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公开(公告)号：KR1020160134977A
公开(公告)日：2016-11-24
申请号：KR1020150067300
申请日：2015-05-14
Applicant: 한국전자통신연구원
CPC classification number: G06Q10/08
Abstract: 본발명의일면에따른화물적재시스템은화물이적재되는화물칸; 상기화물의정보를인식하는화물정보인식장치; 상기화물칸에상기화물을적재하는화물칸제어기; 및상기화물정보인식장치에의해획득한화물정보를전송받고, 상기화물정보에의해상기화물칸내의상기화물의위치를결정하고, 상기결정에따라상기화물을상기위치에적재할것을상기화물칸제어기에명령하는운영관리서버; 를포함하는것을특징으로한다. 본발명의다른일면에따른화물적재방법은화물의정보를인식하는단계; 상기정보에따라상기화물의적재위치를결정하는단계; 및상기적재위치에따라기설정된구역에상기화물을적재하는단계;를포함하는것을특징으로한다.
Abstract translation: 用于装载货物的系统包括装载货物的货物舱，识别关于货物物品的信息的货物信息识别装置，将货物装载到货物舱中的货物舱控制器，以及管理和 收到由货物信息识别装置取得的货物信息的管理服务器，基于货物信息确定货物在货舱中的位置，并指示货舱控制器根据该确定将货物装载在该位置 。 一种装载货物的方法包括识别关于货物的信息，根据该信息确定货物的装载位置，以及根据装载位置将货物装入预设区域。
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公开(公告)号：KR100644811B1
公开(公告)日：2006-11-14
申请号：KR1020050116825
申请日：2005-12-02
Applicant: 한국전자통신연구원
IPC: H01L21/335
Abstract: An FET(Field Effect Transistor) is provided to increase an on-current of the FET itself and to improve a threshold voltage by using a germanium material as a channel forming material. A semiconductor layer(120) is formed on an insulating layer(110). The semiconductor layer is composed of a source region(130), a drain region(140) and a channel region(150) between the source and the drain region. A potential barrier is formed at a predetermined portion between the source region and the channel region to be changed according to an operation state. A gate(170) is formed on the channel region via a gate insulating layer(160). The channel region is made of one selected from a group consisting of germanium, germanium silicon and silicon.
Abstract translation: 提供FET（场效应晶体管）以增加FET本身的导通电流并通过使用锗材料作为沟道形成材料来提高阈值电压。 半导体层（120）形成在绝缘层（110）上。 半导体层由在源极和漏极区域之间的源极区域（130），漏极区域（140）和沟道区域（150）组成。 根据操作状态，在源区和沟道区之间的预定部分处形成势垒以改变。 栅极（170）经由栅极绝缘层（160）形成在沟道区域上。 沟道区由从锗，锗硅和硅组成的组中选择的一种制成。
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公开(公告)号：KR100461505B1
公开(公告)日：2004-12-14
申请号：KR1020020011404
申请日：2002-03-04
Applicant: 한국전자통신연구원
IPC: H01L21/84
Abstract: PURPOSE: A method for manufacturing a nitride semiconductor substrate is provided to be capable of reducing manufacturing costs and increasing the area. CONSTITUTION: A buffer layer(11) made of an aluminum nitride(AlN) film is formed on a silicon substrate(10) for buffering lattice mismatch by using MBE(Molecular Bean Epitaxy). An oxide layer(11a) is formed on the buffer layer(11) by performing thermal oxidation processing. A nitride layer(12) is formed on the oxide layer(11a). Then, the silicon substrate(10) is removed.
Abstract translation: 目的：提供一种用于制造氮化物半导体衬底的方法，以能够降低制造成本和增加面积。 构成：在硅衬底（10）上形成由氮化铝（AlN）膜制成的缓冲层（11），以通过使用MBE（分子束外延）缓冲晶格失配。 通过执行热氧化处理在缓冲层（11）上形成氧化物层（11a）。 在氧化物层（11a）上形成氮化物层（12）。 然后，去除硅衬底（10）。
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公开(公告)号：KR1020000039536A
公开(公告)日：2000-07-05
申请号：KR1019980054893
申请日：1998-12-14
IPC: C04B35/462
CPC classification number: H01B3/12 , C04B35/457 , C04B35/49
Abstract: PURPOSE: A composition for a dielectric ceramic and a microwave dielectric ceramic are provided, to increase the dielectric constant and the quality factor of the dielectric ceramic and to allow the temperature coefficient of resonant frequency to be controlled easily. CONSTITUTION: A composition for a dielectric ceramic comprises 100 parts by weight of the main composition consisting of 25-43 wt% of TiO2, 39-57 wt% of ZrO2 and 7-28 wt% of SnO2; 0.2-8.0 parts by weight of the Ca-containing material selected from CaCO3, CaTiO3 and CaZrO3; and optionally 0.2-5.0 parts by weight of Nb2O5. The dielectric ceramic is prepared by sintering the composition for a dielectric ceramic at the temperature of 1,300-1,400°C, and has the dielectric constant being 30-45, the product of resonant frequency and quality factor (f0 X Q) being more than 30,000 GHz and the temperature coefficient of resonant frequency (tau_f) in the range of -15 ppm/°C to +35 ppm/°C.
