公开(公告)号：KR1020010011136A

公开(公告)日：2001-02-15

申请号：KR1019990030373

申请日：1999-07-26

Applicant: 한국전자통신연구원

Inventor： 최성율 ,  백문철 ,  조경익 ,  허진 ,  한기평

IPC: H01J1/30 ,  C01B31/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J1/30 ,  C01B32/05

Abstract: PURPOSE: A triode-type field emitter is provided to drive at a low voltage and to have arranged nano structures. CONSTITUTION: A gate electrode(15) is formed on a first substrate(10). An insulating layer(14) to cover the gate electrode is formed thereon. A metal separating layer is formed on the insulating layer. A seed metal layer(12) of nano structure is physically deposited on the first substrate. A nano structure(13) is grown on the metal layer. The metal separating layer is separated. A second substrate having a cathode electrode(11) is prepared thereon. The second substrate is formed in the result of the first substrate to contact the nano structure with the cathode electrode. The nano structure is transited to the second substrate by removing the first substrate. The seed metal layer is removed and the part of the insulating layer is etched to expose a sidewall of the gate electrode.

Abstract translation: 目的：提供三极管型场发射器，以低电压驱动并布置纳米结构。 构成：在第一基板（10）上形成栅电极（15）。 在其上形成覆盖栅电极的绝缘层（14）。 在绝缘层上形成金属分离层。 纳米结构的种子金属层（12）物理沉积在第一基底上。 在金属层上生长纳米结构（13）。 分离金属分离层。 制备具有阴极电极（11）的第二基板。 第二衬底由第一衬底的结果形成，以使纳米结构与阴极接触。 通过去除第一衬底将纳米结构转移到第二衬底。 去除种子金属层，并蚀刻绝缘层的一部分以露出栅电极的侧壁。

公开(公告)号：KR100270334B1

公开(公告)日：2000-12-01

申请号：KR1019970064080

申请日：1997-11-28

Applicant: 한국전자통신연구원

Inventor： 최성우 ,  남기수 ,  이해권 ,  심규환 ,  백문철

IPC: H01L21/20

Abstract: PURPOSE: An adaptor for an epitaxial apparatus is provided to prevent air pollution of a vacuum chamber, by repairing broken parts or exchanging raw materials induced to the vacuum chamber while maintaining the vacuum state of the vacuum chamber and eliminating the vacuum state in a local portion. CONSTITUTION: A switching unit induces and maintains vacuum, mounted in a flange of an inlet of a vacuum chamber. A bellows-type adaptor(13) extends and contracts to eliminate only local vacuum between the switching unit and a flange of a crucible. A flange is mounted in upper and lower portion of the bellow-type adaptor. One side of a guide bar(17) is fixed in an upper flange of the adaptor, and the other side of the guide bar penetrates a lower flange of the adaptor. A length control unit(16) is mounted in the guide bar penetrating the lower flange of the adaptor.

Abstract translation: 目的：提供一种用于外延设备的适配器，以通过在保持真空室的真空状态并且消除局部部分中的真空状态的同时修复破碎的部件或更换感应到真空室的原料来防止真空室的空气污染 。 构成：开关单元引导和维持真空，安装在真空室入口的法兰中。 波纹管式适配器（13）延伸和收缩，以消除开关单元和坩埚的凸缘之间的仅局部真空。 波纹管式适配器的上部和下部安装有法兰。 引导杆（17）的一侧固定在适配器的上凸缘中，导杆的另一侧穿过适配器的下凸缘。 长度控制单元（16）安装在引导杆中，穿过适配器的下凸缘。

公开(公告)号：KR100258180B1

公开(公告)日：2000-06-01

申请号：KR1019970045655

申请日：1997-09-03

Applicant: 한국전자통신연구원

Inventor： 남기수 ,  백문철

IPC: G02B5/00

Abstract: PURPOSE: A micro-convergent mirror manufacturing method is provided to enhance convergence and condensing capability of a micro-electromotive device by forming a micro-convergent mirror on the micro-electromotive device. CONSTITUTION: The first and second oxide films(2,3) are layered on a silicon substrate(1). A photosensitive film is coated on the second oxide film(3) with a circular hole. The oxide films(2,3) are etched to form a recess with a cross section shaped as an ellipse. The photosensitive film is removed, and an aluminum film is deposited on an etched face of the ellipse to form a mirror reflective layer. An aluminum thin film(6) is coated on the ellipse to form a convergent mirror. The aluminum thin film(6) is made as thin as possible to maintain the sphericity of the mirror. A transparent thin film is coated on the aluminum thin film(6) to protect the aluminum thin film(6).

