公开(公告)号：US20150102835A1

公开(公告)日：2015-04-16

申请号：US14512105

申请日：2014-10-10

Applicant: OCE-TECHNOLOGIES B.V.

Inventor： Maikel A.J. HUYGENS ,  René J. VAN DER MEER ,  Reinier PANNEKOEK ,  Alex N. WESTLAND

IPC: B81C99/00 ,  G01R31/02 ,  G01R31/26 ,  B81C1/00 ,  H05K1/11

CPC classification number: B81C99/004 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2002/14241 ,  B41J2002/14459 ,  B41J2002/14491 ,  B81B7/007 ,  B81B2201/052 ,  B81B2207/03 ,  B81C1/00301 ,  G01R31/02 ,  G01R31/2601 ,  H05K1/0268 ,  H05K1/111 ,  H05K2201/09372

Abstract: A substrate plate is provided for at least one MEMS device to be mounted thereon. The MEMS device has a certain footprint on the substrate plate, and the substrate plate has a pattern of electrically conductive leads to be connected to electric components of the MEMS device. The pattern forms contact pads within the footprint of the MEMS device and includes at least one lead structure that extends on the substrate plate outside of the footprint of the MEMS device and connects a number of the contact pads to an extra contact pad. The lead structure is a shunt bar that interconnects a plurality of contact pads of the MEMS device and is arranged to be removed by means of a dicing cut separating the substrate plate into a plurality of chip-sized units. At least a major part of the extra contact pad is formed within the footprint of one of the MEMS devices.

Abstract translation: 为安装在其上的至少一个MEMS装置提供基板。 MEMS器件在衬底板上具有一定的占地面积，并且衬底板具有连接到MEMS器件的电气部件的导电引线的图案。 该图案形成MEMS器件的覆盖区内的接触焊盘，并且包括至少一个引线结构，该引线结构在MEMS器件的覆盖区外部的衬底板上延伸，并将多个接触焊盘连接到额外的接触焊盘。 引线结构是将MEMS器件的多个接触焊盘互连的分流棒，并且被布置成通过将衬底板分成多个芯片尺寸的单元的切割切割来去除。 额外接触焊盘的至少主要部分形成在MEMS器件之一的覆盖区内。

公开(公告)号：US20140024147A1

公开(公告)日：2014-01-23

申请号：US13552721

申请日：2012-07-19

Applicant: Yonglin Xie ,  Weibin Zhang

Inventor： Yonglin Xie ,  Weibin Zhang

IPC: H01L21/308

CPC classification number: B41J2/1601 ,  B41J2/1607 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/032 ,  B81B2201/052 ,  B81C1/00158

Abstract: A MEMS device fabrication method includes providing a substrate and a chamber wall material layer on a first surface of the substrate, the chamber wall material layer including a chamber cavity having a sacrificial material located therein. A mask material is deposited on the chamber wall material layer and the sacrificial material and patterned to form a mask pattern including a plurality of discrete portions. The mask material and some of the sacrificial material are removed to transfer the mask pattern including the plurality of discrete portions to the sacrificial material. A membrane material layer is deposited on the chamber wall material layer and the sacrificial material that includes the transferred mask pattern including the plurality of discrete portions. Some of the substrate and the sacrificial material are removed to release the membrane material layer using at least one process initiated from a second surface of the substrate.

Abstract translation: MEMS器件制造方法包括在衬底的第一表面上提供衬底和室壁材料层，室壁材料层包括具有位于其中的牺牲材料的腔室腔。 掩模材料沉积在室壁材料层和牺牲材料上并被图案化以形成包括多个离散部分的掩模图案。 去除掩模材料和一些牺牲材料以将包括多个离散部分的掩模图案转移到牺牲材料。 膜材料层沉积在室壁材料层和牺牲材料上，该牺牲材料包括包含多个离散部分的转印掩模图案。 使用从衬底的第二表面引发的至少一种工艺，去除一些衬底和牺牲材料以释放膜材料层。

公开(公告)号：US20120168010A1

公开(公告)日：2012-07-05

申请号：US13381791

申请日：2010-07-02

Applicant: Wolfgang Andreas Bauer ,  Wilhelm T.S. Huck ,  Martin Fischlechner

Inventor： Wolfgang Andreas Bauer ,  Wilhelm T.S. Huck ,  Martin Fischlechner

IPC: F03B11/02 ,  B05D3/10 ,  B05C9/02 ,  B05D7/22

CPC classification number: B01L3/502707 ,  B01F17/00 ,  B01J2219/00511 ,  B01J2219/0059 ,  B01J2219/00637 ,  B01J2219/00783 ,  B01J2219/00788 ,  B01J2219/00831 ,  B01J2219/00833 ,  B01J2219/00837 ,  B01J2219/0097 ,  B01L2200/0636 ,  B01L2300/0867 ,  B01L2300/16 ,  B01L2300/161 ,  B05C7/04 ,  B05D7/22 ,  B05D7/222 ,  B81B2201/0214 ,  B81B2201/05 ,  B81B2201/052 ,  B81B2201/058 ,  B81C1/00119 ,  B81C1/00206 ,  Y10T137/8593

