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    THIN CAPPING FOR MEMS DEVICES
    111.
    发明申请
    THIN CAPPING FOR MEMS DEVICES 有权
    薄膜封装用于MEMS器件

    公开(公告)号：US20160207758A1

    公开(公告)日：2016-07-21

    申请号：US14914015

    申请日：2014-08-26

    Applicant: SILEX MICROSYSTEMS AB

    Inventor： Edvard KALVESTEN ,  Thorbjorn EBEFORS ,  Niklas SVEDIN

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

    Abstract: A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

    Abstract translation: 一种装置包括具有附接到其上的微型部件（702）的基底（700）。 适当地，它设置有用于向组件（702）进行信号的路由选择元件（704）。 它还包括间隔件（706），其也可以用作垂直路线信号的导电结构。 优选地通过共晶接合，通过间隔件（706），设置在基底基板（700）上方的玻璃材料的封盖结构（708），其中封盖结构（708）包括通孔（710），包括金属 用于提供通过封盖结构的电连接。 通孔可以通过冲压/压制方法制成，在加热下需要加压针，使玻璃软化并施加压力至玻璃中预定的深度。 然而，其他方法是可行的，例如钻孔，蚀刻，爆破。

    Low temperature ceramic microelectromechanical structures
    114.
    发明授权
    Low temperature ceramic microelectromechanical structures 有权
    低温陶瓷微机电结构

    公开(公告)号：US08658452B2

    公开(公告)日：2014-02-25

    申请号：US13003328

    申请日：2009-07-08

    Applicant: Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    IPC: H01L21/00 ,  H01L27/14

    CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

    Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

    Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES
    118.
    发明申请
    LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES 有权
    低温陶瓷微电子结构

    公开(公告)号：US20110111545A1

    公开(公告)日：2011-05-12

    申请号：US13003328

    申请日：2009-07-08

    Applicant: Mourad El-Gamal

    Inventor： Mourad El-Gamal

    IPC: H01L21/02

    CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

    Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

    Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

    미세 전자 기계 버랙터 및 그 제조 방법
    120.
    发明公开
    미세 전자 기계 버랙터 및 그 제조 방법 有权
    具有增强调谐范围的微电子变压器

    公开(公告)号：KR1020050084819A

    公开(公告)日：2005-08-29

    申请号：KR1020057004845

    申请日：2003-09-18

    Applicant: 인터내셔널 비지네스 머신즈 코포레이션

    Inventor： 친타킨디아닐케이 ,  그로베스로버트에이 ,  스테인케네스제이 ,  수반나세샤드리 ,  볼란트리차드피

    IPC: H01G5/16 ,  B81B7/02

    CPC classification number: H01G5/18 ,  B81B2201/01 ,  H01G5/011 ,  Y10S257/924

    Abstract: A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam (50) and fixed electrodes (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the "chip side" while the fixed bottom electrode is fabricated on a separated substrate "carrier side". Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and "flipped over", aligned and joined to the "carrier" substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.

    Abstract translation: 描述了三维微机电（MEM）变容二极管，其中可移动光束（50）和固定电极（51）分别制造在彼此耦合的分开的基板上。 具有梳状驱动电极的可移动光束在“芯片侧”上制造，而固定底部电极制造在分离的基板“载体侧”上。 在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并接合到“载体”衬底以形成最终器件。 梳状驱动（鳍）电极用于致动，同时电极的运动提供电容的变化。 由于所涉及的驱动力恒定，可以获得大的电容调谐范围。 该装置的三维方面具有较大的表面积。 当提供大的纵横比特征时，可以使用较低的致动电压。 在制造时，MEMS器件被完全封装，不需要额外的器件封装。 此外，由于可以在晶片规模（晶片级MEMS封装）上进行取向和接合，所以可以以更低的成本获得改进的器件产量。

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