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111.发明申请公开(公告)号：US20130122627A1
公开(公告)日：2013-05-16
申请号：US13294603
申请日：2011-11-11
Applicant: David L. HARAME , Anthony K. STAMPER
Inventor： David L. HARAME , Anthony K. STAMPER
CPC classification number: B81B3/0027 , B81B2201/0285 , H01L21/84 , H01L27/1203 , H01L41/1136 , H01L2224/73265 , H03H3/02 , H03H9/1007 , H03H9/173 , H03H2001/0064 , H03H2003/027 , H03H2009/155 , H03H2009/241
Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.
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公开(公告)号：US08033091B2
公开(公告)日：2011-10-11
申请号：US10554312
申请日：2004-04-22
Applicant: Marek Michalewicz , Zygmunt Rymuza
Inventor： Marek Michalewicz , Zygmunt Rymuza
IPC: G01D5/14
CPC classification number: B81B3/0051 , B81B3/0021 , B81B2201/0285 , B81B2203/0109 , B81B2203/051 , G01C19/00 , G01D21/00 , G01P15/0894 , Y10S977/724 , Y10S977/725 , Y10S977/732 , Y10S977/733
Abstract: A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.
Abstract translation: 单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接， 衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。 固态铰链装置允许基板横向于细长电导体的相对平行平移。
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公开(公告)号：US07943413B2
公开(公告)日：2011-05-17
申请号：US12440127
申请日：2007-07-20
Applicant: Takashi Kasai , Yasuhiro Horimoto , Fumihito Kato , Masaki Munechika , Shuichi Wakabayashi , Toshiyuki Takahashi , Masayuki Inuga
Inventor： Takashi Kasai , Yasuhiro Horimoto , Fumihito Kato , Masaki Munechika , Shuichi Wakabayashi , Toshiyuki Takahashi , Masayuki Inuga
CPC classification number: B81C1/00182 , B81B2201/0257 , B81B2201/0285 , B81B2203/0127 , B81B2203/0353 , H04R19/005 , H04R19/04
Abstract: A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed, and forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially.
Abstract translation: 一种制造振动传感器的方法，包括在单晶硅的半导体衬底的前表面的一个部分处形成牺牲层，所述材料用蚀刻剂蚀刻半导体衬底的各向同性蚀刻材料，形成具有材料的薄膜保护膜 在牺牲层周围的牺牲层和半导体衬底的前表面上的蚀刻剂的耐受性，在牺牲层的上侧形成单晶硅，多晶硅或非晶硅的薄膜，打开背面 在形成在半导体衬底的背面上的用于蚀刻半导体衬底的蚀刻剂的表面保护膜的蚀刻窗口中，通过使用晶体取向的蚀刻通过蚀刻半导体衬底各向异性地在半导体衬底中形成通孔 应用来自后表面窗口的蚀刻剂，然后蚀刻 在蚀刻剂到达半导体衬底的前表面之后，通过蚀刻剂各向同性地施加牺牲层，然后通过使用晶体取向的蚀刻从蚀刻剂扩散到牺牲层之后形成的空间来各向异性蚀刻半导体衬底 并且通过部分去除薄膜保护膜来形成用于在半导体衬底的上表面上支撑薄膜的保持器。
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公开(公告)号：US20110094303A1
公开(公告)日：2011-04-28
申请号：US12926970
申请日：2010-12-21
Applicant: Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
Inventor： Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
CPC classification number: G01C19/56 , B81B7/0058 , B81B2201/0235 , B81B2201/0285 , G01D18/00 , G01P15/08 , H01L2224/48247 , H05K13/00 , Y10T29/49002 , Y10T29/49117 , Y10T29/49826
Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.
Abstract translation: 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。
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115.发明申请MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) MICROPHONE AND METHOD OF MANUFACTURING THE SAME 有权微机电系统（MEMS）麦克风及其制造方法公开(公告)号：US20100158281A1
公开(公告)日：2010-06-24
申请号：US12509411
申请日：2009-07-24
Applicant: Jae Woo LEE , Kang Ho Park , Jong Dae Kim
Inventor： Jae Woo LEE , Kang Ho Park , Jong Dae Kim
CPC classification number: B81C1/00182 , B81B2201/0235 , B81B2201/0257 , B81B2201/0285 , H04R3/00 , H04R19/005 , H04R31/00 , H04R2201/003
Abstract: Provided are a micro-electromechanical systems (MEMS) microphone and a method of manufacturing the same. A manufacturing process is simplified compared to a conventional art using both upper and lower substrate processes. Since defects which may occur during manufacturing are reduced due to the simplified manufacturing process, the manufacturing throughput is improved, and since durability of the MEMS microphone is improved, system stability against the external environment is improved.
Abstract translation: 提供了一种微机电系统（MEMS）麦克风及其制造方法。 与使用上基板工艺和下基板工艺的常规技术相比，制造工艺简化。 由于制造过程中可能发生的缺陷由于简化的制造过程而降低，所以提高了制造生产能力，并且由于提高了MEMS麦克风的耐久性，提高了对外部环境的系统稳定性。
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Patent Agency Ranking
公开(公告)号：US20100123366A1
公开(公告)日：2010-05-20
申请号：US12615070
申请日：2009-11-09
Applicant: Chienliu Chang
Inventor： Chienliu Chang
CPC classification number: B81C1/00158 , B06B1/0292 , B81B2201/0285 , H04R19/005 , H04R31/00 , H04R2201/003 , Y10T29/49005 , Y10T29/49007
Abstract: An electromechanical transducer of the present invention includes a first electrode, a vibrating membrane formed above the first electrode through a gap, a second electrode formed on the vibrating membrane, and an insulating protective layer formed on a surface of the second electrode side. A region where the protective layer is not formed is present on at least part of a surface of the vibrating membrane.
