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公开(公告)号：KR1020040050101A
公开(公告)日：2004-06-16
申请号：KR1020020077670
申请日：2002-12-09
Applicant: 한국전자통신연구원
IPC: H04B7/00
CPC classification number: H04L12/66
Abstract: PURPOSE: A Bluetooth access system is provided to supply a Bluetooth access device mounted with a fast retrieval support module having broadband high capacity, and to supply a Bluetooth terminal, thereby carrying out a fast access process with broadband high capacity. CONSTITUTION: A Bluetooth access device(100) has at least more than one Bluetooth access point including the first search support module(110) that consists of a database(108) for storing Bluetooth addresses of adjacent access points and an automation unit necessary for a fast retrieval request and a response. A terminal(200) has at least more than one Bluetooth access point including the second search module(210) that consists of a database(208) for storing Bluetooth addresses of adjacent access points and an automation unit necessary for a fast retrieval request and a response. A communication link(300) consists of a fast retrieval request information unit(310) and a fast retrieval response information unit(320).
Abstract translation: 目的：提供一种蓝牙接入系统，用于提供安装有宽带高容量的快速检索支持模块的蓝牙接入设备，并提供蓝牙终端，从而进行宽带高容量的快速接入过程。 规定：蓝牙接入设备（100）具有至少多于一个的蓝牙接入点，包括第一搜索支持模块（110），其包括用于存储相邻接入点的蓝牙地址的数据库（108）和用于 快速检索请求和响应。 终端（200）具有至少多于一个的蓝牙接入点，包括第二搜索模块（210），该第二搜索模块包括用于存储相邻接入点的蓝牙地址的数据库（208）和快速检索请求所需的自动化单元 响应。 通信链路（300）由快速检索请求信息单元（310）和快速检索响应信息单元（320）组成。
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公开(公告)号：KR100419576B1
公开(公告)日：2004-02-19
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供一种具有阴极电极的电镀装置，通过改善阴极电极和电镀杯的结构，从而实现电镀的高均匀性和高效率，由此解决不均匀的电镀问题并抑制电镀速度的恶化。 本发明的目的在于提供一种电镀装置，该电镀装置包括用于通过流动式电镀对晶片进行电镀的电镀杯（20），用于密封电镀杯的头部和用于将正电源施加到晶片（22）的阳极电极板， 设备包括一个阴极板（21），该阴极板包括一个环（21e），该环被接收在电镀杯中并与电镀杯的底表面间隔开一定的距离，并且晶片与 其中，所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧以使与所述晶片接触的所述电镀液循环至外部，所述电镀液的直径 所述电镀杯大于所述晶片的电镀杯，并且所述阴极电极板包括圆柱形部分（21a）; 凸缘部（21b），其从所述筒部的上表面向外侧延伸; 底部（21c），其从所述筒部的下表面向内侧延伸; 以及从所述筒部的所述底部向所述筒部的上表面方向延伸的突出部，所述突出部与所述筒部的所述内周面隔开一定距离，所述环（21e）为 在突出部分上膨胀并形成。
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公开(公告)号：KR100417126B1
公开(公告)日：2004-02-05
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: 본 발명은 플립 칩(Flip chip) 방식의 반도체 소자의 접속단자인 범프를 형성하는 방법에 관한 것으로, 입출력패드가 형성된 반도체칩 상에 보호막을 형성하는 단계, 상기 보호막을 선택적으로 식각하여 상기 입출력패드의 표면을 노출시키는 단계, 상기 노출된 입출력패드를 포함한 상기 보호막 상에 금속기저층을 형성하는 단계, 상기 금속기저층 상에 도금법을 이용하여 도금층을 형성하는 단계, 상기 도금층 상에 감광막을 도포하고 선택적으로 패터닝하여 감광막패턴을 형성하는 단계, 상기 감광막패턴을 식각 마스크로 이용하여 상기 도금층과 금속기저층을 순차적으로 식각하는 단계, 및 상기 도금층에 열을 가하여 상기 금속기저층 상에 상기 도금층으로 된 범프를 형성하는 단계를 포함한다.
