公开(公告)号：US20160340174A1

公开(公告)日：2016-11-24

申请号：US14806201

申请日：2015-07-22

Applicant: Honeywell International Inc.

Inventor： John R. Reinke ,  Grant H. Lodden

IPC: B81B7/00 ,  B81C1/00 ,  H02N1/00

CPC classification number: B81B7/0019 ,  B81B3/0081 ,  B81B7/0087 ,  B81B2201/0228 ,  B81B2201/025 ,  B81C1/0069 ,  H02N1/00

Abstract: A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

Abstract translation: 提供了一种用于制造热隔离微机电系统（MEMS）结构的方法。 该方法包括用玻璃晶片处理第一材料的第一晶片以形成包括第一材料和玻璃的至少一个牺牲结构的复合衬底; 在第二材料中形成MEMS装置; 在所述复合衬底中的至少一个上形成至少一个温度感测元件; 和MEMS器件; 以及蚀刻所述复合衬底中的所述第一材料的所述至少一个牺牲结构以形成至少一个热隔离玻璃弯曲部。 MEMS器件通过至少一个热隔离玻璃弯曲件在热隔离台上热隔离。 所述至少一个温度感测元件位于以下各自中的至少一个中：热隔离级; 和MEMS器件。

公开(公告)号：US09227840B2

公开(公告)日：2016-01-05

申请号：US14487104

申请日：2014-09-16

Applicant: Industrial Technology Research Institute

Inventor： Chung-Yuan Su ,  Chin-Fu Kuo ,  Chih-Yuan Chen ,  Chao-Ta Huang

IPC: H01L43/06 ,  B81B7/00 ,  G01P15/00 ,  G01R33/00 ,  G01R33/028

CPC classification number: B81B7/008 ,  B81B2201/0228 ,  B81B2201/025 ,  B81B2203/0109 ,  G01P15/00 ,  G01P15/124 ,  G01P15/125 ,  G01P2015/0831 ,  G01P2015/0834 ,  G01R33/00 ,  G01R33/0286

Abstract: A micro-electro mechanical apparatus having a PN-junction is provided. The micro-electro mechanical apparatus includes a movable mass, a conductive layer, and an electrode. The movable mass includes a P-type semiconductor layer and an N-type semiconductor layer. The PN-junction is formed between the P-type semiconductor layer and the N-type semiconductor layer. The micro-electro mechanical apparatus is capable of eliminating abnormal voltage signal when an alternating current passes through the conductive layer. The micro-electro mechanical apparatus is adapted to measure acceleration and magnetic field. The micro-electro mechanical apparatus can be other types of micro-electro mechanical apparatus such as micro-electro mechanical scanning micro-mirror.

Abstract translation: 提供具有PN结的微机电装置。 微机电装置包括可移动质量块，导电层和电极。 可移动块包括P型半导体层和N型半导体层。 在P型半导体层和N型半导体层之间形成PN结。 微电子机械装置能够在交流电流通过导电层时消除异常电压信号。 微机电装置适用于测量加速度和磁场。 微电机械装置可以是其他类型的微电机械装置，例如微机电扫描微镜。

公开(公告)号：US20150183632A1

公开(公告)日：2015-07-02

申请号：US14487104

申请日：2014-09-16

Applicant: Industrial Technology Research Institute

Inventor： Chung-Yuan Su ,  Chin-Fu Kuo ,  Chih-Yuan Chen ,  Chao-Ta Huang

IPC: B81B3/00

CPC classification number: B81B7/008 ,  B81B2201/0228 ,  B81B2201/025 ,  B81B2203/0109 ,  G01P15/00 ,  G01P15/124 ,  G01P15/125 ,  G01P2015/0831 ,  G01P2015/0834 ,  G01R33/00 ,  G01R33/0286

Abstract: A micro-electro mechanical apparatus having a PN-junction is provided. The micro-electro mechanical apparatus includes a movable mass, a conductive layer, and an electrode. The movable mass includes a P-type semiconductor layer and an N-type semiconductor layer. The PN-junction is formed between the P-type semiconductor layer and the N-type semiconductor layer. The micro-electro mechanical apparatus is capable of eliminating abnormal voltage signal when an alternating current passes through the conductive layer. The micro-electro mechanical apparatus is adapted to measure acceleration and magnetic field. The micro-electro mechanical apparatus can be other types of micro-electro mechanical apparatus such as micro-electro mechanical scanning micro-mirror.