Abstract translation: 目的：提供一种微聚光镜制造方法，通过在微电动装置上形成微会聚反射镜，提高微电动装置的会聚和冷凝能力。 构成：第一和第二氧化物膜（2,3）层叠在硅衬底（1）上。 在圆形孔的第二氧化膜（3）上涂布感光性膜。 氧化膜（2,3）被蚀刻以形成具有椭圆形的截面的凹部。 除去感光性膜，在该椭圆形蚀刻面上沉积铝膜，形成镜面反射层。 在椭圆上涂覆铝薄膜（6）以形成会聚反射镜。 铝薄膜（6）制成尽可能薄，以保持反射镜的球形度。 在铝薄膜（6）上涂覆透明薄膜以保护铝薄膜（6）。

公开(公告)号：KR1020000020020A

公开(公告)日：2000-04-15

申请号：KR1019980038422

申请日：1998-09-17

Applicant: 한국전자통신연구원

Inventor： 심규환 ,  백문철 ,  조경익

IPC: H01L33/00 ,  H01L21/205

CPC classification number: H01L33/26 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/06 ,  Y10S438/931 ,  Y10S438/954

Abstract: PURPOSE: An apparatus is provided to fabricate short wavelength photoelectric conversion devices, including an epitaxial layer of a mixed crystal compound of (SiC)x(AlN)1-x that has a uniform atomic structure and permits low-temperature deposition, is provided. CONSTITUTION: A PA-MOMBE(plasma-assisted metal organic molecular beam epitaxy) system is provided, which includes a chamber, a first plasma source cell, an ammonia source, and a second plasma source cell. The inner space of the chamber remains in a high vacuum state. The chamber is supplied with 1,3 disilanebutane, as a SiC source gas, from the first plasma source cell, and with nitrogen gas, as an AlN source gas, from the second plasma source cell. The chamber is also supplied with ammonia from the ammonia source cell. An organic aluminum is provided to the chamber, and reacts with the nitrogen gas or the ammonia to produce AlN.

Abstract translation: 目的：提供一种制造短波长光电转换装置的装置，其包括具有均匀原子结构并允许低温沉积的（SiC）x（AlN）1-x的混晶化合物的外延层。 构成：提供了一种PA-MOMBE（等离子体辅助金属有机分子束外延）系统，其包括室，第一等离子体源电池，氨源和第二等离子体源电池。 室的内部空间保持在高真空状态。 从第一等离子体源电池向室提供1,3-二硅烷丁烷作为SiC源气体，并从第二等离子体源电池供给作为AlN源气体的氮气。 该室还从氨源电池中提供氨。 向室内提供有机铝，并与氮气或氨反应产生AlN。

公开(公告)号：KR1019930014831A

公开(公告)日：1993-07-23

申请号：KR1019910022925

申请日：1991-12-13

Applicant: 한국전자통신연구원

Inventor： 백문철 ,  권오준

IPC: H01L21/31

Abstract: 본 발명은 고집적 반도체 장치의 제조시에 활용되는 2중 다결정 실리콘층 형성공정에 있어서 층들간의 절연체인 산화막의 전기적 특성을 안정화시키기 위한 층간 산화막 형성방법에 관한 것으로 저압화학 증착법(LPCVD)을 이용하여 층간산화막(8)을 형성함으로써 층간산화막(8)이 일정한 두께를 유지하여 단차의 유무에 상관없이 안정된 축전특성을 갖게 된다.

公开(公告)号：KR1019930013676A

公开(公告)日：1993-07-22

申请号：KR1019910024267

申请日：1991-12-24

Applicant: 한국전자통신연구원

Inventor： 백문철 ,  조경익 ,  권오준

IPC: G01B7/16

Abstract: 내용 없음