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公开(公告)号：KR1020130042858A
公开(公告)日：2013-04-29
申请号：KR1020110106978
申请日：2011-10-19
Applicant: 삼성전자주식회사
IPC: G01J5/44 , H01L31/101
CPC classification number: G01J5/44
Abstract: PURPOSE: A temperature sensing device and a method are provided to improve temperature sensing sensitivity by using a temperature sensing layer in which a specific impurity is doped. CONSTITUTION: A temperature sensing device comprises electrode films(105,107), a piezoelectric layer(106), and a temperature sensing layer. The electrode films are formed at an upper part of a substrate by being separated at regular intervals. The piezoelectric layer converts an electric signal into an elastic wave. The temperature sensing layer is formed at a structure formed at the upper part of the substrate and is doped with a specific impurity.
Abstract translation: 目的：提供一种温度感测装置和方法，通过使用其中掺杂特定杂质的温度感测层来提高温度感测灵敏度。 构成：温度感测装置包括电极膜（105,107），压电层（106）和温度感测层。 电极膜通过以规则的间隔分开形成在基板的上部。 压电层将电信号转换为弹性波。 温度感测层形成在衬底的上部形成的结构，并掺杂有特定的杂质。
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公开(公告)号：KR101238360B1
公开(公告)日：2013-03-04
申请号：KR1020060077224
申请日：2006-08-16
Applicant: 삼성전자주식회사
IPC: H03H9/15
CPC classification number: H03H3/02 , H03H9/02118 , H03H9/173 , H03H2003/021
Abstract: 본 발명의 공진기는, 기판, 및 기판상에 차례로 적층된 제1전극, 압전막 및 제2전극을 구비하고, 공진을 발생하는 활성영역과 공진을 발생하지 않은 비활성영역으로 구분된 공진부를 포함하며, 제1 및 제2전극 중 적어도 하나는 비활성영역 부분의 적어도 일부가 비활성영역 부분과 다른 두께를 가지도록 형성된 것을 특징으로 한다.
FBAR, 공진부, 전극, 비활성영역, 금속막-
公开(公告)号：KR1020130015785A
公开(公告)日：2013-02-14
申请号：KR1020110078009
申请日：2011-08-05
Applicant: 삼성전자주식회사
CPC classification number: H03H9/02086 , H03H9/0211 , H03H9/02125 , H03H9/132
Abstract: PURPOSE: A volume acoustic resonator is provided to control electro-acoustic coupling coefficients by using capacitance generated between a volume acoustic resonating part and a ground plane. CONSTITUTION: An anti-resonance frequency changing part(120) is located at a fixed distance from a volume acoustic resonating part(110). The volume acoustic resonating part includes a first electrode(210), a piezoelectric layer(220), and a second electrode(230). The anti-resonance frequency changing part includes ground planes(241,251), a piezoelectric layer, and ground planes(243,253). Fringe capacitance is generated between the fringe of the first electrode and the fringe of the second electrode. The ground planes are formed in a shape symmetrical to the first electrode.
Abstract translation: 目的：提供体积声共振器以通过使用在体积声共振部分和接地平面之间产生的电容来控制电声耦合系数。 构成：反谐振频率改变部分（120）位于与体积声共振部分（110）固定的距离处。 音量声谐振部分包括第一电极（210），压电层（220）和第二电极（230）。 反共振频率变化部包括接地面（241,251），压电层和接地面（243,253）。 在第一电极的边缘和第二电极的边缘之间产生边缘电容。 接地面形成为与第一电极对称的形状。
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公开(公告)号：KR1020120026663A
公开(公告)日：2012-03-20
申请号：KR1020100088679
申请日：2010-09-10
Applicant: 삼성전자주식회사
IPC: H03H7/12
Abstract: PURPOSE: A tunable filter apparatus is provided to obtain a desired bandwidth and a center frequency by selecting at least one from preset multi-bands through a variable BPF(Band Pass Filter) or a variable BSF(Band Stop Filter). CONSTITUTION: A tunable filter apparatus(100) includes a multiband BPF(Band Pass Filter)(110) and a variable BPF(120). The multiband BPF passes through only a plurality of frequency bands having a preset form from received signals. The multiband BPF is used as a filter passing through the multiband having 3 bands. Each band is designed to be a desired bandwidth and center frequency. The variable BPF passes one band from the multiband outputted in the multiband BPF according to the control signal for selecting the band. The variable BPF is used as the filter passing through only one band from 3 different variable bands.