Abstract translation: 提供具有PN结的微机电装置。 微机电装置包括可移动质量块，导电层和电极。 可移动块包括P型半导体层和N型半导体层。 在P型半导体层和N型半导体层之间形成PN结。 微电子机械装置能够在交流电流通过导电层时消除异常电压信号。 微机电装置适用于测量加速度和磁场。 微电机械装置可以是其他类型的微电机械装置，例如微机电扫描微镜。

公开(公告)号：US20140268523A1

公开(公告)日：2014-09-18

申请号：US14207461

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H05K7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了一种穿戴式装置，其具有被配置成检测和测量感兴趣的不同参数的多个传感器。 可佩戴装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 可穿戴设备将待测量的第一参数直接耦合到直接传感器。 相反，可佩戴装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上将其它传感器添加到可穿戴装置中。 这支持集成多个传感器，以减少外形，成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US20050230708A1

公开(公告)日：2005-10-20

申请号：US11028370

申请日：2005-01-03

Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  C30B1/00

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US06582985B2

公开(公告)日：2003-06-24

申请号：US09748488

申请日：2000-12-27

Applicant: Cleopatra Cabuz ,  Jeffrey Alan Ridley

Inventor： Cleopatra Cabuz ,  Jeffrey Alan Ridley

IPC: H01L2100

CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019 ,  H01L27/12 ,  H01L27/1203

Abstract: Methods for making thin silicon layers suspended over recesses in glass wafers. One method includes providing a thin silicon-on-insulator (SOI) wafer, and a glass wafer. The SOI wafer can include a silicon oxide layer disposed between a first undoped or substantially undoped silicon layer and a second silicon layer. Recesses can be formed in the glass wafer surface and electrodes may be formed on the glass wafer surface. The first silicon layer of the SOI wafer is then bonded to the glass wafer surface having the recesses, and the second silicon layer is subsequently removed using the silicon oxide layer as an etch stop. Next, the silicon oxide layer is removed. The first silicon layer can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer has a patterned metal layer thereon. The SOI wafer is bonded to the glass wafer, with the patterned metal layer positioned adjacent the recesses in the glass wafer. Then, the second silicon layer is removed using the silicon oxide layer as an etch stop, and the silicon oxide layer is subsequently removed. The first silicon layer is then etched using the patterned metal layer as an etch stop. The patterned metal layer is then removed.

公开(公告)号：US20020081821A1

公开(公告)日：2002-06-27

申请号：US09748488

申请日：2000-12-27

Inventor： Cleopatra Cabuz ,  Jeffrey Alan Ridley

IPC: H01L021/00 ,  H01L021/84 ,  H01L021/30 ,  H01L021/46

CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019 ,  H01L27/12 ,  H01L27/1203

Abstract: Methods for making thin silicon layers suspended over recesses in glass wafers. One method includes providing a thin silicon-on-insulator (SOI) wafer, and a glass wafer. The SOI wafer can include a silicon oxide layer disposed between a first undoped or substantially undoped silicon layer and a second silicon layer. Recesses can be formed in the glass wafer surface and electrodes may be formed on the glass wafer surface. The first silicon layer of the SOI wafer is then bonded to the glass wafer surface having the recesses, and the second silicon layer is subsequently removed using the silicon oxide layer as an etch stop. Next, the silicon oxide layer is removed. The first silicon layer can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer has a patterned metal layer thereon. The SOI wafer is bonded to the glass wafer, with the patterned metal layer positioned adjacent the recesses in the glass wafer. Then, the second silicon layer is removed using the silicon oxide layer as an etch stop, and the silicon oxide layer is subsequently removed. The first silicon layer is then etched using the patterned metal layer as an etch stop. The patterned metal layer is then removed.

Abstract translation: 使薄硅层悬浮在玻璃晶片中的凹槽上的方法。 一种方法包括提供薄的绝缘体上硅（SOI）晶片和玻璃晶片。 SOI晶片可以包括设置在第一未掺杂或基本未掺杂的硅层和第二硅层之间的氧化硅层。 可以在玻璃晶片表面中形成凹部，并且可以在玻璃晶片表面上形成电极。 然后将SOI晶片的第一硅层接合到具有凹陷的玻璃晶片表面，并且随后使用氧化硅层作为蚀刻停止来去除第二硅层。 接下来，去除氧化硅层。 然后可以蚀刻第一硅层以形成所需的结构。 在另一说明性实施例中，第一硅层在其上具有图案化的金属层。 SOI晶片结合到玻璃晶片，图案化的金属层位于玻璃晶片中的凹槽附近。 然后，使用氧化硅层作为蚀刻停止层去除第二硅层，随后除去氧化硅层。 然后使用图案化的金属层作为蚀刻停止来蚀刻第一硅层。 然后去除图案化的金属层。

公开(公告)号：KR1020170045297A

公开(公告)日：2017-04-26

申请号：KR1020177008032

申请日：2015-06-23

Applicant: 로베르트 보쉬 게엠베하

Inventor： 슈툼버미햐엘 ,  슈타인베네딕트 ,  셸링크리스토프

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0086 ,  B81B2201/01 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81C1/00801

Abstract: 본발명은, 멤스소자(102)의층 구조내에전극(7)을갖는자가지지식구조요소(31)를구현하기에매우적합한층 재료에관한것이다. 본발명에따라, 자가지지식구조요소(31)는적어도부분적으로실리콘카르보니트라이드(SiCN)에기반한층으로형성된다.

