公开(公告)号：EP0665590B1

公开(公告)日：1999-09-22

申请号：EP95300521.2

申请日：1995-01-27

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yagi, Takayuki, c/o Canon K.K. ,  Akaike, Masatake, c/o Canon K.K.

IPC: H01L23/00 ,  H02N1/00 ,  G01B7/00 ,  H01H59/00 ,  H02K57/00 ,  G01B7/34

CPC classification number: B81C1/0092 ,  B81B2203/0118 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2203/031 ,  H01H59/0009 ,  H02N1/006

公开(公告)号：EP0665590A3

公开(公告)日：1996-02-07

申请号：EP95300521.2

申请日：1995-01-27

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yagi, Takayuki, c/o Canon K.K. ,  Akaike, Masatake, c/o Canon K.K.

IPC: H01L23/00 ,  H02N1/00 ,  G01B7/00 ,  H01H59/00 ,  H02K57/00 ,  G01B7/34

CPC classification number: B81C1/0092 ,  B81B2203/0118 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2203/031 ,  H01H59/0009 ,  H02N1/006

Abstract: A microstructure comprising a substrate (1), a patterned structure (beam member) (2) suspended over the substrate (1) with an air-space (4) therebetween and supporting structure (3) for suspending the patterned structure (2) over the substrate (1). The microstructure is prepared by using a sacrificial layer (7) which is removed to form the space between the substrate (1) and the patterned structure (2) adhered to the sacrificial layer. In the case of using resin as the material of the sacrificial layer, the sacrificial layer can be removed without causing sticking, and an electrode can be provided on the patterned structure. The microstructure can have application as electrostatic actuator etc., depending on choice of shape and composition.

公开(公告)号：EP3344574A1

公开(公告)日：2018-07-11

申请号：EP16829011.2

申请日：2016-07-13

Applicant: General Electric Company

Inventor： BREWER, Joleyn Eileen ,  KEIMEL, Christopher Fred ,  AIMI, Marco Francesco ,  MINNICK, Andrew James ,  RUFFALO, Renner Stephen

IPC: B81B3/00

CPC classification number: B81B3/0027 ,  B81B3/0075 ,  B81B7/0003 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2201/0228 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/053 ,  B81B2207/015 ,  B81B2207/115 ,  B81C1/00134 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00373 ,  B81C2201/0107 ,  G01L9/0042 ,  G01L9/0044

Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

公开(公告)号：EP3237326A1

公开(公告)日：2017-11-01

申请号：EP16780394.9

申请日：2016-01-05

Applicant: The Government of the United States of America, as represented by the Secretary of the Navy

Inventor： MEYER, David J. ,  DOWNEY, Brian P.

IPC: B81C1/00 ,  B81B7/00 ,  B81B7/02 ,  H01L27/04

CPC classification number: B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

Abstract: A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

Abstract translation: 一种用于制造包括部分或完全悬置在衬底上的外延半导体功能层的悬置微机电系统（MEMS）结构的工艺。 牺牲释放层和功能器件层形成在衬底上。 对功能器件层进行蚀刻以在功能器件层中形成窗口，从而界定将从功能器件层形成的悬置MEMS器件的轮廓。 然后用选择性释放蚀刻剂蚀刻牺牲释放层以去除由窗口限定的区域中的功能层下面的牺牲释放层以形成悬浮的MEMS结构。

公开(公告)号：EP2004278B1

公开(公告)日：2015-08-05

申请号：EP07703069.0

申请日：2007-01-26

Applicant: Pixium Vision SA

Inventor： TIEDTKE, Hans-Jürgen

IPC: A61N1/05 ,  B81B3/00

CPC classification number: A61N1/05 ,  A61N1/0543 ,  A61N1/0551 ,  B81C99/008 ,  B81C2201/0107 ,  B81C2201/0181 ,  Y10T428/12493

公开(公告)号：EP2753573A2

公开(公告)日：2014-07-16

申请号：EP12770305.6

申请日：2012-08-27

Applicant: Qualcomm Mems Technologies, Inc.