Abstract translation: 目的：提供一种可调谐滤波器装置，通过从预设的多频带通过变量BPF（带通滤波器）或可变BSF（频带阻塞滤波器）中选择至少一个来获得期望的带宽和中心频率。 构成：可调滤波器装置（100）包括多频带BPF（带通滤波器）（110）和可变BPF（120）。 多频带BPF从接收到的信号仅通过具有预设形式的多个频带。 多频带BPF用作通过具有3个频带的多频带的滤波器。 每个频段被设计为期望的带宽和中心频率。 可变BPF根据用于选择频带的控制信号，从多频带BPF中输出的多频带通过一个频带。 变量BPF用作滤波器，其通过来自3个不同可变带的仅一个频带。
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公开(公告)号：KR1020110045825A
公开(公告)日：2011-05-04
申请号：KR1020090102540
申请日：2009-10-28
Applicant: 삼성전자주식회사
IPC: H01P5/10
CPC classification number: H03H9/0095
Abstract: PURPOSE: A balun using a film bulk acoustic resonator is provided to reduce the difference of two outputs by using a FBAR(Film Bulk Acoustic Resonator). CONSTITUTION: In a balun using a film bulk acoustic resonator, a balune(100) comprises two transform units(110). The transform units comprise a thin film bulk acoustic resonator(FBAR)(120) and a passive device(130). The passive device is connected to the thin film bulk acoustic resonator.
Abstract translation: 目的：提供使用薄膜体声波谐振器的平衡 - 不平衡转换器，以通过使用FBAR（薄膜体声波谐振器）来减少两个输出的差异。 构成：在使用薄膜体声波谐振器的平衡 - 不平衡转换器中，平衡（100）包括两个变换单元（110）。 变换单元包括薄膜体声波谐振器（FBAR）（120）和无源器件（130）。 无源器件连接到薄膜体声波谐振器。
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Patent Agency Ranking
公开(公告)号：KR1020110040299A
公开(公告)日：2011-04-20
申请号：KR1020090097511
申请日：2009-10-14
Applicant: 삼성전자주식회사
CPC classification number: H04B1/0057 , H04B1/48 , H04W88/06
Abstract: PURPOSE: A communication apparatus for supporting multiband communication is provided to supply a duplex module which is able to support the multiband by using a single phase shifter. CONSTITUTION: A transmission signal filtering unit(210) filters an n numbers of multiband transmission signals. A first path setting unit(220) transfers one of the multiband transmission signals to an antenna unit(260). A phase shifter(230) splits the multiband transmission signal and the multiband reception signals by shifting the phase of the transferred multiband transmission signal. A second pant setting unit(240) connects the phase shifter to an n number of reception signal filters(250).
Abstract translation: 目的：提供一种用于支持多频带通信的通信装置，以提供能够通过使用单个移相器来支持多频带的双工模块。 构成：发送信号滤波单元（210）对n个多频带传输信号进行滤波。 第一路径设置单元（220）将多频带传输信号之一传送到天线单元（260）。 移相器（230）通过移位传输的多频带传输信号的相位来分离多频带传输信号和多频带接收信号。 第二裤子设定单元（240）将移相器连接到n个接收信号滤波器（250）。
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公开(公告)号：KR1020100055068A
公开(公告)日：2010-05-26
申请号：KR1020080113985
申请日：2008-11-17
Applicant: 삼성전자주식회사
IPC: H01P1/20
CPC classification number: H01P1/203 , H01P7/088 , H03H7/0161
Abstract: PURPOSE: The variable resonator including the meta material spirit and filter including the same interlinks the variable resonator including the meta material spirit as 2 shift. The resonant frequency variable range of the tunable device is exaggerated a lot. CONSTITUTION: The meta material(120) is connected to the transmission line(110). The meta material has the reversed phase of the transmission line and group velocity property of opposite. In the meta material under the above described conditions, the effective dielectric ratio and the fixed effective permeability altogether has the negative value.