Abstract translation: 本发明涉及一种非常适合于在MEMS元件（102）的层结构中实现具有电极（7）的自组织结构元件（31）的层材料。 根据本发明，自组织结构元件31至少部分地由基于碳氮化硅（SiCN）的层形成。

公开(公告)号：KR101240918B1

公开(公告)日：2013-03-11

申请号：KR1020120098545

申请日：2012-09-06

Applicant: 주식회사 티엘아이

Inventor： 홍순원

IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/125

CPC classification number: B81B7/02 ,  B81B3/0035 ,  B81B2201/0228 ,  B81C1/00015 ,  G01P15/125

Abstract: PURPOSE: An inertia sensor package having a protective cap with plate electrodes and a method for manufacturing the same are provided to remarkably reduce an area of an MEMS device as an inertia sensor is electrically connected to a driving chip by a pad formed on the upper part of the protective cap. CONSTITUTION: A method for manufacturing an inertia sensor package is as follows. An MEMS(Microelectromechanical System) device including a first plate electrode formed on a semiconductor is formed(S10). A protective cap including a second plate electrode is formed(S20). The protective cap is attached to the MEMS device so that the first and second plate electrodes are faced to each other(S30). [Reference numerals] (AA) Start; (BB) End; (S10) Forming a MEMS device including a movable plate electrode of an inertia sensor; (S20) Forming a protective cap provided with a fixed plate electrode of the inertia sensor by filling a via hole with an insulating material; (S30) Attaching the protective cap to the top of the MEMS device so that the fixed and movable plate electrodes are faced to each other

Abstract translation: 目的：提供具有带板电极的保护帽的惯性传感器封装及其制造方法，用于显着地减小MEMS器件的面积，因为惯性传感器通过形成在上部的衬垫电连接到驱动芯片 的保护帽。 构成：惯性传感器组件的制造方法如下。 形成包括形成在半导体上的第一平板电极的MEMS（微机电系统）装置（S10）。 形成包括第二平板电极的保护帽（S20）。 保护盖连接到MEMS器件，使得第一和第二平板电极彼此面对（S30）。 （附图标记）（AA）开始; （BB）结束; （S10）形成包括惯性传感器的可动板电极的MEMS装置; （S20）通过用绝缘材料填充通孔来形成设置有惯性传感器的固定板电极的保护盖; （S30）将保护帽安装在MEMS器件的顶部，使得固定和可动板电极彼此面对

公开(公告)号：KR1020110077582A

公开(公告)日：2011-07-07

申请号：KR1020090134206

申请日：2009-12-30

Applicant: 주식회사 아모센스

Inventor： 장길재 ,  강대희

IPC: G01C21/10 ,  G01P15/00 ,  G01C19/00 ,  B81B7/02

CPC classification number: G01C25/00 ,  B81B7/02 ,  B81B2201/0228 ,  G01C19/00 ,  G01C21/10 ,  H01L24/97

Abstract: PURPOSE: An integrated 6-axis sensor for motion capturing and a manufacturing method thereof are provided to remarkably reduce the size of the 6-axis sensor by directly installing a magnetic sensor in a protective cap. CONSTITUTION: An integrated 6-axis sensor for motion capturing comprises a dynamic sensor(201), a protective cap(200), and magnetic sensors(203a,203b,203c). The dynamic sensor is coupled to a circuit board(202). The protective cap is installed on the top of the dynamic sensor and protects the dynamic sensor. The magnetic sensors are installed on the top of the protective cap and are electrically connected to the circuit board through a wire.

Abstract translation: 目的：提供一种用于运动捕捉的集成6轴传感器及其制造方法，通过将磁传感器直接安装在保护盖中，显着降低6轴传感器的尺寸。 构成：用于运动捕捉的集成6轴传感器包括动态传感器（201），保护盖（200）和磁传感器（203a，203b，203c）。 动态传感器耦合到电路板（202）。 保护盖安装在动态传感器的顶部，并保护动态传感器。 磁性传感器安装在保护盖的顶部，并通过导线与电路板电连接。