公开(公告)号：WO01057920A1

公开(公告)日：2001-08-09

申请号：PCT/US2001/002661

申请日：2001-01-29

IPC: H01L21/316 ,  B81B3/00 ,  B81C1/00 ,  H01L21/312 ,  H01L21/31 ,  H01L21/00 ,  H01L21/469

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention disclosed a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

Abstract translation: 本发明公开了一种在微加工结构上形成耐久抗静电表面的方法，同时它们仍然是晶片形式（即，在它们被分离成用于组装成包装的分立装置之前）。 该方法涉及材料的气相沉积以产生低粘度表面。 它还公开了有效赋予芯片抗静电性能的化学品。 这些包括聚苯基硅氧烷，硅烷醇封端的苯基硅氧烷和类似的材料。

公开(公告)号：WO01046458A1

公开(公告)日：2001-06-28

申请号：PCT/US2000/034411

申请日：2000-12-19

IPC: G01N27/62 ,  B81B3/00 ,  B81C1/00 ,  C12Q1/02 ,  C12Q1/68 ,  C23C16/24 ,  C23C16/511 ,  G01N1/28 ,  G01N21/17 ,  G01N27/447 ,  G01N30/04 ,  G01N33/48 ,  G01N33/543 ,  G01N33/552 ,  G01N33/68 ,  C12Q1/00 ,  G01N15/06 ,  G01N21/29 ,  G01N21/41 ,  G01N21/47 ,  G01N27/00 ,  G01N33/00 ,  G01N33/53 ,  G01N33/567

CPC classification number: C23C16/511 ,  B81B2201/0214 ,  B81C1/0038 ,  B81C2201/0176 ,  C23C16/24 ,  G01N21/17 ,  G01N27/44717 ,  Y10T436/119163 ,  Y10T436/25 ,  Y10T436/2575

Abstract: The present invention is directed to the use of deposited thin films for chemical or biological analysis. The invention further relates to the use of these thin films in separation adherence and detection of chemical of biological samples. Applications of these thin films include desorption-ionization mass spectroscopy, electrical contacts for organic thin films and molecules, optical coupling of light energy for analysis, biological materials manipulation, chromatographic separation, head space adsorbance media, media for atomic molecular adsorbance or attachment, and substrates for cell attachment.

Abstract translation: 本发明涉及使用沉积的薄膜进行化学或生物分析。 本发明还涉及这些薄膜在分离粘附和生物样品化学检测中的应用。 这些薄膜的应用包括解吸电离质谱，有机薄膜和分子的电接触，用于分析的光能的光耦合，生物材料操作，色谱分离，顶空吸附介质，用于原子分子吸附或附着的介质，以及 细胞附着物。

公开(公告)号：JP2017522814A

公开(公告)日：2017-08-10

申请号：JP2017502655

申请日：2014-07-17

Applicant: エプコス アクチエンゲゼルシャフトEpcos Ag ,  エプコス アクチエンゲゼルシャフトEpcos Ag

Inventor： クルト ラスムッセン， ,  クルト ラスムッセン，

IPC: H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R31/00

CPC classification number: H04R19/04 ,  B81B7/007 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/0104 ,  B81C2201/0176 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003

Abstract: 本発明は、1つの基板(5)を備えるトランスデューサ素子(1)に関し、この基板は、この基板(5)を貫通して延伸する1つのキャビティ(23),この基板(5)のキャビティ(23)内に配設されている1つのバックプレート(3),およびこのバックプレート(3)に対して可動な1つのメンブレン(2)を備える。さらに、本発明は、トランスデューサ素子(1)を製造する方法に関する。【選択図】図1

公开(公告)号：JP4908202B2

公开(公告)日：2012-04-04

申请号：JP2006509406

申请日：2004-03-30

Applicant: ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングRobert Bosch Gmbh

Inventor： クローンミュラー，ズィルヴィア ,  パートリッジ，アーロン ,  ルッツ，マルクス

IPC: B81C3/00 ,  B81B3/00 ,  H01L20060101 ,  H01L21/44 ,  H01L23/28 ,  H01L23/48 ,  H01L23/52 ,  H01L27/14 ,  H01L29/40 ,  H01L29/82 ,  H01L29/84

CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

公开(公告)号：JP2011245620A

公开(公告)日：2011-12-08

申请号：JP2011183879

申请日：2011-08-25

Applicant: Robert Bosch Gmbh ,  ロベルト・ボッシュ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツングRobert Bosch Gmbh

Inventor： PARTRIDGE AARON ,  LUTZ MARKUS ,  KRONMUELLER SILVIA

IPC: B81C1/00 ,  H01L20060101 ,  H01L21/44 ,  H01L23/06 ,  H01L23/28 ,  H01L23/48 ,  H01L23/52 ,  H01L27/14 ,  H01L29/40 ,  H01L29/82 ,  H01L29/84

CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a MEMS (gyroscope, a resonator, a temperature sensor and/or an accelerometer, for example), capable of integrating a high performance integrated circuit and/or an additional MEMS on a common substrate.SOLUTION: A material encapsulating mechanical structures when attached has one or more of properties relating to integrating. That is, in the material, a tensile stress is low, a step coverage is good, the integrity is maintained when a subsequent processing is applied, the material does not significantly and/or adversely impact the performance characteristics of the mechanical structures in a chamber (in the case of not being coated with the material during attaching) and/or facilitates the integration with the high performance integrated circuits. In one embodiment, the material encapsulating the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon germanium, germanium, or gallium arsenide.

