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    INTEGRATED CMOS AND MEMS SENSOR FABRICATION METHOD AND STRUCTURE
    122.
    发明申请
    INTEGRATED CMOS AND MEMS SENSOR FABRICATION METHOD AND STRUCTURE 审中-公开
    集成CMOS和MEMS传感器制造方法和结构

    公开(公告)号：WO2016007435A1

    公开(公告)日：2016-01-14

    申请号：PCT/US2015/039255

    申请日：2015-07-06

    Applicant: INVENSENSE, INC.

    Inventor： SMEYS, Peter

    IPC: B81B7/00

    CPC classification number: B81C1/00238 ,  B81B7/02 ,  B81C1/00246 ,  B81C2201/0197 ,  B81C2203/0792

    Abstract: A method of providing a CMOS -MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate.

    Abstract translation: 公开了一种提供CMOS -MEMS结构的方法。 该方法包括将MEMS致动器基板上的第一顶部金属和CMOS基板上的第二顶部金属图案化。 MEMS致动器基板和CMOS基板中的每一个在其上包括氧化物层。 该方法包括利用第一结合步骤将MEMS致动器基板的第一图案化顶部金属与基底基板的第二图案化顶部金属结合来蚀刻MEMS致动器基板和基底基板上的每个氧化物层。 最后，该方法包括将致动器层蚀刻到MEMS致动器基板中，并利用第二结合步骤将MEMS致动器基板结合到MEMS手柄基板。

    MICROFLUIDIC DEVICES FABRICATED BY DIRECT THICK FILM WRITING AND METHODS THEREOF
    125.
    发明申请
    MICROFLUIDIC DEVICES FABRICATED BY DIRECT THICK FILM WRITING AND METHODS THEREOF 审中-公开
    通过直接厚膜书写的微流体装置及其方法

    公开(公告)号：WO2006076301A3

    公开(公告)日：2007-11-01

    申请号：PCT/US2006000707

    申请日：2006-01-10

    Applicant: OHMCRAFT INC

    Inventor： GRANDE WILLIAM J ,  FINO GARY A

    IPC: B01L99/00 ,  G01N27/447

    CPC classification number: B29C66/1122 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0887 ,  B29C33/3878 ,  B29C33/428 ,  B29C65/48 ,  B29C65/52 ,  B29C66/232 ,  B29C66/5326 ,  B29C66/5346 ,  B29L2031/756 ,  B33Y10/00 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0197

    Abstract: The present invention relates to a process for producing a microfluidic device which involves providing a substrate with a surface and writing a first flowable material on the surface of the substrate. The first flowable material is then solidified to form spacer elements, each with a top surface distal from the surface of the substrate, and a second flowable material is written on the surface of the substrate. A cover having a surface is provided and applied to the substrate, with the surface of the cover contacting the top surfaces of the spacer elements. The second flowable material is solidified to form walls, where the walls, the surface of the substrate, and the surface of the cover form flow channels of a microfluidic device. The resulting microfluidic device is also disclosed.

    Abstract translation: 本发明涉及一种用于生产微流体装置的方法，其涉及提供具有表面的基底并将第一可流动材料写在基底的表面上。 然后将第一可流动材料固化以形成间隔元件，每个隔离元件具有远离基板表面的顶表面，并且第二可流动材料被写在基板的表面上。 提供具有表面的盖并将其施加到基板，其中盖的表面接触间隔元件的顶表面。 第二可流动材料被固化以形成壁，其中壁，基底的表面和盖的表面形成微流体装置的流动通道。 还公开了所得的微流体装置。

    MICROFLUIDIC DEVICES FABRICATED BY DIRECT THICK FILM WRITING AND METHODS THEREOF
    126.
    发明申请
    MICROFLUIDIC DEVICES FABRICATED BY DIRECT THICK FILM WRITING AND METHODS THEREOF 审中-公开
    通过直接厚膜书写的微流体装置及其方法

    公开(公告)号：WO2006076301A2

    公开(公告)日：2006-07-20

    申请号：PCT/US2006/000707

    申请日：2006-01-10

    Applicant: OHMCRAFT, INC.

    Inventor： GRANDE, William, J. ,  FINO, Gary, A.

