GASEOUS REACTIVE IMPROVEMENT TREATMENT SYSTEM OF PARTICULATE RARE EARTH OXYSULFIDE PHOSPHORS
    131.
    发明申请
    GASEOUS REACTIVE IMPROVEMENT TREATMENT SYSTEM OF PARTICULATE RARE EARTH OXYSULFIDE PHOSPHORS 审中-公开
    颗粒状稀土氧化物磷酸盐气体反应性改进处理体系

    公开(公告)号:WO1985004179A1

    公开(公告)日:1985-09-26

    申请号:PCT/US1985000306

    申请日:1985-02-25

    CPC classification number: C09K11/7789 C09K11/7701 C09K11/7771

    Abstract: The efficiency and brightness of particulate, crystalline phosphors of oxysulfides on lanthanum series metals activated with trivalent metals having atomic numbers from 50 to 70, such as GD2O2O:Tb crystalline phosphors, containing 0.6 mol percent Tb and particularly those also containing 0.1 to 5 mol percent Dy are increased up to 2 to 3 times by treating the phosphors in a H2/SO2 atmosphere at a temperature from 750 C to 1,250 C for 15 minutes to 3 hours. Life tests have shown no decrease in brightness after 1,000 hours of tube operation.

    Abstract translation: 氧化硫化物颗粒状结晶磷光体对原子序数为50〜70的三价金属活化的镧系金属的颗粒状结晶性荧光体,例如含有0.6mol%Tb的GD2O2O:Tb结晶性荧光体,特别是含有0.1〜5mol% 通过在750℃至1250℃的温度下,在H2 / SO2气氛中处理荧光体15分钟至3小时,将Dy增加至2至3倍。 寿命测试显示管操作1000小时后的亮度没有降低。

    ELECTRONICALLY SCANNED ARRAY ANTENNA
    132.
    发明申请
    ELECTRONICALLY SCANNED ARRAY ANTENNA 审中-公开
    电子扫描阵列天线

    公开(公告)号:WO1985002721A1

    公开(公告)日:1985-06-20

    申请号:PCT/US1984001067

    申请日:1984-07-06

    CPC classification number: H01Q3/443

    Abstract: An electronically scanned array antenna (18) useful for millimeter wavelength energy. The antenna comprises a fully ferrite (21) loaded square or round waveguide (20) having radiating apertures (22) spaced along part of its length. Rf energy is circularly polarized (26) in the waveguide. The phase velocity of the wave is controlled by applying a longitudinal magnetic field to the ferrite to produce a controllable linear progressive phase of the energy radiated from the apertures (22) to form a beam in the desired direction. The phase control (28) is of a latching type using flux drive. The particular structure of the invention enables combining a plurality of branching array elements (66) with a feed element (68) to form an array capable of two dimension beam scanning.

    MULTI-GATE FIELD EFFECT TRANSISTOR
    133.
    发明申请
    MULTI-GATE FIELD EFFECT TRANSISTOR 审中-公开
    多栅场效应晶体管

    公开(公告)号:WO1985002061A1

    公开(公告)日:1985-05-09

    申请号:PCT/US1984000026

    申请日:1984-01-09

    CPC classification number: H01L29/8124 H01L29/7831

    Abstract: A multi-gate field effect transistor (102) having source (111) and drain (109) regions and a plurality of active channels (104a, b) extending therein between. A plurality of gates (116, 120), each having a corresponding like plurality of gate contacts (114a, b, 118a, b) commonly overlying the active channels (104a, b), are provided to control the flow of charge carriers between the source (111) and drain (109) regions. The gate contacts (114a, b, 118a, b) are uniquely ordered and correspondingly positioned with regard to each of the active channels (104a, b) so that each of the gates has a substantially symmetric electrical characteristics in controlling the flow of charge carriers.

    Abstract translation: 具有源极(111)和漏极(109)区域的多栅极场效应晶体管(102)和在其间延伸的多个有源沟道(104a,b)。 提供多个门(116,120),每个具有通常覆盖有源通道(104a,b)的相应的多个栅极触点(114a,b,118a,b))以控制电荷载流子 源(111)和漏(109)区。 栅极触点(114a,b,118a,b)是唯一排列的并且相对于每个有源沟道(104a,b)定位,使得每个栅极具有基本上对称的电特性,用于控制电荷载流子 。

    LOW INPUT VOLTAGE PRECISION DC-TO-DC VOLTAGE CONVERTER CIRCUIT
    134.
    发明申请
    LOW INPUT VOLTAGE PRECISION DC-TO-DC VOLTAGE CONVERTER CIRCUIT 审中-公开
    低输入电压精度直流到直流电压转换器电路

