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    METHODS FOR STICTION REDUCTION IN MEMS SENSORS
    121.
    发明公开
    METHODS FOR STICTION REDUCTION IN MEMS SENSORS 有权
    MEMS传感器中减少粘附的方法

    公开(公告)号：EP3003966A1

    公开(公告)日：2016-04-13

    申请号：EP14808422.1

    申请日：2014-05-23

    Applicant: InvenSense, Inc.

    Inventor： ZHANG, Cerina ,  TEA, Nim

    IPC: B81B7/02

    CPC classification number: B81C1/00984 ,  B81B3/0008 ,  B81B2207/015 ,  B81C1/00976 ,  B81C2201/115 ,  H01L21/76838 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of the invention includes reducing stiction of a MEMS device by providing a conductive path for electric charge collected on a bump stop formed on a substrate. The bump stop is formed by depositing and patterning a dielectric material on the substrate, and the conductive path is provided by a conductive layer deposited on the bump stop. The conductive layer can also be roughened to reduce stiction.

    Abstract translation: 本发明的方法包括通过提供用于收集在形成在衬底上的凸块上的电荷的导电路径来减少MEMS器件的静摩擦。 通过在基板上沉积并图案化电介质材料来形成凸块，并且通过沉积在凸块上的导电层来提供导电路径。 导电层也可以粗糙化以减少静摩擦。

    Reducing MEMS stiction by deposition of nanoclusters
    122.
    发明公开
    Reducing MEMS stiction by deposition of nanoclusters 有权
    Reduzierung der Haftung在MEMS durch ablagerung von Nanoclustern

    公开(公告)号：EP2746218A1

    公开(公告)日：2014-06-25

    申请号：EP13196317.5

    申请日：2013-12-09

    Applicant: Freescale Semiconductor, Inc.

    Inventor： Steimle, Robert F. ,  Montez, Ruben B.

    IPC: B81B3/00

    CPC classification number: B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

    Abstract: A method for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters (520). When a next portion of the MEMS device is formed on the sacrificial layer (810), this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface (910) decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

    Abstract translation: 提供了一种通过减少可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的方法。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米簇（520）形成。 当MEMS器件的下一部分形成在牺牲层（810）上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙表面（910）减小了可用于在MEMS装置中接触的表面积，并且进而降低了可赋予粘性的面积。

    PROCESS FOR FORMING AND CONTROLLING ROUGH INTERFACES
    124.
    发明公开
    PROCESS FOR FORMING AND CONTROLLING ROUGH INTERFACES 审中-公开
    法成型及控制粗糙表面

    公开(公告)号：EP2109582A1

    公开(公告)日：2009-10-21

    申请号：EP08702243.0

    申请日：2008-01-10

    Applicant: S.O.I.TEC Silicon on Insulator Technologies S.A.

    Inventor： ASPAR, Bernard ,  LAGAHE BLANCHARD, Chrystelle ,  SOUSBIE, Nicolas

    IPC: B81C1/00

    CPC classification number: B81B3/001 ,  B81C1/00952 ,  B81C2201/115

    Abstract: The invention relates to a process for forming a semiconductor component with a buried rough interface comprising: a) the formation of a rough interface (22) of predetermined roughness R2 in a first semiconductor substrate (16), with: * the selection of a semiconductor substrate (16), presenting a surface (14) with roughness R1>R2, * a thermal oxidation step for this substrate until an oxide -semiconductor interface (22) of roughness R2 is obtained, b) preparation of the oxidized surface of this first semiconductor substrate in view of assembly with a second substrate, c) the assembly of the surface of the oxide and of the second substrate.

    Surface preparation for selective silicon fusion bonding
    125.
    发明公开
    Surface preparation for selective silicon fusion bonding 审中-公开
    用于选择性硅熔融接合表面制备

    公开(公告)号：EP1772426A3

    公开(公告)日：2008-04-16

    申请号：EP06121955.6

    申请日：2006-10-09

    Applicant: Honeywell International Inc.

