公开(公告)号：JPH0818161A

公开(公告)日：1996-01-19

申请号：JP10266695

申请日：1995-04-26

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  TSUKAMOTO HIRONORI ,  TANIGUCHI OSAMU ,  ITO SATORU ,  SHIRAISHI SEIJI

IPC: H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To obtain II-VI compound semiconductor laser in which the lifetime can be prolonged by retarding the proliferation rate of crystal defect. CONSTITUTION:The II-VI compound semiconductor light emission element has an active layer of quantum well structure comprising first and second clad layers of ZnzMg1-xSySe1-y (0

公开(公告)号：JPH0799211A

公开(公告)日：1995-04-11

申请号：JP23998493

申请日：1993-09-27

Applicant: SONY CORP

Inventor： HIEI FUTOSHI ,  IKEDA MASAO ,  MATSUMOTO OSAMU

IPC: H01L21/203 ,  H01L21/363 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE:To satisfactorily reduce ohmic-contact of an electrode when a ZnTe layer is used as an electrode contact layer. CONSTITUTION:Relating to manufacture of II-VI group semiconductor element wherein a 11-VI group semiconductor layer and, over it, an electrode contact layer are epitaxial-grown, by ZnTe, on a substrate 1, the position of an impurities supply source 11 for introducing impurities at, at least, epitaxial growth an its surface layer is, in the process of epitaxial growth of an electrode contact layer, shifted toward substrate 1 side from the position of impurity supply source 11 at previous epitaxial growth, for epitaxial growth.

公开(公告)号：JPH0766503A

公开(公告)日：1995-03-10

申请号：JP23236693

申请日：1993-08-25

Applicant: SONY CORP

Inventor： ITO SATORU ,  OZAWA MASABUMI ,  ISHIBASHI AKIRA ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE:To obtain a light emitting diode capable of bringing a p type contact layer and a p type electrode into excellent ohmic contact as well as generating a working voltage not exceeding 10V. CONSTITUTION:The light emitting diode is provided with a p type contact layer 30 formed on a compound semiconductor layer 24, where this p type contact layer 30 is composed of the first contact layer 32, the second contact layer 36 and the a plurality of quantum well structure 34 comprising a plurality of barrier layers and a plurality of quantum well layers formed between the first and second contact layers 32 and 36, where the thickness of the barrier layer is 0.3-1,7nm and the numbers of the quantum well layers are 3-6.

公开(公告)号：JPS6251282A

公开(公告)日：1987-03-05

申请号：JP19171885

申请日：1985-08-30

Applicant: SONY CORP

Inventor： ISHIKAWA HIDETO ,  ISHIBASHI AKIRA ,  MORI YOSHIFUMI ,  IKEDA MASAO

IPC: H01S5/00

Abstract: PURPOSE:To decrease scattering of LA phonons in clad layers, to improve heat conductivity and to improve the characteristics and the life of a laser, by providing a super-lattice structure, wherein a least one of the clad layers provided in adjacent to an active layer has a specified composition. CONSTITUTION:First and second clad layers 12 and 14 or the first clad layer is made to be a semiconductor layer having a super-lattice structure. For example, in an AlGaAs three-element semiconductor laser, the super-lattice structure of (AlAs)n and (GaAs)m, in which thin film semiconductors comprising lower two-element (n) and (m) atomic layers of AlAs and GaAs are periodically overlapped. The composition of the clad layers having said super-lattice structure is selected as follows. The average composition of the entire clad layers has the confining effect of carriers and light for the active layer 13 at the inherent crystal state, e.g., in AlGaAs. The difference in refractive indexes and the difference in energy band gaps, which are required for the active layer 13, are provided. Namely, the composition has the smaller refractive index and the larger energy band gap with respect to the active layer 13.

公开(公告)号：JPS61147592A

公开(公告)日：1986-07-05

申请号：JP27003984

申请日：1984-12-21

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00

Abstract: PURPOSE:To obtain a stable semiconductor laser with good characteristics by a method wherein, before an irregular processing is performed, the luminescent mechanism part is formed of an organic metal of an AlGaInP semiconductor or by the metal vapor-phase growth method. CONSTITUTION:A buffer layer 22, a first clad layer 23, an active layer 24 and a second clad layer 25 are made to grow in order on the main surface of an n-type GaAs single crystal substrate 21, and further successively, a protective semiconductor layer 26 for the second clad layer 25 is made to grow on the second clad layer 25 and a current constricting layer 27 is made to grow there on. The buffer layer 22, the first clad layer 23 and the current constricting layer 27 have the same n-type conductive type as that of the substrate 21, and the second clad layer 25 and the protective semiconductor layer 26 for the second clad layer 25 have the p-type conductive type inverse to the n-type conductive of the substrate 21. An electrode 29 on one side is ohmically formed by adhesion on a cap layer 28 and an electrode 30 on the other side is ohmically formed by adhesion on the back surface of the substrate 21.

