2005005869

申请日：2005-02-23

Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  CERIO FRANK M JR ,  FAGUET JACQUES ,  GITTLEMAN BRUCE D ,  ROBINSON RODNEY L

Inventor： CERIO FRANK M JR ,  FAGUET JACQUES ,  GITTLEMAN BRUCE D ,  ROBINSON RODNEY L

IPC: C23C14/02 ,  C23C14/04 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/2855 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3492 ,  H01J37/32706 ,  H01J2237/3327 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1078 ,  H01L2221/1089

Abstract: An iPVD System (200) is programmed to deposit uniform material, such as barrier material (912), into high aspect ratio nano-size features (11) on semiconductor substrates (21) using a process which enhances the sidewall (16) coverage compared to the field (10) and bottom (15) coverage(s) while minimizing or eliminating overhang (14) within a vacuum chamber (30). The iPVD system (200) is operated at low target power and high pressure >50mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

Abstract translation: iPVD系统（200）被编程为使用增强侧壁（16）覆盖的过程将诸如阻挡材料（912）的均匀材料沉积到半导体衬底（21）上的高纵横比纳米尺寸特征（11）中 （10）和底部（15）覆盖，同时最小化或消除真空室（30）内的悬垂（14）。 iPVD系统（200）以低目标功率和高压> 50mT运行，以从目标溅射材料。 RF能量耦合到腔室中以形成高密度等离子体。 可以应用小的RF偏压（小于几伏）来帮助增强覆盖范围，特别是在底部。

公开(公告)号：WO2005104186A3

公开(公告)日：2005-11-03

申请号：PCT/US2005/002460

申请日：2005-01-26

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KOSTENKO, John, Williams ,  O'MEARA, David, L.

Inventor： KOSTENKO, John, Williams ,  O'MEARA, David, L.

IPC: H01J37/32 ,  C23C16/44

Abstract: A method for plasma-enhanced cleaning of a system component (21, 25, 26, 35, 94, 104, 112, 116, 126) in a batch-type processing system and a method for monitoring and controlling the cleaning. The cleaning is performed by introducing a cleaning gas in a process chamber (10, 102) of the batch-type processing system (1, 100), forming a plasma by applying power to a system component (21, 25, 26, 35, 94, 104, 112, 116, 126) within the process chamber (10, 102), exposing a material deposit in the process chamber (10, 102) to the plasma to form a volatile reaction product, and exhausting the reaction product from the processing system (1, 100). Monitoring of the processing system (1, 100) can be carried out to determine cleaning status of the processing system (1, 100) and based upon the status from the monitoring, the processing system (1, 100) is controlled for either continuing the exposing and monitoring or stopping the cleaning process. A batch-type processing system (1, 100) is provided that allows plasma-enhanced cleaning of system components (21, 25, 26, 35, 94, 104, 112, 116, 126), and a system (1, 100) is provided with monitoring and controlling capability.