    IPC: B01L11/00

    CPC classification number: B29C66/1122 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0887 ,  B29C33/3878 ,  B29C33/428 ,  B29C65/48 ,  B29C65/52 ,  B29C66/232 ,  B29C66/5326 ,  B29C66/5346 ,  B29L2031/756 ,  B33Y10/00 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0197

    Abstract: The present invention relates to a process for producing a microfluidic device which involves providing a substrate with a surface and writing a first flowable material on the surface of the substrate. The first flowable material is then solidified to form spacer elements, each with a top surface distal from the surface of the substrate, and a second flowable material is written on the surface of the substrate. A cover having a surface is provided and applied to the substrate, with the surface of the cover contacting the top surfaces of the spacer elements. The second flowable material is solidified to form walls, where the walls, the surface of the substrate, and the surface of the cover form flow channels of a microfluidic device. The resulting microfluidic device is also disclosed.

    Abstract translation: 本发明涉及一种用于生产微流体装置的方法，其涉及提供具有表面的基底并将第一可流动材料写在基底的表面上。 然后将第一可流动材料固化以形成间隔元件，每个间隔元件具有远离衬底表面的顶表面，并且第二可流动材料被写在衬底的表面上。 提供具有表面的盖并将其施加到基板，其中盖的表面接触间隔元件的顶表面。 第二可流动材料被固化以形成壁，其中壁，基底的表面和盖的表面形成微流体装置的流动通道。 还公开了所得的微流体装置。

    PROCESS FOR FORMING MICROSTRUCTURES
    127.
    发明申请
    PROCESS FOR FORMING MICROSTRUCTURES 审中-公开
    形成微结构的方法

    公开(公告)号：WO2006068737A1

    公开(公告)日：2006-06-29

    申请号：PCT/US2005/041661

    申请日：2005-11-18

    Applicant: TOUCHDOWN TECHNOLOGIES, INC.

    Inventor： TANG, Weilong ,  HSU, Tseng-Yeng ,  ISMAIL, Salleh ,  TEA, Nim, Hak ,  KHOO, Melvin, B. ,  GARABEDIAN, Raffi ,  NAMBURI, Lakshmikanth

    IPC: G03F7/00

    CPC classification number: B81C1/00436 ,  B81C1/00666 ,  B81C2201/0107 ,  B81C2201/0197

    Abstract: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

    Abstract translation: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射，以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂，并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分，然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案，以使光致抗蚀剂溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域，但不包含整个基板。 相反，它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

    ELECTROCHEMICAL FABRICATION METHODS FOR PRODUCING MULTILAYER STRUCTURES INCLUDING THE USE OF DIAMOND MACHINING IN THE PLANARIZATION OF DEPOSITS OF MATERIAL
    129.
    发明申请
    ELECTROCHEMICAL FABRICATION METHODS FOR PRODUCING MULTILAYER STRUCTURES INCLUDING THE USE OF DIAMOND MACHINING IN THE PLANARIZATION OF DEPOSITS OF MATERIAL 审中-公开
    用于生产多层结构的电化学制造方法，包括在材料沉积的平面化中使用金刚石加工

    公开(公告)号：WO2005065430A3

    公开(公告)日：2005-11-03

    申请号：PCT/US2005000165

    申请日：2005-01-03

    Applicant: MICROFABRICA INC ,  COHEN ADAM L ,  FRODIS URI ,  LOCKARD MICHAEL S ,  KUMAR ANANDA H ,  ZHANG GANG ,  SMALLEY DENNIS R

    Inventor： COHEN ADAM L ,  FRODIS URI ,  LOCKARD MICHAEL S ,  KUMAR ANANDA H ,  ZHANG GANG ,  SMALLEY DENNIS R

    IPC: B05D1/38 ,  C08K3/00 ,  C25D3/30 ,  C25D3/38 ,  C25D3/48 ,  C25D5/02 ,  C25D5/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/301 ,  H01L21/302 ,  H01L21/4763 ,  H01L21/768

    CPC classification number: C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    Abstract: Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni-P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn-Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete the process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine materials as opposed to wide solid regions of structural material.

    Abstract translation: 公开了用于形成单层和多层中尺度和微尺度结构的电化学制造方法，其包括使用金刚石机械加工（例如飞切或车削）来平面化层。 一些实施例集中于可用于电化学制造的牺牲和结构材料系统，并且该系统可以以最小的工具磨损进行金刚石加工（例如，Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn， 以及Au和Sn-Pb），其中第一种或多种材料是结构材料，第二种是牺牲材料）。 一些实施例集中于减少使用金刚石加工来平坦化使用难加工材料电化学制造的结构时的工具磨损的方法（例如，通过选择性沉积困难的机械材料并且可能几乎没有过量的电镀厚度，和/或预加工沉积 在期望的表面水平的小增量内（例如使用研磨或粗切割操作），然后使用金刚石飞切来完成该过程，和/或从难加工材料的薄壁区域形成结构或部分结构 而不是结构材料的广阔固体区域。

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