公开(公告)号：JPS6135514A

公开(公告)日：1986-02-20

申请号：JP15815184

申请日：1984-07-28

Applicant: Sony Corp

Inventor： IKEDA MASAO ,  MORI YOSHIFUMI ,  KAWAI HIROHARU

IPC: H01L21/205 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00

CPC classification number: H01L33/0062 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: PURPOSE: To obtain a high quality semiconductor light emitting apparatus by defining a substrate temperature and ratio of each raw material gases of III-V group.
CONSTITUTION: Temperature of substrate 1 is set to 580°CW530°C, both gases of Triethyl compound of III group metal and phosphine are supplied for the substrate 1 so that the supply ratio of phosphine to the triethyl compound of IIIgroup metal becomes 300 or more, both gases are mixed at the area just before reaching the substrate 1, namely at the area near the front side of aperture end 16a in the side of entrance of the path 16 in front of the first and second supply ports 17, 18 and such mixed gas is sent to the path 16. This mixed gas is further caused to flow along the surface of substrate 1 as indicated by the arrow mark (a) and thereby A GaInP system III-V group compound semiconductor layer is formed by the epitaxial growth method on the substrate. Thereby, generation of intermediate product by reaction can be controlled effectively even when the raw materials gases of III and IV groups which have reactive characteristic and different decomposition rates.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：通过限定III-V族的原料气体的基板温度和比例来获得高质量的半导体发光装置。 构成：将基板1的温度设定为580℃〜530℃，对基体1供给III族金属和膦的三乙基化合物的两种气体，使得膦与III族金属的三乙基化合物的供给比 成为300以上时，在到达基板1之前的区域，即在第一和第二供给口17前方的路径16的入口侧的开口端16a的前侧附近的区域，两种气体混合 ，18，这样的混合气体被送到路径16.如箭头标记（a）所示，该混合气体进一步沿着基板1的表面流动，由此形成GaInP系III-V族化合物半导体层 通过外延生长法在衬底上。 因此，即使当具有反应特性和分解速率的III和IV族的原料气体时，也可以有效地控制通过反应产生中间产物。

公开(公告)号：JPS58148424A

公开(公告)日：1983-09-03

申请号：JP3135382

申请日：1982-02-26

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  MORI YOSHIFUMI

IPC: C23C16/458 ,  H01L21/205

Abstract: PURPOSE:To obtain an epitaxial growth layer having a uniform characteristic at the respective parts by a method wherein the face of a sample is inclined in relation to the current of reaction gas and moreover the sample is rotated. CONSTITUTION:The central axis O-O of a supporting desk 18 mounting the sample 17 is made to perform presession according to revolution holding the prescribed angle theta in relation to the direction of the current of reaction gas passing through a buckle 16 and flowing from the upper part thereof to the lower part in the gas cource thereof in a reaction vessel 11, for example, At this time, the supporting desk 18 is made as not to perform a rotation shown with an arrow mark (a), so-called rotation, or as to perform rotation according to the number of rotation being lower as compared with the number of rotation of revolution. Namely, generation of a difference in vapor phase growth to be generated according to the generation of the difference of the peripheral speed between the central part and the circumferential part of the supporting desk to be generated according to rotation thereof is prevented.

公开(公告)号：JP2014170958A

公开(公告)日：2014-09-18

申请号：JP2014094520

申请日：2014-05-01

Applicant: Sony Corp ,  ソニー株式会社 ,  Tohoku Univ ,  国立大学法人東北大学

Inventor： KURAMOTO MASARU ,  IKEDA MASAO ,  KODA RINTARO ,  OKI TOMOYUKI ,  WATANABE HIDEKI ,  MIYAJIMA TAKAO ,  YOKOYAMA HIROYUKI

IPC: H01S5/50 ,  H01S5/028 ,  H01S5/065 ,  H01S5/22 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier comprising a GaN-based compound semiconductor and capable of achieving still higher optical output.SOLUTION: A semiconductor optical amplifier 200 is provided with: (a) a layered structure created by sequentially stacking a first compound semiconductor layer comprising a GaN-based compound semiconductor, a third compound semiconductor layer, and a second compound semiconductor layer; (b) a second electrode 262 formed on the second compound semiconductor layer; (c) a first electrode electrically connected to the first compound semiconductor layer. The layered structure has a ridge stripe structure in which, when Wrepresents the width of the ridge stripe structure in a light emission end face 203 and Wrepresents the width of the ridge stripe structure in a light incident end face 201, W>Wis satisfied. In a region inward of the layered structure from the light emission end face 201 along an axial line AXof the semiconductor optical amplifier is provided with a carrier non-injection region 205. The second electrode 262 is configured from a first portion 262A and a second portion 262B separated by a separation groove 262C. The carrier non-injection region 205 is provided with the second portion 262B of the second electrode.