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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公开(公告)号：KR1020020093297A
公开(公告)日：2002-12-16
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供具有阴极电极的电镀装置，通过改善阴极和电镀杯的结构来实现电镀的高均匀性和效率，从而解决不均匀电镀问题并抑制电镀速度的劣化。 构成：在电镀设备中，包括用于通过流动电镀电镀晶片的电镀杯（20），用于密封电镀杯的头和用于将正电源施加到晶片（22）的阳极电极板，电镀 装置包括阴极电极板（21），其包括环（21e），所述环（21e）被接收在电镀杯中，与电镀杯的底表面间隔开一定距离，并且晶片在 低于电镀杯的上表面，其中所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧，以将与所述晶片接触的电镀溶液循环到外部， 电镀杯大于晶片的电镀杯，阴极电极板包括圆筒部分（21a）; 凸缘部（21b），其从所述气缸部的上表面延伸到外侧; 底部（21c），其从所述气缸部的下表面延伸到所述内侧; 以及突出部（21d），其从所述圆筒部的底部延伸到上表面方向，其中所述突出部与所述圆筒部的内周面间隔开一定距离，其中，所述环（21e）为 在突起部分上膨胀并形成。
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公开(公告)号：KR1020020092041A
公开(公告)日：2002-12-11
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: PURPOSE: A bump formation method is provided to easily achieve a high density and a high aspect ration and to simplify manufacturing processes by minimizing a stress due to a thermal expansive coefficient between a chip and a substrate. CONSTITUTION: A protection layer(23) is formed on a semiconductor substrate(21) having an input and an output pad(22). An UBM(Under Ball Metallurgy)(24) and a plating film are sequentially formed on the protection layer(23). The plating layer and the UBM(24) are sequentially patterned by wet-etching or dry-etching of spray method using a photoresist pattern as a mask. After coating a resin flux on the plating layer, the resin flux reflows in nitrogen atmosphere, thereby forming a bump(25a).
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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Patent Agency Ranking
公开(公告)号：KR100358359B1
公开(公告)日：2002-10-25
申请号：KR1019990064450
申请日：1999-12-29
Applicant: 한국전자통신연구원
IPC: H04B7/26
Abstract: 본발명은 3G DS 시스템셀로부터 2G 또는 3G 동기시스템셀로의핸드오버방법을제공한다. 이방법은, 상기무선망제어국이핸드오버타입을결정하고이에기초하여인접한셀의 PN 옵셋을전송하는단계, 상기사용자단말이압축모드를이용하여상기 2G 또는 3G 동기시스템셀로부터의파일롯신호를수신하는단계, 및상기무선망제어국으로부터의상기 PN 옵셋값및 상기수신된파일롯신호에기초하여타깃기지국을식별하고제로옵셋을추출하는단계를구비한다. 이러한방법을통하여 3G DS 시스템셀로부터 2G 또는 3G 동기시스템셀로의핸드오버에요구되는시스템동기를획득할수 있게되고, 타깃기지국을식별할수 있게된다.
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公开(公告)号：KR1020020054112A
公开(公告)日：2002-07-06
申请号：KR1020000082807
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H01L23/00
Abstract: PURPOSE: A method for fabricating a multichip module(MCM) substrate having a passive device is provided to reduce the size of the MCM substrate and to increase a signal rate of an MCM, by increasing interconnection density of the MCM substrate. CONSTITUTION: The first metal layer as a power layer, the second metal layer(114) and the third metal layer are sequentially formed on a base substrate of the MCM substrate. A capacitor and a resistor are formed between the power layer and the second metal layer in the same process. The resistor is made of NiCr. The power layer, the second metal layer and the third metal are stack structures composed of a seed metal layer and a main metal layer.
Abstract translation: 目的：提供一种用于制造具有无源器件的多芯片模块（MCM）衬底的方法，以通过增加MCM衬底的互连密度来减小MCM衬底的尺寸并增加MCM的信号速率。 构成：作为功率层的第一金属层，第二金属层（114）和第三金属层依次形成在MCM基板的基底基板上。 在同一工艺中，在功率层和第二金属层之间形成电容器和电阻器。 电阻由NiCr制成。 功率层，第二金属层和第三金属是由种子金属层和主金属层构成的堆叠结构。
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公开(公告)号：KR1020010076621A
公开(公告)日：2001-08-16
申请号：KR1020000003872
申请日：2000-01-27
Applicant: 한국전자통신연구원
IPC: H03B5/32
Abstract: PURPOSE: A surface acoustic wave(SAW) oscillator module using low temperature co-fired ceramic substrate is provided to reduce stray capacitance component of the SAW oscillator and broaden a frequency trimming region as much as the frequency shift can be amended, thereby correctly synchronizing the output frequency of a temperature compensation oscillator or a reference frequency generator with a frequency requiring each kind of wireless communication machine. CONSTITUTION: A passive element array installed onto a low temperature co-fired ceramic substrate(17) and includes a selective switch, which is controlled by a digital signal, adjusting the entire inductance or capacitance. A SAW oscillator(10) installed onto a low temperature co-fired ceramic substrate(17) and provides stable oscillated frequency. An IC chip(16) includes a control circuit which controls the passive element array and circuit related to oscillation and temperature compensation, if it is necessary to compensate for them.