Abstract: We describe a method of layer-by-layer deposition of a plurality of layers of material onto the wall or walls of a channel of a microfluidic device, the method comprising: loading a tube with a series of segments of solution, a said segment of solution bearing a material to be deposited; coupling said tube to said microfluidic device; and injecting said segments of solution into said microfluidic device such that said segments of solution pass, in turn, through said channel depositing successive layers of material to perform said layer-by-layer deposition onto said wall or walls of said channel. Embodiments of the methods are particularly useful for automated surface modification of plastic, for example PDMS (Poly(dimethylsiloxane)), microchannels. We also describe methods and apparatus for forming double-emulsions.

Abstract translation: 我们描述了将多层材料层逐层沉积到微流体装置的通道的壁或壁上的方法，该方法包括：将具有一系列溶液段的管装载， 含有待沉积材料的溶液; 将所述管连接到所述微流体装置; 以及将所述溶液段注射到所述微流体装置中，使得所述溶液段又通过所述通道沉积连续的材料层，以在所述通道的所述壁或壁上执行所述逐层沉积。 该方法的实施方案对于塑料的自动表面改性特别有用，例如PDMS（聚（二甲基硅氧烷）），微通道。 我们还描述了形成双重乳液的方法和设备。

公开(公告)号：US08053377B2

公开(公告)日：2011-11-08

申请号：US12892190

申请日：2010-09-28

Applicant: Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

Inventor： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

IPC: H01L21/31 ,  H01L21/469

CPC classification number: B41J2/16 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B81B2201/052 ,  B81C1/00666 ,  B81C2201/017 ,  B81C2201/053

Abstract: System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.

Abstract translation: 用于形成包括MEMS器件结构的结构的系统和方法。 为了防止由牺牲材料（例如光致抗蚀剂）的固化过程引起的基板翘曲，以及随后的高温工艺步骤，改进的牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊的 功能组。 可以通过在衬底中形成沟槽并用牺牲材料填充沟槽来形成结构。 牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊功能组。 在完成进一步的工艺步骤之后，将牺牲材料从沟槽中移除。

公开(公告)号：US07980671B2

公开(公告)日：2011-07-19

申请号：US11447275

申请日：2006-06-06

Applicant: Peter J. Nystrom ,  Donald J. Drake ,  Peter M. Gulvin ,  Joseph A. DeGroot ,  Jun Ma ,  Nancy Y. Jia ,  Andrew W. Hays

Inventor： Peter J. Nystrom ,  Donald J. Drake ,  Peter M. Gulvin ,  Joseph A. DeGroot ,  Jun Ma ,  Nancy Y. Jia ,  Andrew W. Hays

IPC: B41J2/06

CPC classification number: B41J2/16 ,  B41J2/14 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2002/043 ,  B81B3/001 ,  B81B2201/052 ,  B81B2203/053 ,  H02N1/006

Abstract: The present application is directed to electrostatic actuators, and methods of making electrostatic actuators. In one embodiment, an electrostatic actuator of the present application comprises a first electrode and a second electrode. The second electrode is positioned in proximity to the first electrode so as to provide a gap between the first electrode and the second electrode. The first electrode is capable of being deflected toward the second electrode. A dielectric structure comprising a dielectric landing post is positioned in the gap between the first electrode and the second electrode, the dielectric structure extending over a greater surface of the gap than the landing post. The landing post protrudes out into the gap so as to limit the minimum contact spacing between the first electrode and the second electrode.

Abstract translation: 本申请涉及静电致动器以及制造静电致动器的方法。 在一个实施例中，本申请的静电致动器包括第一电极和第二电极。 第二电极位于第一电极附近，以便在第一电极和第二电极之间提供间隙。 第一电极能够朝向第二电极偏转。 包括电介质着陆柱的电介质结构位于第一电极和第二电极之间的间隙中，电介质结构在间隙的更大表面上延伸超过着陆柱。 着陆柱突出到间隙中，以限制第一电极和第二电极之间的最小接触间距。

公开(公告)号：US20110081138A1

公开(公告)日：2011-04-07

申请号：US12968150

申请日：2010-12-14

Applicant: Ming Fang ,  Fuchao Wang

Inventor： Ming Fang ,  Fuchao Wang

IPC: H05B3/82 ,  B23P19/04

CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。

公开(公告)号：US07837887B2

公开(公告)日：2010-11-23

申请号：US12542659

申请日：2009-08-17

Applicant: Darrell LaRue McReynolds ,  Kia Silverbrook

Inventor： Darrell LaRue McReynolds ,  Kia Silverbrook

IPC: G11B5/127

CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

Abstract: A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.