Abstract translation: 要解决的问题：提供一种包括GaN基化合物半导体并能够实现更高的光输出的半导体光放大器。解决方案：半导体光放大器200具有：（a）通过顺序堆叠第一 包含GaN基化合物半导体，第三化合物半导体层和第二化合物半导体层的化合物半导体层; （b）形成在第二化合物半导体层上的第二电极262; （c）电连接到第一化合物半导体层的第一电极。 层状结构具有脊状条纹结构，其中W表示发光端面203中的脊条结构的宽度，W表示光入射端面201中的脊条状结构的宽度，W> Wis满足。 在沿半导体光放大器的轴线AX的发光端面201的分层结构内侧的区域设置有载体非注入区域205.第二电极262由第一部分262A和第二部分 262B分隔开。 载体非注入区域205设置有第二电极的第二部分262B。

公开(公告)号：JP2012015266A

公开(公告)日：2012-01-19

申请号：JP2010149345

申请日：2010-06-30

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： KURAMOTO MASARU ,  IKEDA MASAO ,  KODA RINTARO ,  OKI TOMOYUKI ,  WATANABE HIDEKI ,  MIYAJIMA TAKAO ,  YOKOYAMA HIROYUKI

IPC: H01S5/50 ,  H01S5/343

CPC classification number: H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier composed of a GaN-based compound semiconductor capable of achieving increased light output.SOLUTION: A semiconductor optical amplifier 200 comprises: (a) a laminate structure in which a first compound semiconductor layer composed of a GaN-based compound semiconductor, a third compound semiconductor layer, and a second compound semiconductor layer are sequentially stacked; (b) a second electrode 262 formed on the second compound semiconductor layer; and (c) a first electrode electrically connected to the first compound semiconductor layer. The laminate structure has a ridge stripe structure. When the width of the ridge stripe structure at a light-emitting end surface 203 is Wand the width of the ridge stripe structure at a light incident end surface 201 is W, W>Wis satisfied. In an inner region of the laminate structure from the light-emitting end surface 203 along an axial line AXof the semiconductor optical amplifier, a carrier non-injection region 205 is provided.

Abstract translation: 解决的问题：提供一种由能够实现增加的光输出的GaN基化合物半导体组成的半导体光放大器。 解决方案：半导体光放大器200包括：（a）层叠结构，其中由GaN基化合物半导体，第三化合物半导体层和第二化合物半导体层构成的第一化合物半导体层依次层叠; （b）形成在第二化合物半导体层上的第二电极262; 和（c）与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当发光端面203处的棱条结构的宽度为W 时，光入射端面201处的脊条结构的宽度为W 中的POS =“POST”>，满足 中的输出。 在从半导体光放大器的轴线AX 1 的发光端面203的层叠结构的内部区域中，设置载流子非注入区域205。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2008277867A

公开(公告)日：2008-11-13

申请号：JP2008210286

申请日：2008-08-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  GOTO OSAMU ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting element capable of suppressing overflow of an electron without interfering the injection of a hole into an active layer and drastically reducing a driving current and a driving voltage, with easy process using a nitride-based group III-V semiconductor. SOLUTION: The semiconductor light-emitting element has the active layer 7 in the multiple quantum well structure of In x Ga 1-x N/In y Ga 1-y N, an AlGaN/GaN superlattice cap layer 8 in contact with the layer 7, a p-type GaN optical waveguide layer 9 in contact with the layer 8, and a p-type AlGaN/GaN superlattice clad layer 10 in contact with the layer 9. In case of manufacturing the above-described element, the active layer 7 and the AlGaN/GaN superlattice cap layer 8 are grown up in a carrier-gas atmosphere substantially containing no hydrogen and containing nitrogen as a main component. The p-type GaN optical wavegide layer 9 and the p-type AlGaN/GaN superlattice clad layer 10 are grown up in the atmosphere containing nitrogen and hydrogen as the main components. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够抑制电子溢出而不干扰向有源层注入空穴的半导体发光元件的制造方法，并且可以容易地大大降低驱动电流和驱动电压 使用基于氮化物的III-V族III族半导体。 解决方案：半导体发光元件具有In / Sb> Ga 1-x N / In y的多量子阱结构中的有源层7 与层7接触的AlGaN / GaN超晶格帽层8，与层8接触的p型GaN光波导层9和 p型AlGaN / GaN超晶格覆盖层10与层9接触。在制造上述元件的情况下，有源层7和AlGaN / GaN超晶格覆盖层8基本上在载气气氛中长大 不含氢，含氮为主要成分。 p型GaN光波导层9和p型AlGaN / GaN超晶格覆盖层10在以氮气和氢气为主要成分的气氛中长大。 版权所有（C）2009，JPO＆INPIT