Abstract translation: 目的：提供介电陶瓷和微波介电陶瓷的组合物，以增加电介质陶瓷的介电常数和品质因数，并使谐振频率的温度系数容易控制。 构成：用于电介质陶瓷的组合物包含100重量份的主要组合物，其由25-43重量％的TiO 2，39-57重量％的ZrO 2和7-28重量％的SnO 2组成; 0.2-8.0重量份选自CaCO3，CaTiO3和CaZrO3的含Ca材料; 和任选的0.2-5.0重量份的Nb 2 O 5。 电介质陶瓷通过烧结介电陶瓷组合物在1,300-1,400℃的温度下制备，介电常数为30-45，谐振频率和品质因子（f0 XQ）的乘积大于30,000GHz 和谐振频率（τ_f）的温度系数在-15ppm /℃至+ 35ppm /℃的范围内。
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公开(公告)号：KR1019950001755B1
公开(公告)日：1995-02-28
申请号：KR1019920010014
申请日：1992-06-10
Applicant: 한국전자통신연구원
IPC: H01L21/76
Abstract: The isolating method of a semiconductor device comprises (a) depositing a first oxide film (12) and a nitride film (13) on the silicon substrate (11) in order, (b) covering a photoresist (15), and etching the film (13) by the photolithography to form a device-isolating pattern, (c) impregnating impurities into the substrate (11) to form a channel stop layer, (d) depositing a polysilicon film (16) of 100-400nm, (e) polishing the film (16) to form a polished polysilicon film (17), (f) growing the polyoxide film (18) by the oxidation of the film (17), and etching back the film (18) upto the surface of the film (13) to form a field oxide film (19), and (g) etching back the film (19) to remove the films (12,13) and to form an oxide (20). The method gives a removal of a birds beak generating in the LOCOS process.
Abstract translation: 半导体器件的隔离方法包括：（a）在硅衬底（11）上沉积第一氧化膜（12）和氮化物膜（13），（b）覆盖光致抗蚀剂（15），并蚀刻该膜 （13）通过光刻形成器件隔离图案，（c）将杂质浸渍到衬底（11）中以形成沟道阻挡层，（d）沉积100-400nm的多晶硅膜（16），（e） 抛光膜（16）以形成抛光的多晶硅膜（17），（f）通过膜（17）的氧化生长聚氧化物膜（18），并将膜（18）刻蚀到膜的表面 （13）以形成场氧化膜（19），（g）蚀刻膜（19）以除去膜（12,13）并形成氧化物（20）。 该方法可以清除LOCOS过程中产生的鸟喙。
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Patent Agency Ranking
公开(公告)号：KR100549445B1
公开(公告)日：2006-02-07
申请号：KR1019990031401
申请日：1999-07-30
Applicant: 한국전자통신연구원
IPC: G11B7/26
Abstract: 본 발명은 근접광과 기록매체의 상호작용을 이용한 새로운 읽기/쓰기 방식의 정보기록판독장치에 관한 것이다.
이러한 고집적 고속 정보기록판독장치는, 기록매체 표면과 인접하여 이동 가능한 슬라이더와; 상기 슬라이더에 장착되고 상기 기록매체의 국소부에 인접한 탐침; 상기 기록매체의 읽기 또는 쓰기 동작시 상기 기록매체의 국소부를 포함하는 영역에 전자기파를 조사하는 조사장치; 상기 기록매체의 쓰기 동작시 쓰기에너지를 생성하는 쓰기에너지 생성장치; 상기 슬라이더에 장착되고 상기 쓰기에너지를 상기 기록매체의 국소부에 전달하여 상기 기록매체의 국소부를 물리적으로 변화시켜서 쓰기 작용을 하는 쓰기에너지 전달물체; 및 상기 기록매체의 읽기 동작시 상기 탐침을 통해 상기 기록매체의 국소부에서 출력되는 전자기파의 물리적인 변화를 검출하여 읽기 작용을 하는 검출기를 포함한다.-
公开(公告)号：KR1020050059363A
公开(公告)日：2005-06-20
申请号：KR1020030091013
申请日：2003-12-13
Applicant: 한국전자통신연구원
IPC: G11B11/24
CPC classification number: G11B7/124 , G11B7/1353 , G11B7/257 , G11B2220/2537
Abstract: 본 발명은 나비 넥타이형 안테나와 집광 회절격자를 이용하여 높은 집속효과와 회절한계(λ/2) 이하의 미세 초점을 구현할 수 있어 정보 용량의 대형화를 이룰 수 있는 새로운 구조의 광 정보 기록 헤드를 제공한다. 이를 통해, 정보 기록용량의 대형화를 만족시킬 수 있으며 광 정보 기록헤드의 소형화로 기록속도 향상을 이룰 수 있다.