Abstract translation: 一种形成用于喷墨打印头的供墨通道的方法包括以下步骤：（i）提供具有前侧和后侧的晶片; （ii）将多个前侧沟槽蚀刻到前侧; （iii）用光致抗蚀剂插塞填充每个沟槽; （iv）使用MEMS制造工艺在前侧形成喷嘴结构; （v）从背面蚀刻背面沟槽，所述背面沟槽与一个或多个所述插头相会合; （vi）通过使背面经受偏压的氧等离子体蚀刻，从而暴露背面沟槽中的侧壁特征，通过背侧沟槽去除每个光致抗蚀剂插塞的一部分; （vii）修改暴露的侧壁特征; 和（viii）去除光致抗蚀剂插头以形成供墨通道。 供墨通道将背面连接到前侧。

公开(公告)号：US07638349B2

公开(公告)日：2009-12-29

申请号：US11936060

申请日：2007-11-06

Applicant: Kia Silverbrook

Inventor： Kia Silverbrook

IPC: H01L21/00

CPC classification number: B81C1/00142 ,  B41J2/1404 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/052

Abstract: Provided is a substrate preparation method for a micro-electromechanical system (MEMS) fabrication process. The method includes the step of depositing at least four metal layers interspersed with interlayer dielectric (ILD) layers onto a silicon wafer substrate. A passivation layer is deposited onto an outermost metal layer and at least a portion of the passivation layer is masked with a photoresist. A pit is etched through the photoresist in the substrate, said pit having a base and sidewalls. Etching is carried out along an edge of the substrate to expose the last metal layer to define bonding pads. A step of etching is carried out on either side of the pit to expose the outermost metal layer to define electrode portions. The bonding pads are for operatively connecting a microprocessor for controlling a heater element suspended in the pit between the electrode portions.

Abstract translation: 提供了一种用于微机电系统（MEMS）制造工艺的衬底制备方法。 该方法包括在硅晶片衬底上沉积散布有层间电介质（ILD）层的至少四个金属层的步骤。 钝化层沉积在最外层的金属层上，钝化层的至少一部分被光刻胶掩蔽。 通过衬底中的光致抗蚀剂蚀刻凹坑，所述凹坑具有基底和侧壁。 沿着衬底的边缘进行蚀刻以暴露最后的金属层以限定焊盘。 在凹坑的任一侧进行蚀刻步骤以露出最外层金属层以限定电极部分。 接合焊盘用于可操作地连接微处理器，用于控制悬挂在电极部分之间的凹坑中的加热器元件。

公开(公告)号：US20090053898A1

公开(公告)日：2009-02-26

申请号：US11894316

申请日：2007-08-21

Applicant: Swaroop K. Kommera ,  Siddhartha Bhowmik ,  Richard J. Oram ,  Sriram Ramamoorthi ,  David M. Braun

Inventor： Swaroop K. Kommera ,  Siddhartha Bhowmik ,  Richard J. Oram ,  Sriram Ramamoorthi ,  David M. Braun

IPC: H01L21/311

CPC classification number: B81C1/00087 ,  B41J2/16 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B81B2201/052 ,  H01L21/76898

Abstract: A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.

Abstract translation: 形成通过硅衬底的第一侧到达硅衬底的第二侧的槽。 沟槽是激光图案。 沟槽在硅衬底的第一侧具有口。 沟槽没有到达硅衬底的第二面。 沟槽被干蚀刻直到沟槽的至少一部分的深度大致延伸到硅衬底（12）的第二侧。 执行湿蚀刻以完成槽的形成。 湿蚀刻从沟槽的所有表面蚀刻硅。

公开(公告)号：US20080299769A1

公开(公告)日：2008-12-04

申请号：US11755437

申请日：2007-05-30

Applicant: Tsung-Cheng Huang ,  Hua-Shu Wu ,  Fa-Yuan Chang ,  I-Ching Lin ,  Hsi-Lung Lee ,  Yuan-Hao Chien

Inventor： Tsung-Cheng Huang ,  Hua-Shu Wu ,  Fa-Yuan Chang ,  I-Ching Lin ,  Hsi-Lung Lee ,  Yuan-Hao Chien

IPC: H01L21/463

CPC classification number: B81C1/00634 ,  B81B2201/052

Abstract: A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The corrosion resistant film is deposited, so that a first portion of the corrosion resistant film is above the sacrificial material in the first region, and a second portion of the corrosion resistant film is above the second region. The first portion of the corrosion resistant film is removed by chemical mechanical polishing. The sacrificial material is removed from the first region using an etching process that selectively etches the sacrificial material, but not the corrosion resistant film.

Abstract translation: 一种方法包括在基底上方的第一区域中沉积牺牲材料层。 衬底的第一区域与衬底的第二区域分离，其中在第二区域上方设置耐腐蚀膜。 沉积耐腐蚀膜，使得耐腐蚀膜的第一部分在第一区域中的牺牲材料之上，并且耐腐蚀膜的第二部分高于第二区域。 通过化学机械抛光除去耐腐蚀膜的第一部分。 使用选择性蚀刻牺牲材料而不是耐腐蚀膜的蚀刻工艺从第一区域去除牺牲材料。