公开(公告)号：AT441938T

公开(公告)日：2009-09-15

申请号：AT06830385

申请日：2006-12-05

Applicant: IBM

Inventor： MANDELMAN JACK ,  CHENG KANGGUO ,  HSU LOUIS ,  YANG HAINING

IPC: H01L21/336 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/45 ,  H01L29/78

Abstract: In a first aspect, a first method of manufacturing a finFET is provided. The first method includes the steps of (1) providing a substrate; and (2) forming at least one source/drain diffusion region of the finFET on the substrate. Each source/drain diffusion region includes (a) an interior region of unsilicided silicon; and (b) silicide formed on a top surface and sidewalls of the region of unsilicided silicon. Numerous other aspects are provided.