Abstract translation: 目的：可变谐振器包括具有同质材料精神和过滤器的可变谐振器，其包括将包含元素材料精神的可变谐振器作为2位移相互连接。 可调谐设备的谐振频率可变范围被夸大了很多。 构成：超材料（120）连接到传输线（110）。 传播线的反相和群体速度特性相反。 在上述条件下的元素材料中，有效介电常数和固定有效磁导率共计为负值。
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公开(公告)号：KR1020090116169A
公开(公告)日：2009-11-11
申请号：KR1020080041935
申请日：2008-05-06
Applicant: 삼성전자주식회사
Inventor： 김덕환
IPC: H03D7/00
CPC classification number: H03D7/1441 , H03D7/1458 , H03D7/1491 , H03D2200/0025 , H03D2200/0043 , H03D2200/0084
Abstract: PURPOSE: A low voltage mixer with improved gain and linearity is provide to remove high voltage gain and even harmonic component by separating a DC bias of a transconductor and switching stage through a capacitor. CONSTITUTION: In a low voltage mixer with improved gain and linearity, a frequency mixer is separated into a transconductor(230) and a switching stage(240) by a capacitor(110). The transconductor is comprised of each of N-type MOS(218) and P-type MOS(224). The N-type MOS and the P-type MOS share a gate(220), and the N-type MOS and the P-type MOS receives RF signal through the gate. The N-type MOS and the P-type MOS share a drain(223), and the N-type MOS and the P-type MOS transmits an RF current to a switching stage through a capacitor connected to the drain. The RF current is applied to a transconductor from a switching stage to the transconductor according to a phase of the RF signal in the switching stage.
Abstract translation: 目的：提供增益和线性度改善的低压混频器，通过分离跨导体和开关级的直流偏置电容器来消除高电压增益和均匀谐波分量。 构成：在具有改进的增益和线性度的低压混频器中，通过电容器（110）将混频器分离成跨导体（230）和开关级（240）。 跨导体由N型MOS（218）和P型MOS（224）中的每一个构成。 N型MOS和P型MOS共享门（220），N型MOS和P型MOS通过栅极接收RF信号。 N型MOS和P型MOS共享漏极（223），N型MOS和P型MOS通过连接到漏极的电容器将RF电流发送到开关级。 根据开关级中的RF信号的相位，将RF电流从开关级施加到跨导体。
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公开(公告)号：KR1020060074076A
公开(公告)日：2006-07-03
申请号：KR1020040112700
申请日：2004-12-27
Applicant: 삼성전자주식회사
IPC: H01L29/00
CPC classification number: B81B7/007
Abstract: 본 발명에 의한 MEMS 소자 패키지는, MEMS 활성소자가 상면에 형성되어 있는 소자용 기판, MEMS 활성소자가 위치하는 공간을 제공하도록 MEMS 활성소자의 양측에 배치되며 MEMS 활성소자에 전기적으로 연결된 내부전극패드, 내부전극패드의 외곽에 배치되는 실링패드, 실링패드를 통하여 소자용 기판과 결합되며 내부전극패드에 위치하는 부분에 비아홀이 형성된 덮개용 기판, 그리고, 비아홀을 통하여 내부전극패드와 전기적인 접속을 이루도록 덮개용 기판의 상면에 형성된 외부전극패드를 포함한다. 내부전극패드와 실링패드는 Au으로 형성되며, 따라서, 소자용 기판과 덮개용 기판은 실링패드에 의해 Au-Au 다이렉트 본딩된다.
MEMS, 소자, 패키지, 웨이퍼, 기판, 비아홀, Au, 전극, 실링-
公开(公告)号：KR1020060052072A
公开(公告)日：2006-05-19
申请号：KR1020050093791
申请日：2005-10-06
Applicant: 삼성전자주식회사
CPC classification number: H03H9/0542 , H03H9/542 , H03H9/564 , H03H9/566
Abstract: 하나의 트리밍인덕터를 사용하는 필터가 개시된다. 본 필터는, 외부단자와 전기적 연결이 가능한 제1포트, 제2포트, 및, 접지포트가 상부 표면에 형성된 기판, 기판 상에서 제1포트 및 제2포트를 직렬로 연결하는 제1 및 제2 직렬공진기, 기판 상에서 제1포트 및 제1직렬공진기 사이에 형성되는 노드에 연결되는 제1병렬공진기, 기판 상에서 제1 및 제2 직렬공진기 사이에 형성되는 노드에 연결되는 제2병렬공진기, 및, 일측이 제1 및 제2 병렬공진기 각각과 연결되며, 타측이 접지포트에 연결되는 트리밍인덕터를 포함한다. 이에 따라, 소형의 고성능 필터를 구현할 수 있게 된다.
필터, 트리밍 인덕터, FBAR, 직렬공진기, 병렬공진기
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