Abstract:
The invention relates to a method for assembling two or more mirror plate stacks into a rigid unit in turn comprising a plurality of mirror plates and a base plate onto which the plurality of mirror plates are stacked. To improve assembly accuracy of the mirror plates, a base plate is provided with a first mirror plate mounted thereto, a handling tool is provided with a second mirror plate and a spacer is provided to a first surface of the second mirror plate and positioned to align the second mirror plate with the first mirror plate. This alignment is based on a measured position and shape of the first mirror plate to compensate for a deviation from a pre-defined position and shape. The plates are then attached to each other with the spacer; the handling tool is removed and the position and shape of the second mirror plate is measured.
Abstract:
A collector optical system for EUV and X-ray applications is disclosed, wherein the system includes a plurality of mirrors arranged in a nested configuration that is symmetric about an optical axis. The mirrors have first and second reflective surfaces that provide successive grazing incidence reflections of radiation from a radiation source. The first and second reflective surfaces have a corrective shape that compensates for high spatial frequency variations in the far field intensity distribution of the radiation.
Abstract:
An EUV light source is configured for generating an EUV light for an exposure device. The EUV light source includes a chamber, a target supply device configured for supplying a target into the chamber, an optical system for introducing laser light from a driver laser into the chamber and irradiating the target with the laser light to turn the target into plasma from which EUV light is emitted, and an EUV collector mirror in the chamber. The EUV collector mirror may include a multilayered reflecting surface with grooves and collect the EUV light from the plasma to a focal spot. The grooves can be arranged in a concentric fashion, and be configured for diffracting at least light at a wavelength which is the same as that of the laser light from the driver laser.
Abstract:
Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.
Abstract:
A device for UV curing a coating or printed ink on an workpiece such as an optical fiber comprises dual elliptical reflectors arranged to have a co-located focus. The workpiece is centered at the co-located focus such that the dual elliptical reflectors are disposed on opposing sides of the workpiece. Two separate light sources are positioned at a second focus of each elliptical reflector, wherein light irradiated from the light sources is substantially concentrated onto the surface of the workpiece at the co-located focus.
Abstract:
A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a centrally positioned longitudinal strip and first and second side reflectors to form a parabolic-type surface. The longitudinal strip and first and second side reflectors have curved reflective surfaces with dichroic coatings and the longitudinal strip comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.
Abstract:
The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
Abstract:
An EUV light source is configured for generating an EUV light for an exposure device. The EUV light source includes a chamber, a target supply device configured for supplying a target into the chamber, an optical system for introducing laser light from a driver laser into the chamber and irradiating the target with the laser light to turn the target into plasma from which EUV light is emitted, and an EUV collector mirror in the chamber. The EUV collector mirror may include a multilayered reflecting surface with grooves and collect the EUV light from the plasma to a focal spot. The grooves can be arranged in a concentric fashion, and be configured for diffracting at least light at a wavelength which is the same as that of the laser light from the driver laser.
Abstract:
To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process. After the exposure of the workpiece in its working face to an electron beam to conduct modification so that the machining speed of the surface layer part in the working face is substantially even, ultraprecision smoothening is carried out by working process.
Abstract:
The invention relates to a method for assembling a mirror plate stack 30 comprising a plurality of mirror plates 10 and a base plate 13 onto which the plurality of mirror plates are stacked. Additionally, the invention relates to a method for assembling two or more mirror plate stacks into a rigid unit. In order to improve the assembly accuracy of the mirror plates, it is proposed that the method comprises the steps of providing a base plate 13 with a first mirror plate mounted thereto; providing a handling tool with a second mirror plate; providing a spacer to a first surface of the second mirror plate; positioning the handling tool comprising the second mirror plate with the spacer to align the second mirror plate with the first mirror plate, wherein the second mirror plate is aligned relative to the first mirror plate based on a measured position and shape of the first mirror plate to compensate a deviation of the measured position and shape of the first mirror plate from a pre-defined position and shape of the first mirror plate; attaching the second mirror plate to the first mirror plate by bonding the spacer to the first mirror plate, wherein the spacer determines a pre-defined distance between the first and the second mirror plates; exposing a second surface of the second mirror plate by removing the handling tool from the attached second mirror plate; and measuring the position and shape of the attached second mirror plate after the second surface has been exposed.