Abstract translation: 要解决的问题：提供能够在公共基板上集成高性能集成电路和/或附加MEMS的MEMS（例如，陀螺仪，谐振器，温度传感器和/或加速度计）。 解决方案：当附着时封装机械结构的材料具有与积分相关的一个或多个属性。 也就是说，在材料中，拉伸应力低，台阶覆盖良好，当应用后续处理时，完整性得到保持，材料不会明显地和/或不利地影响室内的机械结构的性能特性 （在附着时不涂覆材料的情况）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅锗，锗或砷化镓。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009515282A

公开(公告)日：2009-04-09

申请号：JP2008538415

申请日：2006-11-02

Applicant: キャベンディッシュ・キネティックス・リミテッド

Inventor： ロベルト カチンチ ,  ロベルト ファン・カンペン

IPC: G11B9/14 ,  B81B3/00 ,  B81C1/00 ,  G11C23/00 ,  H01H51/12 ,  H01H59/00 ,  H01L27/10

CPC classification number: H01H59/0009 ,  B81C1/0015 ,  B81C2201/014 ,  B81C2201/0176 ,  G11C23/00 ,  H01H51/12

Abstract: 不揮発性メモリデバイス、及び不揮発性マイクロエレクトロメカニカルメモリセルを製造する方法。 この方法は、原子層堆積法を用いて犠牲材料第１層を基板上に堆積させる第１の工程を有する。 この方法の第２の工程は、犠牲材料第１層の少なくとも一部分上にカンチレバー（１０１）を設けることである。 第３の工程は、原子層堆積法を用いて犠牲材料第２層を犠牲材料第１層上に、またカンチレバーの一部が犠牲材料によって囲まれるようにカンチレバーの一部の上に堆積させることである。 第４の工程は、犠牲材料第２層の少なくとも一部分を覆う別材料層（１０７）を設けることである。 最後に、最終工程は、カンチレバーを囲む犠牲材料をエッチングによって除去し、カンチレバーが内部に懸設されるキャビティ（１０２）を規定する工程である。
【選択図】図１

公开(公告)号：JP2004084073A

公开(公告)日：2004-03-18

申请号：JP2003298568

申请日：2003-08-22

Applicant: Eastman Kodak Co ,  イーストマン コダック カンパニー

Inventor： YANG ZHIHAO

IPC: B81B7/02 ,  B05D7/24 ,  B81B3/00 ,  B81C1/00 ,  C09D4/00 ,  C23C14/06

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

Abstract: PROBLEM TO BE SOLVED: To provide a method to coat a surface of an MEMS device with a silane coupling agent for reducing automatic adhesion.
SOLUTION: In this method, (a) the silane coupling agent is mixed with a low volatile matrix material in a raw film material vessel, (b) a micro-electromechanical system device is disposed in a vacuum vapor deposition chamber connected to the raw film material vessel, and (c) the vacuum vapor deposition chamber is evacuated to the predetermined pressure, and the pressure in the vacuum vapor deposition chamber is maintained for a predetermined time in order to perform chemical vapor deposition of the silane coupling agent on a surface of the micro-electromechanical system device.
COPYRIGHT: (C)2004,JPO

公开(公告)号：US20240067520A1

公开(公告)日：2024-02-29

申请号：US18239986

申请日：2023-08-30

Applicant: Infineon Technologies AG

Inventor： Fabian Streb ,  Johann Straßer ,  Hans-Jörg Timme ,  Marc Füldner ,  Arnaud Walther ,  Hutomo Suryo Wasisto

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00952 ,  B81B3/0005 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/112

Abstract: An encapsulated MEMS device and a method for manufacturing the MEMS device are provided. The method comprises providing a cavity structure having an inner volume comprising a plurality of MEMS elements, which are relatively displaceable with respect to each other, and having an opening structure to the inner volume, depositing a Self-Assembled Monolayer (SAM) through the opening structure onto exposed surfaces within the inner volume of the cavity structure, and closing the cavity structure by applying a layer structure on the opening structure for providing a hermetically closed cavity.

公开(公告)号：US11883845B2

公开(公告)日：2024-01-30

申请号：US18093701

申请日：2023-01-05

Applicant: BFLY OPERATIONS, INC.

Inventor： Lingyun Miao ,  Keith G. Fife ,  Jianwei Liu ,  Jonathan M. Rothberg

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00

CPC classification number: B06B1/0292 ,  B81B3/001 ,  B81C1/00984 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81C2201/0109 ,  B81C2201/0125 ,  B81C2201/0176

Abstract: A method of forming an ultrasonic transducer device involves depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.

公开(公告)号：US20230357000A1

公开(公告)日：2023-11-09

申请号：US17811109

申请日：2022-07-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Jung Chen

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2201/0176

Abstract: A membrane is formed through processes including depositing a first piezoelectrical layer, depositing a first electrode layer over the first piezoelectrical layer, patterning the first electrode layer to form a first electrode, depositing a second piezoelectrical layer over the first electrode, depositing a second electrode layer over the second piezoelectrical layer, patterning the second electrode layer to form a second electrode, and depositing a third piezoelectrical layer over the second electrode. The third piezoelectrical layer, the second piezoelectrical layer, and the first piezoelectrical layer are etched to form a through-hole. The through-hole is laterally spaced apart from the first electrode and the second electrode. A first contact plug and a second contact plug are then formed to electrically connect to the first electrode and the second electrode, respectively.