    Inventor： Milne, James C. ,  McNally, Leonard J.

    IPC: B81C3/00 ,  B81C1/00

    CPC classification number: B81B3/001 ,  B81C2201/115 ,  B81C2203/036

    Abstract: An apparatus and method for a silicon-based Micro-Electro Mechanical System (MEMS) device, including a pair of silicon cover structures each having a substantially smooth and planar contact surface formed thereon; a silicon mechanism structure having a part thereof that is movably suspended relative to a relatively stationary frame portion thereof, the frame portion being formed with substantially parallel and spaced-apart smooth and planar contact surfaces; a relatively rough surface disposed between the contact surfaces of the covers and corresponding surfaces of the movable part of the mechanism structure; and wherein the contact surfaces of the cover structures form silicon fusion bond joints with the respective contact surfaces of the mechanism frame.

    METHOD AND APPARATUS FOR USING AN ARRAY OF GRATING LIGHT VALVES TO PRODUCE MULTICOLOR OPTICAL IMAGES
    126.
    发明授权
    METHOD AND APPARATUS FOR USING AN ARRAY OF GRATING LIGHT VALVES TO PRODUCE MULTICOLOR OPTICAL IMAGES 失效
    方法和设备发生光学彩色图像期用格子光阀组

    公开(公告)号：EP0875010B1

    公开(公告)日：2002-05-02

    申请号：EP97904813.9

    申请日：1997-01-17

    Applicant: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

    Inventor： BLOOM, David, M. ,  HUIBERS, Andrew

    IPC: G02B5/18

    CPC classification number: B81B3/001 ,  B81C2201/115 ,  G02B5/1828 ,  G02B26/0808

    Abstract: A multicolor optical image-generating device comprised of an array of grating light valves (GLVs) organized to form light-modulating pixel units for spatially modulating incident rays of light. The pixel units are comprised of three subpixel components each including a plurality of elongated, equally spaced apart reflective grating elements arranged parallel to each other with their light-reflective surfaces also parallel to each other. Each subpixel component includes means for supporting the grating elements in relation to one another, and means for moving alternate elements relative to the other elements and between a first configuration wherein the component acts to reflect incident rays of light as a plane mirror, and a second configuration wherein the component diffracts the incident rays of light as they are reflected from the grating elements. The three subpixel components of each pixel unit are designed such that when red, green and blue light sources are trained on the array, colored light diffracted by particular subpixel components operating in the second configuration will be directed through a viewing aperture, and light simply reflected from particular subpixel components operating in the first configuration will not be directed through the viewing aperture.

    Stiction reduction system and method thereof
    128.
    发明授权
    Stiction reduction system and method thereof 有权

    公开(公告)号：US11661332B2

    公开(公告)日：2023-05-30

    申请号：US16795514

    申请日：2020-02-19

    Applicant: InvenSense, Inc.

    Inventor： Daesung Lee ,  Ian Flader ,  Alan Cuthbertson ,  Emad Mehdizadeh

    IPC: H01L21/311 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/001 ,  B81C1/0092 ,  B81C1/0096 ,  B81C1/00341 ,  B81C1/00444 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/013 ,  B81C2201/115

    Abstract: Methods and systems for reducing stiction through roughening the surface and reducing the contact area in MEMS devices are disclosed. A method includes fabricating bumpstops on a surface of a MEMS device substrate to reduce stiction. Another method is directed to applying roughening etchant to a surface of a silicon substrate to enhance roughness after cavity etch and before removal of hardmask. Another embodiment described herein is directed to a method to reduce contact area between proof mass and UCAV (“upper cavity”) substrate surface with minimal impact on the cavity volume by introducing a shallow etch process step and maintaining high pressure in accelerometer cavity. Another method is described as to increasing the surface roughness of a UCAV substrate surface by depositing a rough layer (e.g. polysilicon) on the surface of the substrate and etching back the rough layer to transfer the roughness.

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