Inventor： STEPHANOU, Philip Jason ,  LONDERGAN, Ana Rangelova ,  GOUSEV, Evgeni Petrovich ,  SHENOY, Ravindra Vaman

IPC: B81C1/00 ,  C25D5/10 ,  C25D5/18 ,  C23C28/02

CPC classification number: B81C1/0038 ,  B81B2203/0392 ,  B81C2201/0107 ,  B81C2201/0188 ,  B81C2201/038 ,  C23C18/1653 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D7/00 ,  Y10T428/12493 ,  Y10T428/24612

Abstract: This disclosure provides implementations of high surface area stacked layered metallic structures, devices, apparatus, systems, and related methods. A plurality of stacked layers on a substrate may be manufactured from a plating bath including a first metal and a second metal. A modulated plating current can deposit alternate first metal layers and alloy layers, the alloy layers including the first metal and the second metal. Gaps between the alloy layers can be formed by selectively etching some portions of the first metal layers to define a stacked layered structure. Stacked layered structures may be useful in applications to form capacitors, inductors, catalytic reactors, heat transfer tubes, non-linear springs, filters, batteries, and heavy metal purifiers.

公开(公告)号：EP1840081A3

公开(公告)日：2012-08-01

申请号：EP07006353.2

申请日：2007-03-28

Applicant: IMEC ,  Katholieke Universiteit Leuven (KUL)

Inventor： Witvrouw, Ann ,  Hellin Rico, Raquel ,  Celis, Jean-Pierre

IPC: B81C1/00

CPC classification number: B81C1/00293 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81C2201/0107 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10T428/249953

Abstract: A method is provided for forming hermetically sealed cavities (20), e.g. semiconductor cavities comprising fragile devices, MEMS or NEMS devices (12). The method according to embodiments of the present invention allows forming hermetically sealed cavities (20) at a controlled atmosphere and pressure and at low temperatures, preferably at temperatures not exceeding 200°C. The method furthermore allows forming sealed cavities (20) with short release times, for example release times of a few minutes to 30 minutes. The method may for example be used for zero level packaging of MEMS or NEMS devices.

公开(公告)号：EP1454333B1

公开(公告)日：2007-09-12

申请号：EP02797085.4

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： CUNNINGHAM, Shawn, J. ,  DEREUS, Dana, R. ,  Sett, Subham ,  TATIC-LUCIC, Svetlana

IPC: B81B3/00 ,  B81B7/00 ,  H01H59/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A movable, trilayered microcomponent (108) suspended over a substrate (102) is provided and includes a first electrically conductive layer (116) patterned to define a movable electrode (114). The first metal layer (116) is separated from the substrate (102) by a gap. The microcomponent (108) further includes a dielectric layer formed (112) on the first metal layer (116) and having an end fixed with respect to the substrate (102). Furthermore, the microcomponent (102) includes a second electrically conductive layer (120) formed on the dielectric layer (112) and patterned to define an electrode interconnect (124) for electrically communicating with the movable electrode (114).

公开(公告)号：EP1576207A2

公开(公告)日：2005-09-21

申请号：EP03726752.3

申请日：2003-05-07

Applicant: Microfabrica Inc.

Inventor： BANG, Christopher, A.

IPC: C25D1/00

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFABTM formation process), and typically contain features having resolutions within the 1 to 100 µm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and iohardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了用于制造模制结构的模制结构，方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其它模具部件组合，并将模塑材料注入模具中并硬化。 分层结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

公开(公告)号：EP1454349A2

公开(公告)日：2004-09-08

申请号：EP02793902.4

申请日：2002-11-08

Applicant: Coventor, Incorporated ,  Turnstone Systems Inc.

Inventor： CUNNINGHAM, Shawn, J. ,  TATIC-LUCIC, Sveltana

IPC: H01L21/302 ,  H01L21/4763 ,  H01P1/10 ,  H01H57/00 ,  H02B1/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A method for fabricating a trilayered beam MEMS device includes depositing a sacrificial layer (310) on a substrate and depositing and removing a portion of a first conductive layer on the sacrificial layer (310) to form a first conductive microstructure (312); depositing a structural layer (322) on the first conductive microstructure (312); the sacrificial layer (310), and the substrate (300) and forming a via through the structural layer (322) to the first conductive microstructure (312); depositing a second conductive layer (336) on the structural layer (322) and in the via; forming a second conductive microstructure (324) by removing a portion of the second conductive layer (336), wherein the second conductive microstructure (324) electrically communicates with the first conductive microstructure (312) through the via; and removing a sufficient amount of the sacrificial layer (310) so as to separate the first conductive microstructure (312) from the substrate, wherein the structural layer (322) is supported by the substrate at a first end is freely suspended above the substrate at an opposing second end.