公开(公告)号：DE10022655C2

公开(公告)日：2002-03-07

申请号：DE10022655

申请日：2000-04-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUENTHER ,  HARTNER WALTER ,  SCHNABEL RAINER-FLORIAN

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01G4/33 ,  H01G4/40

Abstract: The invention relates to a method for producing at least one capacitor structure, comprising the following steps: providing a substrate, producing a first electrode on said substrate, producing a mask, whereby the first electrode is disposed in an opening of said mask, and applying at least one dielectric layer and at least one conductive layer for a second eletrode. The surface of the part of the conductive layer that is applied in the opening of the mask is substantially disposed below the surface of the mask. The conductive layer and the dielectric layer are structured by polishing so that a capacitor structure is produced.

公开(公告)号：DE59900238D1

公开(公告)日：2001-10-11

申请号：DE59900238

申请日：1999-11-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUENTHER DR ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507

公开(公告)号：DE10001118A1

公开(公告)日：2001-07-26

申请号：DE10001118

申请日：2000-01-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER ,  KASTNER MARCUS

IPC: H01L21/8242 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/108

Abstract: Production of a semiconductor component involves forming switching transistor (2) on semiconductor substrate, applying a first insulating layer (4) to the transistor, applying a storage capacitor (3) containing a lower (31) and an upper electrode (33a) and a metal oxide -containing layer to the insulating layer, and applying a second insulating layer (5) to the capacitor. The electrodes contain a platinum metal or a conducting oxide of a platinum metal. A conducting protective layer (33b) is applied to the upper electrode in a contact opening (51) which is filled with tungsten by chemical vapor deposition in a hydrogen atmosphere. Preferred Features: The electrodes contain platinum or consist of platinum. The metal oxide-containing layer is made of SrBi2(Ta, Nb)2O9, Pb(ZrTi)O3 or Bi4Ti3O12. The protective layer is made of WSi, IrOx, RhOx, RuOx, OsOx, SrRuO3, LaSrCoOx, a high temperature superconductor or carbide.