Abstract translation: 本发明的机电换能器包括第一电极，通过间隙形成在第一电极上方的振动膜，形成在振动膜上的第二电极和形成在第二电极侧的表面上的绝缘保护层。 在振动膜的表面的至少一部分上存在未形成保护层的区域。
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公开(公告)号：US20100038734A1
公开(公告)日：2010-02-18
申请号：US12440127
申请日：2007-07-20
Applicant: Takashi Kasai , Yasuhiro Horimoto , Fumihito Kato , Masaki Munechika , Shuichi Wakabayashi , Toshiyuki Takahashi , Masayuki Inuga
Inventor： Takashi Kasai , Yasuhiro Horimoto , Fumihito Kato , Masaki Munechika , Shuichi Wakabayashi , Toshiyuki Takahashi , Masayuki Inuga
CPC classification number: B81C1/00182 , B81B2201/0257 , B81B2201/0285 , B81B2203/0127 , B81B2203/0353 , H04R19/005 , H04R19/04
Abstract: A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed, and forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially.
Abstract translation: 一种制造振动传感器的方法，包括在单晶硅的半导体衬底的前表面的一个部分处形成牺牲层，所述材料用蚀刻剂蚀刻半导体衬底的各向同性蚀刻材料，形成具有材料的薄膜保护膜 在牺牲层周围的牺牲层和半导体衬底的前表面上的蚀刻剂的耐受性，在牺牲层的上侧形成单晶硅，多晶硅或非晶硅的薄膜，打开背面 在形成在半导体衬底的背面上的用于蚀刻半导体衬底的蚀刻剂的表面保护膜的蚀刻窗口中，通过使用晶体取向的蚀刻通过蚀刻半导体衬底各向异性地在半导体衬底中形成通孔 应用来自后表面窗口的蚀刻剂，然后蚀刻 在蚀刻剂到达半导体衬底的前表面之后，通过蚀刻剂各向同性地施加牺牲层，然后通过使用晶体取向的蚀刻从蚀刻剂扩散到牺牲层之后形成的空间来各向异性蚀刻半导体衬底 并且通过部分去除薄膜保护膜来形成用于在半导体衬底的上表面上支撑薄膜的保持器。
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公开(公告)号：US20090282915A1
公开(公告)日：2009-11-19
申请号：US12453485
申请日：2009-05-12
Applicant: Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
Inventor： Tameharu Ohta , Tetsuo Fujii , Masanobu Azukawa , Takeshi Ito , Itaru Ishii
CPC classification number: G01C19/56 , B81B7/0058 , B81B2201/0235 , B81B2201/0285 , G01D18/00 , G01P15/08 , H01L2224/48247 , H05K13/00 , Y10T29/49002 , Y10T29/49117 , Y10T29/49826
Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.
Abstract translation: 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。
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公开(公告)号：US20060202591A1
公开(公告)日：2006-09-14
申请号：US11363395
申请日：2006-02-27
Applicant: Teruo Inaguma , Junichi Honda , Koji Suzuki , Kazuo Takahashi , Eiji Nakashio
Inventor： Teruo Inaguma , Junichi Honda , Koji Suzuki , Kazuo Takahashi , Eiji Nakashio
IPC: H01L41/00
CPC classification number: B81B3/0067 , B81B2201/0285 , B81B2203/0118 , G01C19/5663 , G01P15/0802
Abstract: A vibrating gyrosensor includes a support substrate on which a wiring pattern having a plurality of lands is formed, and a vibrating element mounted on a surface of the support substrate. The vibrating element includes a base part having a mounting surface on which a plurality of terminals, and a vibrator part integrally projected in a cantilever manner from one of the sides of the base part and having a substrate-facing surface coplanar with the mounting surface of the base part. The vibrator part has a first electrode layer, a piezoelectric layer, and a second electrode layer, which are formed on the substrate-facing surface in that order. Furthermore, a reinforcing part is formed at the base end of the vibrator part so that the sectional area of the vibrator part gradually increases toward the base part.
Abstract translation: 振动陀螺传感器包括：支撑基板，其上形成有多个焊盘的布线图案;以及安装在支撑基板的表面上的振动元件。 所述振动元件包括基部，所述基部具有安装面，多个端子和从所述基部的一个侧面以悬臂方式一体地突出的振动器部，并且具有与所述基板的安装面共面的面向基板的表面 的基础部分。 振子部具有依次形成在面向基板的表面上的第一电极层，压电层和第二电极层。 此外，在振动部的基端形成有加强部，使得振动部的截面积朝向基部逐渐增大。
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公开(公告)号：JP5957788B2
公开(公告)日：2016-07-27
申请号：JP2014541041
申请日：2012-08-14
Inventor： ハラメ・デヴィッド・エル , スタンパー・アンソニー・ケイ
CPC classification number: B81B3/0027 , H01L21/84 , H01L27/1203 , H03H3/02 , H03H9/1007 , H03H9/173 , B81B2201/0285 , H01L2224/73265 , H01L41/1136 , H03H2001/0064 , H03H2003/027 , H03H2009/155 , H03H2009/241
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