Abstract translation: 目的：提供一种使用低温共烧陶瓷基板的表面声波（SAW）振荡器模块，以减少SAW振荡器的杂散电容分量，并可以使频率修整区域变宽，可以修改频移，从而正确地同步 具有需要各种无线通信机的频率的温度补偿振荡器或参考频率发生器的输出频率。 构成：安装在低温共烧陶瓷基板（17）上的无源元件阵列，并包括由数字信号控制的选择开关，调节整个电感或电容。 安装在低温共烧陶瓷基片（17）上的SAW振荡器（10）并提供稳定的振荡频率。 如果需要补偿它们，则IC芯片（16）包括控制无源元件阵列和与振荡和温度补偿相关的电路的控制电路。
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公开(公告)号：KR1020010076614A
公开(公告)日：2001-08-16
申请号：KR1020000003865
申请日：2000-01-27
Applicant: 한국전자통신연구원
IPC: H01L21/28
Abstract: PURPOSE: A method for manufacturing a metal line by an electroplating in process for manufacturing a multi-chip module substrate is provided to prevent a plating solution from being permeated in beneath a photosensitive film by forming an insulating film increasing the adhesive force between a photosensitive film and a seed metal. CONSTITUTION: The method includes seven steps. The first step is(S1) to coat the surface of a wafer with the first insulating film. The second step(S2) is to deposit a seed metal for plating on the upper portion of the first insulating film using sputtering. The third step(S3) is to deposit the second insulating film on the sputtered seed metal. The fourth step(S4) is to coat a photosensitive film on the second insulating film. The fifth step(S5) is to expose and develop a pattern to plate and then etch the second insulating film formed on part from which the photosensitive film is removed. The sixth step(S6) is to electroplate a resultant of the fifth step with a conductive material. The seventh step(S7) is to remove the photosensitive film, etch the second insulating film and etch the seed metal to form a metal line.
Abstract translation: 目的：提供一种通过在制造多芯片模块基板的方法中的电镀制造金属线的方法，以通过形成提高感光膜之间的粘合力的绝缘膜来防止电镀液渗入到感光膜的下面 和种子金属。 规定：该方法包括七个步骤。 第一步是（S1）用第一绝缘膜涂覆晶片的表面。 第二步骤（S2）是使用溅射法在第一绝缘膜的上部上淀积用于电镀的种子金属。 第三步骤（S3）将第二绝缘膜沉积在溅射的种子金属上。 第四步骤（S4）是在第二绝缘膜上涂布感光膜。 第五步（S5）是曝光和显影图案，然后蚀刻形成在其上去除感光膜的部分上的第二绝缘膜。 第六步骤（S6）是用导电材料电镀第五步骤的结果。 第七步骤（S7）是去除感光膜，蚀刻第二绝缘膜并蚀刻种子金属以形成金属线。
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公开(公告)号：KR100296708B1
公开(公告)日：2001-08-07
申请号：KR1019980032220
申请日：1998-08-07
Applicant: 한국전자통신연구원
IPC: H01L21/28
Abstract: 본 발명은 반도체 소자의 금속 배선 형성 방법에 관한 것으로, 제 1 금속 장벽층, 금속층 및 제 2 금속 장벽층으로 이루어진 금속 배선을 형성한 후, 전체 구조 상부에 제 3 금속 장벽층을 형성하고 플라즈마 에치-백 공정을 실시하여 금속 배선 측면에 금속 스페이서를 형성하는 것으로 이루어지는 반도체 소자의 금속 배선 형성 방법이 제시된다.
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