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公开(公告)号：KR1020030056573A
公开(公告)日：2003-07-04
申请号：KR1020010086835
申请日：2001-12-28
Applicant: 한국전자통신연구원
IPC: G01B11/26
CPC classification number: G01B11/26
Abstract: PURPOSE: A measuring apparatus for a slant angle of a SIL(Solid Immersion Lens) is provided to prevent a focal signal from generating error by measuring a slant degree of the SIL quantitatively with a principle of a collimator. CONSTITUTION: A measuring apparatus for a slant angle of a SIL(Solid Immersion Lens,211) comprises a light generating device(201), a first condenser(203) and a position sensing device(210). The light generating device generates light when projecting to the SIL formed like a hemisphere. The first condenser collects light reflected from a specular surface(208) on a lower portion of the SIL. The position sensing device measures a slant of the SIL according to a focus collected by the first condenser. A light divider(202) is included to project light generated from the light generating device to the first condenser and to progress light horizontally inside the SIL. Therefore, the focus of the SIL is formed correctly by measuring the slant of the SIL and compensating the slant with measured value.
Abstract translation: 目的：提供用于SIL（固体浸没透镜）的倾斜角的测量装置，以通过用准直器的原理定量测量SIL的倾斜度来防止焦点信号产生误差。 构造：用于SIL（固体浸没透镜211）的倾斜角度的测量装置包括发光装置（201），第一冷凝器（203）和位置感测装置（210）。 当投射到如半球形状的SIL时，发光装置产生光。 第一冷凝器收集从SIL的下部的镜面（208）反射的光。 位置检测装置根据由第一冷凝器收集的焦点测量SIL的倾斜度。 包括分光器（202）以将从发光装置产生的光投射到第一冷凝器，并在SIL内水平地进行光。 因此，通过测量SIL的斜度并用测量值补偿斜面，SIL的重点正确形成。
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公开(公告)号：KR100353863B1
公开(公告)日：2003-01-24
申请号：KR1019980037412
申请日：1998-09-10
IPC: C04B35/46
CPC classification number: C04B35/49
Abstract: A microwave dielectric ceramic composition is fabricated by adding one selected from a material containing Ba and a material containing Sr or a mixture of a material containing Ba and a material containing Sr to a composition formed of 25 DIFFERENCE 43 wt % of TiO2, 39-57 wt % of ZrO2, and 7-28 wt % of SnO2 as an additive, wherein the additive is added by 0.2 DIFFERENCE 8.0 wt % based on the total amount of the composition, and is capable of implementing a high dielectric constant and quality factor by sintering at a temperature of 1250 DIFFERENCE 1400 DEG C.
Abstract translation: 微波介质陶瓷组合物通过将由选自包含Ba的材料和包含Sr的材料或包含Ba的材料和包含Sr的材料的混合物中的一种添加到由以下组成的组合物中：43重量％TiO 2，39-57 （重量）的ZrO2和7-28％（重量）的SnO2作为添加剂，其中该添加剂以组合物总量的0.2重量％添加8.0重量％，并且能够实现高介电常数和品质因数 在1250℃的温度下烧结差异1400℃
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公开(公告)号：KR1020010076618A
公开(公告)日：2001-08-16
申请号：KR1020000003869
申请日：2000-01-27
Applicant: 한국전자통신연구원
IPC: G11B7/00
Abstract: PURPOSE: A multi optical recording device is provided to increase a recording speed and a transferring speed according to number of focuses through recording/reproducing information on multiple tracks. CONSTITUTION: A beam progresses from a multi light source a suspension(120) by passing through a beam splitter and an optical waveguide(160). Then, the beam is transferred to an optical probe. A reflected beam progresses to an optical detector by passing through the optical waveguide and the beam splitter. Herein, the suspension is rotated centering upon a rotating shaft to connect information. A flying head body(171) is attached at an end of the suspension. Herein, the flying head is formed by a reflecting mirror(172), lenses(173,174) for concentrating beam reflected on the reflecting mirror, and an SIL(Solid Immersion Lens)(175) forming focuses of beam passed from the lenses.
Abstract translation: 目的：提供一种多光记录装置，通过在多个轨迹上记录/再现信息，根据焦点的数量增加记录速度和传送速度。 构成：光束通过穿过分束器和光波导（160）从多光源进入悬架（120）。 然后，将光束传送到光学探针。 反射光束通过光波导和分束器前进到光学检测器。 这里，悬架以旋转轴为中心旋转以连接信息。 悬挂头的一端附接有飞头体（171）。 这里，飞头由反射镜（172），用于集中反射在反射镜上的光束的透镜（173,174）和形成从透镜通过的光束的光束（Solid Immersion Lens）（175）形成。
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