公开(公告)号：JP2002141412A

公开(公告)日：2002-05-17

申请号：JP2001255934

申请日：2001-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HASLER BARBARA ,  SCHNABEL RAINER FLORIAN ,  SCHINDLER GUENTHER DR ,  WEINRICH VOLKER

IPC: H01L23/522 ,  H01L21/02 ,  H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at least one insulation layer is prepared. A mask is formed on the upper face of the insulation layer, and then an isotropic etching process is mainly conducted, and then an anisotropic etching is mainly conducted until reaching the lower face of the insulation film and thereby forming a contact hole. Then, the mask is removed and the contact hole is filled with a first conductive material. The first conductive material is etched back to a specified depth, and then a free region of the contact hole is filled with at least one kind of second conductive material.

公开(公告)号：JP2002016149A

公开(公告)日：2002-01-18

申请号：JP2001180037

申请日：2001-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENKE MATTHIAS ,  SCHINDLER GUENTHER DR

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide such a method that the method for locally forming apertures in layers as predetermined is modified to enable the formation of predetermined local apertures in the layers to open, the these layers to open are not damaged as much as possible excluding the regions of the apertures. SOLUTION: At least one projected auxiliary structure 11 consisting of an auxiliary material 13 is made to adhere on substrates 1, 5, 7 and 9 on a substrate with a structure positioned thereon. As the result, the auxiliary structure 11 covers each one part of the surfaces of the substrates 1, 5, 7 and 9, layers 15 to open are made to adhere on the auxiliary structure 11. The layers 15 to open cover the surface regions related to the substrates 1, 5, 7 and 9 and the auxiliary structure 11. The layers 15 in the structure 11 are opened by almost a flat etching, and the material for the layers 15 and, in some cases, another material existing on the surfaces of the substrates 1, 5, 7 and 9 are removed until the material 13 is exposed.

公开(公告)号：JP2002076296A

公开(公告)日：2002-03-15

申请号：JP2001253003

申请日：2001-08-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUENTHER DR ,  GABRIC ZVONIMIR ,  HARTNER WALTER

IPC: H01L27/105 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of etching a contact hole, after coating an effective hydrogen barrier using a simple method, and to provide a microelectronic constituent member. SOLUTION: A method for manufacturing the microelectronic constituent member comprises the steps of forming a memory capacitor (3) containing a first electrode (31), a second electrode (32) and a ferroelectric or paraelectric dielectric (33) between the electrodes (31, 32) on a substrate (1); first, forming a silicon oxide (41) in the case of forming a barrier (4) to form the barrier (4) for protecting against infiltration of hydrogen onto the capacitor (3); annealing at least a part of the capacitor (3) and the silicon oxide (41); and coating the barrier layer (42) for protecting against the infiltration of hydrogen on the annealed silicon oxide layer (41). The microelectronic constituent member manufactured by the method is provided.

公开(公告)号：JP2001237393A

公开(公告)日：2001-08-31

申请号：JP2000399178

申请日：2000-12-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  KASTNER MARCUS ,  DEHM CHRISTINE

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/318 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric memory. SOLUTION: A switching resistor (2) is formed on a semiconductor substrate (1), an isolation layer (4) is deposited on the switching transistor (2), and then a memory capacitor provided with a lower electrode (7) formed of platinum and a ferroelectric or paraelectric (8) is formed on the isolation layer. In order to protect the dielectric against intrusion of hydrogen in following manufacturing processes, a first barrier layer (5) is embedded in the isolation layer (4) and, after formation of the memory capacity, a second barrier layer (10) connected to the first barrier layer (5) is deposited.

公开(公告)号：JP2001244425A

公开(公告)日：2001-09-07

申请号：JP2001051142

申请日：2001-02-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  WEINRICH VOLKER ,  KASKO IGOR

IPC: H01L27/105 ,  H01L21/02 ,  H01L21/8246

Abstract: PROBLEM TO BE SOLVED: To provide an executable method of manufacturing, with only a little labor, a ferroelectric-material capacitor having two pieces or more of withstand voltage which are different from each other. SOLUTION: First, a first electrode structure 11 having the surface which forms at least two-height levels is formed on a substrate 1, a ferroelectric- material layer 13 having a variety of layer thickness is laminated on the first electrode structure 11 by spin coating, and in succession, a second electrode structure 12 is formed on the ferroelectric-material layer 13.

公开(公告)号：JP2001237402A

公开(公告)日：2001-08-31

申请号：JP2000393554

申请日：2000-12-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  WEINRICH VOLKER ,  AHLSTEDT MATTIAS

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a structured metal oxide containing layer. SOLUTION: The method comprises the processing steps of preparing a substrate, covering a metal oxide containing layer on the substrate, structuring the metal oxide containing layer, and covering a repair layer covering at least edges of the metal oxide containing layer, and the repair layer contains at least one kind of element which is contained in the metal oxide containing layer but lacks in the stoichiometric composition at the edges due to structuring, and is heat-treated so as to diffuse the element from the repair layer at damaged regions of the edges of the metal oxide containing layer.

公开(公告)号：JP2001298165A

公开(公告)日：2001-10-26

申请号：JP2001057296

申请日：2001-03-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BACHHOFER HARALD ,  HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  HANEDER THOMAS PETER ,  HONLEIN WOLFGANG

IPC: H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To facilitate the production of a storage capacitor. SOLUTION: The crystallizing temperature of a ferroelectric layer (3) (dielectric) to be used for the storage capacitor can be lowered by applying an extremely thin CeO2 layer (2) to a first platinum electrode layer (1) before depositing the ferroelectric layer (3). Continuously, in a treatment process, the dielectric layer (3) deposited in a noncrystalline state is crystallized at a temperature within the range from 590 to 620 deg.C. Next, a second electrode layer (4) is applied and the storage capacitor is completed.

公开(公告)号：DE59900238D1

公开(公告)日：2001-10-11

申请号：DE59900238

申请日：1999-11-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUENTHER DR ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507