    公开(公告)号:WO1985001621A1

    公开(公告)日:1985-04-11

    申请号:PCT/US1984001549

    申请日:1984-09-25

    CPC classification number: H02M3/156 Y10S323/901

    Abstract: A DC-to-DC up-converter (41) of the type wherein voltage is built up across a capacitor (17) by alternately connecting a coil (19) by means of a pulse width modulator-controlled switching transistor (23) across a low DC voltage source (13') and, in series with that source, across the capacitors (17). Operation is initiated by converting the switching circuit into a blocking oscillator, running the oscillator from the low DC voltage source, and using the up-converted voltage to power the rest of the up-converter, making it possible to run the entire up-converter circuit from a very low voltage source.

    HIGH DENSITY MOSFET WITH FIELD OXIDE ALIGNED CHANNEL STOPS AND METHOD OF FABRICATING THE SAME
    135.
    发明申请
    HIGH DENSITY MOSFET WITH FIELD OXIDE ALIGNED CHANNEL STOPS AND METHOD OF FABRICATING THE SAME 审中-公开
    具有氧化物对准的通道槽的高密度MOSFET及其制造方法

    公开(公告)号:WO1985001613A1

    公开(公告)日:1985-04-11

    申请号:PCT/US1983001959

    申请日:1983-12-12

    CPC classification number: H01L21/762 H01L21/266 H01L21/823481 H01L21/8236

    Abstract: A high-density MOSFET (10) having field oxide (24) self-aligned channel stops (26, 27) for device isolation and an optimal method of fabricating such a device. The process provides channel stops (26, 27) underlying and aligned with the edges of a field oxide layer (24) and allows the dopant concentration of the channel stops (26, 27) to be established separately from that of the active device channel region (16) by use of an independent channel stop implant. The active devices (10) thus formed require minimal isolation area, have a high field threshold voltage, a low junction capacitance, and minimal body effect. They are particularly useful in high-speed, high-performance integrated circuits.

    Abstract translation: 具有用于器件隔离的场氧化物(24)自对准通道停止器(26,27)的高密度MOSFET(10)以及制造这种器件的最佳方法。 该过程提供在场氧化物层(24)的边缘下方并与其对准的通道停止(26,27),并且允许与有源器件沟道区域(26,27)的掺杂剂浓度分开设置, (16)通过使用独立的通道停止植入物。 由此形成的有源器件(10)需要最小的隔离面积,具有高场阈值电压,低结电容和最小的身体效应。 它们在高速,高性能集成电路中特别有用。

    LATCH-UP IMMUNE, MULTIPLE RETROGRADE WELL HIGH DENSITY CMOS FET
    136.
    发明申请
    LATCH-UP IMMUNE, MULTIPLE RETROGRADE WELL HIGH DENSITY CMOS FET 审中-公开
    LATCH-UP IMMUNE,MULTIPLE RETROGRADE WELL HIGH DENSITY CMOS FET

    公开(公告)号:WO1985001391A1

    公开(公告)日:1985-03-28

    申请号:PCT/US1983001958

    申请日:1983-12-12

    Abstract: A high density CMOS device structure (6) that is essentially immune to latch-up, and a method of fabricating the structure (6). This is obtained by providing a well region (14) within and adjacent a surface of a substrate (12), the well region (14) having a multiple retrograde doping density profile, and by providing source and drain regions (18, 20) within the well (14) and adjacent the surface of the substrate (12), the source and drain regions (18, 20) having associated therewith a greater than average density of residual defects within said well region (14), the greater density of residual defects being generally associated with the deepest portions of the source and drain regions (18, 20) and the immediately underlying portions of said well region (14), respectively.

    PROCESS FOR FORMING A GRADED INDEX OPTICAL MATERIAL AND STRUCTURES FORMED THEREBY
    137.
    发明申请
    PROCESS FOR FORMING A GRADED INDEX OPTICAL MATERIAL AND STRUCTURES FORMED THEREBY 审中-公开
    形成等级指数光学材料的方法和形成的结构

    公开(公告)号:WO1985001115A1

    公开(公告)日:1985-03-14

    申请号:PCT/US1984001257

    申请日:1984-08-09

    Abstract: A process for depositing on the surface of a substrate a layer of a chosen material having continuous gradations in refractive index in a predetermined periodic pattern. The substrate is exposed to two vapor phase reactants which react upon radiation-inducement to produce the chosen material, and the relative proportion of the reactants is varied in a predetermined and continuous sequence to produce continuous gradations in the stoichiometric composition and refractive index of the deposited layer as a function of thickness. Additionally, predetermined changes in refractive index and/or thickness across the horizontal surface of the substrate may be produced in combination with the change in refractive index as a function of thickness. Diffraction optical elements formed by such a process include various optical filters and reflective optical coatings.

    SHUTTER FOR RADIATION SOURCE OF EXTENDED AREA
    138.
    发明申请
    SHUTTER FOR RADIATION SOURCE OF EXTENDED AREA 审中-公开
    扩展区辐射源切换器

    公开(公告)号:WO1985000434A1

    公开(公告)日:1985-01-31

    申请号:PCT/US1984000764

    申请日:1984-05-18

    CPC classification number: G02B26/02 F21V11/14 G02B5/005

    Abstract: Shutter (30) produces a pulsed emission from a beacon. Hot plate (40) radiates upward through openings (67). Shutter plate (52) slides to open and close the view of the hot plate. Outer optical plate (38) has divergent and adjoining reflector openings (67) so that a large area source is seen when the shutter is open.

    Abstract translation: 快门(30)从信标产生脉冲发射。 热板(40)通过开口(67)向上辐射。 快门板(52)滑动以打开和关闭热板的视图。 外部光学板(38)具有发散和相邻的反射器开口(67),使得当快门打开时可以看到大面积的源。

    SEEKER GYROSCOPE HAVING REDUCED CROSS-COUPLING BETWEEN ROTOR SPIN AND PRECESSION
    139.
    发明申请
    SEEKER GYROSCOPE HAVING REDUCED CROSS-COUPLING BETWEEN ROTOR SPIN AND PRECESSION 审中-公开
    SEEKER GYROSCOPE具有减小的转子与转子之间的交叉耦合

    公开(公告)号:WO1985000055A1

    公开(公告)日:1985-01-03

    申请号:PCT/US1983000945

    申请日:1983-06-16

    CPC classification number: G01C19/08 G01C19/04 G01C19/30

    Abstract: A two-axis gyroscope in which precession may be effected by application of a DC current to the stationary precession windings (16). The rotor assembly (22) has a pair of ring-shaped permanent magnets (18, 20) with their magnetic vectors aligned parallel with the gyro spin axis. This structure presents a magnetic field to the precession windings (16) which does not change as the rotor assembly rotates. Thus the gyroscope may be precessed by application of a DC current to the precession windings. The precession windings are located along two orthogonal axes to allow precession of the gyro in two orthogonal directions.

    Abstract translation: 一种双轴陀螺仪,其中通过将DC电流施加到固定进动绕组(16)可以进行进动。 转子组件(22)具有一对环形永磁体(18,20),其磁矢量与陀螺旋转轴线平行排列。 这种结构向进动绕组(16)呈现磁场,转子绕组(16)不随转子组件旋转而改变。 因此,可以通过将DC电流施加到进动绕组来进行陀螺仪。 进动绕组沿两个正交轴线定位,以允许陀螺仪在两个正交方向上进动。

    DUAL BAND PHASED ARRAY USING WIDEBAND ELEMENTS WITH DIPLEXER
    140.
    发明申请
    DUAL BAND PHASED ARRAY USING WIDEBAND ELEMENTS WITH DIPLEXER 审中-公开
    使用带DIP DIPER的宽带元件的双带定时阵列

    公开(公告)号:WO1984004855A1

    公开(公告)日:1984-12-06

    申请号:PCT/US1984000763

    申请日:1984-05-18

    CPC classification number: H01Q3/30 H01P5/103 H01Q5/00 H01Q13/06 H01Q21/30

    Abstract: A dual band, phased array antenna especially adaptable for tactical radar capable of performing search, track and identification in a hostile jamming environment. The dual band array antenna is essentially two antennas sharing a common antenna aperture. The two antennas possess separate feed system and beam steering control. Thus, the beams for each frequency band can be steered independently and simultaneously. This design utilizes an ultra-wide band radiating element which can operate over approximately an octave bandwidth encompassing two adjacent microwave bands. In particular, the dual band signals can be received efficiently by the radiating element. A dual band coaxial-to-waveguide transition can be used to carry the signals to a diplexer. The dual band signals are separated at the diplexer and can be processed in separate feed networks. The advantages of this dual band phased array technique include not only good impedance characteristics but also the absence of grating lobe formation and cross coupling problems.

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